公开(公告)号：US20210381121A1

公开(公告)日：2021-12-09

申请号：US16893956

申请日：2020-06-05

Applicant: MacDermid Enthone Inc.

Inventor： Fengting Xu ,  Jean W. Chevalier ,  Ernest Long ,  Richard A. Bellemare ,  Michael M. Ryl

IPC: C25D3/46 ,  C25D3/32 ,  H01R43/26 ,  C25D5/12

Abstract: An electroplating bath for depositing a silver/tin alloy on a substrate. The electroplating bath comprises (a) a source of tin ions; (b) a source of silver ions; (c) an acid; (d) a first complexing agent; (e) a second complexing agent, wherein the second complexing agent is selected from the group consisting of allyl thioureas, aryl thioureas, and alkyl thioureas, and combinations thereof; and (f) optionally, a wetting agent, and (g) optionally, an antioxidant.

公开(公告)号：US20220170172A1

公开(公告)日：2022-06-02

申请号：US17591071

申请日：2022-02-02

Applicant: MacDermid Enthone Inc.

Inventor： Fengting Xu ,  Jean W. Chevalier ,  Ernest Long ,  Richard A. Bellemare ,  Michael M. Ryl

IPC: C25D3/46 ,  C25D5/12 ,  H01R43/26 ,  C25D3/32

Abstract: An electroplating bath for depositing a silver/tin alloy on a substrate. The electroplating bath comprises (a) a source of tin ions; (b) a source of silver ions; (c) an acid; (d) a first complexing agent; (e) a second complexing agent, wherein the second complexing agent is selected from the group consisting of allyl thioureas, aryl thioureas, and alkyl thioureas, and combinations thereof; and (f) optionally, a wetting agent, and (g) optionally, an antioxidant.

公开(公告)号：US20240224432A1

公开(公告)日：2024-07-04

申请号：US18289075

申请日：2022-05-10

Applicant: MacDermid Enthone Inc.

Inventor： Donald Desalvo ,  Ron Blake ,  Carmichael Gugliotti ,  William J. Decesare ,  Richard A. Bellemare

IPC: H05K3/42 ,  C25D3/38 ,  C25D5/18 ,  C25D7/00 ,  H05K1/11

CPC classification number: H05K3/424 ,  C25D3/38 ,  C25D5/18 ,  C25D7/00 ,  H05K1/115 ,  H05K2201/09563 ,  H05K2203/0723

Abstract: A method of copper electroplating in the manufacture of printed circuit boards. The method is used for filling through-holes and micro-vias with copper. The method includes the steps of: (1) preparing an electronic substrate to receive copper electroplating thereon; (2) forming at least one of one or more through-holes and/or one or more micro-vias in the electronic substrate; and (3) electroplating copper in the at least one or more through-holes and/or one or more blind micro-vias by contacting the electronic substrate with an acid copper electrolyte. The acid copper electrolyte is used to plate the one or more through-holes and/or the one or more blind micro-vias. A first pulse reverse plating waveform sequence is used to create a copper bridge in the center of the through-holes followed by direct plating until metallization is complete.

公开(公告)号：US20240271307A1

公开(公告)日：2024-08-15

申请号：US18568465

申请日：2022-05-25

Applicant: MacDermid Enthone Inc.

Inventor： Donald Desalvo ,  Ron Blake ,  Carmichael Gugliotti ,  William J. Decesare ,  Richard A. Bellemare ,  James Watkowski ,  Ernest Long

IPC: C25D5/18 ,  C25D3/38 ,  C25D5/02 ,  C25D7/00 ,  H05K3/42

CPC classification number: C25D5/18 ,  C25D3/38 ,  C25D5/02 ,  C25D7/00 ,  H05K3/421 ,  H05K3/424

Abstract: A method of copper electroplating in the manufacture of printed circuit boards. The method is used for filling through-holes and blind micro-vias with copper. The method includes the steps of: (1) preparing an electronic substrate to. receive copper electroplating thereon: (2) forming at least one of one or more through-holes and/or one or more blind micro-vias in the electronic substrate; and (3) electroplating copper in the at one or more through-holes and/or one or more blind micro-vias by contacting the electronic substrate with an acid copper electrolyte. The acid copper electrolyte is used to plate the one or more through-holes and/or the one or more blind micro-vias using a complex waveform including pulse reverse plating. DC plating and/or synchronous pulse plating. The complex waveforms can be used for filling through-holes and blind microvias with copper without defects.

公开(公告)号：US11643742B2

公开(公告)日：2023-05-09

申请号：US17591071

申请日：2022-02-02

Applicant: MacDermid Enthone Inc.

Inventor： Fengting Xu ,  Jean W. Chevalier ,  Ernest Long ,  Richard A. Bellemare ,  Michael M. Ryl

IPC: C25D3/64 ,  C25D3/32 ,  C25D3/12 ,  C25D3/46 ,  C25D5/12 ,  H01R43/26

CPC classification number: C25D3/46 ,  C25D3/32 ,  C25D3/64 ,  C25D5/12 ,  H01R43/26

Abstract: An electroplating bath for depositing a silver/tin alloy on a substrate. The electroplating bath comprises (a) a source of tin ions; (b) a source of silver ions; (c) an acid; (d) a first complexing agent; (e) a second complexing agent, wherein the second complexing agent is selected from the group consisting of allyl thioureas, aryl thioureas, and alkyl thioureas, and combinations thereof; and (f) optionally, a wetting agent, and (g) optionally, an antioxidant.

公开(公告)号：US11280014B2

公开(公告)日：2022-03-22

申请号：US16893956

申请日：2020-06-05

Applicant: MacDermid Enthone Inc.

Inventor： Fengting Xu ,  Jean W. Chevalier ,  Ernest Long ,  Richard A. Bellemare ,  Michael M. Ryl

IPC: C25D3/46 ,  C25D3/32 ,  C25D5/12 ,  H01R43/26

Abstract: An electroplating bath for depositing a silver/tin alloy on a substrate. The electroplating bath comprises (a) a source of tin ions; (b) a source of silver ions; (c) an acid; (d) a first complexing agent; (e) a second complexing agent, wherein the second complexing agent is selected from the group consisting of allyl thioureas, aryl thioureas, and alkyl thioureas, and combinations thereof; and (f) optionally, a wetting agent, and (g) optionally, an antioxidant.