公开(公告)号：US09450147B2

公开(公告)日：2016-09-20

申请号：US14194509

申请日：2014-02-28

Applicant: LuxVue Technology Corporation

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC: H01L33/14 ,  H01L27/01 ,  H01L33/06 ,  H01L23/00 ,  G09G3/32 ,  H01L25/075 ,  H01L27/15 ,  H01L33/16 ,  H01L33/20 ,  H01L33/00

CPC classification number: H01L33/145 ,  G09G3/32 ,  H01L24/75 ,  H01L24/95 ,  H01L25/0753 ,  H01L27/016 ,  H01L27/156 ,  H01L33/0016 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/14 ,  H01L33/16 ,  H01L33/20 ,  H01L33/30 ,  H01L33/42 ,  H01L2224/75305 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/82203 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

Abstract translation: 公开了用于形成LED器件阵列的方法和结构。 根据本发明的实施例的LED器件可以包括内部限制的电流注入区域，以减少由于边缘效应引起的非辐射复合。 限制电流的几种方式可以包括电流分布层的蚀刻去除，电流分布层和活性层的蚀刻去除，随后的台面再生长，通过离子注入或扩散的分离，量子阱混合和氧化物隔离。

公开(公告)号：US20150187991A1

公开(公告)日：2015-07-02

申请号：US14194509

申请日：2014-02-28

Applicant: LuxVue Technology Corporation

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC: H01L33/14 ,  H01L33/06 ,  H01L27/01

CPC classification number: H01L33/145 ,  G09G3/32 ,  H01L24/75 ,  H01L24/95 ,  H01L25/0753 ,  H01L27/016 ,  H01L27/156 ,  H01L33/0016 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/14 ,  H01L33/16 ,  H01L33/20 ,  H01L33/30 ,  H01L33/42 ,  H01L2224/75305 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/82203 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

Abstract translation: 公开了用于形成LED器件阵列的方法和结构。 根据本发明的实施例的LED器件可以包括内部限制的电流注入区域，以减少由于边缘效应引起的非辐射复合。 限制电流的几种方式可以包括电流分布层的蚀刻去除，电流分布层和活性层的蚀刻去除，随后的台面再生长，通过离子注入或扩散的分离，量子阱混合和氧化物隔离。