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    High efficiency method for performing a chemical vapordeposition utilizing a nonvolatile precursor
    4.
    发明申请
    High efficiency method for performing a chemical vapordeposition utilizing a nonvolatile precursor 失效
    利用非挥发性前体进行化学气相沉积的高效率方法

    公开(公告)号：US20020192376A1

    公开(公告)日：2002-12-19

    申请号：US10213030

    申请日：2002-08-05

    Applicant: Micron Technology, Inc.

    Inventor： Donald L. Westmoreland ,  Gurtej S. Sandhu

    IPC: C23C016/00

    CPC classification number: C23C16/4485

    Abstract: A method directed to the use of a nonvolatile precursor, either a solid or liquid precursor, suitable for CVD, including liquid source CVD (LSCVD). Using the method of the invention the nonvolatile precursor is dissolved in a solvent. Choice of solvent is typically an inorganic compound that has a moderate to high vapor pressure at room temperature, which can be liquified by combination of pressure and cooling. The solution is then transported at an elevated pressure and/or a reduced temperature to the CVD chamber. The solution evaporates at a higher temperature and a lower pressure upon entry to the CVD chamber, and the nonvolatile precursor, in its gaseous state, along with a gas reactant, produces a product which is deposited on a semiconductor wafer. In LSCVD the liquid enters the chamber, contacts the wafer, evaporates, produces a product which is deposited as a thin film.

    Abstract translation: 涉及使用非挥发性前体，即适用于CVD的固体或液体前体，包括液体源CVD（LSCVD）的方法。 使用本发明的方法，将非挥发性前体溶解在溶剂中。 溶剂的选择通常是在室温下具有中等至高蒸气压的无机化合物，其可以通过压力和冷却的组合而液化。 然后将溶液在升高的压力和/或降低的温度下运送到CVD室。 该溶液在进入CVD室时在更高的温度和更低的压力下蒸发，并且处于其气态的非挥发性前体与气体反应物一起产生沉积在半导体晶片上的产物。 在LSCVD中，液体进入室，接触晶片，蒸发，产生沉积成薄膜的产品。

    Film on a surface of a mold used during semiconductor device fabrication
    5.
    发明申请
    Film on a surface of a mold used during semiconductor device fabrication 有权

    公开(公告)号：US20020185584A1

    公开(公告)日：2002-12-12

    申请号：US10210633

    申请日：2002-07-31

    Applicant: Micron Technology, Inc.

    Inventor： Donald L. Westmoreland

    IPC: B29C033/56

    CPC classification number: G03F7/0002 ,  B29C33/56 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/565 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A film is provided on a mold used during semiconductor device fabrication through surface modifications to the mold to provide non-stick characteristics and a mold surface that is resistant to abrasion or wear. Such surface modifications are particularly useful in a mold having a quartz planar surface adapted to contact a photocurable polymer material applied to a semiconductor wafer surface during a fabrication process. The planar surface of the mold is capable of allowing transmission of ultraviolet light therethrough to cure the polymer material. A non-stick film is formed on the planar surface of the mold by a coating or deposition process in order to modify the mold surface. The non-stick film can be formed of a fluoroalkylsilane compound, or a hard material such as diamond or diamond-like carbon. The non-stick film of diamond or diamond-like carbon provides protection against abrasion or wear on the planar surface of the mold. In addition, the non-stick film of diamond or diamond-like carbon can be fluorine-terminated, or can have a coating layer of a fluoroalkylsilane compound formed thereover.

    Plasmaless dry contact cleaning method using interhalogen compounds
    8.
    发明申请
    Plasmaless dry contact cleaning method using interhalogen compounds 失效
    使用间卤化合物的无等离子体干接触清洗方法

    公开(公告)号：US20030087523A1

    公开(公告)日：2003-05-08

    申请号：US10309467

    申请日：2002-12-04

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Gurtej S. Sandhu ,  Donald L. Westmoreland

    IPC: H01L021/302 ,  H01L021/461

    CPC classification number: H01L21/02063 ,  H01L21/28556 ,  H01L21/31116 ,  H01L21/76814 ,  Y10S438/906

    Abstract: A method of removing an oxide layer from an article. The article may be located in a reaction chamber into which an interhalogen compound reactive with the oxide layer is introduced. A temperature of the reaction chamber may be modified so as to remove the oxide layer. The interhalogen compound may form volatile by-product gases upon reaction with the oxide layer. Unreacted interhalogen compound and volatile by-product gases may then be removed from the reaction chamber.

    Abstract translation: 从制品中去除氧化物层的方法。 该制品可以位于反应室中，与该氧化物层反应的卤间化合物被引入该反应室中。 可以改变反应室的温度以除去氧化物层。 当与氧化物层反应时，卤间化合物可以形成挥发性副产物气体。 然后可以从反应室中除去未反应的卤间化合物和挥发性副产物气体。

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