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公开(公告)号：US20120111834A1
公开(公告)日：2012-05-10
申请号：US13353993
申请日：2012-01-19
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate a plasma in the process chamber, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译： 等离子体处理装置包括处理室，用于支撑工件的压板，被配置为在处理室中产生等离子体的源和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。
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公开(公告)号：US20100255665A1
公开(公告)日：2010-10-07
申请号：US12644103
申请日：2009-12-22
IPC分类号： H01L21/26 , C23F1/00 , C23C16/00 , H01L21/3065
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译： 等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。
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公开(公告)号：US08101510B2
公开(公告)日：2012-01-24
申请号：US12644103
申请日：2009-12-22
IPC分类号： H01L21/26 , H01L21/3065 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译： 等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。
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公开(公告)号：US07767977B1
公开(公告)日：2010-08-03
申请号：US12417929
申请日：2009-04-03
CPC分类号： H01J37/08 , H01J27/024 , H01J37/09 , H01J2237/0451 , H01J2237/0453 , H01J2237/0456 , H01J2237/065 , H01J2237/08 , H01J2237/083 , H01J2237/31 , H01J2237/31701 , Y10S438/961
摘要： An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator. The plasma sheath modulator is configured to control a shape of a boundary between plasma and a plasma sheath proximate the extraction aperture. The plasma sheath modulator may include a pair of insulators positioned in the arc chamber and spaced apart by a gap positioned proximate the extraction aperture. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.
摘要翻译： 离子源包括具有提取孔的电弧室和等离子体鞘调制器。 等离子体鞘调制器被配置为控制等离子体和靠近提取孔的等离子体鞘之间的边界的形状。 等离子体鞘调制器可以包括位于电弧室中的一对绝缘体，并且间隔开位于靠近提取孔的间隙。 可以通过离子源产生具有高电流密度的良好聚焦的离子束。 高电流密度离子束可以提高相关过程的吞吐量。 也可以控制离子束的发射。
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5.发明授权公开(公告)号：US09024273B2
公开(公告)日：2015-05-05
申请号：US12763652
申请日：2010-04-20
IPC分类号： H01J37/08 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/08
摘要： An apparatus that generates molecular ions and methods to generate molecular ions are disclosed. At least a first species is ionized in an ion source. The first species ions and/or first species combine to form molecular ions. These molecular ions may be transported to a second chamber, which may be an arc chamber or diffusion chamber, and are extracted. The molecular ions may have a larger atomic mass than the first species or first species ions. A second species also may be ionized with the first species to form molecular ions. In one instance, the first and second species are both molecules.
摘要翻译： 公开了一种产生分子离子的装置和产生分子离子的方法。 至少第一种在离子源中离子化。 第一种离子和/或第一种结合形成分子离子。 这些分子离子可以被输送到可以是电弧室或扩散室的第二室，并被提取。 分子离子可以具有比第一种或第一种离子更大的原子质量。 第二种也可以用第一种离子化形成分子离子。 在一种情况下，第一种和第二种都是分子。
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公开(公告)号：US08742373B2
公开(公告)日：2014-06-03
申请号：US12965419
申请日：2010-12-10
IPC分类号： H01J37/32
CPC分类号： H01J37/32412 , C23C14/06 , C23C14/345 , C23C14/3485 , C23C14/48 , C23C14/54 , H01J37/08 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32449 , H01J37/32623 , H01J2237/08 , H01J2237/0815 , H01J2237/0827 , H01J2237/31701
摘要： A plasma is formed from one or more gases in a plasma chamber using at least a first power and a second power. A first ion species is generated at said first power and a second ion species is generated at said second power. In one embodiment, the first ion species and second ion species are implanted into a workpiece at two different energies using at least a first bias voltage and a second bias voltage. This may enable implantation to two different depths. These ion species may be atomic ions or molecular ions. The molecular ions may be larger than the gases used to form the plasma.
摘要翻译： 使用至少第一功率和第二功率在等离子体室中的一种或多种气体形成等离子体。 在所述第一功率下产生第一离子种类，并且在所述第二功率下产生第二离子种类。 在一个实施例中，使用至少第一偏置电压和第二偏置电压将第一离子种类和第二离子种类以两种不同的能量注入到工件中。 这可以使植入到两个不同的深度。 这些离子种类可以是原子离子或分子离子。 分子离子可能大于用于形成等离子体的气体。
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公开(公告)号：US20110253902A1
公开(公告)日：2011-10-20
申请号：US12763652
申请日：2010-04-20
IPC分类号： H01J27/02
CPC分类号： H01J37/3171 , H01J37/08
摘要： An apparatus that generates molecular ions and methods to generate molecular ions are disclosed. At least a first species is ionized in an ion source. The first species ions and/or first species combine to form molecular ions. These molecular ions may be transported to a second chamber, which may be an arc chamber or diffusion chamber, and are extracted. The molecular ions may have a larger atomic mass than the first species or first species ions. A second species also may be ionized with the first species to form molecular ions. In one instance, the first and second species are both molecules.
摘要翻译： 公开了一种产生分子离子的装置和产生分子离子的方法。 至少第一种在离子源中离子化。 第一种离子和/或第一种结合形成分子离子。 这些分子离子可以被输送到可以是电弧室或扩散室的第二室，并被提取。 分子离子可以具有比第一种或第一种离子更大的原子质量。 第二种也可以用第一种离子化形成分子离子。 在一种情况下，第一种和第二种都是分子。
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8.发明申请公开(公告)号：US20070164229A1
公开(公告)日：2007-07-19
申请号：US11413570
申请日：2006-04-28
申请人： Svetlana Radovanov , Anthony Renau , James Buff
发明人： Svetlana Radovanov , Anthony Renau , James Buff
IPC分类号： H01J3/14
CPC分类号： H01J37/12 , H01J37/3171
摘要： A technique for providing a segmented electrostatic lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as an electrostatic lens for use in an ion implanter. The lens may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the electrostatic lens through the entrance electrode. The lens may also comprise an exit electrode biased at a second voltage potential, wherein the ion beam exits the electrostatic lens through the exit electrode. The lens may further comprise a suppression electrode located between the entrance electrode and the exit electrode, the suppression electrode comprising a plurality of segments that are independently biased to manipulate an energy and a shape of the ion beam.
摘要翻译： 公开了一种在离子注入机中提供分段静电透镜的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于离子注入机的静电透镜。 透镜可以包括偏置在第一电压电位的入口电极，其中离子束通过入口电极进入静电透镜。 透镜还可以包括偏压在第二电压电位的出射电极，其中离子束通过出射电极离开静电透镜。 透镜还可以包括位于入射电极和出射电极之间的抑制电极，所述抑制电极包括多个段，所述多个段被独立地偏置以操纵离子束的能量和形状。
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公开(公告)号：US20070108390A1
公开(公告)日：2007-05-17
申请号：US11536992
申请日：2006-09-29
申请人： Svetlana Radovanov , Peter Kellerman , Victor Benveniste , Robert Lindberg , Kenneth Purser , Tyler Rockwell , James Buff , Anthony Renau
发明人： Svetlana Radovanov , Peter Kellerman , Victor Benveniste , Robert Lindberg , Kenneth Purser , Tyler Rockwell , James Buff , Anthony Renau
IPC分类号： H01J37/12
CPC分类号： H01J37/12 , H01J37/3007 , H01J37/3171 , H01J2237/083 , H01J2237/121
摘要： A technique for shaping a ribbon-shaped ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for shaping a ribbon-shaped ion beam. The apparatus may comprise an electrostatic lens having a substantially rectangular aperture for a ribbon-shaped ion beam to pass through, wherein a plurality of focusing elements are positioned along short edges of the aperture, and wherein each focusing element is separately biased and oriented to shape the ribbon-shaped ion beam.
摘要翻译： 公开了一种用于成形带状离子束的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于成形带状离子束的装置。 该设备可以包括具有用于带状离子束通过的基本上矩形的孔的静电透镜，其中多个聚焦元件沿着孔的短边缘定位，并且其中每个聚焦元件被单独偏置并定向成形 带状离子束。
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公开(公告)号：US08877654B2
公开(公告)日：2014-11-04
申请号：US12760847
申请日：2010-04-15
IPC分类号： H01L21/31
CPC分类号： H01L21/02274 , H01L21/2236 , H01L21/3065 , H01L29/66803
摘要： A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.
摘要翻译： 提供等离子体处理方法。 等离子体处理方法包括使用脉冲功率等离子体的余辉进行保形加工。 在余辉期间，等电场线跟随工件表面的轮廓，允许以各种入射角度，特别是非平面表面引入离子。 在本公开的另一方面，压片可在等离子体余辉期间被正向偏压以将负离子吸引到工件。 可以执行各种适形处理步骤，例如植入，蚀刻和沉积。
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