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公开(公告)号：US11468949B2
公开(公告)日：2022-10-11
申请号：US17200607
申请日：2021-03-12
Applicant: Micron Technology, Inc.
Inventor： Pitamber Shukla , Giuseppina Puzzilli , Niccolo′ Righetti , Scott A. Stoller , Priya Venkataraman
Abstract: A method and system for temperature-dependent operations in a memory device are described. Temperature measurements of a memory device are recorded. A determination that a temperature measurement of the memory device satisfies a threshold temperature value is performed. In response to the determination, execution of a background operation in the memory device is delayed, and host system operation(s) continue to be executed in the memory device while execution of the background operation is delayed.
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公开(公告)号：US12216915B2
公开(公告)日：2025-02-04
申请号：US17967265
申请日：2022-10-17
Applicant: Micron Technology, Inc.
Inventor： Animesh R. Chowdhury , Kishore K. Muchherla , Nicola Ciocchini , Akira Goda , Jung Sheng Hoei , Niccolo′ Righetti , Jonathan S. Parry
IPC: G06F3/06
Abstract: Apparatuses, systems, and methods for adapting a read disturb scan. One example method can include determining a delay between a first read command and a second read command, incrementing a read count based on the determined delay between the first read command and the second read command, and adapting a read disturb scan rate based on the incremented read count.
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公开(公告)号：US11430528B2
公开(公告)日：2022-08-30
申请号：US17001757
申请日：2020-08-25
Applicant: Micron Technology, Inc.
Inventor： Vamsi Pavan Rayaprolu , Giuseppina Puzzilli , Karl D. Schuh , Jeffrey S. McNeil, Jr. , Kishore K. Muchherla , Ashutosh Malshe , Niccolo′ Righetti
Abstract: A change in a read window of a group of memory cells of a memory device that has undergone a plurality of program/erase cycles (PECs) can be determined. read voltage can be determined based at least in part on the determined change in the read window.
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公开(公告)号：US11301346B2
公开(公告)日：2022-04-12
申请号：US17005114
申请日：2020-08-27
Applicant: Micron Technology, Inc.
Inventor： Todd A. Marquart , Niccolo′ Righetti , Jeffrey S. McNeil, Jr. , Akira Goda , Kishore K. Muchherla , Mark A. Helm , Gil Golov , Jeremy Binfet , Carmine Miccoli , Giuseppina Puzzilli
Abstract: A system includes a processing device and a memory device coupled to the processing device. The memory device can include a cyclic buffer portion and a snapshot portion. The processing device can store time based telemetric sensor data in the cyclic buffer portion, copy an amount of the telemetric sensor data from the cyclic buffer portion to the snapshot portion in response to a trigger event, operate the cyclic buffer portion with a first trim tailored to a performance target of the cyclic buffer portion, and operate the snapshot portion with a second trim tailored to a performance target of the snapshot portion.
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公开(公告)号：US11983067B2
公开(公告)日：2024-05-14
申请号：US17897869
申请日：2022-08-29
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Kishore Kumar Muchherla , Niccolo′ Righetti , Sivagnanam Parthasarathy , Mustafa N. Kaynak , Mark A. Helm , James Fitzpatrick , Ugo Russo
CPC classification number: G06F11/1068 , G06F11/076 , G06F11/1435
Abstract: A method includes determining, by a processing device, a value of a memory endurance state metric associated with a segment of a memory device in a memory sub-system; determining a target value of a code rate based on the value of the memory endurance state metric, and adjusting the code rate of the memory device according to the target value, wherein the code rate reflects a ratio of a number of memory units designated for storing host-originated data to a total number of memory units designated for storing the host-originated data and error correction metadata.
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Patent Agency Ranking
公开(公告)号：US11709616B2
公开(公告)日：2023-07-25
申请号：US17890885
申请日：2022-08-18
Applicant: Micron Technology, Inc.
Inventor： Priya Venkataraman , Pitamber Shukla , Scott A. Stoller , Giuseppina Puzzilli , Niccolo′ Righetti
IPC: G06F3/06
CPC classification number: G06F3/0652 , G06F3/0625 , G06F3/0679
Abstract: A method is described that includes determining a number of program and erase cycles associated with a block of pages of a memory device and determining a preprogram voltage based on the number of program and erase cycles to apply to the block of pages prior to an erase operation. The method further includes applying the preprogram voltage to the block of pages and performing an erase operation on the block of pages following application of the preprogram voltage to the block of pages.
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公开(公告)号：US11481273B2
公开(公告)日：2022-10-25
申请号：US16995359
申请日：2020-08-17
Applicant: Micron Technology, Inc.
Inventor： Kishore K. Muchherla , Niccolo′ Righetti , Jeffrey S. McNeil, Jr. , Akira Goda , Todd A. Marquart , Mark A. Helm , Gil Golov , Jeremy Binfet , Carmine Miccoli , Giuseppina Puzzilli
Abstract: A memory component comprises a cyclic buffer partition portion and a snapshot partition portion. In response to receiving a signal that a trigger event has occurred, a processing device included in the memory component performs an error correction operation on a portion of data stored in the cyclic buffer partition portion, copies the data stored in the cyclic buffer partition portion to the snapshot partition portion in response to the error correction operation being successful, and sends the data stored in the cyclic buffer partition portion to a processing device operatively coupled to the memory component in response to the error correction operation not being successful.
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公开(公告)号：US11288160B2
公开(公告)日：2022-03-29
申请号：US16995246
申请日：2020-08-17
Applicant: Micron Technology, Inc.
Inventor： Jeffrey S. McNeil, Jr. , Niccolo′ Righetti , Kishore K. Muchherla , Akira Goda , Todd A. Marquart , Mark A. Helm , Gil Golov , Jeremy Binfet , Carmine Miccoli , Giuseppina Puzzilli
Abstract: A method includes writing received data sequentially to a particular location of a cyclic buffer of a memory device according to a first set of threshold voltage distributions. The method further includes performing a touch up operation on the particular location by adjusting the first set of threshold voltage distributions of the data to a second set of threshold voltage distributions in response to a determination that a trigger event has occurred. The second set of threshold voltage distributions can have a larger read window between adjacent threshold voltage distributions of the second set than that of the first set of threshold voltage distributions.
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公开(公告)号：US11775208B2
公开(公告)日：2023-10-03
申请号：US17829861
申请日：2022-06-01
Applicant: Micron Technology, Inc.
Inventor： Kishore K. Muchherla , Niccolo′ Righetti , Jeffrey S. McNeil, Jr. , Akira Goda , Todd A. Marquart , Mark A. Helm , Gil Golov , Jeremy Binfet , Carmine Miccoli , Giuseppina Puzzilli
CPC classification number: G06F3/0656 , G06F1/263 , G06F3/0613 , G06F3/0619 , G06F3/0644 , G06F3/0653 , G06F3/0673
Abstract: A system includes a processing device and a memory device communicatively coupled to the processing device. The memory device can include a cyclic buffer partition portion and a snapshot partition portion coupled to the cyclic buffer partition portion via hold-up capacitors. The snapshot partition portion can further include a first sub-partition portion having a first programming characteristic and a second sub-partition portion having a second programming characteristic. The processing device can write received data sequentially to the cycle buffer partition portion and write, based at least in part on a determination that a trigger event has occurred, data from the cyclic buffer partition portion to the first sub-partition portion or the second sub-partition portion, or both.
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公开(公告)号：US11663104B2
公开(公告)日：2023-05-30
申请号：US17691957
申请日：2022-03-10
Applicant: Micron Technology, Inc.
Inventor： Jeffrey S. McNeil, Jr. , Niccolo′ Righetti , Kishore K. Muchherla , Akira Goda , Todd A. Marquart , Mark A. Helm , Gil Golov , Jeremy Binfet , Carmine Miccoli , Giuseppina Puzzilli
CPC classification number: G06F11/3058 , G06F1/30 , G06F11/076 , G06F11/0772 , G06F11/0787 , G06F11/3037 , G11C5/141 , G11C16/3404 , G11C16/3418 , G06F2201/84
Abstract: A method includes writing received data sequentially to a particular location of a cyclic buffer of a memory device according to a first set of threshold voltage distributions. The method further includes performing a touch up operation on the particular location by adjusting the first set of threshold voltage distributions of the data to a second set of threshold voltage distributions in response to a determination that a trigger event has occurred. The second set of threshold voltage distributions can have a larger read window between adjacent threshold voltage distributions of the second set than that of the first set of threshold voltage distributions.
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