Abstract:
A light emitting diode (LED) substrate includes a substrate body, a positive circuit and a negative circuit. The substrate body includes a light source disposing face having a main disposing surface and at least one sub-disposing surface, in which the at least one sub-disposing surface is disposed around the main disposing surface and has an inclined angle with the main disposing surface. The positive circuit and the negative circuit are buried inside the substrate body and connected to the main disposing surface and the sub-disposing surface.
Abstract:
A light emitting diode package structure includes a substrate, a light emitting diode chip, a light mixing encapsulating layer, and an ultraviolet protecting layer. The light emitting diode chip is disposed on a surface of the substrate and the light mixing encapsulating layer covers the light emitting diode chip. The ultraviolet protecting layer is adhered to a surface of the light mixing encapsulating layer such that when the ultraviolet protecting layer receives ultraviolet, the color change occurs to reflect or absorb the ultraviolet.
Abstract:
A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an active layer, an N-type semiconductor layer, a first electrode, and K second electrodes. The active layer is located on the P-type semiconductor layer. The N-type semiconductor layer is located on the active layer. The N-type semiconductor layer has a first top surface that is distant from the active layer. The first electrode is electrically connected to the P-type semiconductor layer. The light blocking structure is located in the light emitting diode chip and defines K sub-pixel regions. The active layer and the N-type semiconductor layer are divided into K sub-portions respectively corresponding to the K sub-pixel regions by the light blocking structure. The K sub-pixel regions share the P-type semiconductor layer.
Abstract:
A LED package structure includes a base portion, a light-emitting chip, a cup portion and an encapsulating glue. The base portion has an upper surface and a lower surface. The upper surface has a die-bonding area. The light-emitting chip emits a light with a first wavelength and is located on the die-bonding area. The cup portion is located on the base portion to surround the die-bonding area to form a recess having an opening. The encapsulating glue is filled into the recess. The encapsulating glue has a wavelength conversion material configured to convert part of the light with the first wavelength into a light with a second wavelength. The cup portion includes an electro chromic layer electrically connected to a first external power and a transmittance of the electro chromic layer is changed in accordance with an input voltage of the first external power to adjust the light-emitting profile of the light-emitting chip.
Abstract:
A method for producing a light-emitting diode is provided, including the following steps. First, a carrier is provided, wherein the carrier comprises a die bonding surface. Then, a die bonding adhesive layer is formed on the die bonding surface, wherein the die bonding adhesive layer has a photoresist property. Next, at least one lighting chip is disposed on the die bonding adhesive layer, and an uncovered portion of the die bonding adhesive layer is not covered by the lighting chip. Finally, the uncovered portion of the die bonding adhesive layer is removed.
Abstract:
The disclosure provides a heat sink for electrical elements and a light-emitting device containing thereof. The heat sink includes a radiating substrate and at least one hollow radiating channel. In which, the hollow radiating channel is horizontally embedded in the radiating substrate, and has two openings disposed on the same site or the opposite sites of the radiating substrate, so that gas may flow in the hollow radiating channel and remove heat of the radiating substrate. And a light-emitting device containing the heat sink is also provided.