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18 条记录 (耗时 0.017 秒)

    DEVICE FOR FORMING A LAYER
    1.
    发明申请
    DEVICE FOR FORMING A LAYER 有权
    用于形成层的装置

    公开(公告)号：US20150232989A1

    公开(公告)日：2015-08-20

    申请号：US14429669

    申请日：2013-12-02

    申请人： LG CHEM, LTD.

    发明人： Seong Hwan Lee ,  Dong Ryul Kim ,  Jang Yeon Hwang

    IPC分类号： C23C16/455

    CPC分类号： C23C16/45544 ,  C23C16/45548 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/545

    摘要： Provided are a device for forming a layer and an atomic layer deposition (ALD) method or a method for forming a layer. The present application provides a device for forming a layer which may effectively form a desired layer by a continuous ALD, and an ALD method or a method for forming a layer by using the device for forming a layer.

    摘要翻译： 提供了用于形成层和原子层沉积（ALD）方法或形成层的方法的装置。 本申请提供了一种用于形成可以通过连续ALD有效地形成期望层的层的装置，以及通过使用该层形成装置形成层的ALD方法或方法。

    Barrier film
    7.
    发明授权
    Barrier film 有权

    公开(公告)号：US12091519B2

    公开(公告)日：2024-09-17

    申请号：US17286562

    申请日：2019-10-22

    申请人： LG CHEM, LTD.

    发明人： Sung Jin Shin ,  Jang Yeon Hwang ,  Hee Joon Jeong ,  Bo Ra Park ,  Hee Wang Yang

    IPC分类号： C23C18/12 ,  C08J7/04 ,  C23C18/14 ,  H10K50/844

    CPC分类号： C08J7/0423 ,  C23C18/122 ,  C23C18/1233 ,  C23C18/1295 ,  C23C18/143 ,  C08J2367/02 ,  C08J2433/16 ,  H10K50/844

    摘要： Provided is a barrier film, comprising a base layer and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, and the second region has a thickness of 10% or more relative to the total thickness of the inorganic layer. The barrier film has excellent barrier properties and optical properties and can be used for electronic products which are sensitive to moisture and the like.

    Barrier film
    8.
    发明授权
    Barrier film 有权

    公开(公告)号：US12006575B2

    公开(公告)日：2024-06-11

    申请号：US17286880

    申请日：2019-10-22

    申请人： LG CHEM, LTD.

    发明人： Sung Jin Shin ,  Jang Yeon Hwang ,  Hee Joon Jeong ,  Bo Ra Park ,  Hee Wang Yang

    IPC分类号： C23C18/12 ,  C08J7/048 ,  C08J7/06 ,  C23C16/34 ,  C23C18/14 ,  C23C18/04 ,  H10K50/844

    CPC分类号： C23C18/122 ,  C08J7/048 ,  C08J7/06 ,  C23C16/34 ,  C23C18/1233 ,  C23C18/14 ,  C23C18/04 ,  H10K50/844

    摘要： Provided is a barrier film comprising a base layer, and an inorganic layer including Si, N, and O, and including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, wherein the film has a water vapor transmission rate of 5.0×10−4 g/m2·day or less as measured under conditions of a temperature of 38° C. and 100% relative humidity after being stored at 85° C. and 85% relative humidity conditions for 250 hours, or wherein the inorganic layer has a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta2O5 at a rate of 0.09 nm/s. The barrier film has excellent barrier properties and optical properties and can be used for electronic products that are sensitive to moisture and the like.

    Roll
    9.
    发明授权
    Roll 有权

    公开(公告)号：US10364499B2

    公开(公告)日：2019-07-30

    申请号：US14646646

    申请日：2013-12-02

    申请人： LG CHEM, LTD.

    发明人： Seong Hwan Lee ,  Dong Ryul Kim ,  Jang Yeon Hwang

    IPC分类号： C23C16/458 ,  C23C16/455 ,  C23C16/54 ,  H01L21/67 ,  H01L21/677 ,  B65H27/00 ,  B65H23/025

    摘要： Provided are a roll, a film forming apparatus, and a film forming method. The present invention provides a roll used in an apparatus which may transfer a substrate, e.g., a flexible substrate such as a plastic film and a fibrous or metallic web or film and may form a film on a surface of the substrate, a film forming apparatus including the roll, and a film forming method using the film forming apparatus.