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27 条记录 (耗时 0.042 秒)

    Gradated photomask and its fabrication process
    5.
    发明授权
    Gradated photomask and its fabrication process 有权
    分级光掩模及其制造工艺

    公开(公告)号：US08124301B2

    公开(公告)日：2012-02-28

    申请号：US12066203

    申请日：2006-09-19

    申请人： Junji Fujikawa ,  Shu Shimada ,  Yuuichi Yoshida ,  Shiho Sasaki ,  Tsuyoshi Amano ,  Kimio Ito ,  Nobuhito Toyama ,  Hiroshi Mohri

    发明人： Junji Fujikawa ,  Shu Shimada ,  Yuuichi Yoshida ,  Shiho Sasaki ,  Tsuyoshi Amano ,  Kimio Ito ,  Nobuhito Toyama ,  Hiroshi Mohri

    IPC分类号： G03F1/00 ,  G03F9/00

    CPC分类号： G03F1/46 ,  G03F1/50

    摘要： The invention provides a gradated photomask for reducing photolithography steps and its fabrication process, which make use of a generally available photomask blank, prevents the reflectance of a light shield film from growing high, makes alignment easy during the formation of a semitransparent film, and enables the semi-transparent film on a light shield pattern with good step coverage. A photomask (100) comprises a mixture of a light shield area including a light shield film (114) having a desired pattern on a transparent substrate wherein a film forming the pattern is substantially opaque to photolithographic light, a semitransparent film (113) that transmits the photolithographic light at a desired transmittance, and the light shield film (114) and the semitransparent film (113) are stacked on the transparent substrate (101) in that order; a semi-transparent area wherein there is only the semitransparent film (113); and a transmissive area there is neither the light shield film (114) nor the semitransparent film (113), and is characterized in that the semitransparent film (113) has an antireflection function with respect to the photolithographic light.

    摘要翻译： 本发明提供了一种用于减少光刻步骤的渐变光掩模及其制造工艺，其使用通常可获得的光掩模坯料防止遮光膜的反射率增长，使得在形成半透明膜期间容易对准，并且使得能够 半透明薄膜在遮光罩上具有良好的台阶覆盖率。 光掩模（100）包括在透明基板上包括具有期望图案的遮光膜（114）的遮光区域的混合物，其中形成图案的膜对光刻光基本上不透明;透射膜（113），透射膜 所述透光性的光刻光以及遮光膜（114）和半透明膜（113）依次层叠在透明基板（101）上; 半透明区域，其中仅有半透明膜（113）; 透光区域既不存在遮光膜（114）也不存在半透明膜（113），其特征在于，半透明膜（113）相对于光刻光具有防反射功能。

    Blank for halftone phase shift photomask and halftone phase shift photomask
    6.
    发明授权
    Blank for halftone phase shift photomask and halftone phase shift photomask 有权
    用于半色调相移光掩模和半色调相移光掩模的空白

    公开(公告)号：US06458496B2

    公开(公告)日：2002-10-01

    申请号：US09736805

    申请日：2000-12-14

    申请人： Toshiaki Motonaga ,  Toshifumi Yokoyama ,  Takafumi Okamura ,  Yoshinori Kinase ,  Hiroshi Mohri ,  Junji Fujikawa ,  Hiro-o Nakagawa ,  Shigeki Sumida ,  Satoshi Yusa ,  Masashi Ohtsuki

    发明人： Toshiaki Motonaga ,  Toshifumi Yokoyama ,  Takafumi Okamura ,  Yoshinori Kinase ,  Hiroshi Mohri ,  Junji Fujikawa ,  Hiro-o Nakagawa ,  Shigeki Sumida ,  Satoshi Yusa ,  Masashi Ohtsuki

    IPC分类号： G03S900

    CPC分类号： G03F1/32 ,  B32B17/06

    摘要： A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film. When such a blank is first etched with a fluorinated gas and then etched with chlorinated gas, because an etching selective ratio to a transparent substrate made of synthetic quartz and the like can be taken sufficiently while maintaining the applicability to the exposure light with a short wavelength that is characteristic of silicide materials in addition to good chemical stability and good processing properties that are characteristic of tantalum materials, patterning in high precision will be made possible. As a result, it is possible to obtain an ideal halftone phase shift photomask excellent in stability after mask processing and in the applicability to the short wavelength.

    摘要翻译： 本发明中的半色调相移光掩模的空白包括透明基板和设置在其上的半色调相移膜，所述半色调相移膜具有多层结构，其中至少可以用氯化气体蚀刻的第一层 并且能够用氟化气体蚀刻的第二层从靠近所述透明基板的一侧依次设置。 由硅化钽制成的薄膜适用于半色调相移薄膜的第二层。 当首先用氟化气体蚀刻这样的坯料，然后用氯化气体蚀刻时，由于可以充分利用由合成石英等制成的透明基板的蚀刻选择比，同时保持对短波长的曝光光的适用性 这是硅化物材料的特征，除了钽材料的特征的良好的化学稳定性和良好的加工性能之外，将能够高精度地进行图案化。 结果，可以获得在掩模处理之后和在短波长的适用性方面优异的理想半色调相移光掩模。

    Halftone phase shift photomask and blanks for halftone phase shift photomask for producing it
    7.
    发明授权
    Halftone phase shift photomask and blanks for halftone phase shift photomask for producing it 失效
    半色调相移光掩模和用于生产它的半色调相移光掩模的空白

    公开(公告)号：US06764792B1

    公开(公告)日：2004-07-20

    申请号：US09830598

    申请日：2001-04-27

    申请人： Junji Fujikawa ,  Yoshinori Kinase ,  Takafumi Okamura ,  Hiroshi Mohri ,  Toshifumi Yokoyama ,  Haruo Kokubo

    发明人： Junji Fujikawa ,  Yoshinori Kinase ,  Takafumi Okamura ,  Hiroshi Mohri ,  Toshifumi Yokoyama ,  Haruo Kokubo

    IPC分类号： G03F900

    CPC分类号： G03F1/32 ,  G03F1/58

    摘要： The invention relates to a halftone phase shift photomask which is controlled with precision in terms of its transmittance at a wavelength applied to inspection, and measuring equipment, so that its quality can easily be assured even when its phase difference at an exposure wavelength is controlled at 180° C. with precision and its transmittance is set at 1 to 20% as desired at that wavelength. The halftone phase shift photomask (107) comprises on a transparent substrate (101) and a halftone phase shift film containing at least tantalum, oxygen, carbon and nitrogen, and has a multilayer structure comprising at least two or more different layers (102) and (103).

    摘要翻译： 本发明涉及一种半色调相移光掩模，其在对检查的波长的透射率和测量设备方面进行精确控制，使得即使将其在曝光波长处的相位差控制在 180℃，其透过率根据需要设定在1〜20％。 半色调相移光掩模（107）包括在透明基板（101）和至少含有钽，氧，碳和氮的半色调相移膜，并且具有包括至少两个或多个不同层（102）和 （103）。

    Phase shift photomask comprising a layer of aluminum oxide with magnesium oxide
    8.
    发明授权
    Phase shift photomask comprising a layer of aluminum oxide with magnesium oxide 失效
    相移光掩模，其包含氧化铝层与氧化镁

    公开(公告)号：US5380608A

    公开(公告)日：1995-01-10

    申请号：US974919

    申请日：1992-11-12

    申请人： Hiroyuki Miyashita ,  Masahiro Takahashi ,  Hiroshi Mohri

    发明人： Hiroyuki Miyashita ,  Masahiro Takahashi ,  Hiroshi Mohri

    IPC分类号： G03F1/26 ,  G03F1/29 ,  G03F1/30 ,  G03F9/00

    CPC分类号： G03F1/29 ,  G03F1/30 ,  G03F1/26

    摘要： The invention is directed to a phase shift photomask for which a film made of a material capable of providing an etching stopper layer that excels in etching selectivity and can interrupt etching surely and automatically, and provides a phase shift photomask at least comprising a substrate 30 and a phase shifter pattern made of a material composed mainly of silicon oxide that is provided on the surface of the substrate directly or with an opaque layer 37 interposed therebetween, said phase shift photomask being characterized in that the surface 30 is provided on the surface with an etching stopper layer 30 that comprises a mixture of Al.sub.2 O.sub.3 with MgO, ZrO.sub.2, Ta.sub.2 O.sub.5 or HfO, or CrO.sub.x, CrN.sub.y, CrC.sub.z, CrO.sub.x N.sub.y, CrO.sub.x C.sub.z or CrO.sub.x N.sub.y C.sub.z, or MgF.sub.2-2x O.sub.y, CaF.sub.2-2x O.sub.y, LiF.sub.2-2x O.sub.y, BaF.sub.2-2x O.sub.y, La.sub.2 F.sub.6-2x O.sub.y or Ce.sub.2 F.sub.6-2x O.sub.y, whereby the etching stopper layer is allowed to etch a transparent film for a phase shifter surely and accurately, when making a phase shifter pattern by etching.

    摘要翻译： 本发明涉及一种相移光掩模，其中由能够提供蚀刻选择性优异并且可以中断和自动中断蚀刻的蚀刻阻挡层的材料制成的膜，并且提供至少包括基板30的相移光掩模和 由主要由氧化硅构成的材料制成的移相器图案，其直接设置在基板的表面上，或者设置在其间的不透明层37，所述相移光掩模的特征在于，表面30设置在表面上 蚀刻阻挡层30，其包含Al 2 O 3与MgO，ZrO 2，Ta 2 O 5或HfO，或CrO x，CrN y，CrC z，CrO x N y，CrO x C z或CrO x N y C z或MgF 2 -2 x O y，CaF 2 -2 x O y，LiF 2 -2 x O y，BaF 2 -2 x O y，La 2 F 6 -2xOy或Ce2F6-2x Oy，从而当通过蚀刻制造移相器图案时，可以确切地和准确地蚀刻蚀刻停止层用于移相器的透明膜。

    Dental Cement Composition
    9.
    发明申请
    Dental Cement Composition 审中-公开
    牙科水泥组合物

    公开(公告)号：US20070293599A1

    公开(公告)日：2007-12-20

    申请号：US10555610

    申请日：2004-04-14

    申请人： Norikazu Ueyama ,  Hiroshi Mohri

    发明人： Norikazu Ueyama ,  Hiroshi Mohri

    IPC分类号： A61K6/087

    CPC分类号： A61K6/0023 ,  A61K6/0276 ,  A61K6/06 ,  A61K6/083 ,  C08L33/00

    摘要： A dental cement composition comprising an organic polymer and an inorganic powder including a polyvalent metal compound. The polymer comprises a unit (A) containing a (substituted) carboxyl group represented by a formula (I), and a unit (B) containing a (substituted) carbamoyl group represented by a formula (II). A sum of the units (A) and (B) accounts for at least 20 mol % of all units that form the organic polymer and a ratio of the unit (A)/unit (B) in the organic polymer is within a range from 0.6/1.0 to 1.0/0.6. When the quantity of the unit (A) or (B) having a smaller quantity than the other unit within the polymer is deemed 100 mol %, then in at least 70 mol % of the unit (A) or (B), carbons bonded to the (substituted) carboxyl group in the unit (A) and the (substituted) carbamoyl group in the unit (B) are either directly adjacent, or bonded together via a methylene group or ethylene group. (In formula (I), n represents either 0 or 1, X represents a hydrogen atom, —NH4, or 1/mM (wherein, M is a metal atom selected from the group consisting of alkali metals, alkali earth metals, transition metals, Zn and Cd, and m represents a valency of the metal), and R1 represents a hydrogen atom or a methyl group.) (In formula (II), n represents either 0 or 1, R2 represents a hydrogen atom or a methyl group, and R3 represents a hydrogen atom, an alkyl group, alkenyl group, aralkyl group or phosphonoxyalkyl group of 1 to 18 carbon atoms.)

    摘要翻译： 一种牙科用水泥组合物，其包含有机聚合物和包含多价金属化合物的无机粉末。 聚合物包含含有式（I）所示的（取代）羧基的单元（A）和含有式（II）所示的（取代的）氨基甲酰基的单元（B）。 单位（A）和（B）的总和占构成有机聚合物的所有单元的至少20摩尔％，并且有机聚合物中单元（A）/单元（B）的比例在 0.6 / 1.0〜1.0 / 0.6。 当单体（A）或（B）的量小于聚合物内的其他单元的量为100mol％时，则在至少70mol％的单元（A）或（B）中，碳键合 单元（A）中的（取代的）羧基和单元（B）中的（取代的）氨基甲酰基直接相邻或通过亚甲基或亚乙基键合在一起。 （式（I）中，n表示0或1，X表示氢原子，-NH 4或1 / mM（式中，M表示选自碱金属 金属，碱土金属，过渡金属，Zn和Cd，m表示金属的化合价），R 1表示氢原子或甲基。（式（II）中， n表示0或1，R 2表示氢原子或甲基，R 3表示氢原子，烷基，烯基，芳烷基或 1至18个碳原子的膦酰氧基烷基）

    Phase shift mask and method of producing the same
    10.
    发明授权
    Phase shift mask and method of producing the same 失效
    相移掩模及其制造方法

    公开(公告)号：US5972543A

    公开(公告)日：1999-10-26

    申请号：US100083

    申请日：1998-06-19

    申请人： Toshifumi Yokoyama ,  Koichi Mikami ,  Chiaki Hatsuda ,  Hiroshi Mohri

    发明人： Toshifumi Yokoyama ,  Koichi Mikami ,  Chiaki Hatsuda ,  Hiroshi Mohri

    IPC分类号： H01L21/027 ,  G03F1/32 ,  G03F9/00

    CPC分类号： G03F1/32

    摘要： A phase shift mask, e.g. a halftone phase shift mask, which need not to form an ultra-fine pattern and is capable of suppressing during exposure the occurrence of a sub-peak of light intensity, which has an adverse effect on the image formation, and which has a light-blocking pattern with a reduced transmittance at a region outside a device pattern area which corresponds to a region subjected to multiple exposure during transfer effected by using the mask. The halftone phase shift mask has on a transparent substrate (101) a halftone phase shift film (102) comprising a single layer or a plurality of layers. The composition of the halftone phase shift film (102) is changed in a region (107) outside a device pattern area on the transparent substrate (101) which corresponds to a multiple-exposure region by a method wherein the region (107) is irradiated with an electromagnetic wave, a particle beam, heat rays, etc., or a method wherein after a region in which the composition is not desired to change has been masked, the whole blank is exposed to an active atmosphere, thereby reducing the transmittance for exposure light at the region (107).

    摘要翻译： 相移掩模，例如 半色调相移掩模，其不需要形成超细图案，并且能够在曝光期间抑制对图像形成产生不利影响的光强度的次峰值的出现， 在对应于通过使用掩模进行的转印期间经受多次曝光的区域的器件图案区域外的区域处的透射率降低的阻挡图案。 半色调相移掩模在透明基板（101）上具有包括单层或多层的半色调相移膜（102）。 通过照射区域（107）的方法，半透明相移膜（102）的组成在与多曝光区域对应的透明基板（101）的装置图案区域外的区域（107）中变化 具有电磁波，粒子束，热射线等，或者其中在组合物不希望改变的区域已被掩蔽之后，整个坯料暴露于活性气氛，从而降低透射率 在区域（107）处的曝光光。