公开(公告)号：US20120074532A1

公开(公告)日：2012-03-29

申请号：US13084879

申请日：2011-04-12

申请人： MENG-KAI SHIH ,  CHANG-CHI LEE

发明人： MENG-KAI SHIH ,  CHANG-CHI LEE

IPC分类号： H01L23/58 ,  H01L23/52 ,  H01L23/48

CPC分类号： H01L23/3171 ,  H01L21/563 ,  H01L23/49894 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L2224/0401 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13027 ,  H01L2224/13076 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13171 ,  H01L2224/14104 ,  H01L2224/16105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/73204 ,  H01L2224/8114 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012

摘要： A semiconductor package includes a substrate and a semiconductor device. The semiconductor device includes a body having a center, a layer disposed adjacent to the body, and a plurality of conductive pillars configured to electrically connect the semiconductor device to the substrate. The layer defines a plurality of openings. Each of the plurality of conductive pillars extends at least partially through a corresponding one of the plurality of openings. An offset between a first central axis of the each of the plurality of conductive pillars and a second central axis of the corresponding one of the plurality of openings varies with distance between the first central axis and the center of the body. The second central axis of the corresponding one of the plurality of openings is disposed between the first central axis of the each of the plurality of conductive pillars and the center of the body.

摘要翻译： 半导体封装包括衬底和半导体器件。 半导体器件包括具有中心的主体，邻近本体设置的层以及被配置为将半导体器件电连接到衬底的多个导电柱。 该层限定多个开口。 多个导电柱中的每一个至少部分地延伸穿过多个开口中的对应的一个。 多个导电柱中的每一个的第一中心轴线和多个开口中的相应一个开口的第二中心轴线之间的偏移随第一中心轴线和主体中心之间的距离而变化。 多个开口中的相应一个开口的第二中心轴设置在多个导电柱中的每一个的第一中心轴线和主体的中心之间。