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公开(公告)号：US07956593B2
公开(公告)日：2011-06-07
申请号：US11121262
申请日：2005-05-03
申请人： Makoto Ishida , Kazuaki Sawada , Hidekuni Takao , Minoru Sudo
发明人： Makoto Ishida , Kazuaki Sawada , Hidekuni Takao , Minoru Sudo
IPC分类号： G05F1/00
摘要： A power generation circuit generates and stores electric power utilizing electromagnetic wave energy. The power generation circuit has one of an antenna or a coil that receives an electromagnetic wave. A rectifying circuit is formed on a silicon substrate and rectifies a signal from the antenna or the coil. A storage circuit stores an output power obtained from the rectifying circuit for driving a load. A MOS transistor has a source and a drain connected to an output of the storage circuit and the load, respectively, so that the load is connected to the storage circuit in accordance with a threshold voltage of the MOS transistor.
摘要翻译： 发电电路利用电磁波能产生并存储电力。 发电电路具有接收电磁波的天线或线圈之一。 在硅衬底上形成整流电路，对来自天线或线圈的信号进行整流。 存储电路存储从用于驱动负载的整流电路获得的输出功率。 MOS晶体管的源极和漏极分别连接到存储电路和负载的输出端，使得负载根据MOS晶体管的阈值电压连接到存储电路。
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公开(公告)号：US07855429B2
公开(公告)日：2010-12-21
申请号：US12288814
申请日：2008-10-23
申请人： Makoto Ishida , Kazuaki Sawada , Hidekuni Takao , Minoru Sudo
发明人： Makoto Ishida , Kazuaki Sawada , Hidekuni Takao , Minoru Sudo
CPC分类号： H01L25/16 , H01L29/0657 , H01L2224/16 , H01L2924/1461 , H01L2924/19104 , H01L2924/3011 , H01L2924/00
摘要： An electronic circuit device comprises a silicon substrate having front and rear surfaces, a semiconductor element formed on the front surface, and at least one through-hole penetrating through the front surface and the rear surface. At least one passive element is supported by the silicon substrate. At least one connecting element is disposed in the through-hole of the silicon substrate for electrically connecting the semiconductor element to the passive element.
摘要翻译： 电子电路装置包括具有前表面和后表面的硅衬底，形成在前表面上的半导体元件和贯穿前表面和后表面的至少一个通孔。 至少一个无源元件由硅衬底支撑。 至少一个连接元件设置在硅衬底的通孔中，用于将半导体元件电连接到无源元件。
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3.发明授权Power generation circuit for generating and storing electric power utilizing radio wave energy 有权利用无线电波能量产生和存储电力的发电电路公开(公告)号：US08513927B2
公开(公告)日：2013-08-20
申请号：US13066418
申请日：2011-04-14
申请人： Makoto Ishida , Kazuaki Sawada , Hidekuni Takao , Minoru Sudo
发明人： Makoto Ishida , Kazuaki Sawada , Hidekuni Takao , Minoru Sudo
IPC分类号： G05F1/00
摘要： A power generation circuit has one of an antenna or a coil that receives an ambient radio wave. A rectifying circuit is connected to the antenna or the coil for rectifying a signal from the antenna or the coil receiving the ambient radio wave. A booster circuit is connected to and boosts an output of the rectifying circuit. A storage circuit is connected to the booster circuit and stores an output power obtained from the rectifying circuit for driving a load without the use of a power source or a battery. A switching circuit is operable in an ON-state thereof to connect the storage circuit to the load when a voltage of the storage circuit is equal to or greater than a preselected voltage.
摘要翻译： 发电电路具有接收环境无线电波的天线或线圈之一。 整流电路连接到天线或线圈，用于整流来自天线或接收环境无线电波的线圈的信号。 升压电路与整流电路的输出端连接并升压。 存储电路连接到升压电路，并且存储从整流电路获得的用于驱动负载而不使用电源或电池的输出功率。 当存储电路的电压等于或大于预选电压时，开关电路在其导通状态下可操作以将存储电路连接到负载。
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公开(公告)号：US20110193420A1
公开(公告)日：2011-08-11
申请号：US13066418
申请日：2011-04-14
申请人： Makoto Ishida , Kazuaki Sawada , Hidekuni Takao , Minoru Sudo
发明人： Makoto Ishida , Kazuaki Sawada , Hidekuni Takao , Minoru Sudo
IPC分类号： H02J17/00
摘要： A power generation circuit using an electromagnetic wave which does not require any additional energy is provided. Power generation is performed by utilizing the electromagnetic wave existing in a space for living.
摘要翻译： 提供使用不需要额外能量的电磁波的发电电路。 通过利用存在于生活空间中的电磁波来进行发电。
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公开(公告)号：US20090065894A1
公开(公告)日：2009-03-12
申请号：US12288814
申请日：2008-10-23
申请人： Makoto Ishida , Kazuaki Sawada , Hidekuni Takao , Minoru Sudo
发明人： Makoto Ishida , Kazuaki Sawada , Hidekuni Takao , Minoru Sudo
IPC分类号： H01L29/00
CPC分类号： H01L25/16 , H01L29/0657 , H01L2224/16 , H01L2924/1461 , H01L2924/19104 , H01L2924/3011 , H01L2924/00
摘要： An electronic circuit device comprises a silicon substrate having front and rear surfaces, a semiconductor element formed on the front surface, and at least one through-hole penetrating through the front surface and the rear surface. At least one passive element is supported by the silicon substrate. At least one connecting element is disposed in the through-hole of the silicon substrate for electrically connecting the semiconductor element to the passive element.
摘要翻译： 电子电路装置包括具有前表面和后表面的硅衬底，形成在前表面上的半导体元件和贯穿前表面和后表面的至少一个通孔。 至少一个无源元件由硅衬底支撑。 至少一个连接元件设置在硅衬底的通孔中，用于将半导体元件电连接到无源元件。
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公开(公告)号：US20050233518A1
公开(公告)日：2005-10-20
申请号：US11093614
申请日：2005-03-30
申请人： Makoto Ishida , Kazuaki Sawada , Hidekuni Takao , Minoru Sudo
发明人： Makoto Ishida , Kazuaki Sawada , Hidekuni Takao , Minoru Sudo
IPC分类号： H01L25/00 , B81B7/00 , G01P15/00 , H01L21/335 , H01L23/29 , H01L23/52 , H01L25/04 , H01L25/065 , H01L25/07 , H01L25/16 , H01L25/18 , H01L29/06 , H01L29/84
CPC分类号： H01L25/16 , H01L29/0657 , H01L2224/16 , H01L2924/1461 , H01L2924/19104 , H01L2924/3011 , H01L2924/00
摘要： An electronic circuit device having a silicon substrate is provided comprising: a silicon substrate having a semiconductor element and a recess; and at least one passive element which is formed by a process different from a silicon planar process by which the semiconductor element is formed. In the electronic circuit device, the passive element is entrenched in the recess of the silicon substrate, and the semiconductor element formed on the silicon substrate is electrically connected to the passive element.
摘要翻译： 提供一种具有硅基板的电子电路装置，包括：具有半导体元件和凹部的硅基板; 以及通过不同于形成半导体元件的硅平面工艺的工艺形成的至少一个无源元件。 在电子电路装置中，无源元件固定在硅衬底的凹槽中，并且形成在硅衬底上的半导体元件电连接到无源元件。
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公开(公告)号：US06683358B1
公开(公告)日：2004-01-27
申请号：US09554241
申请日：2000-05-10
IPC分类号： H01L2982
CPC分类号： G01P15/123 , B81B3/0018 , G01P15/0802 , G01P15/18 , G01P2015/084
摘要： In an accelerometer, the stress is detected through electric amplification with the use of detecting elements 411-434 having an amplification function arranged on beams 3 and, with the use of a differential amplifier circuits 510 formed on the support base 1, an acceleration component in a detection axis direction to which the stress is applied is outputted as the differential mode and acceleration components in the other axis directions are outputted as the common mode, so that each axis sensitivity ratio between the detection axis sensitivity and the other axis sensitivities is enhanced largely.
摘要翻译： 在加速度计中，通过使用具有布置在波束3上的放大功能的检测元件411-434，通过电放大来检测应力，并且通过使用形成在支撑基座1上的差分放大器电路510， 输出施加应力的检测轴方向作为差模，将其它轴方向的加速度分量作为共模输出，使得检测轴灵敏度与其他轴灵敏度之间的每个轴灵敏度比大大提高 。
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公开(公告)号：US08183594B2
公开(公告)日：2012-05-22
申请号：US12450182
申请日：2007-12-12
申请人： Makoto Ishida , Kazuaki Sawada , Daisuke Akai , Yiping Guo
发明人： Makoto Ishida , Kazuaki Sawada , Daisuke Akai , Yiping Guo
IPC分类号： H01L23/14
CPC分类号： H01L21/28291 , H01G4/1245 , H01G4/33 , H01L21/31691 , H01L27/11502 , H01L27/11585 , H01L27/1159 , H01L27/20 , H01L28/55 , H01L28/65 , H01L28/75 , H01L29/94 , H01L41/08 , H01L41/1876 , H01L41/318
摘要： An object of the present invention is to provide a ferroelectric element having excellent properties, which includes a monocrystalline film of γ-Al2O3 formed as a buffer layer on a silicon substrate. The monocrystalline γ-Al2O film is formed on the silicon substrate which is the lowermost layer of an MFMIS structure. On the monocrystalline γ-Al2O3 film, there is formed an electrically conductive oxide in the form of a LaNiO3 film as a lower electrode. On the LaNiO3 film, there is formed a PZT thin film which is a ferroelectric material. On the PZT thin film, there is formed a Pt film as an upper electrode.
摘要翻译： 本发明的目的是提供具有优异性能的铁电体元件，其包括在硅衬底上作为缓冲层形成的γ-Al 2 O 3的单晶膜。 在作为MFMIS结构的最下层的硅衬底上形成单晶γ-Al 2 O膜。 在单晶γ-Al 2 O 3膜上形成作为下电极的LaNiO 3膜形式的导电氧化物。 在LaNiO3膜上形成作为铁电体的PZT薄膜。 在PZT薄膜上形成Pt膜作为上部电极。
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公开(公告)号：US20100096666A1
公开(公告)日：2010-04-22
申请号：US12450182
申请日：2007-12-12
申请人： Makoto Ishida , Kazuaki Sawada , Daisuke Akai , Mikinori Ito , Mikito Otonari , Kenro Kikuchi , Yiping Guo
发明人： Makoto Ishida , Kazuaki Sawada , Daisuke Akai , Mikinori Ito , Mikito Otonari , Kenro Kikuchi , Yiping Guo
IPC分类号： H01L23/14
CPC分类号： H01L21/28291 , H01G4/1245 , H01G4/33 , H01L21/31691 , H01L27/11502 , H01L27/11585 , H01L27/1159 , H01L27/20 , H01L28/55 , H01L28/65 , H01L28/75 , H01L29/94 , H01L41/08 , H01L41/1876 , H01L41/318
摘要： An object of the present invention is to provide a ferroelectric element having excellent properties, which includes a monocrystalline film of γ-Al2O3 formed as a buffer layer on a silicon substrate.The monocrystalline γ-Al2O3 film 6 is formed on the silicon substrate 4 which is the lowermost layer of an MFMIS structure 2. On the monocrystalline γ-Al2O3 film 6, there is formed an electrically conductive oxide in the form of a LaNiO3 film 8 as a lower electrode. On the LaNiO3 film 8, there is formed a PZT thin film 10 which is a ferroelectric material. ON the PZT thin film 10, there is formed a Pt film as an upper electrode.
摘要翻译： 本发明的目的是提供具有优异性能的铁电体元件，其包括在硅衬底上形成为缓冲层的γ-Al 2 O 3的单晶膜。 在作为MFMIS结构2的最下层的硅衬底4上形成单晶γ-Al 2 O 3膜6.在单晶γ-Al 2 O 3膜6上形成LaNiO 3膜8形式的导电氧化物，如 下电极。 在LaNiO3膜8上形成作为铁电体的PZT薄膜10。 在PZT薄膜10上形成Pt膜作为上电极。
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10.发明申请Semiconductor element, semiconductor sensor and semiconductor memory element 有权半导体元件，半导体传感器和半导体存储元件公开(公告)号：US20060278907A1
公开(公告)日：2006-12-14
申请号：US10549364
申请日：2004-03-05
CPC分类号： H01L41/29 , H01L29/78391 , H01L37/02 , H01L41/319
摘要： A semiconductor element, a semiconductor sensor, and a semiconductor memory element are provided, in which an MFMIS structure having a lower electrode and an integrated circuit can be integrated. An epitaxially grown γ-Al2O3 single crystal film (2) is disposed on a semiconductor single crystal substrate (1), and an epitaxial single crystal Pt thin film (3) is disposed on the γ-Al2O3 single crystal film (2).
摘要翻译： 提供一种半导体元件，半导体传感器和半导体存储元件，其中可以集成有具有下电极和集成电路的MFMIS结构。 外延生长的γ-Al 2 O 3单晶膜（2）设置在半导体单晶衬底（1）上，并且外延单晶Pt薄膜 3）设置在γ-Al 2 O 3单晶膜（2）上。
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