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公开(公告)号：US12080518B2
公开(公告)日：2024-09-03
申请号：US17795225
申请日：2021-01-12
Applicant: Lam Research Corporation
Inventor： Felix Leib Kozakevich , Alexei Marakhtanov , Bing Ji , Ranadeep Bhowmick , John Holland
CPC classification number: H01J37/32183 , H01J37/32577 , H03H7/38
Abstract: An impedance match is described. The impedance match includes a housing having a bottom portion and a top portion. The bottom portion has match components and the top portion has an elongated body. A low frequency input is connected through the bottom portion of the housing, and the low frequency input is interconnected to a first set of capacitors and inductors. A high frequency input is connected through the bottom portion of the housing, and the high frequency input is interconnected to a second set of capacitors and inductors. An elongated strap extends between the bottom portion and the top portion of the housing. A lower portion of the elongated strap is coupled to the second set of capacitors and inductors and an upper portion of the elongated strap is connected to an RF rod at an end of the elongated body.
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公开(公告)号：US20230059495A1
公开(公告)日：2023-02-23
申请号：US17793366
申请日：2021-01-30
Applicant: Lam Research Corporation
Inventor： Alexei Marakhtanov , Felix Kozakevich , Bing Ji , Ranadeep Bhowmick , Kenneth Lucchesi , John Holland
IPC: H01J37/32 , H01L21/683
Abstract: A fixed outer support flange (flange 1) is formed to circumscribe an electrode within a plasma processing system. Flange 1 has a vertical portion and a horizontal portion extending radially outward from a lower end of the vertical portion. An articulating outer support flange (flange 2) is formed to circumscribe flange 1. Flange 2 has a vertical portion and a horizontal portion extending radially outward from a lower end of the vertical portion. The vertical portion of flange 2 is positioned concentrically outside of the vertical portion of flange 1. Flange 2 is spaced apart from flange 1 and moveable along the vertical portion of flange 1. Each of a plurality of electrically conductive straps has a first end portion connected to flange 2 and a second end portion connected to flange 1.
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公开(公告)号：US20220199366A1
公开(公告)日：2022-06-23
申请号：US17691011
申请日：2022-03-09
Applicant: Lam Research Corporation
Inventor： Ranadeep Bhowmick , John Holland , Felix Leib Kozakevich , Bing Ji , Alexei Marakhtanov
IPC: H01J37/32
Abstract: A method for optimizing delivery of power to a plasma chamber is described. The method includes dividing each cycle of a low frequency (LF) radio frequency generator (RFG) into multiple time intervals. During each of the time intervals, a frequency offset of a high frequency (HF) RFG is generated for which the delivery of power is maximized. The frequency offsets provide a substantially inverse relationship compared to a voltage signal of the LF RFG for each cycle of the voltage signal. The frequency offsets for the time intervals are multiples of the low frequency. The substantially inverse relationship facilitates an increase in the delivery of power to the electrode. A total range of the frequency offsets from a reference HF frequency over the LF RF cycle depends on a power ratio of power that is supplied by the LF RFG and power that is supplied by the HF RFG.
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公开(公告)号：US12165844B2
公开(公告)日：2024-12-10
申请号：US18010194
申请日：2021-11-02
Applicant: Lam Research Corporation
Inventor： Alexei M. Marakhtanov , Felix Leib Kozakevich , Bing Ji , John P. Holland
Abstract: An impedance match housing is described. The impedance match housing includes an impedance matching circuit having an input that is coupled to a radio frequency (RF) generator. The impedance matching circuit has an output that is coupled to a first RF strap. The impedance match housing includes a uniformity control circuit coupled in parallel to a portion of the first RF strap to modify uniformity in a processing rate of a substrate when the substrate is processed within a plasma chamber.
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公开(公告)号：US20230298866A1
公开(公告)日：2023-09-21
申请号：US18010431
申请日：2021-11-02
Applicant: Lam Research Corporation
Inventor： Alexei Marakhtanov , Bing Ji , Ken Lucchesi , John Holland
CPC classification number: H01J37/32669 , H01F27/2823 , H01J2237/3343
Abstract: A system for performing a plasma process on a wafer is provided, including: a chamber configured to receive a wafer for plasma processing and having an interior defining a plasma processing region in which a plasma is provided for the plasma processing of the wafer; a first magnetic coil disposed above the chamber and centered about an axis perpendicular to a surface plane of the wafer and through an approximate center of the wafer; a first DC power supply configured to apply a first DC current to the first magnetic coil during the plasma processing, the applied first DC current producing a magnetic field in the plasma processing region that reduces non-uniformity of the plasma.
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Patent Agency Ranking
公开(公告)号：US20230282455A1
公开(公告)日：2023-09-07
申请号：US18013489
申请日：2022-05-17
Applicant: Lam Research Corporation
Inventor： Alecia Chantalle Griffin , Anthony de la Llera , Peter Bradley Phillips , Bing Ji
CPC classification number: H01J37/3266 , H01J37/3444 , H01J37/3244
Abstract: A substrate processing apparatus includes a vacuum chamber with a processing zone for processing a substrate using plasma and at least one magnetic field source configured to generate one or more active magnetic fields through the processing zone. The apparatus also includes a magnetic field sensor configured to detect a signal representing the one or more active magnetic fields, and a controller coupled to the magnetic field sensor, and the at least one magnetic field source. The controller is configured to detect a target value corresponding to at least one characteristic of the one or more active magnetic fields, set an initial current through the at least one magnetic field source, the initial current corresponding to the target value; and adjust a subsequent current through the at least one magnetic field source based on the detected signal representing the one or more active magnetic fields.
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公开(公告)号：US11158488B2
公开(公告)日：2021-10-26
申请号：US16452716
申请日：2019-06-26
Applicant: MKS Instruments, Inc. , LAM RESEARCH CORPORATION
Inventor： Aaron T. Radomski , Benjamin J. Gitlin , Larry J. Fisk, II , Mariusz Oldziej , Aaron M. Burry , Jonathan W. Smyka , Alexei Marakhtanov , Bing Ji , Felix Leib Kozakevich , John Holland , Ranadeep Bhowmick
IPC: H01J37/32
Abstract: A radio frequency (RF) generator system includes first and second RF power sources, each RF power source applying a respective RF signal and second RF signal to a load. The first RF signal is applied in accordance with the application of the second RF signal. The application of the first RF signal is synchronized to application of the second RF signal. The first RF signal may be amplitude modulated in synchronization with the second RF signal, and the amplitude modulation can include blanking of the first RF signal. A frequency offset may be applied to the first RF signal in synchronization with the second RF signal. A variable actuator associated with the first RF power source may be controlled in accordance with the second RF signal.
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公开(公告)号：US11935726B2
公开(公告)日：2024-03-19
申请号：US17480993
申请日：2021-09-21
Applicant: MKS Instruments, Inc. , LAM RESEARCH CORPORATION
Inventor： Aaron T. Radomski , Benjamin J. Gitlin , Larry J. Fisk, II , Mariusz Oldziej , Aaron M. Burry , Jonathan W. Smyka , Alexei Marakhtanov , Bing Ji , Felix Leib Kozakevich , John Holland , Ranadeep Bhowmick
IPC: H01J37/32
CPC classification number: H01J37/32183 , H01J2237/334
Abstract: A radio frequency (RF) generator system includes first and second RF power sources, each RF power source applying a respective RF signal and second RF signal to a load. The first RF signal is applied in accordance with the application of the second RF signal. The application of the first RF signal is synchronized to application of the second RF signal. The first RF signal may be amplitude modulated in synchronization with the second RF signal, and the amplitude modulation can include blanking of the first RF signal. A frequency offset may be applied to the first RF signal in synchronization with the second RF signal. A variable actuator associated with the first RF power source may be controlled in accordance with the second RF signal.
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公开(公告)号：US11908660B2
公开(公告)日：2024-02-20
申请号：US17691011
申请日：2022-03-09
Applicant: Lam Research Corporation
Inventor： Ranadeep Bhowmick , John Holland , Felix Leib Kozakevich , Bing Ji , Alexei Marakhtanov
IPC: H01J37/32
CPC classification number: H01J37/32174 , H01J37/32128 , H01J37/32165 , H01J37/32926
Abstract: A method for optimizing delivery of power to a plasma chamber is described. The method includes dividing each cycle of a low frequency (LF) radio frequency generator (RFG) into multiple time intervals. During each of the time intervals, a frequency offset of a high frequency (HF) RFG is generated for which the delivery of power is maximized. The frequency offsets provide a substantially inverse relationship compared to a voltage signal of the LF RFG for each cycle of the voltage signal. The frequency offsets for the time intervals are multiples of the low frequency. The substantially inverse relationship facilitates an increase in the delivery of power to the electrode. A total range of the frequency offsets from a reference HF frequency over the LF RF cycle depends on a power ratio of power that is supplied by the LF RFG and power that is supplied by the HF RFG.
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公开(公告)号：US20230054699A1
公开(公告)日：2023-02-23
申请号：US17793372
申请日：2021-01-30
Applicant: Lam Research Corporation
Inventor： Alexei Marakhtanov , Felix Kozakevich , Bing Ji , Ranadeep Bhowmick , John Holland
IPC: H01J37/32
Abstract: A tunable edge sheath (TES) system includes a coupling ring configured to couple to a bottom surface of an edge ring that surrounds a wafer support area within a plasma processing chamber. The TES system includes an annular-shaped electrode embedded within the coupling ring. The TES system includes a plurality of radiofrequency signal supply pins coupled to the electrode within the coupling ring. Each of the plurality of radiofrequency signal supply pins extends through a corresponding hole formed through a bottom surface of the coupling ring. The TES system includes a plurality of radiofrequency signal filters respectively connected to the plurality of radiofrequency supply pins. Each of the plurality of radiofrequency signal filters is configured to provide a high impedance to radiofrequency signals used to generate a plasma within the plasma processing chamber.
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