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公开(公告)号:US20180151778A1
公开(公告)日:2018-05-31
申请号:US15576563
申请日:2016-05-25
Applicant: LG INNOTEK CO., LTD.
Inventor: Sun Woo PARK , Dong Hyun SUNG , Dae Hee LEE , Byoung Woo LEE , Kwang Ki CHOI , Jae Cheon HAN
CPC classification number: H01L33/387 , H01L33/0016 , H01L33/06 , H01L33/14 , H01L33/30 , H01L33/32 , H01L33/36 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
Abstract: Disclosed according to one embodiment is a light-emitting element comprising: a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second conductive layer electrically connected to the second semiconductor layer; a first conductive layer comprising a plurality of through electrodes electrically connected to the first semiconductor layer through the second conductive layer and the light-emitting structure; an insulation layer for electrically insulating the plurality of through electrodes from the active layer, the second semiconductor layer, and the second conductive layer; and an electrode pad disposed in an exposed area of the second conductive layer, wherein the plurality of through electrodes differ in the area of a first region electrically connected to the first semiconductor layer.
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公开(公告)号:US20140009930A1
公开(公告)日:2014-01-09
申请号:US13836941
申请日:2013-03-15
Applicant: LG INNOTEK CO., LTD.
Inventor: Jae Cheon HAN , Jung Myung MIN
IPC: F21V13/02
CPC classification number: F21V13/02 , H01L25/0753 , H01L33/505 , H01L33/507 , H01L33/56 , H01L2924/0002 , H01L2924/00
Abstract: A light emitting apparatus includes a first light source to generate light having a first main wavelength band, a second light source to generate light having a second main wavelength band, a first transparent layer surrounding the first and second light sources, a wavelength conversion layer disposed on the first transparent layer to convert at least one of the light having the first main wavelength band and the light having the second main wavelength band into light having a third main wavelength band, and a medium layer between the wavelength conversion layer and the first transparent layer. At least of the first or second light sources has a first refractive index, the first transparent layer has a second refractive index, the medium layer has a third refractive index, the wavelength conversion layer has a fourth refractive index, and the first to fourth refractive indexes are different from each other.
Abstract translation: 发光装置包括:第一光源,其产生具有第一主波长带的光;第二光源,其产生具有第二主波长带的光;围绕第一和第二光源的第一透明层; 在第一透明层上,将具有第一主波长带的光和具有第二主波长带的光中的至少一个转换成具有第三主波长带的光,以及在波长转换层和第一透明层之间的介质层 层。 至少第一或第二光源具有第一折射率,第一透明层具有第二折射率,介质层具有第三折射率,波长转换层具有第四折射率,第一至第四折射率 索引彼此不同。
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公开(公告)号:US20180301597A1
公开(公告)日:2018-10-18
申请号:US15576760
申请日:2016-05-25
Applicant: LG INNOTEK CO., LTD.
Inventor: Sun Woo PARK , Dong Hyun SUNG , Dae Hee LEE , Byoung Woo LEE , Kwang Ki CHOI , Jae Cheon HAN
Abstract: Disclosed according to one embodiment is a light-emitting element comprising: a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second conductive layer electrically connected to the second semiconductor layer; a first conductive layer which is disposed in a plurality of via holes passing through the light-emitting structure and second conductive layer and comprises a plurality of through electrodes electrically connected to the first semiconductor layer; an insulation layer for electrically insulating the plurality of through electrodes from the active layer, second semiconductor layer, and second conductive layer; and an electrode pad disposed in an exposed area of the second conductive layer, wherein the farther away the second conductive layer disposed between the plurality of through electrodes is from the electrode pad, the greater the width of the second conductive layer becomes.
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公开(公告)号:US20170358708A1
公开(公告)日:2017-12-14
申请号:US15542736
申请日:2016-01-12
Applicant: LG INNOTEK CO., LTD.
Inventor: Jae Cheon HAN
CPC classification number: H01L33/145 , H01L33/32 , H01L33/38
Abstract: A light emitting diode according to one embodiment comprises: a substrate; a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, which are on the substrate; a first pad electrode part on the first conductive semiconductor layer; a current blocking layer on the second conductive semiconductor layer; a second electrode on the first conductive semiconductor layer and the current blocking layer; and a second pad electrode part on the second electrode, wherein the width of the current blocking layer can become thicker as the current blocking layer becomes closer to the first pad electrode part from the second pad electrode part.
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