Abstract:
A multichip module provided with a first substrate, a first semiconductor chip, a second substrate and a third substrate. The first semiconductor chip has a first surface provided with a first electrode and a second surface mounted on the first substrate so that the first wiring of a first mount surface of the first substrate is electrically connected to the first electrode. The second substrate has a second mounting surface and a third mounting surface bonded to the first substrate so that the second mounting surface is opposed to the first mounting surface. The third substrate has a fourth mounting surface provided with a second wiring and a fifth mounting surface bonded to the second silicon substrate so that the fourth mounting surface is opposed to the third mounting surface and is mounted with the first semiconductor chip so that the second wiring is electrically connected to the second surface.
Abstract:
A bonding method of a first member and a second member includes: forming a first wire bonding bump (12) on a first electrode (14) arranged in the first member; forming a second wire bonding bump (22) on a second electrode 24 arranged in the second member; and flattening a tip section of the second wire bonding bump to form a bump flat surface (221). The tip section (120) of the first wire bonding bump and the bump flat surface (221) are pressure bonded to each other.
Abstract:
An operation adjustment method of an SOI device comprises steps of: (a) obtaining a drain current-substrate bias voltage characteristic of an NMOS transistor for a source-gate voltage of 0V; (b) obtaining a lowest substrate bias voltage which turns on the NMOS transistor from the drain current-substrate bias voltage characteristic; (c) determining an upper limit of a substrate bias voltage of a PMOS transistor as a voltage obtained by subtracting a built-in potential of a pn junction from the lowest substrate bias voltage; and (d) determining the substrate bias voltage of the PMOS transistor as a positive voltage lower than the upper limit. Reduction in the power consumption and maintenance of the radiation tolerance are both achieved for the SOI device.
Abstract:
A solid laser amplification device having a laser medium that has a solid medium, into which a laser light enters and from which the laser light is emitted, and an amplification layer, provided on the surface of the medium, receives the laser light in the medium, and amplifies and reflects the light toward the exit; and a microchannel cooling part that has a plurality of cooling pipelines, into which a cooling solvent is conducted and which are arranged parallel to the surface of the amplification layer, and a cooling surface, at the outer periphery of the cooling pipelines and attached on the surface of the amplification layer, the microchannel cooling part cooling the amplification layer. The closer the position of the cooling pipeline to a position facing a section of the amplification layer that receives the laser light, the greater the cooling force exhibited by the cooling part.
Abstract:
An observation control device applicable to a detector installed onboard a spacecraft for performing observation comprises an orthogonal direction control unit that moves an observation range in a direction orthogonal to a travel direction of the spacecraft, the observation range being a range observed by the detector, and a travel direction control unit that moves the observation range in the travel direction of the spacecraft.
Abstract:
A multichip module includes a plurality of semiconductor substrates and a plurality of surface mounting parts. The plurality of semiconductor substrates each have a wiring line region which contains a wiring line to pierce from one of the surfaces to the other surface. A plurality of surface mounting parts are mounted on either of the plurality of surface mounting parts. The plurality of semiconductor substrates are stacked to form a multilayer structure. The first surface mounting part as at least one of the plurality of surface mounting parts is arranged in an inside region of the multilayer structure.
Abstract:
This solid laser amplification device has: a laser medium part that has a solid medium, into which a laser light enters from an entrance part and from which the laser light (L) is emitted to the outside from an exit part, and an amplification layer, which is provided on the surface of the medium, receives the laser light in the medium, and amplifies and reflects said light toward the exit part; a microchannel cooling part that cools the amplification layer; and a thermally conductive part that is provided so as to make contact between the amplification layer and the cooling part and transfers the heat of the amplification layer to the cooling part.