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    BACK GRINDING SHEET
    1.
    发明申请
    BACK GRINDING SHEET 有权
    后砂纸

    公开(公告)号：US20150255321A1

    公开(公告)日：2015-09-10

    申请号：US14430647

    申请日：2013-09-17

    Applicant: LINTEC Corporation

    Inventor： Tomochika Tominaga ,  Kazuyuki Tamura

    IPC: H01L21/683 ,  C09J7/02 ,  C09D133/14

    CPC classification number: H01L21/6836 ,  C08G18/6229 ,  C08G18/672 ,  C08G18/8116 ,  C08G2170/40 ,  C08K5/37 ,  C09D133/14 ,  C09J7/29 ,  C09J175/16 ,  C09J2201/606 ,  C09J2201/622 ,  C09J2203/326 ,  C09J2205/102 ,  C09J2433/00 ,  C09J2433/001 ,  C09J2433/006 ,  C09J2475/00 ,  C09J2475/006 ,  H01L2221/68327 ,  H01L2221/6834 ,  Y10T428/24826 ,  Y10T428/2848

    Abstract: The present invention relates to a back grinding sheet (BG sheet) (1a, 1b, 1c) having an unevenness-absorbing layer (12) on a substrate (11), in which the unevenness-absorbing layer is a layer formed of a film-forming composition containing (A) a urethane (meth)acrylate and (B) a polymerizable monomer except component (A) and the layer satisfies the following requirements (a) to (c): (a) a loss tangent at 70° C. measured at a frequency of 1 Hz is 1.5 or more, (b) a relaxation rate 300 seconds after a square (1 cm×1 cm) of the unevenness-absorbing layer is compressed at 25° C. and a compressive load of 10 N is 30% or less, and (c) a storage elastic modulus at 25° C. measured at a frequency of 1 Hz is 1.0 to 10.0 MPa. The BG sheet of the present invention has excellent absorptivity of uneven portions such as bumps in a semiconductor wafer and can suppress formation of gaps between bumps and the BG sheet and simultaneously suppress a phenomenon where the resin layer (unevenness-absorbing layer) of a BG sheet oozes from the edges of a roll when the BG sheet is wound up in the form of roll.

    Abstract translation: 本发明涉及在基板（11）上具有凹凸吸收层（12）的背面研磨片（BG片）（1a，1b，1c），其中，所述不平坦性吸收层是由膜形成的层 （A）氨基甲酸酯（甲基）丙烯酸酯和（B）除了组分（A）之外的可聚合单体和该层的组合物满足以下要求（a）至（c）：（a）70℃下的损耗角正切 以1Hz的频率测量为1.5以上，（b）在25℃下压缩不平坦吸收层的正方形（1cm×1cm）后的弛豫速度300秒，压缩载荷10 N为30％以下，（c）以1Hz的频率测定的25℃下的储能弹性模量为1.0〜10.0MPa。 本发明的BG片材具有对半导体晶片中的凸块等不均匀部分的吸收性优异，并且可以抑制凸块与BG片材之间的间隙的形成，同时抑制BG的树脂层（凹凸吸收层）的现象 当BG片以卷的形式卷绕时，片从辊的边缘渗出。

    Back grinding sheet
    4.
    发明授权
    Back grinding sheet 有权
    背面磨片

    公开(公告)号：US09443751B2

    公开(公告)日：2016-09-13

    申请号：US14430647

    申请日：2013-09-17

    Applicant: LINTEC CORPORATION

    Inventor： Tomochika Tominaga ,  Kazuyuki Tamura

    IPC: H01L21/683 ,  C09D133/14 ,  C09J7/02

    CPC classification number: H01L21/6836 ,  C08G18/6229 ,  C08G18/672 ,  C08G18/8116 ,  C08G2170/40 ,  C08K5/37 ,  C09D133/14 ,  C09J7/29 ,  C09J175/16 ,  C09J2201/606 ,  C09J2201/622 ,  C09J2203/326 ,  C09J2205/102 ,  C09J2433/00 ,  C09J2433/001 ,  C09J2433/006 ,  C09J2475/00 ,  C09J2475/006 ,  H01L2221/68327 ,  H01L2221/6834 ,  Y10T428/24826 ,  Y10T428/2848

    Abstract: The present invention relates to a back grinding sheet (BG sheet) (1a, 1b, 1c) having an unevenness-absorbing layer (12) on a substrate (11), in which the unevenness-absorbing layer is a layer formed of a film-forming composition containing (A) a urethane (meth)acrylate and (B) a polymerizable monomer except component (A) and the layer satisfies the following requirements (a) to (c): (a) a loss tangent at 70° C. measured at a frequency of 1 Hz is 1.5 or more, (b) a relaxation rate 300 seconds after a square (1 cm×1 cm) of the unevenness-absorbing layer is compressed at 25° C. and a compressive load of 10 N is 30% or less, and (c) a storage elastic modulus at 25° C. measured at a frequency of 1 Hz is 1.0 to 10.0 MPa. The BG sheet of the present invention has excellent absorptivity of uneven portions such as bumps in a semiconductor wafer and can suppress formation of gaps between bumps and the BG sheet and simultaneously suppress a phenomenon where the resin layer (unevenness-absorbing layer) of a BG sheet oozes from the edges of a roll when the BG sheet is wound up in the form of roll.

    Abstract translation: 本发明涉及在基板（11）上具有凹凸吸收层（12）的背面研磨片（BG片）（1a，1b，1c），其中，所述不平坦性吸收层是由膜形成的层 （A）氨基甲酸酯（甲基）丙烯酸酯和（B）除了组分（A）之外的可聚合单体和该层的组合物满足以下要求（a）至（c）：（a）70℃下的损耗角正切 以1Hz的频率测量为1.5以上，（b）在25℃下压缩不平坦吸收层的正方形（1cm×1cm）后的弛豫速度300秒，压缩载荷10 N为30％以下，（c）以1Hz的频率测定的25℃下的储能弹性模量为1.0〜10.0MPa。 本发明的BG片材具有对半导体晶片中的凸块等不均匀部分的吸收性优异，并且可以抑制凸块与BG片材之间的间隙的形成，同时抑制BG的树脂层（凹凸吸收层）的现象 当BG片以卷的形式卷绕时，片从辊的边缘渗出。

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