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公开(公告)号:US20230089479A1
公开(公告)日:2023-03-23
申请号:US17993194
申请日:2022-11-23
Applicant: Micron Technology, Inc.
Inventor: Liang Yu , Jeremy Wayne Butterfield , Jeremy Binfet
IPC: G11C11/4074 , G11C11/4076 , G11C5/14 , G11C5/06 , G11C11/409
Abstract: A variety of applications can include multiple memory die packages configured to engage in peak power management (PPM) across the multiple packages of memory dies. A communication line coupled to each memory die in the multiple memory die packages can be used to facilitate the PPM. A global management die can start a communication sequence among the multiple memory die packages to share a current budget across the multiple memory die packages by driving a signal on the communication line. Local management dies can use the received signal having clock pulses driven by the global management die on the communication line to engage in the PPM. To engage in global PPM, each memory die can be structured, to be selected as the global management die or a local management die, with one or more controllers to interface with the multiple memory die packages and to handle current budget limits.
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公开(公告)号:US20230063057A1
公开(公告)日:2023-03-02
申请号:US17458835
申请日:2021-08-27
Applicant: Micron Technology, Inc.
Inventor: Eric N. Lee , Robert W. Strong , William Akin , Jeremy Binfet
IPC: G06F3/06
Abstract: A method includes detecting an occurrence of an event associated with a memory sub-system comprising blocks of non-volatile memory cells. The method further includes responsive to detecting the occurrence of the event, providing signaling to disable at least a portion of the memory sub-system, an interface coupled to the memory sub-system, or both.
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公开(公告)号:US20230044883A1
公开(公告)日:2023-02-09
申请号:US17971346
申请日:2022-10-21
Applicant: Micron Technology, Inc.
Inventor: Kishore K. Muchherla , Niccolo' Righetti , Jeffrey S. McNeil, JR. , Akira Goda , Todd A. Marquart , Mark A. Helm , Gil Golov , Jeremy Binfet , Carmine Miccoli , Giuseppina Puzzilli
Abstract: A memory component comprises a cyclic buffer partition portion and a snapshot partition portion. In response to receiving a signal that a trigger event has occurred, a processing device included in the memory component performs an error correction operation on a portion of data stored in the cyclic buffer partition portion, copies the data stored in the cyclic buffer partition portion to the snapshot partition portion in response to the error correction operation being successful, and sends the data stored in the cyclic buffer partition portion to a processing device operatively coupled to the memory component in response to the error correction operation not being successful.
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公开(公告)号:US20230017388A1
公开(公告)日:2023-01-19
申请号:US17873850
申请日:2022-07-26
Applicant: Micron Technology, Inc.
Inventor: Qisong Lin , Shuai Xu , Jonathan S. Parry , Jeremy Binfet , Micheie Piccardi , Qing Liang
IPC: G11C16/30 , G06F3/06 , G06F12/0875 , G11C16/10
Abstract: Methods, systems, and devices for power architecture for non-volatile memory are described. A memory device may be configured to operate in a first mode and a second mode (e.g., a low power mode). When operating in the first mode, a voltage may be supplied from a power source (e.g., a power management integrated circuit) to a memory array and one or more associated components via a regulator. When the memory device transitions to operate in the second mode, some of the components supplied from the power source may be powered by a charge pump. Control information associated with the memory array may be stored to the one or more components (e.g., to a cache) that are powered by a charge pump.
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公开(公告)号:US20220350517A1
公开(公告)日:2022-11-03
申请号:US17846462
申请日:2022-06-22
Applicant: Micron Technology, Inc.
Inventor: Kishore K. Muchherla , Niccolo' Righetti , Jeffrey S. McNeil, JR. , Akira Goda , Todd A. Marquart , Mark A. Helm , Gil Golov , Jeremy Binfet , Carmine Miccoli , Giuseppina Puzzilli
IPC: G06F3/06
Abstract: A system includes a processing device and trigger circuitry to signal the processing device responsive, at least in part, based on a determination that a trigger event has occurred. The system can further include a memory device communicatively coupled to the processing device. The memory device can include a cyclic buffer partition portion having a first endurance characteristic and a first reliability characteristic associated therewith. The memory device can further include a snapshot partition portion coupled to the cyclic buffer partition portion via hold-up capacitors. The snapshot partition portion can have a second endurance characteristic and a second reliability characteristic associated therewith. The processing device can perform operations including writing received data sequentially to the cyclic buffer partition portion and writing, based at least in part on the determination that the trigger event has occurred, data from the cyclic buffer partition portion to the snapshot partition portion.
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公开(公告)号:US11360700B2
公开(公告)日:2022-06-14
申请号:US16995645
申请日:2020-08-17
Applicant: Micron Technology, Inc.
Inventor: Kishore K. Muchherla , Niccolo' Righetti , Jeffrey S. McNeil, Jr. , Akira Goda , Todd A. Marquart , Mark A. Helm , Gil Golov , Jeremy Binfet , Carmine Miccoli , Giuseppina Puzzilli
Abstract: A system includes a processing device and a memory device communicatively coupled to the processing device. The memory device can include a cyclic buffer partition portion and a snapshot partition portion coupled to the cyclic buffer partition portion via hold-up capacitors. The snapshot partition portion can further include a first sub-partition portion having a first programming characteristic and a second sub-partition portion having a second programming characteristic. The processing device can write received data sequentially to the cycle buffer partition portion and write, based at least in part on a determination that a trigger event has occurred, data from the cyclic buffer partition portion to the first sub-partition portion or the second sub-partition portion, or both.
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公开(公告)号:US20210134373A1
公开(公告)日:2021-05-06
申请号:US17149048
申请日:2021-01-14
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Koji Sakui , Mark Hawes , Toru Tanzawa , Jeremy Binfet
IPC: G11C16/26 , G11C7/04 , G11C16/30 , G11C16/34 , G11C16/20 , H01L27/11519 , H01L27/11529 , H01L27/11556 , G11C16/04 , G11C16/08 , G11C16/14 , G11C16/32 , H01L27/115
Abstract: Apparatus might include an array of memory cells and a controller to perform access operations on the array of memory cells. The controller might be configured to establish a negative potential in a body of a memory cell of the array of memory cells, and initiate a sensing operation on the memory cell while the body of the memory cell has the negative potential. Apparatus might further include an array of memory cells, a timer, and a controller to perform access operations on the array of memory cells. The controller might be configured to advance the timer, and establish a negative potential in a body of a memory cell of the array of memory cells in response to a value of the timer having a desired value.
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公开(公告)号:US20190066771A1
公开(公告)日:2019-02-28
申请号:US15688645
申请日:2017-08-28
Applicant: Micron Technology, Inc.
Inventor: Jeremy Binfet , Mark Helm , William Filipiak , Mark Hawes
IPC: G11C11/419 , G11C16/24 , G11C7/10 , G11C7/22 , G11C7/08
Abstract: Systems, devices, and methods related to reset read are described. A reset read may be employed to initiate a transition of a portion of memory array into a first state or maintain a portion of memory array in a first state, such as a transient state. A reset read may provide a highly-parallelized, energy-efficient option to ensure memory blocks are in the first state. Various modes of reset read may be configured according to different input.
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公开(公告)号:US10049750B2
公开(公告)日:2018-08-14
申请号:US15350229
申请日:2016-11-14
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Koji Sakui , Mark Hawes , Toru Tanzawa , Jeremy Binfet
Abstract: Apparatus and methods of operating such apparatus include establishing a negative potential in a body of a memory cell prior to initiating a sensing operation on the memory cell, in response to a timer, or during an access operation of another memory cell.
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公开(公告)号:US12237018B2
公开(公告)日:2025-02-25
申请号:US18386919
申请日:2023-11-03
Applicant: Micron Technology, Inc.
Inventor: Eric N. Lee , Robert W. Strong , William Akin , Jeremy Binfet
Abstract: A method includes receiving signaling indicative of performance of a sanitization operation to a processing device coupled to a memory device and applying a sanitization voltage to a plurality of memory blocks of the memory device. The sanitization voltage can be greater than an erase voltage of the plurality of memory blocks.
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