公开(公告)号：US08674517B2

公开(公告)日：2014-03-18

申请号：US13328175

申请日：2011-12-16

申请人： Laurent-Luc Chapelon ,  Mohamed Bouchoucha

发明人： Laurent-Luc Chapelon ,  Mohamed Bouchoucha

IPC分类号： H01L23/488 ,  H01L21/50

CPC分类号： H01L24/16 ,  H01L23/481 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/50 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/02372 ,  H01L2224/0239 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/13199 ,  H01L2224/13311 ,  H01L2224/13347 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/83862 ,  H01L2224/9211 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/05099 ,  H01L2924/00 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： A semiconductor device includes an assembly of two integrated circuits. The assembly has a layer of photoresist filling the space between the two integrated circuits, and at least one electrically conducting pillar within the resist and electrically coupling the two integrated circuits.

摘要翻译： 半导体器件包括两个集成电路的组件。 组件具有填充两个集成电路之间的空间的光致抗蚀剂层，以及抗蚀剂内的至少一个导电柱，并电耦合两个集成电路。

公开(公告)号：US08726736B2

公开(公告)日：2014-05-20

申请号：US13524699

申请日：2012-06-15

申请人： Mohamed Bouchoucha ,  Pascal Chausse ,  Laurent-Luc Chapelon

发明人： Mohamed Bouchoucha ,  Pascal Chausse ,  Laurent-Luc Chapelon

IPC分类号： G01B5/00

CPC分类号： H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for determining, in a first semiconductor material wafer having at least one through via, mechanical stress induced by the at least one through via, this method including the steps of: manufacturing a test structure from a second wafer of the same nature as the first wafer, in which the at least one through via is formed by a substantially identical method, a rear surface layer being further arranged on this second wafer so that the via emerges on the layer; measuring the mechanical stress in the rear surface layer; and deducing therefrom the mechanical stress induced in the first semiconductor material wafer.

摘要翻译： 一种用于在具有由所述至少一个通孔引起的至少一个通孔机械应力的第一半导体材料晶片中确定该方法，所述方法包括以下步骤：从与所述至少一个通孔相同性质的第二晶片制造测试结构， 第一晶片，其中通过基本相同的方法形成所述至少一个通孔，在所述第二晶片上进一步布置后表面层，使得所述通孔出现在所述层上; 测量后表面层的机械应力; 并从中推导出在第一半导体材料晶片中引起的机械应力。

公开(公告)号：US20120153475A1

公开(公告)日：2012-06-21

申请号：US13328175

申请日：2011-12-16

申请人： Laurent-Luc Chapelon ,  Mohamed Bouchoucha

发明人： Laurent-Luc Chapelon ,  Mohamed Bouchoucha

IPC分类号： H01L23/488 ,  H01L21/50

CPC分类号： H01L24/16 ,  H01L23/481 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/50 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/02372 ,  H01L2224/0239 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/13199 ,  H01L2224/13311 ,  H01L2224/13347 ,  H01L2224/16145 ,  H01L2224/16147 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/83862 ,  H01L2224/9211 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/05099 ,  H01L2924/00 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： A semiconductor device includes an assembly of two integrated circuits. The assembly has a layer of photoresist filling the space between the two integrated circuits, and at least one electrically conducting pillar within the resist and electrically coupling the two integrated circuits.

摘要翻译： 半导体器件包括两个集成电路的组件。 组件具有填充两个集成电路之间的空间的光致抗蚀剂层，以及抗蚀剂内的至少一个导电柱，并电耦合两个集成电路。

公开(公告)号：US20130112974A1

公开(公告)日：2013-05-09

申请号：US13524699

申请日：2012-06-15

申请人： Mohamed Bouchoucha ,  Pascal Chausse ,  Laurent-Luc Chapelon

发明人： Mohamed Bouchoucha ,  Pascal Chausse ,  Laurent-Luc Chapelon

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for determining, in a first semiconductor material wafer having at least one through via, mechanical stress induced by the at least one through via, this method including the steps of: manufacturing a test structure from a second wafer of the same nature as the first wafer, in which the at least one through via is formed by a substantially identical method, a rear surface layer being further arranged on this second wafer so that the via emerges on the layer; measuring the mechanical stress in the rear surface layer; and deducing therefrom the mechanical stress induced in the first semiconductor material wafer.

摘要翻译： 一种用于在具有由所述至少一个通孔引起的至少一个通孔机械应力的第一半导体材料晶片中确定该方法，所述方法包括以下步骤：从与所述至少一个通孔相同性质的第二晶片制造测试结构， 第一晶片，其中通过基本相同的方法形成所述至少一个通孔，在所述第二晶片上进一步布置后表面层，使得所述通孔出现在所述层上; 测量后表面层的机械应力; 并从中推导出在第一半导体材料晶片中引起的机械应力。