摘要:
A voltage generator arrangement supplies a largely constant output voltage with a high current driver capability. A bandgap reference circuit drives a voltage generator on the output side, if necessary via an impedance converter. The bandgap reference circuit and the impedance converter on the one hand, and the voltage generator on the other hand, are connected to different reference ground potential lines. The voltage generator on the output side is preceded by a correction circuit, which corrects for the voltage drop on that reference ground potential line to which the output-side voltage generator is connected. The voltage generator arrangement is suitable for a greater integration density.
摘要:
A voltage generator arrangement supplies a largely constant output voltage with a high current driver capability. A bandgap reference circuit is downstream from an impedance converter and downstream a voltage generator. The bandgap reference circuit and the impedance converter on the one hand and the voltage generator on the other hand are connected to different reference ground potential line. The impedance converter contains a charge pump circuit to provide increased control potential, which drives the voltage generator. The voltage generator in contrast produces a reduced output potential. The influence of any voltage drop on that reference ground potential line to which the voltage generator is connected in the output potential is thus likewise reduced.
摘要:
An integrated semiconductor circuit can have memory cells, which can be read by word lines and bit lines. Two mutually adjacent bit lines in each case are connected to inputs of the same signal amplifier. In order to compensate for parasitic capacitors, which arise at thin sidewall insulations between the patterned word lines and adjacent bit line contacts, additional contact structures which lead past the word lines and represent dummy contacts can be provided. The additional parasitic capacitances produced by the dummy contact alter the electrical potential of the respective reference bit line at the signal amplifier like the parasitic capacitances of activated bit lines, as a result of which the measured differential potential can be corrected with respect to the parasitic effects.
摘要:
A circuit configuration for the bit-parallel outputting the bits of a data word includes at least two signal lines for feeding the data signals representing the bits of the data word to driver stages and to a reference circuit. Further driver stages are connected in parallel with the driver stages and have inputs connected to the control device. The control device establishes the signal states of the data signals to be transferred on each signal line and generates a control signal depending on the type and number of the signal state changes of bit sequences to be transferred. It is possible to drive the driver stages that assigned to the signal line for which a signal state change is present.
摘要:
An integrated semiconductor circuit includes a cell array having memory cells which can be read by word lines and bit lines. Two bit lines in each case are connected to inputs of the same signal amplifier. In order to compensate for parasitic capacitances which arise at thin sidewall insulations between the patterned word lines and adjacent bit line contacts which connect the bit lines located at a higher level to the active regions located at a deeper level, two additional word lines and dummy contacts of the bit lines are dummy contacts lead past this additional word lines. The additional parasitic capacitances produced by the dummy contacts alter the electrical potential of the respective reference bit line at the signal amplifier in the same way as the parasitic capacitances of activated bit lines, as a result of which the measured differential potential is corrected with respect to the parasitic effects.
摘要:
A circuit configuration has a first driver stage for feeding in an input signal and for outputting an amplified signal. A second driver stage, which is connected in parallel with the first driver stage, is fed, on the input side, both the input signal and a control signal from a reference circuit connected upstream. The reference circuit compares the feedback level of an output signal, which level is present at one of its inputs, with the level of the input signal present at its other input and generates the control signal for driving the driver stage in the event that the level of the output signal is lower than the level of the input signal. As a result, the driver stage is connected for additional amplification of the input signal.
摘要:
A field effect semiconductor comprises a semiconductor layer having a surface, a first and a second semiconductor region in the semiconductor layer, which are arranged next to one another at the surface of the semiconductor layer, an insulating layer between the first semiconductor region and the second semiconductor region, a semiconductor strip on the surface of the semiconductor layer, which semiconductor strip overlaps the first semiconductor region and the second semiconductor region and adjoins these. A gate overlaps the semiconductor strip at least in the region of the insulating layer. A gate dielectric insulates the gate from the semiconductor strip the first semiconductor region and the second semiconductor region. The semiconductor strip and the gate being formed such that the semiconductor strip is electrically insulating at a first predetermined gate voltage and is electrically conductive at a second predetermined gate voltagero.
摘要:
An integrated circuit includes a circuit component, a first control circuit and a switchable resistance network. An input voltage is fed to the circuit component on the input side. A control signal generated by the first control circuit is fed to the control terminal of the circuit component. With the switchable resistance network, the first resistance or the second resistance is connected between an output terminal of the circuit component and the output terminal of the integrated circuit to generate a voltage drop between the input side and the output terminal of the circuit component. The integrated circuit makes it possible to generate a current at the output terminal of the circuit component in a manner dependent on the control signal and the voltage dropped between the input side and the output terminal of the circuit component. Families of characteristic curves of transistors of an integrated circuit are determined by the integrated circuit.
摘要:
An integrated semiconductor memory, which can be operated in a normal operating state and a test operating state, includes a current pulse circuit with an input terminal for applying an input signal. The current pulse circuit is connected to an output terminal via an interconnect for carrying a current. In the test operating state, the current pulse circuit generates at least one first current pulse with a first, predetermined time duration in a first test cycle and at least one second current pulse with a second, unknown time duration in a subsequent second test cycle. In addition to a first current flowing on the interconnect in the normal operating state, a second current flows on the interconnect during the first test cycle and a third current flows during the second test cycle in the test operating state.
摘要:
An integrated circuit includes a current generator circuit with a first input terminal for applying a reference voltage and a second input terminal for applying an input voltage, which is generated internally from an externally applied supply voltage by a voltage generator circuit. The current generator circuit is connected to an output terminal via an interconnect. A first current flows on the interconnect in a test operating state of the integrated circuit. The current generator circuit generates a first partial current in a first test cycle of a test operating state and a second partial current in a subsequent second test cycle. The partial currents are each superposed on the first current on the interconnect. Consequently, three currents occur at the output terminal during the test operating state. The internally generated input voltage of the current generator circuit is determined from the three currents and the reference voltage.