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    Broadband tunable semiconductor laser source
    1.
    发明授权
    Broadband tunable semiconductor laser source 失效
    宽带可调半导体激光源

    公开(公告)号：US6108362A

    公开(公告)日：2000-08-22

    申请号：US954305

    申请日：1997-10-17

    申请人： Laura Ellen Adams ,  Clyde George Bethea ,  Wei-Chiao Fang ,  Gerald Nykolak ,  Roosevelt People ,  Arthur Mike Sergent ,  Tawee Tanbun-Ek ,  Won-Tien Tsang

    发明人： Laura Ellen Adams ,  Clyde George Bethea ,  Wei-Chiao Fang ,  Gerald Nykolak ,  Roosevelt People ,  Arthur Mike Sergent ,  Tawee Tanbun-Ek ,  Won-Tien Tsang

    IPC分类号： H01S3/10 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/00 ,  H01S3/08

    CPC分类号： H01S5/06258 ,  H01S5/10

    摘要： A tunable semiconductor laser comprises a gain section having an MQW active region, a uniform pitch grating DFB region, and first waveguide. A composite reflector, including a second MQW region and a second waveguide, forms a cavity resonator with the DFB region. A voltage applied to the composite reflector induces a quantum confined stark effect, thereby allowing the wavelength to be altered. In one embodiment, the current drive to the active region and the shape of the first waveguide (e.g., a raised-sine function) are mutually adapted so that N longitudinal modes have essentially the same threshold gain and so that the DFB region spanned by the first waveguide is segmented into N zones, each zone providing optical feedback at a different wavelength corresponding to a different longitudinal mode.

    摘要翻译： 可调谐半导体激光器包括具有MQW有源区，均匀间距光栅DFB区和第一波导的增益部。 包括第二MQW区域和第二波导的复合反射器与DFB区域形成空腔谐振器。 施加到复合反射器的电压引起量子限制的斯塔克效应，从而允许改变波长。 在一个实施例中，对有源区域的当前驱动和第一波导的形状（例如，升高的正弦函数）相互适应，使得N个纵向模式具有基本上相同的阈值增益，并且使得由 第一波导被分割成N个区域，每个区域提供对应于不同纵向模式的不同波长的光学反馈。

    Mounting technology for intersubband light emitters
    2.
    发明授权
    Mounting technology for intersubband light emitters 有权
    子带发射器的安装技术

    公开(公告)号：US06326646B1

    公开(公告)日：2001-12-04

    申请号：US09448929

    申请日：1999-11-24

    申请人： James Nelson Baillargeon ,  Federico Capasso ,  Alfred Yi Cho ,  George Sung-Nee Chu ,  Claire Gmachl ,  Albert Lee Hutchinson ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    发明人： James Nelson Baillargeon ,  Federico Capasso ,  Alfred Yi Cho ,  George Sung-Nee Chu ,  Claire Gmachl ,  Albert Lee Hutchinson ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC分类号： H01L3300

    CPC分类号： B82Y20/00 ,  H01S5/0202 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/0425 ,  H01S5/2275 ,  H01S5/3402

    摘要： A mounting technology that increases the cw operating temperature of intersubband lasers, without increasing the risk of hot spots near the facets and short circuits near the perimeter of the laser chip, is described. In accordance with one embodiment of our invention, a method of fabricating a intersubband semiconductor laser comprises the steps of providing a single crystal semiconductor substrate, forming on the substrate an epitaxial region that includes a core region and an intersubband active region in the core region, forming front and back facets that define an optical cavity resonator, forming a metal electrode on the epitaxial region so as to provide an electrical connection to said active region, and mounting said laser on a heat sink, characterized in that the mounting step includes the steps of (i) soldering the electrode to the heat sink so that the front facet overhangs an edge of the heat sink and (ii) cleaving off the overhanging portion of the laser so as to form a new front facet that is essentially flush with the edge of said heat sink. In accordance with another embodiment, our invention is further characterized in that metal electrode to the epitaxial region is recessed from the edges of the laser chip. In accordance with yet another embodiment, our invention is further characterized in that the back facet of the laser is coated so that any solder that might tend to creep onto the back facet contacts the coating and not semiconductor material (in particular the ends of the active region).

    摘要翻译： 描述了增加带间激光器的cw工作温度的安装技术，而不增加靠近激光芯片周边的面和短路附近的热点的风险。 根据本发明的一个实施例，一种制造子带间半导体激光器的方法包括以下步骤：提供单晶半导体衬底，在衬底上形成包含核心区域和芯区域中的子带间有源区域的外延区域， 形成限定光腔谐振器的前和后刻面，在所述外延区域上形成金属电极，以提供与所述有源区域的电连接，以及将所述激光器安装在散热器上，其特征在于，所述安装步骤包括步骤 （i）将电极焊接到散热器，使得前刻面突出于散热器的边缘，并且（ii）从激光器的悬垂部分分离，以形成基本上与边缘齐平的新的前刻面 的所述散热器。 根据另一个实施例，本发明的特征还在于，到外延区域的金属电极从激光芯片的边缘凹进。 根据又一个实施例，本发明的特征还在于，激光器的后面被涂覆，使得任何可能趋于蠕变到背面上的焊料与涂层接触而不是半导体材料（特别是活性物质的端部） 地区）。

    Unipolar, intraband optoelectronic transducers with micro-cavity resonators
    3.
    发明授权
    Unipolar, intraband optoelectronic transducers with micro-cavity resonators 有权
    具有微腔谐振器的单极，内部光电转换器

    公开(公告)号：US07092421B2

    公开(公告)日：2006-08-15

    申请号：US10651466

    申请日：2003-08-30

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Raffaele Colombelli ,  Claire F. Gmachl ,  Oskar Jon Painter ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Kartik Srinivasan ,  Donald Milan Tennant ,  Mariano Troccoli

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Raffaele Colombelli ,  Claire F. Gmachl ,  Oskar Jon Painter ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Kartik Srinivasan ,  Donald Milan Tennant ,  Mariano Troccoli

    IPC分类号： H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/1042 ,  H01S5/105 ,  H01S5/187 ,  H01S5/3213 ,  H01S5/3422 ,  H01S5/4087 ,  H01S5/42 ,  H01S2302/02

    摘要： An optoelectronic transducer comprises a unipolar, intraband active region and a micro-cavity resonator. The resonator includes a 2D array of essentially equally spaced regions that exhibits resonant modes. Each of the spaced regions has a depth that extends through the active region and has an average refractive index that is different from that of the active region. The refractive index contrast, the spacing of the spaced regions, and the dimensions of the spaced regions are mutually adapted so that the array acts as a micro-cavity resonator and so that at least one frequency of the resonant modes of the array falls within the spectrum of an optoelectronic parameter of the active region (i.e., the gain spectrum where the transducer is a laser; the absorption spectrum where the transducer is a photodetector). In a first embodiment, the transducer is an ISB laser, whereas in a second embodiment it is a unipolar, intraband photodetector. In other embodiments, the laser is a surface-emitting ISB laser and the photodetector is a vertically-illuminated detector. In another embodiment, a nonlinear optical material is optically coupled to the micro-cavity resonator, which in one case allows an ISB laser to exhibit bistable operation.

    摘要翻译： 光电转换器包括单极性，内部有源区和微腔谐振器。 谐振器包括呈现谐振模式的基本上等间隔的区域的2D阵列。 每个间隔区域具有延伸穿过有源区域并具有不同于有源区域的平均折射率的深度。 折射率对比度，间隔区域的间隔和间隔区域的尺寸相互适应，使得阵列充当微腔谐振器，并且使得阵列的谐振模式的至少一个频率落入 有源区的光电参数的光谱（即，换能器是激光的增益光谱;换能器是光电检测器的吸收光谱）。 在第一实施例中，换能器是ISB激光器，而在第二实施例中，它是单极的，内部的光检测器。 在其他实施例中，激光是表面发射ISB激光器，并且光电检测器是垂直照明的检测器。 在另一个实施例中，非线性光学材料光耦合到微腔谐振器，在一种情况下允许ISB激光器呈现双稳态操作。

    Broadband cascade light emitters
    4.
    发明授权
    Broadband cascade light emitters 有权
    宽带级联发射器

    公开(公告)号：US07010010B2

    公开(公告)日：2006-03-07

    申请号：US10465253

    申请日：2003-06-19

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Milton L. Peabody ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alexander Soibel

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Milton L. Peabody ,  Arthur Mike Sergent ,  Deborah Lee Sivco ,  Alexander Soibel

    IPC分类号： H01S5/00

    CPC分类号： B82Y20/00 ,  H01S5/06 ,  H01S5/1096 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3422 ,  H01S5/34306 ,  H01S5/34313 ,  H01S2304/02

    摘要： A broadband CLE capable of operation simultaneously at multiple wavelengths comprises: a core region including a multiplicity or cascade of stages, each stage including a radiative transition region. A first group of stages emits radiation at a first wavelength and at a first aggregate intensity per group, and a second group of stages emits radiation at a second wavelength and at a second aggregate intensity per group lower than the first intensity. The invention is characterized in that the second group has more stages than said first group, and the per-stage intensity of the first group is greater than that of the second group. This design reduces the difference between said first and second aggregate intensities. In one embodiment, groups that are located at or near to the ends of the cascade have more stages than groups that are centrally located within the cascade regardless of their wavelength. Our invention significantly reduces variations in modal gain across the desired broadband spectrum and produces sufficiently flat gain without requiring elaborate redesign of the stages. These features enable cw operation of a broadband intersubband laser.

    摘要翻译： 能够在多个波长同时运行的宽带CLE包括：包括多个或级联级的核心区域，每个阶段包括辐射过渡区域。 第一组阶段以每组发射第一波长和第一聚集强度的辐射，而第二组阶段以低于第一强度的第二波长发射辐射，并以每组的第二聚集强度发射。 本发明的特征在于，第二组具有比所述第一组更多的阶段，并且第一组的每阶段强度大于第二组的每阶段强度。 该设计减少了所述第一和第二聚集强度之间的差异。 在一个实施例中，位于级联端部处或附近的组具有比级联中心位置的级更多的级，而不管它们的波长如何。 我们的发明显着地减少了所需宽带频谱的模态增益的变化，并产生足够平坦的增益，而不需要对级进行精心的重新设计。 这些功能可以实现宽带子带间激光器的cw操作。

    Method for design and development of a semiconductor laser device
    9.
    发明授权
    Method for design and development of a semiconductor laser device 失效
    半导体激光器件的设计和开发方法

    公开(公告)号：US06248604B1

    公开(公告)日：2001-06-19

    申请号：US09395934

    申请日：1999-09-14

    申请人： Julie S. Eng ,  Joseph Michael Freund ,  George John Przybylek ,  Dennis Mark Romero ,  Arthur Mike Sergent

    发明人： Julie S. Eng ,  Joseph Michael Freund ,  George John Przybylek ,  Dennis Mark Romero ,  Arthur Mike Sergent

    IPC分类号： G02R3126

    CPC分类号： H01S5/0014

    摘要： A method for testing semiconductor laser devices is described. The method includes testing a monolithically integrated semiconductor laser device via electrical contact testing and/or far field testing. These tests will provide the total performance of the entire device. Further, the method includes accurate cleaving off of a portion of the laser device and re-testing to determine the relative performance of the remainder of the device. Through comparison of the test and re-test results, it is possible to reduce the design cycle for monolithically integrated semiconductor laser devices by detecting design flaws and imperfections or by ascertaining a more advantageous design.

    摘要翻译： 对半导体激光器件的测试方法进行了说明。 该方法包括通过电接触测试和/或远场测试来测试单片集成半导体激光器件。 这些测试将提供整个设备的总体性能。 此外，该方法包括精确地分离激光器件的一部分并重新测试以确定器件的其余部分的相对性能。 通过比较测试和重新测试结果，可以通过检测设计缺陷和缺陷或通过确定更有利的设计来减少单片集成半导体激光器件的设计周期。