公开(公告)号：US20240240316A1

公开(公告)日：2024-07-18

申请号：US18622472

申请日：2024-03-29

Applicant: Lam Research Corporation

Inventor： Purushottam Kumar ,  Adrien LaVoie ,  Jun Qian ,  Hu Kang ,  Ishtak Karim ,  Fung Suong Ou

IPC: C23C16/455 ,  C23C16/52 ,  H01L21/02 ,  H01L21/285

CPC classification number: C23C16/45527 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/28556

Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

公开(公告)号：US11434567B2

公开(公告)日：2022-09-06

申请号：US16806560

申请日：2020-03-02

Applicant: LAM RESEARCH CORPORATION

Inventor： Adrien LaVoie ,  Hu Kang ,  Karl Frederick Leeser

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/507 ,  C23C16/509 ,  C23C16/517

Abstract: A substrate processing system includes a first power source configured to supply plasma having a first power level, a second power source configured to supply plasma having a second power level greater than the first power level, and a controller configured to dose a process chamber with precursor. The first power level is sufficient to enhance adsorption of the precursor on a surface of a substrate and is insufficient to decompose the precursor that is adsorbed. The controller is further configured to remove a portion of the precursor that does not adsorb onto the substrate from the process chamber while the plasma having the first power level is being supplied and activate the precursor that is adsorbed using plasma having the second power level while the plasma having the first power level is still being supplied. The second power level is sufficient to decompose the precursor that is adsorbed.

公开(公告)号：US20200152446A1

公开(公告)日：2020-05-14

申请号：US16740075

申请日：2020-01-10

Applicant: Lam Research Corporation

Inventor： Jun Qian ,  Hu Kang ,  Adrien LaVoie ,  Seiji Matsuyama ,  Purushottam Kumar

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/02

Abstract: Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.

公开(公告)号：US10526701B2

公开(公告)日：2020-01-07

申请号：US14814372

申请日：2015-07-30

Applicant: Lam Research Corporation

Inventor： Purushottam Kumar ,  Adrien LaVoie ,  Hu Kang ,  Jun Qian ,  Tuan Nguyen ,  Ye Wang

IPC: C23C16/50 ,  C23C16/455

Abstract: Methods of depositing uniform films on substrates using multi-cyclic atomic layer deposition techniques are described. Methods involve varying one or more parameter values from cycle to cycle to tailor the deposition profile. For example, some methods involve repeating a first ALD cycle using a first carrier gas flow rate during precursor exposure and a second ALD cycle using a second carrier gas flow rate during precursor exposure. Some methods involve repeating a first ALD cycle using a first duration of precursor exposure and a second ALD cycle using a second duration of precursor exposure.

公开(公告)号：US10526700B2

公开(公告)日：2020-01-07

申请号：US16130919

申请日：2018-09-13

Applicant: Lam Research Corporation

Inventor： Purushottam Kumar ,  Hu Kang ,  Adrien LaVoie ,  Yi Chung Chiu ,  Frank L. Pasquale ,  Jun Qian ,  Chloe Baldasseroni ,  Shankar Swaminathan ,  Karl F. Leeser ,  David Charles Smith ,  Wei-Chih Lai

IPC: C23C16/455

Abstract: The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.

公开(公告)号：US10378107B2

公开(公告)日：2019-08-13

申请号：US14850816

申请日：2015-09-10

Applicant: Lam Research Corporation

Inventor： Ramesh Chandrasekharan ,  Saangrut Sangplung ,  Shankar Swaminathan ,  Frank Pasquale ,  Hu Kang ,  Adrien LaVoie ,  Edward Augustyniak ,  Yukinori Sakiyama ,  Chloe Baldasseroni ,  Seshasayee Varadarajan ,  Basha Sajjad ,  Jennifer L. Petraglia

IPC: C23C16/50 ,  C23C16/52 ,  H01J37/32 ,  C23C16/455

Abstract: A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.

公开(公告)号：US09970108B2

公开(公告)日：2018-05-15

申请号：US14798652

申请日：2015-07-14

Applicant: Lam Research Corporation

Inventor： Jun Qian ,  Hu Kang ,  Purushottam Kumar ,  Chloe Baldasseroni ,  Heather Landis ,  Andrew Kenichi Duvall ,  Mohamed Sabri ,  Ramesh Chandrasekharan ,  Karl Leeser ,  Shankar Swaminathan ,  David Smith ,  Jeremiah Baldwin ,  Eashwar Ranganathan ,  Adrien LaVoie ,  Frank Pasquale ,  Jeongseok Ha ,  Ingi Bae

IPC: C23C16/46 ,  C23C16/455 ,  C23C16/448

CPC classification number: C23C16/45544 ,  C23C16/4481 ,  C23C16/4554

Abstract: A vapor delivery system includes an ampoule to store liquid precursor and a heater to partially vaporize the liquid precursor. A first valve communicates with a push gas source and the ampoule. A second valve supplies vaporized precursor to a heated injection manifold. A valve manifold includes a first node in fluid communication with an outlet of the heated injection manifold, a third valve having an inlet in fluid communication with the first node and an outlet in fluid communication with vacuum, a fourth valve having an inlet in fluid communication with the first node and an outlet in fluid communication with a second node, a fifth valve having an outlet in fluid communication with the second node, and a sixth valve having an outlet in fluid communication with the second node. A gas distribution device is in fluid communication with the second node.

公开(公告)号：US20170327947A1

公开(公告)日：2017-11-16

申请号：US15667980

申请日：2017-08-03

Applicant: LAM RESEARCH CORPORATION

Inventor： Adrien LaVoie ,  Hu Kang ,  Karl Leeser

IPC: C23C16/455 ,  C23C16/509 ,  C23C16/507 ,  C23C16/517 ,  C23C16/40

CPC classification number: C23C16/4554 ,  C23C16/401 ,  C23C16/455 ,  C23C16/45536 ,  C23C16/45538 ,  C23C16/45542 ,  C23C16/507 ,  C23C16/509 ,  C23C16/517

Abstract: A method for processing a substrate in a substrate processing system includes flowing reactant gases into a process chamber including a substrate, supplying a first power level sufficient to promote rearrangement of molecules on a surface of the substrate, waiting a first predetermined period, and, after the first predetermined period, performing plasma-enhanced, pulsed chemical vapor deposition of film on the substrate by supplying one or more precursors while supplying a second power level for a second predetermined period. The second power level is greater than the first power level. The method further includes removing reactants from the process chamber.

公开(公告)号：US09793110B2

公开(公告)日：2017-10-17

申请号：US14987542

申请日：2016-01-04

Applicant: Lam Research Corporation

Inventor： Hu Kang ,  Shankar Swaminathan ,  Jun Qian ,  Wanki Kim ,  Dennis Hausmann ,  Bart J. van Schravendijk ,  Adrien LaVoie

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/67 ,  H01L21/762 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/02274 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/76826 ,  H01L21/76837

Abstract: Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming seam-free, void-free fill in both narrow and wide features. The methods may be performed without any intervening etching operations to achieve a single step deposition. In various implementations, a first operation is performed using a novel PEALD fill mechanism to fill narrow gaps and line wide gaps. A second operation may be performed using PECVD methods to continue filling the wide gaps.

公开(公告)号：US20170178898A1

公开(公告)日：2017-06-22

申请号：US15051886

申请日：2016-02-24

Applicant: Lam Research Corporation

Inventor： Hu Kang ,  Ishtak Karim ,  Purushottam Kumar ,  Jun Qian ,  Ramesh Chandrasekharan ,  Adrien LaVoie

IPC: H01L21/02 ,  H01J37/32

CPC classification number: H01L21/02274 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/4585 ,  C23C16/52 ,  H01J37/32467 ,  H01J37/32477 ,  H01J37/32715 ,  H01J37/32724 ,  H01J2237/332 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/68714 ,  H01L21/68735

Abstract: A process tuning kit for use in a chemical deposition apparatus wherein the process tuning kit includes a carrier ring, horseshoes and shims. The horseshoes have the same dimensions and the shims are provided in sets with different thicknesses to control the height of the horseshoes with respect to an upper surface of a pedestal assembly on which the horseshoes and shims are mounted. A semiconductor substrate is transported into a vacuum chamber of the chemical deposition apparatus by the carrier ring which is placed on the horseshoes such that minimum contact area supports lift the substrate from the carrier ring and support the substrate at a predetermined offset with respect to an upper surface of the pedestal assembly. During processing of the substrate, backside deposition can be reduced by using shims of desired thickness to control the predetermined offset.