公开(公告)号：US11424256B2

公开(公告)日：2022-08-23

申请号：US16662945

申请日：2019-10-24

Applicant: Micron Technology, Inc.

Inventor： Deepak Thimmegowda ,  Andrew R. Bicksler ,  Roland Awusie

IPC: H01L27/11524 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11556 ,  H01L29/423 ,  H01L29/78 ,  H01L29/49 ,  H01L21/28 ,  H01L29/16 ,  H01L29/66 ,  H01L21/283 ,  H01L29/10 ,  H01L29/788 ,  H01L29/792

Abstract: Some embodiments include a transistor having a first electrically conductive gate portion along a first segment of a channel region and a second electrically conductive gate portion along a second segment of the channel region. The second electrically conductive gate portion is a different composition than the first electrically conductive gate portion. Some embodiments include a method of forming a semiconductor construction. First semiconductor material and metal-containing material are formed over a NAND string. An opening is formed through the metal-containing material and the first semiconductor material, and is lined with gate dielectric. Second semiconductor material is provided within the opening to form a channel region of a transistor. The transistor is a select device electrically coupled to the NAND string.

公开(公告)号：US20170162589A1

公开(公告)日：2017-06-08

申请号：US15439282

申请日：2017-02-22

Applicant: Micron Technology, Inc.

Inventor： Deepak Thimmegowda ,  Andrew R. Bicksler ,  Roland Awusie

IPC: H01L27/11524 ,  H01L29/788 ,  H01L29/10 ,  H01L27/11556 ,  H01L29/78 ,  H01L27/11582 ,  H01L27/1157 ,  H01L29/792 ,  H01L29/66

CPC classification number: H01L27/11524 ,  H01L21/28035 ,  H01L21/28097 ,  H01L21/283 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/4925 ,  H01L29/4983 ,  H01L29/6653 ,  H01L29/66666 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/7828 ,  H01L29/7889 ,  H01L29/7926

Abstract: Some embodiments include a transistor having a first electrically conductive gate portion along a first segment of a channel region and a second electrically conductive gate portion along a second segment of the channel region. The second electrically conductive gate portion is a different composition than the first electrically conductive gate portion. Some embodiments include a method of forming a semiconductor construction. First semiconductor material and metal-containing material are formed over a NAND string. An opening is formed through the metal-containing material and the first semiconductor material, and is lined with gate dielectric. Second semiconductor material is provided within the opening to form a channel region of a transistor. The transistor is a select device electrically coupled to the NAND string.

公开(公告)号：US09613978B2

公开(公告)日：2017-04-04

申请号：US14949778

申请日：2015-11-23

Applicant: Micron Technology, Inc.

Inventor： Deepak Thimmegowda ,  Andrew R. Bicksler ,  Roland Awusie

IPC: H01L21/283 ,  H01L27/115 ,  H01L29/10 ,  H01L29/49 ,  H01L29/788 ,  H01L29/66 ,  H01L29/792 ,  H01L27/11582 ,  H01L29/78 ,  H01L27/1157 ,  H01L21/28 ,  H01L29/16 ,  H01L27/11524 ,  H01L27/11556

CPC classification number: H01L27/11524 ,  H01L21/28035 ,  H01L21/28097 ,  H01L21/283 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/4925 ,  H01L29/4983 ,  H01L29/6653 ,  H01L29/66666 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/7828 ,  H01L29/7889 ,  H01L29/7926

Abstract: Some embodiments include a transistor having a first electrically conductive gate portion along a first segment of a channel region and a second electrically conductive gate portion along a second segment of the channel region. The second electrically conductive gate portion is a different composition than the first electrically conductive gate portion. Some embodiments include a method of forming a semiconductor construction. First semiconductor material and metal-containing material are formed over a NAND string. An opening is formed through the metal-containing material and the first semiconductor material, and is lined with gate dielectric. Second semiconductor material is provided within the opening to form a channel region of a transistor. The transistor is a select device electrically coupled to the NAND string.

公开(公告)号：US08853769B2

公开(公告)日：2014-10-07

申请号：US13738147

申请日：2013-01-10

Applicant: Micron Technology, Inc.

Inventor： Deepak Thimmegowda ,  Andrew R. Bicksler ,  Roland Awusie

IPC: H01L29/792 ,  H01L21/3205 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L27/11524 ,  H01L21/28035 ,  H01L21/28097 ,  H01L21/283 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/4925 ,  H01L29/4983 ,  H01L29/6653 ,  H01L29/66666 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/7828 ,  H01L29/7889 ,  H01L29/7926

Abstract: Some embodiments include a transistor having a first electrically conductive gate portion along a first segment of a channel region and a second electrically conductive gate portion along a second segment of the channel region. The second electrically conductive gate portion is a different composition than the first electrically conductive gate portion. Some embodiments include a method of forming a semiconductor construction. First semiconductor material and metal-containing material are formed over a NAND string. An opening is formed through the metal-containing material and the first semiconductor material, and is lined with gate dielectric. Second semiconductor material is provided within the opening to form a channel region of a transistor. The transistor is a select device electrically coupled to the NAND string.

Abstract translation: 一些实施例包括具有沿通道区域的第一段的第一导电栅极部分和沿着沟道区域的第二部分的第二导电栅极部分的晶体管。 第二导电栅极部分是与第一导电栅极部分不同的组成。 一些实施例包括形成半导体结构的方法。 第一半导体材料和含金属材料形成在NAND串上。 通过含金属材料和第一半导体材料形成开口，并且衬有栅极电介质。 第二半导体材料设置在开口内以形成晶体管的沟道区。 晶体管是电耦合到NAND串的选择器件。

公开(公告)号：US20200058662A1

公开(公告)日：2020-02-20

申请号：US16662945

申请日：2019-10-24

Applicant: Micron Technology, Inc.

Inventor： Deepak Thimmegowda ,  Andrew R. Bicksler ,  Roland Awusie

IPC: H01L27/11524 ,  H01L29/792 ,  H01L29/788 ,  H01L29/66 ,  H01L29/10 ,  H01L27/11556 ,  H01L21/283 ,  H01L29/49 ,  H01L29/16 ,  H01L21/28 ,  H01L27/11582 ,  H01L27/1157 ,  H01L29/78

Abstract: Some embodiments include a transistor having a first electrically conductive gate portion along a first segment of a channel region and a second electrically conductive gate portion along a second segment of the channel region. The second electrically conductive gate portion is a different composition than the first electrically conductive gate portion. Some embodiments include a method of forming a semiconductor construction. First semiconductor material and metal-containing material are formed over a NAND string. An opening is formed through the metal-containing material and the first semiconductor material, and is lined with gate dielectric. Second semiconductor material is provided within the opening to form a channel region of a transistor. The transistor is a select device electrically coupled to the NAND string.

公开(公告)号：US20160079274A1

公开(公告)日：2016-03-17

申请号：US14949778

申请日：2015-11-23

Applicant: Micron Technology, Inc.

Inventor： Deepak Thimmegowda ,  Andrew R. Bicksler ,  Roland Awusie

IPC: H01L27/115 ,  H01L29/10 ,  H01L29/788 ,  H01L29/66 ,  H01L29/792 ,  H01L29/49 ,  H01L21/283

CPC classification number: H01L27/11524 ,  H01L21/28035 ,  H01L21/28097 ,  H01L21/283 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/4925 ,  H01L29/4983 ,  H01L29/6653 ,  H01L29/66666 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/7828 ,  H01L29/7889 ,  H01L29/7926

Abstract: Some embodiments include a transistor having a first electrically conductive gate portion along a first segment of a channel region and a second electrically conductive gate portion along a second segment of the channel region. The second electrically conductive gate portion is a different composition than the first electrically conductive gate portion. Some embodiments include a method of forming a semiconductor construction. First semiconductor material and metal-containing material are formed over a NAND string. An opening is formed through the metal-containing material and the first semiconductor material, and is lined with gate dielectric. Second semiconductor material is provided within the opening to form a channel region of a transistor. The transistor is a select device electrically coupled to the NAND string.

公开(公告)号：US09219132B2

公开(公告)日：2015-12-22

申请号：US14491830

申请日：2014-09-19

Applicant: Micron Technology, Inc.

Inventor： Deepak Thimmegowda ,  Andrew R. Bicksler ,  Roland Awusie

IPC: H01L21/3205 ,  H01L21/44 ,  H01L21/30 ,  H01L29/66 ,  H01L29/78 ,  H01L21/28 ,  H01L29/16 ,  H01L29/49 ,  H01L27/115

CPC classification number: H01L27/11524 ,  H01L21/28035 ,  H01L21/28097 ,  H01L21/283 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/4925 ,  H01L29/4983 ,  H01L29/6653 ,  H01L29/66666 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/7828 ,  H01L29/7889 ,  H01L29/7926

Abstract: Some embodiments include a transistor having a first electrically conductive gate portion along a first segment of a channel region and a second electrically conductive gate portion along a second segment of the channel region. The second electrically conductive gate portion is a different composition than the first electrically conductive gate portion. Some embodiments include a method of forming a semiconductor construction. First semiconductor material and metal-containing material are formed over a NAND string. An opening is formed through the metal-containing material and the first semiconductor material, and is lined with gate dielectric. Second semiconductor material is provided within the opening to form a channel region of a transistor. The transistor is a select device electrically coupled to the NAND string.

Abstract translation: 一些实施例包括具有沿通道区域的第一段的第一导电栅极部分和沿着沟道区域的第二部分的第二导电栅极部分的晶体管。 第二导电栅极部分是与第一导电栅极部分不同的组成。 一些实施例包括形成半导体结构的方法。 第一半导体材料和含金属材料形成在NAND串上。 通过含金属材料和第一半导体材料形成开口，并且衬有栅极电介质。 第二半导体材料设置在开口内以形成晶体管的沟道区。 晶体管是电耦合到NAND串的选择器件。

公开(公告)号：US20150044834A1

公开(公告)日：2015-02-12

申请号：US14491830

申请日：2014-09-19

Applicant: Micron Technology, Inc.

Inventor： Deepak Thimmegowda ,  Andrew R. Bicksler ,  Roland Awusie

IPC: H01L29/66 ,  H01L29/49 ,  H01L21/28 ,  H01L29/16

CPC classification number: H01L27/11524 ,  H01L21/28035 ,  H01L21/28097 ,  H01L21/283 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/4925 ,  H01L29/4983 ,  H01L29/6653 ,  H01L29/66666 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/7828 ,  H01L29/7889 ,  H01L29/7926

Abstract: Some embodiments include a transistor having a first electrically conductive gate portion along a first segment of a channel region and a second electrically conductive gate portion along a second segment of the channel region. The second electrically conductive gate portion is a different composition than the first electrically conductive gate portion. Some embodiments include a method of forming a semiconductor construction. First semiconductor material and metal-containing material are formed over a NAND string. An opening is formed through the metal-containing material and the first semiconductor material, and is lined with gate dielectric. Second semiconductor material is provided within the opening to form a channel region of a transistor. The transistor is a select device electrically coupled to the NAND string.

Abstract translation: 一些实施例包括具有沿通道区域的第一段的第一导电栅极部分和沿着沟道区域的第二部分的第二导电栅极部分的晶体管。 第二导电栅极部分是与第一导电栅极部分不同的组成。 一些实施例包括形成半导体结构的方法。 第一半导体材料和含金属材料形成在NAND串上。 通过含金属材料和第一半导体材料形成开口，并且衬有栅极电介质。 第二半导体材料设置在开口内以形成晶体管的沟道区。 晶体管是电耦合到NAND串的选择器件。

公开(公告)号：US20140191340A1

公开(公告)日：2014-07-10

申请号：US13738147

申请日：2013-01-10

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Deepak Thimmegowda ,  Andrew R. Bicksler ,  Roland Awusie

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L27/11524 ,  H01L21/28035 ,  H01L21/28097 ,  H01L21/283 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/4925 ,  H01L29/4983 ,  H01L29/6653 ,  H01L29/66666 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/7828 ,  H01L29/7889 ,  H01L29/7926

Abstract: Some embodiments include a transistor having a first electrically conductive gate portion along a first segment of a channel region and a second electrically conductive gate portion along a second segment of the channel region. The second electrically conductive gate portion is a different composition than the first electrically conductive gate portion. Some embodiments include a method of forming a semiconductor construction. First semiconductor material and metal-containing material are formed over a NAND string. An opening is formed through the metal-containing material and the first semiconductor material, and is lined with gate dielectric. Second semiconductor material is provided within the opening to form a channel region of a transistor. The transistor is a select device electrically coupled to the NAND string.

Abstract translation: 一些实施例包括具有沿通道区域的第一段的第一导电栅极部分和沿着沟道区域的第二部分的第二导电栅极部分的晶体管。 第二导电栅极部分是与第一导电栅极部分不同的组成。 一些实施例包括形成半导体结构的方法。 第一半导体材料和含金属材料形成在NAND串上。 通过含金属材料和第一半导体材料形成开口，并且衬有栅极电介质。 第二半导体材料设置在开口内以形成晶体管的沟道区。 晶体管是电耦合到NAND串的选择器件。