公开(公告)号：US20130292854A1

公开(公告)日：2013-11-07

申请号：US13934536

申请日：2013-07-03

Applicant: Micron Technology, Inc.

Inventor： Edmund Koon Tian Lua ,  See Hiong Leow ,  Choon Kuan Lee

IPC: H01L21/50 ,  H01L23/498

CPC classification number: H01L23/16 ,  H01L21/50 ,  H01L23/498 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48477 ,  H01L2224/49174 ,  H01L2224/4942 ,  H01L2224/49421 ,  H01L2224/73265 ,  H01L2224/83138 ,  H01L2224/85051 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/207 ,  H01L2224/45099

Abstract: Stacked microelectronic devices and methods of manufacturing stacked microelectronic devices are disclosed herein. In one embodiment, a method of manufacturing a microelectronic device includes forming a plurality of electrically isolated, multi-tiered metal spacers on a front side of a first microelectronic die, and attaching a back-side surface of a second microelectronic die to individual metal spacers. In another embodiment, the method of manufacturing the microelectronic device may further include forming top-tier spacer elements on front-side wire bonds of the first die.

公开(公告)号：US20140346683A1

公开(公告)日：2014-11-27

申请号：US14457000

申请日：2014-08-11

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Edmund Koon Tian Lua ,  See Hiong Leow ,  Choon Kuan Lee

IPC: H01L23/16 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L23/16 ,  H01L21/50 ,  H01L23/498 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48477 ,  H01L2224/49174 ,  H01L2224/4942 ,  H01L2224/49421 ,  H01L2224/73265 ,  H01L2224/83138 ,  H01L2224/85051 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/207 ,  H01L2224/45099

Abstract: Stacked microelectronic devices and methods of manufacturing stacked microelectronic devices are disclosed herein. In one embodiment, a method of manufacturing a microelectronic device includes forming a plurality of electrically isolated, multi-tiered metal spacers on a front side of a first microelectronic die, and attaching a back-side surface of a second microelectronic die to individual metal spacers. In another embodiment, the method of manufacturing the microelectronic device may further include forming top-tier spacer elements on front-side wire bonds of the first die.

Abstract translation: 堆叠的微电子器件和制造堆叠的微电子器件的方法在本文中公开。 在一个实施例中，一种制造微电子器件的方法包括在第一微电子管芯的正面上形成多个电绝缘的多层金属间隔物，并将第二微电子管芯的背面附接到各个金属间隔件 。 在另一个实施例中，制造微电子器件的方法还可以包括在第一管芯的前侧引线接合处形成顶层隔离元件。

公开(公告)号：US08803307B2

公开(公告)日：2014-08-12

申请号：US13934536

申请日：2013-07-03

Applicant: Micron Technology, Inc.

Inventor： Edmund Koon Tian Lua ,  See Hiong Leow ,  Choon Kuan Lee

IPC: H01L23/02

CPC classification number: H01L23/16 ,  H01L21/50 ,  H01L23/498 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48477 ,  H01L2224/49174 ,  H01L2224/4942 ,  H01L2224/49421 ,  H01L2224/73265 ,  H01L2224/83138 ,  H01L2224/85051 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/207 ,  H01L2224/45099

Abstract: Stacked microelectronic devices and methods of manufacturing stacked microelectronic devices are disclosed herein. In one embodiment, a method of manufacturing a microelectronic device includes forming a plurality of electrically isolated, multi-tiered metal spacers on a front side of a first microelectronic die, and attaching a back-side surface of a second microelectronic die to individual metal spacers. In another embodiment, the method of manufacturing the microelectronic device may further include forming top-tier spacer elements on front-side wire bonds of the first die.

Abstract translation: 堆叠的微电子器件和制造堆叠的微电子器件的方法在本文中公开。 在一个实施例中，一种制造微电子器件的方法包括在第一微电子管芯的正面上形成多个电绝缘的多层金属间隔物，并将第二微电子管芯的背面附接到各个金属间隔件 。 在另一个实施例中，制造微电子器件的方法还可以包括在第一管芯的前侧引线接合处形成顶层隔离元件。

公开(公告)号：US09147623B2

公开(公告)日：2015-09-29

申请号：US14457000

申请日：2014-08-11

Applicant: Micron Technology, Inc.

Inventor： Edmund Koon Tian Lua ,  See Hiong Leow ,  Choon Kuan Lee

IPC: H01L23/16 ,  H01L23/00 ,  H01L25/065 ,  H01L21/50 ,  H01L23/498 ,  H01L25/00

CPC classification number: H01L23/16 ,  H01L21/50 ,  H01L23/498 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48477 ,  H01L2224/49174 ,  H01L2224/4942 ,  H01L2224/49421 ,  H01L2224/73265 ,  H01L2224/83138 ,  H01L2224/85051 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/207 ,  H01L2224/45099

Abstract: Stacked microelectronic devices and methods of manufacturing stacked microelectronic devices are disclosed herein. In one embodiment, a method of manufacturing a microelectronic device includes forming a plurality of electrically isolated, multi-tiered metal spacers on a front side of a first microelectronic die, and attaching a back-side surface of a second microelectronic die to individual metal spacers. In another embodiment, the method of manufacturing the microelectronic device may further include forming top-tier spacer elements on front-side wire bonds of the first die.

Abstract translation: 堆叠的微电子器件和制造堆叠的微电子器件的方法在本文中公开。 在一个实施例中，一种制造微电子器件的方法包括在第一微电子管芯的正面上形成多个电绝缘的多层金属间隔物，并将第二微电子管芯的背面附接到各个金属间隔件 。 在另一个实施例中，制造微电子器件的方法还可以包括在第一管芯的前侧引线接合处形成顶层隔离元件。