公开(公告)号：US20030021571A1

公开(公告)日：2003-01-30

申请号：US09911487

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Keryn Lian ,  Aroon V. Tungare ,  Barbara Foley Barenburg

IPC: G02B006/00 ,  G02B006/10

CPC classification number: G02B6/1221 ,  G02B6/12002 ,  G02B6/131 ,  G02B6/132 ,  G02B2006/12097 ,  G02B2006/121 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Using such a compliant substrate, electro-optic structures and devices may be formed, and, in particular, cantilevered optic structures may be formed.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 可以使用这种柔性衬底，形成电光结构和器件，并且特别地可以形成悬臂式光学结构。

公开(公告)号：US20030021520A1

公开(公告)日：2003-01-30

申请号：US09911492

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Aroon Tungare ,  Keryn Lian ,  Robert Lempkowski ,  Barbara Foley Barenburg

IPC: G02B006/35 ,  G02B006/12

CPC classification number: G02B6/3518 ,  G02B6/3578 ,  G02B6/3598 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521

Abstract: A structure for an optical switch includes a reflective layer formed over a high quality epitaxial layer of piezoelectric compound semiconductor materials grown over a monocrystalline substrate, such as a silicon wafer. The piezoelectric layer can be activated to alter the path of light incident on the reflective layer. A compliant substrate is provided for growing the monocrystalline compound semiconductor layer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.

Abstract translation: 光开关的结构包括在单晶衬底（例如硅晶片）上生长的压电化合物半导体材料的高质量外延层上形成的反射层。 可以激活压电层以改变入射在反射层上的光的路径。 提供了用于生长单晶化合物半导体层的柔性衬底。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的压电单晶材料层晶格匹配。

公开(公告)号：US20030201852A1

公开(公告)日：2003-10-30

申请号：US10133913

申请日：2002-04-26

Applicant: Motorola, Inc.

Inventor： Manes Eliacin ,  Keryn Lian ,  Junhua Liu ,  Robert B. Lempkowski

IPC: H01P001/10

CPC classification number: H01H59/0009 ,  H01G5/16 ,  H01H2001/0073 ,  H01H2059/0054

Abstract: A meso-scale MEMS device having a cantilevered beam is formed using standard printed wiring board and high density interconnect technologies and practices. The beam includes at least some polymer material to constitute its length, and in some embodiments also comprises a conductive material as a load-bearing component thereof. In varying embodiments, the beam is attached at a location proximal to an end thereof, or distal to an end thereof.

Abstract translation: 使用标准印刷线路板和高密度互连技术和实践形成具有悬臂梁的中尺度MEMS器件。 梁包括构成其长度的至少一些聚合物材料，并且在一些实施例中还包括作为其承载部件的导电材料。 在不同的实施例中，梁被附接在靠近其端部的位置处，或者远离其端部。

公开(公告)号：US20030022414A1

公开(公告)日：2003-01-30

申请号：US09911627

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Keryn Lian ,  Marc Chason ,  Daniel Gamota ,  Barbara Foley Barenburg

IPC: H01L033/00

CPC classification number: H01L27/144 ,  H01L27/15 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/183 ,  H01S2301/173

Abstract: A opto-electronic semiconductor structure having an electrochromic switch includes a monocrystalline silicon substrate and an amorphous oxide material overlying the monocrystalline silicon substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. An optical source component that is adapted to transmit radiant energy may be formed within the monocrystalline compound semiconductor material. An electrochromic switch may be optically coupled to the optical source component. An optical detector component that is adapted to receive radiant energy may be formed within the monocrystalline compound semiconductor material. An electrochromic switch may be optically coupled to the optical detector component.

Abstract translation: 具有电致变色开关的光电子半导体结构包括单晶硅衬底和覆盖在单晶硅衬底上的无定形氧化物材料。 单晶钙钛矿氧化物材料覆盖无定形氧化物材料，单晶化合物半导体材料覆盖在单晶钙钛矿氧化物材料上。 可以在单晶化合物半导体材料内形成适于透射辐射能的光源组件。 电致变色开关可以光耦合到光源组件。 可以在单晶化合物半导体材料内形成适于接收辐射能的光学检测器部件。 电致变色开关可以光学耦合到光学检测器部件。