公开(公告)号：US11195706B2

公开(公告)日：2021-12-07

申请号：US16384442

申请日：2019-04-15

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Felix Kozakevich ,  Michael C. Kellogg ,  John Patrick Holland ,  Zhigang Chen ,  Kenneth Lucchesi ,  Lin Zhao

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/687

Abstract: Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an RF signal to a main electrode within the plasma chamber. The RF signal is generated based on a frequency of operation of a first RF generator. The method further includes providing another RF signal to an edge electrode within the plasma chamber. The other RF signal is generated based on the frequency of operation of the first RF generator. The method includes receiving a first measurement of a variable, receiving a second measurement of the variable, and modifying a phase of the other RF signal based on the first measurement and the second measurement. The method includes changing a magnitude of a variable associated with a second RF generator to achieve the pre-determined factor.

公开(公告)号：US10658194B2

公开(公告)日：2020-05-19

申请号：US15244311

申请日：2016-08-23

Applicant: Lam Research Corporation

Inventor： Zhongkui Tan ,  Qing Xu ,  Qian Fu ,  Hua Xiang ,  Lin Zhao

IPC: H01L27/108 ,  H01L21/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/02 ,  H01J37/32 ,  C23C16/52 ,  C23C16/50 ,  C23C16/455

Abstract: A method for processing a substrate in a processing chamber, comprising forming a deposition over the substrate is provided. A silicon containing gas is flowed into the processing chamber. A COS containing gas is flowed into the processing chamber. A plasma is formed from the silicon containing gas and the COS containing gas in the processing chamber, wherein the plasma provides the deposition over the substrate.

公开(公告)号：US20190080885A1

公开(公告)日：2019-03-14

申请号：US16008529

申请日：2018-06-14

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Lin Zhao ,  Felix Kozakevich ,  Kenneth Lucchesi ,  Zhigang Chen ,  John Patrick Holland

IPC: H01J37/32

Abstract: Systems and methods for providing a multi regime plasma wafer processing are described. The systems and methods have three states. During a first one of the states, an etching operation is performed. In a second one of the states, a power level of a kilohertz radio frequency signal is greater than zero to increase directionality of ions that are incident on a bottom surface of a stack layer. In a third one of the states, there is a reduction in a loss of mask on top of the stack layer and deposition may be performed.

公开(公告)号：US10283330B2

公开(公告)日：2019-05-07

申请号：US15636519

申请日：2017-06-28

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Felix Kozakevich ,  Michael C. Kellogg ,  John Patrick Holland ,  Zhigang Chen ,  Kenneth Lucchesi ,  Lin Zhao

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/687

Abstract: Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an RF signal to a main electrode within the plasma chamber. The RF signal is generated based on a frequency of operation of a first RF generator. The method further includes providing another RF signal to an edge electrode within the plasma chamber. The other RF signal is generated based on the frequency of operation of the first RF generator. The method includes receiving a first measurement of a variable, receiving a second measurement of the variable, and modifying a phase of the other RF signal based on the first measurement and the second measurement. The method includes changing a magnitude of a variable associated with a second RF generator to achieve the pre-determined factor.

公开(公告)号：US10002746B1

公开(公告)日：2018-06-19

申请号：US15703280

申请日：2017-09-13

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Lin Zhao ,  Felix Kozakevich ,  Kenneth Lucchesi ,  Zhigang Chen ,  John Patrick Holland

IPC: H01J37/00 ,  H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/3244 ,  H01J37/3255 ,  H01J2237/334

Abstract: Systems and methods for providing a multi regime plasma wafer processing are described. The systems and methods have three states. During a first one of the states, an etching operation is performed. In a second one of the states, a power level of a kilohertz radio frequency signal is greater than zero to increase directionality of ions that are incident on a bottom surface of a stack layer. In a third one of the states, there is a reduction in a loss of mask on top of the stack layer and deposition may be performed.

公开(公告)号：US20190244788A1

公开(公告)日：2019-08-08

申请号：US16384442

申请日：2019-04-15

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Felix Kozakevich ,  Michael C. Kellogg ,  John Patrick Holland ,  Zhigang Chen ,  Kenneth Lucchesi ,  Lin Zhao

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01J37/3299 ,  H01J37/32091 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32385 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/68735

Abstract: Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an RF signal to a main electrode within the plasma chamber. The RF signal is generated based on a frequency of operation of a first RF generator. The method further includes providing another RF signal to an edge electrode within the plasma chamber. The other RF signal is generated based on the frequency of operation of the first RF generator. The method includes receiving a first measurement of a variable, receiving a second measurement of the variable, and modifying a phase of the other RF signal based on the first measurement and the second measurement. The method includes changing a magnitude of a variable associated with a second RF generator to achieve the pre-determined factor.

公开(公告)号：US10304662B2

公开(公告)日：2019-05-28

申请号：US16008529

申请日：2018-06-14

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Lin Zhao ,  Felix Kozakevich ,  Kenneth Lucchesi ,  Zhigang Chen ,  John Patrick Holland

IPC: H01J37/00 ,  H01J37/32

Abstract: Systems and methods for providing a multi regime plasma wafer processing are described. The systems and methods have three states. During a first one of the states, an etching operation is performed. In a second one of the states, a power level of a kilohertz radio frequency signal is greater than zero to increase directionality of ions that are incident on a bottom surface of a stack layer. In a third one of the states, there is a reduction in a loss of mask on top of the stack layer and deposition may be performed.

公开(公告)号：US20180025891A1

公开(公告)日：2018-01-25

申请号：US15636519

申请日：2017-06-28

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Felix Kozakevich ,  Michael C. Kellogg ,  John Patrick Holland ,  Zhigang Chen ,  Kenneth Lucchesi ,  Lin Zhao

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/3299 ,  H01J37/32091 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32385 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/68735

Abstract: Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an RF signal to a main electrode within the plasma chamber. The RF signal is generated based on a frequency of operation of a first RF generator. The method further includes providing another RF signal to an edge electrode within the plasma chamber. The other RF signal is generated based on the frequency of operation of the first RF generator. The method includes receiving a first measurement of a variable, receiving a second measurement of the variable, and modifying a phase of the other RF signal based on the first measurement and the second measurement. The method includes changing a magnitude of a variable associated with a second RF generator to achieve the pre-determined factor.