CURABLE RESIN FILM AND FIRST PROTECTIVE FILM FORMING SHEET

    公开(公告)号:US20180327637A1

    公开(公告)日:2018-11-15

    申请号:US15769469

    申请日:2016-11-02

    Abstract: This curable resin film is attached to a surface having bumps of a semiconductor wafer and is cured so as to form a first protective film on the surface, and when the curable resin film is cured by being heated at 160° C. for one hour, a yellow index (YI1) after curing is equal to or lower than 45, or when the curable resin film is cured by being irradiated with ultraviolet rays under conditions of illuminance of 230 mW/cm2, and light intensity of 510 mJ/cm2, a yellow index (YI2) after curing is equal to or lower than 45. The first protective film forming sheet is provided with a first supporting sheet, and the curable resin film is provided on one surface of the first supporting sheet.

    METHOD OF FORMING FIRST PROTECTIVE FILM

    公开(公告)号:US20220135828A1

    公开(公告)日:2022-05-05

    申请号:US17575811

    申请日:2022-01-14

    Abstract: A curable resin film of the present invention forms a first protective film (la) by attaching the curable resin film containing an epoxy-based thermosetting component having a weight-average molecular weight of 200 to 4,000 to a surface (5a) of a semiconductor wafer (5) having a plurality of bumps (51) with an average peak height (h1) of 50 to 400 μm, an average diameter of 60 to 500 μm, and an average pitch of 100 to 800 μm, heating the attached curable resin film at 100° C. to 200° C. for 0.5 to 3 hours, and curing the heated curable resin film, and when longitudinal sections thereof are observed by a scanning electron microscope, a ratio (h3/h1) of an average thickness (h3) of the first protective film (1a) at a center position between the bumps (51) to an average peak height (h1) of the bumps (51), and a ratio (h2/h1) of an average thickness (h2) of the first protective film (1a) at a position being in contact with the plurality of bumps (51) to the average peak height (h1) satisfy a relationship represented by the following expression of [{(h2/h1)−(h3/h1)}≤0.1].

    CURABLE RESIN FILM AND FIRST PROTECTIVE FILM FORMING SHEET

    公开(公告)号:US20180320029A1

    公开(公告)日:2018-11-08

    申请号:US15769189

    申请日:2016-11-02

    Abstract: A curable resin film of the present invention forms a first protective film (1a) by attaching the curable resin film containing an epoxy-based thermosetting component having a weight-average molecular weight of 200 to 4,000 to a surface (5a) of a semiconductor wafer (5) having a plurality of bumps (51) with an average peak height (h1) of 50 to 400 μm, an average diameter of 60 to 500 μm, and an average pitch of 100 to 800 μm, heating the attached curable resin film at 100° C. to 200° C. for 0.5 to 3 hours, and curing the heated curable resin film, and when longitudinal sections thereof are observed by a scanning electron microscope, a ratio (h3/h1) of an average thickness (h3) of the first protective film (1a) at a center position between the bumps (51) to an average peak height (h1) of the bumps (51), and a ratio (h2/h1) of an average thickness (h2) of the first protective film (1a) at a position being in contact with the plurality of bumps (51) to the average peak height (h1) satisfy a relationship represented by the following expression of [{(h2/h1)−(h3/h1)}≤0.1].

    FILM-SHAPED FIRING MATERIAL AND FILM-SHAPED FIRING MATERIAL WITH SUPPORT SHEET

    公开(公告)号:US20200277515A1

    公开(公告)日:2020-09-03

    申请号:US16646546

    申请日:2018-09-04

    Abstract: The present invention provides a film-shaped firing material 1 including sinterable metal particles 10, and a binder component 20, in which a content of the sinterable metal particles 10 is in a range of 15% to 98% by mass, a content of the binder component 20 is in a range of 2% to 50% by mass, a tensile elasticity of the film-shaped firing material at 60° C. is in a range of 4.0 to 10.0 MPa, and a breaking elongation thereof at 60° C. is 500% or greater; and a film-shaped firing material with a support sheet including the film-shaped firing material 1 which contains sinterable metal particles and a binder component, and a support sheet 2 which is provided on at least one side of the film-shaped firing material, in which an adhesive force (a2) of the film-shaped firing material to the support sheet is smaller than an adhesive force (a1) of the film-shaped firing material to a semiconductor wafer, the adhesive force (a1) is 0.1 N/25 mm or greater, and the adhesive force (a2) is in a range of 0.1 N/25 mm to 0.5 N/25 mm.

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