摘要:
Optoelectronic organic component, comprising: a first electrode, a first planarization layer which is disposed on the first electrode, a first injection layer which is disposed on the planarization layer, an organic functional layer which is disposed on the injection layer, a second electrode which is disposed on the organic functional layer, wherein in the case that the first electrode is an anode, the following applies for the energy levels: EF-EHOMO,Inj.≦EF-EHOMO,Plan. and EF-EHOMO,Inj.
摘要:
Optoelectronic organic component, comprising: a first electrode, a first planarization layer which is disposed on the first electrode, a first injection layer which is disposed on the planarization layer, an organic functional layer which is disposed on the injection layer, a second electrode which is disposed on the organic functional layer, wherein in the case that the first electrode is an anode, the following applies for the energy levels: EF−EHOMO,Inj.≦−EHOMO,Plan. and EF−EHOMO,Inj
摘要:
A method for producing an organic electronic component comprises, in particular, the following steps: A) producing at least one functional layer stack (10) with the following substeps: A1) providing a flexible first substrate (1), A2) applying at least one organic layer (2) in large-area fashion on the first substrate (1) by means of a coil coating plant (90), and A3) singulating the first substrate (1) with the at least one organic layer (2) into a plurality of functional layer stacks (10); B) providing a second substrate (5), which has a lower flexibility and a higher impermeability with respect to moisture and oxygen than the first substrate (1); and C) applying the at least one of the plurality of the functional layer stacks (10) with a surface (11) of the first substrate (1) remote from the organic layer (2) on the second substrate (5).
摘要:
An edge emitting semiconductor laser containing a plurality of monolithically integrated laser diodes (1, 2, 3). Each laser diode (1, 2, 3) contains an active zone (11, 12, 13), with the active zones (11, 12, 13) being in each case arranged between waveguide layers (6), the waveguide layers (6) in each case adjoining a cladding layer (7, 8) at a side remote from the active zone (11, 12, 13). The cladding layers (7, 8) comprise inner cladding layers (7), which are arranged above a bottommost active zone (11) and below a topmost active zone (13), and outer cladding layers (8) which are arranged below the bottommost active zone (11) or above the topmost active zone (13). The inner cladding layers (7) have a smaller thickness than the outer cladding layers (8).
摘要:
A radiation-emitting semiconductor component comprising a semiconductor body (3) with a first active zone (1) and a second active zone (2) arranged above the first active zone, the first active zone being provided for generating a radiation having a first wavelength λ1 (11) and the second active zone being provided for generating a radiation having a second wavelength λ2 (22), the radiation having the first wavelength λ1 being coherent and the radiation having the second wavelength λ2 being incoherent.
摘要:
A device comprising: a first substrate (1); a second substrate; at least one optoelectronic component (4) containing at least one organic material is arranged on the first substrate; the first substrate (1) and the second substrate (2) being arranged relative to one another in such a way that the optoelectronic component (4) is arranged between the first substrate (1) and the second substrate; a bonding material (3) is arranged between the first substrate (1) and the second substrate (2), said bonding material enclosing the optoelectronic component (4) in a frame type fashion and mechanically connecting the first and second substrates (1, 2) to one another; and wherein the bonding material (3) was softened by an exothermic chemical process of a reactive material (7) for mechanically connecting the substrates (1, 2).
摘要:
An arrangement (1) for holding a substrate (10) in a material deposition apparatus, which substrate (10) has a deposition side (10a) upon which material (M) is to be deposited, and which arrangement (1) comprises: a shadow mask (20) comprising a number of deposition openings (Di); a support structure (30) comprising a number of surround openings (Si); and a support structure holding means (6) for holding the support mask (30) and/or a substrate holding means (5) for holding the substrate (10), such that the support structure (30) is on the same side as the deposition side (10a) of the substrate (10), and the shadow mask (20) is positioned between the substrate (10) and the support structure (30) such that at least one deposition opening (Di) of the shadow mask (10) lies within a corresponding surround opening (Si) of the support structure (30).
摘要:
Production of an organic optoelectronic component comprising the following steps: A) providing a first substrate (1) having an active region (12) and a first connection region (11) surrounding said active region (12), wherein an organic, functional layer sequence (3) is formed in said active region (12), B) providing a second substrate (2) having a cover region (22) and a second connection region (21) surrounding said cover region (22), C) applying a first connection layer (4) made from a first glass solder material directly to said second substrate (2) in said second connection region (21), D) vitrifying (91) said first glass solder material of said first connection layer (4), E) applying a second connection layer (5) to said vitrified first connection layer (4) or to said first connection region (11) of said first substrate (1) and F) connecting said first substrate (1) to said second substrate (2) such that said second connection layer (5) connects said first connection region (11) to said first connection layer (4). The invention furthermore relates to an organic optoelectronic component.
摘要:
An edge emitting semiconductor laser containing a plurality of monolithically integrated laser diodes (1, 2, 3). Each laser diode (1, 2, 3) contains an active zone (11, 12, 13), with the active zones (11, 12, 13) being in each case arranged between waveguide layers (6), the waveguide layers (6) in each case adjoining a cladding layer (7, 8) at a side remote from the active zone (11, 12, 13). The cladding layers (7, 8) comprise inner cladding layers (7), which are arranged above a bottommost active zone (11) and below a topmost active zone (13), and outer cladding layers (8) which are arranged below the bottommost active zone (11) or above the topmost active zone (13). The inner cladding layers (7) have a smaller thickness than the outer cladding layers (8).
摘要:
A radiation-sensitive semiconductor body which has at least one radiation-absorbent active area (2) between at least two contact layers (6, 7) and which receives electromagnetic radiation in a wavelength range between λ1 and λ2 where λ2>λ1. A filter layer (5) is arranged between the active area (2) and a radiation input surface (9). The active area (2) detects electromagnetic radiation at a wavelength below λ2. The filter layer (5) absorbs electromagnetic radiation at a wavelength below λ1, and passes electromagnetic radiation at a wavelength above λ1.