-
公开(公告)号：US08603910B2
公开(公告)日：2013-12-10
申请号：US13349682
申请日：2012-01-13
申请人： Marco Koitz , Guenter Zieger , Christian Krenn , Franz Kleinbichler , Guenther Zoth , Karl Mayer
发明人： Marco Koitz , Guenter Zieger , Christian Krenn , Franz Kleinbichler , Guenther Zoth , Karl Mayer
IPC分类号： H01L21/44
CPC分类号： H01L21/02063 , H01L21/02178 , H01L21/02244 , H01L24/03 , H01L24/05 , H01L2224/02166 , H01L2224/0382 , H01L2224/04042 , H01L2224/05624 , H01L2224/85375 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00
摘要： In various embodiments, a method of processing a contact pad may include providing a contact pad, a topmost layer of the contact pad containing aluminum or an aluminum alloy, at least part of the topmost layer of the contact pad being exposed; subjecting the contact pad to a thermally activated atmosphere containing water or reactive components of water.
摘要翻译： 在各种实施例中，处理接触焊盘的方法可包括提供接触焊盘，包含铝或铝合金的接触焊盘的最上层，接触焊盘的最上层的至少一部分被暴露; 使接触垫经受含水或反应活性成分的热活化气氛。
-
公开(公告)号：US20130180945A1
公开(公告)日：2013-07-18
申请号：US13349682
申请日：2012-01-13
申请人： Marco Koitz , Guenter Zieger , Christian Krenn , Franz Kleinbichler , Guenther Zoth , Karl Mayer
发明人： Marco Koitz , Guenter Zieger , Christian Krenn , Franz Kleinbichler , Guenther Zoth , Karl Mayer
CPC分类号： H01L21/02063 , H01L21/02178 , H01L21/02244 , H01L24/03 , H01L24/05 , H01L2224/02166 , H01L2224/0382 , H01L2224/04042 , H01L2224/05624 , H01L2224/85375 , H01L2924/12042 , H01L2924/181 , H01L2924/00014 , H01L2924/00
摘要： In various embodiments, a method of processing a contact pad may include providing a contact pad, a topmost layer of the contact pad containing aluminum or an aluminum alloy, at least part of the topmost layer of the contact pad being exposed; subjecting the contact pad to a thermally activated atmosphere containing water or reactive components of water.
摘要翻译： 在各种实施例中，处理接触焊盘的方法可包括提供接触焊盘，包含铝或铝合金的接触焊盘的最上层，接触焊盘的最上层的至少一部分被暴露; 使接触垫经受含水或反应活性成分的热活化气氛。
-
3.发明授权公开(公告)号：US08785034B2
公开(公告)日：2014-07-22
申请号：US13300732
申请日：2011-11-21
申请人： Magdalena Forster , Katharina Schmut , Bernhard Goller , Guenter Zieger , Michael Sorger , Philemon Schweizer , Michael Sternad
发明人： Magdalena Forster , Katharina Schmut , Bernhard Goller , Guenter Zieger , Michael Sorger , Philemon Schweizer , Michael Sternad
IPC分类号： H01M10/052 , H01L23/48
CPC分类号： H01M10/0525 , H01L27/06 , H01L2224/48091 , H01L2224/48472 , H01L2924/1461 , H01M4/386 , H01M4/66 , H01M4/70 , H01M6/40 , H01M10/0436 , H01M10/049 , H01M10/052 , H01M10/0585 , H01M10/425 , H01M2220/30 , H01M2250/30 , Y02B90/18 , Y02E60/122 , Y02P70/54 , Y10T29/49108 , Y10T29/49115 , H01L2924/00014 , H01L2924/00
摘要： A lithium battery includes a cathode, an anode including a component made of silicon, a separator element disposed between the cathode and the anode, an electrolyte, and a substrate. The anode is disposed over the substrate or the anode is integrally formed with the substrate.
摘要翻译： 锂电池包括阴极，包括由硅制成的部件的阳极，设置在阴极和阳极之间的隔膜元件，电解质和基板。 阳极设置在衬底上，或者阳极与衬底一体地形成。
-
4.发明申请公开(公告)号：US20130128488A1
公开(公告)日：2013-05-23
申请号：US13300732
申请日：2011-11-21
申请人： Magdalena Forster , Katharina Schmut , Bernhard Goller , Guenter Zieger , Michael Sorger , Philemon Schweizer , Michael Sternad
发明人： Magdalena Forster , Katharina Schmut , Bernhard Goller , Guenter Zieger , Michael Sorger , Philemon Schweizer , Michael Sternad
CPC分类号： H01M10/0525 , H01L27/06 , H01L2224/48091 , H01L2224/48472 , H01L2924/1461 , H01M4/386 , H01M4/66 , H01M4/70 , H01M6/40 , H01M10/0436 , H01M10/049 , H01M10/052 , H01M10/0585 , H01M10/425 , H01M2220/30 , H01M2250/30 , Y02B90/18 , Y02E60/122 , Y02P70/54 , Y10T29/49108 , Y10T29/49115 , H01L2924/00014 , H01L2924/00
摘要： A lithium battery includes a cathode, an anode including a component made of silicon, a separator element disposed between the cathode and the anode, an electrolyte, and a substrate. The anode is disposed over the substrate or the anode is integrally formed with the substrate.
摘要翻译： 锂电池包括阴极，包括由硅制成的部件的阳极，设置在阴极和阳极之间的隔膜元件，电解质和基板。 阳极设置在衬底上，或者阳极与衬底一体地形成。
-
5.发明授权Method for fabricating a cavity structure, for fabricating a cavity structure for a semiconductor structure and a semiconductor microphone fabricated by the same 有权用于制造用于半导体结构的空腔结构的腔体结构的制造方法和由其制造的半导体麦克风公开(公告)号：US08575037B2
公开(公告)日：2013-11-05
申请号：US12979104
申请日：2010-12-27
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H04R23/00 , B81B2201/0257 , B81B2203/0118 , B81B2203/0315 , B81C1/00047 , B81C1/00936 , B81C2201/0109 , G01L9/0042 , H04R19/005 , H04R31/006
摘要： Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed.
摘要翻译： 实施例示出了用于制造空腔结构的方法，半导体结构，用于半导体器件的腔结构和由其制造的半导体麦克风。 在一些实施例中，用于制造空腔结构的方法包括提供第一层，在第一层上沉积碳层，至少部分地覆盖碳层与第二层以限定空腔结构，通过干法蚀刻碳 在第一和第二层之间形成空腔结构。
-
6.发明申请公开(公告)号：US20120161257A1
公开(公告)日：2012-06-28
申请号：US12979104
申请日：2010-12-27
IPC分类号： H01L29/84 , H01L21/302
CPC分类号： H04R23/00 , B81B2201/0257 , B81B2203/0118 , B81B2203/0315 , B81C1/00047 , B81C1/00936 , B81C2201/0109 , G01L9/0042 , H04R19/005 , H04R31/006
摘要： Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed.
摘要翻译： 实施例示出了用于制造空腔结构的方法，半导体结构，用于半导体器件的腔结构和由其制造的半导体麦克风。 在一些实施例中，用于制造空腔结构的方法包括提供第一层，在第一层上沉积碳层，至少部分地覆盖碳层与第二层以限定空腔结构，通过干法蚀刻碳 在第一和第二层之间形成空腔结构。
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.023 秒)
