公开(公告)号：US09315920B2

公开(公告)日：2016-04-19

申请号：US14319976

申请日：2014-06-30

Applicant: LG ELECTRONICS INC.

Inventor： Hyunggu Kim ,  Hwankuk Yuh ,  Hyosang Yu

IPC: H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  C30B29/40 ,  C30B25/18 ,  C30B25/04 ,  H01L21/02 ,  H01L33/16 ,  H01L33/20 ,  H01L33/12

CPC classification number: C30B29/403 ,  C30B25/04 ,  C30B25/183 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20 ,  Y10T428/24355

Abstract: A growth substrate including a substrate having a growth surface including a plurality of steps inclining in a first direction; a first layer disposed on the growth surface, the first layer including an A-plane or an M-plane in an upper part thereof, a plurality of protrusions having an inclined surface on an upper surface thereof, and nitride; a mask layer including a dielectric material and having at least a portion disposed on the protrusions; and a second layer disposed on the mask layer and including nitride.

Abstract translation: 一种生长衬底，包括具有包括在第一方向上倾斜的多个台阶的生长表面的衬底; 设置在所述生长面上的第一层，所述第一层在其上部包括A面或M面，在其上表面具有倾斜表面的多个突起和氮化物; 掩模层，其包括介电材料，并且至少具有设置在所述突起上的部分; 以及设置在掩模层上并包括氮化物的第二层。