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公开(公告)号：US20240071500A1
公开(公告)日：2024-02-29
申请号：US18234046
申请日：2023-08-15
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Jae Kyu Choi , Jin Yue , Kyubong Jung , Albert Fayrushin , Jae Young Ahn , Jun Kyu Yang
CPC classification number: G11C16/0483 , H10B41/10 , H10B41/27 , H10B41/35 , H10B43/10 , H10B43/27 , H10B43/35
Abstract: Memory array structures, and methods of their formation, might include a first memory cell having a first control gate and an adjacent first portion of a charge-blocking structure, a second memory cell having a second control gate and an adjacent second portion of the charge-blocking structure, and a first dielectric material between the first control gate and the second control gate, and adjacent to a third portion of the charge-blocking structure that is between the first and second portions of the charge-blocking structure. The third portion of the charge-blocking structure might include a second dielectric material and a third dielectric material different than the second dielectric material, and the first portion of the charge-blocking structure and the second portion of the charge-blocking structure might each include the third dielectric material and a fourth dielectric material different than the second dielectric material. Apparatus might include such memory array structures.
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Patent Agency Ranking
公开(公告)号：US20220262919A1
公开(公告)日：2022-08-18
申请号：US17176444
申请日：2021-02-16
Applicant: Micron Technology, Inc.
Inventor： Manzar Siddik , Terry H. Kim , Kyubong Jung
IPC: H01L29/51 , H01L27/11582 , H01L21/28 , H01L29/423
Abstract: A method of forming an electronic device comprising forming an initial dielectric material comprising silicon-hydrogen bonds. A deuterium source gas and an oxygen source gas are reacted to produce deuterium species, and the initial dielectric material is exposed to the deuterium species. Deuterium of the deuterium species is incorporated into the initial dielectric material to form a deuterium-containing dielectric material. Additional methods are also disclosed, as are electronic devices and systems comprising the deuterium-containing dielectric material.
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公开(公告)号：US20240268116A1
公开(公告)日：2024-08-08
申请号：US18403266
申请日：2024-01-03
Applicant: Micron Technology, Inc.
Inventor： Amiya Banerjee , Kranthi Kumar Vaidyula , Davide Resnati , Byeung Chul Kim , Kyubong Jung , Jameer Babasaheb Mulani , Jae Kyu Choi , Gianpietro Carnevale
Abstract: A method used in forming memory circuitry comprises forming a stack comprising vertically-alternating first tiers and second tiers. The first tiers are conductive and the second tiers are insulative at least in a finished-circuitry construction. Channel openings are formed through the first and second tiers. Charge-storage material is formed in the channel openings through the first and second tiers. The charge-storage material comprises a first charge-trap density. The first charge-trap density of the charge-storage material that is in the first tiers is increased as compared to the charge-storage material that is in the second tiers to a second charge-trap density. Channel material is formed in the channel openings through the first and second tiers and that is laterally-inward of the charge-storage material. Other embodiment, including structure, are disclosed.
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公开(公告)号：US12274060B2
公开(公告)日：2025-04-08
申请号：US17390415
申请日：2021-07-30
Applicant: Micron Technology, Inc.
Inventor： Kyubong Jung , Terry H. Kim
IPC: H10B43/27
Abstract: Some embodiments include an integrated assembly having a stack of alternating insulative levels and conductive levels. A pillar of channel material extends through the stack. Charge-storage-material-segments are adjacent to the conductive levels of the stack, and are between the channel material and the conductive levels. The charge-storage-material-segments contain one or more high-k oxides. At least a portion of each of the charge-storage-material-segments is vertically wider than the conductive levels. Some embodiments include methods of forming integrated assemblies.
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公开(公告)号：US12261210B2
公开(公告)日：2025-03-25
申请号：US17176444
申请日：2021-02-16
Applicant: Micron Technology, Inc.
Inventor： Manzar Siddik , Terry H. Kim , Kyubong Jung
IPC: H01L29/51 , H01L21/28 , H01L29/423 , H10B43/27
Abstract: A method of forming an electronic device comprising forming an initial dielectric material comprising silicon-hydrogen bonds. A deuterium source gas and an oxygen source gas are reacted to produce deuterium species, and the initial dielectric material is exposed to the deuterium species. Deuterium of the deuterium species is incorporated into the initial dielectric material to form a deuterium-containing dielectric material. Additional methods are also disclosed, as are electronic devices and systems comprising the deuterium-containing dielectric material.
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公开(公告)号：US20230037066A1
公开(公告)日：2023-02-02
申请号：US17390415
申请日：2021-07-30
Applicant: Micron Technology, Inc.
Inventor： Kyubong Jung , Terry H. Kim
IPC: H01L27/11582
Abstract: Some embodiments include an integrated assembly having a stack of alternating insulative levels and conductive levels. A pillar of channel material extends through the stack. Charge-storage-material-segments are adjacent to the conductive levels of the stack, and are between the channel material and the conductive levels. The charge-storage-material-segments contain one or more high-k oxides. At least a portion of each of the charge-storage-material-segments is vertically wider than the conductive levels. Some embodiments include methods of forming integrated assemblies.
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