公开(公告)号：US20120068356A1

公开(公告)日：2012-03-22

申请号：US13199748

申请日：2011-09-07

申请人： Marcus Ahles ,  Jochen Reinmuth ,  Hubert Benzel ,  Simon Armbruster

发明人： Marcus Ahles ,  Jochen Reinmuth ,  Hubert Benzel ,  Simon Armbruster

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/76898 ,  B81B2201/0264 ,  B81C1/00095 ,  H01L21/764 ,  H01L21/7682 ,  H01L23/481 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2924/1461 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： A component having a via includes: (i) a first layer having a first via portion, a first trench structure, and a first surrounding layer portion, the first via portion being separated by the first trench structure from the first surrounding layer portion; (ii) a second layer having a second via portion, a second trench structure, and a second surrounding layer portion, the second via portion being separated by the second trench structure from the second surrounding layer portion; (iii) an insulation layer disposed between the first and the second layer, the insulation layer having an opening so that the first and the second via portions of the first and the second layers are directly connected to one another in the region of the opening. The first via portion and the second surrounding layer portion at least partially overlap.

摘要翻译： 具有通孔的部件包括：（i）具有第一通孔部分，第一沟槽结构和第一环绕层部分的第一层，所述第一通孔部分由所述第一沟槽结构与所述第一环绕层部分分离; （ii）具有第二通孔部分，第二沟槽结构和第二包围层部分的第二层，所述第二通孔部分由所述第二沟槽结构与所述第二环绕层部分分离; （iii）设置在第一和第二层之间的绝缘层，绝缘层具有开口，使得第一和第二层的第一和第二通孔部分在开口区域中彼此直接连接。 第一通孔部分和第二周围层部分至少部分重叠。

公开(公告)号：US09082831B2

公开(公告)日：2015-07-14

申请号：US13199748

申请日：2011-09-07

申请人： Marcus Ahles ,  Jochen Reinmuth ,  Hubert Benzel ,  Simon Armbruster

发明人： Marcus Ahles ,  Jochen Reinmuth ,  Hubert Benzel ,  Simon Armbruster

IPC分类号： H01L23/48 ,  H01L21/768 ,  B81C1/00 ,  H01L21/764

CPC分类号： H01L21/76898 ,  B81B2201/0264 ,  B81C1/00095 ,  H01L21/764 ,  H01L21/7682 ,  H01L23/481 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2924/1461 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： A component having a via includes: (i) a first layer having a first via portion, a first trench structure, and a first surrounding layer portion, the first via portion being separated by the first trench structure from the first surrounding layer portion; (ii) a second layer having a second via portion, a second trench structure, and a second surrounding layer portion, the second via portion being separated by the second trench structure from the second surrounding layer portion; (iii) an insulation layer disposed between the first and the second layer, the insulation layer having an opening so that the first and the second via portions of the first and the second layers are directly connected to one another in the region of the opening. The first via portion and the second surrounding layer portion at least partially overlap.

摘要翻译： 具有通孔的部件包括：（i）具有第一通孔部分，第一沟槽结构和第一环绕层部分的第一层，所述第一通孔部分由所述第一沟槽结构与所述第一环绕层部分分离; （ii）具有第二通孔部分，第二沟槽结构和第二包围层部分的第二层，所述第二通孔部分由所述第二沟槽结构与所述第二环绕层部分分离; （iii）设置在第一和第二层之间的绝缘层，绝缘层具有开口，使得第一和第二层的第一和第二通孔部分在开口区域中彼此直接连接。 第一通孔部分和第二周围层部分至少部分重叠。

公开(公告)号：US20110147864A1

公开(公告)日：2011-06-23

申请号：US12737037

申请日：2009-04-21

申请人： Torsten Kramer ,  Marcus Ahles ,  Armin Grundmann ,  Kathrin Knese ,  Hubert Benzel ,  Gregor Schuermann ,  Simon Armbruster

发明人： Torsten Kramer ,  Marcus Ahles ,  Armin Grundmann ,  Kathrin Knese ,  Hubert Benzel ,  Gregor Schuermann ,  Simon Armbruster

IPC分类号： H01L21/302 ,  H01L29/84

CPC分类号： B81C1/00158 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C2201/0115 ,  B81C2201/0136 ,  G01L9/0042

摘要： A method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate includes: n-doping at least one contiguous lattice-type area of a p-doped silicon substrate surface; porously etching a substrate area beneath the n-doped lattice structure; producing a cavity in this substrate area beneath the n-doped lattice structure; growing a first monocrystalline silicon epitaxial layer on the n-doped lattice structure; at least one opening in the n-doped lattice structure being dimensioned in such a way that it is not closed by the growing first epitaxial layer but instead forms an access opening to the cavity; an oxide layer being created on the cavity wall; a rear access to the cavity being created, the oxide layer on the cavity wall acting as an etch stop layer; and the oxide layer being removed in the area of the cavity.

摘要翻译： 用于制造从衬底的后部进入的微机械膜结构的方法包括：n掺杂p掺杂硅衬底表面的至少一个连续的格子型区域; 在n掺杂的晶格结构下面蚀刻衬底区域; 在该n型掺杂晶格结构下面的该衬底区域中产生空腔; 在n掺杂晶格结构上生长第一单晶硅外延层; n掺杂晶格结构中的至少一个开口的尺寸设计成使得其不被生长的第一外延层闭合​​，而是形成到腔的通路口; 在空腔壁上形成氧化物层; 产生到空腔的后部通路，空腔壁上的氧化层用作蚀刻停止层; 并且在空腔的区域中去除氧化物层。

公开(公告)号：US08519494B2

公开(公告)日：2013-08-27

申请号：US12737037

申请日：2009-04-21

申请人： Torsten Kramer ,  Marcus Ahles ,  Armin Grundmann ,  Kathrin Knese ,  Hubert Benzel ,  Gregor Schuermann ,  Simon Armbruster

发明人： Torsten Kramer ,  Marcus Ahles ,  Armin Grundmann ,  Kathrin Knese ,  Hubert Benzel ,  Gregor Schuermann ,  Simon Armbruster

IPC分类号： G01P15/08

CPC分类号： B81C1/00158 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C2201/0115 ,  B81C2201/0136 ,  G01L9/0042

摘要： A method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate includes: n-doping at least one contiguous lattice-type area of a p-doped silicon substrate surface; porously etching a substrate area beneath the n-doped lattice structure; producing a cavity in this substrate area beneath the n-doped lattice structure; growing a first monocrystalline silicon epitaxial layer on the n-doped lattice structure; at least one opening in the n-doped lattice structure being dimensioned in such a way that it is not closed by the growing first epitaxial layer but instead forms an access opening to the cavity; an oxide layer being created on the cavity wall; a rear access to the cavity being created, the oxide layer on the cavity wall acting as an etch stop layer; and the oxide layer being removed in the area of the cavity.

摘要翻译： 用于制造从衬底的后部进入的微机械膜结构的方法包括：n掺杂p掺杂硅衬底表面的至少一个连续的格子型区域; 在n掺杂的晶格结构下面蚀刻衬底区域; 在该n型掺杂晶格结构下面的该衬底区域中产生空腔; 在n掺杂晶格结构上生长第一单晶硅外延层; n掺杂晶格结构中的至少一个开口的尺寸设计成使得其不被生长的第一外延层闭合​​，而是形成到腔的通路口; 在空腔壁上形成氧化物层; 产生到空腔的后部通路，空腔壁上的氧化层用作蚀刻停止层; 并且在空腔的区域中去除氧化物层。

公开(公告)号：US08485041B2

公开(公告)日：2013-07-16

申请号：US12737966

申请日：2009-07-10

申请人： Marcus Ahles ,  Hubert Benzel ,  Heribert Weber

发明人： Marcus Ahles ,  Hubert Benzel ,  Heribert Weber

IPC分类号： G01L7/00 ,  H01L29/84

CPC分类号： G01L9/0045 ,  G01L13/025

摘要： A sensor system, e.g., a pressure sensor system, includes a substrate having at least one trench on a first side. The trench is provided for forming a first diaphragm region on a second side opposite from the first side. In addition, a second diaphragm region and a cavern are integrated into the material of the first diaphragm region.

摘要翻译： 传感器系统，例如压力传感器系统，包括在第一侧具有至少一个沟槽的衬底。 沟槽被设置用于在与第一侧相对的第二侧上形成第一膜片区域。 此外，第二隔膜区域和洞穴被整合到第一隔膜区域的材料中。

公开(公告)号：US08146439B2

公开(公告)日：2012-04-03

申请号：US12887200

申请日：2010-09-21

申请人： Marcus Ahles ,  Hubert Benzel

发明人： Marcus Ahles ,  Hubert Benzel

IPC分类号： G01L9/00 ,  H05K3/00

CPC分类号： G01L19/147 ,  G01L19/148 ,  Y10T29/49124

摘要： A sensor system, in particular a pressure sensor system, having a substrate having a main extension plane, the substrate having at least one trench on a first side, and the trench being provided to produce a diaphragm area on a second side of the substrate diametrically opposite to the first side perpendicularly to the main extension plane, and a decoupling element further being integrated in the material of the diaphragm area.

摘要翻译： 传感器系统，特别是压力传感器系统，其具有具有主延伸平面的基板，该基板在第一侧上具有至少一个沟槽，并且该沟槽被设置成在直径方向上在基板的第二侧上产生隔膜区域 与第一侧垂直于主延伸平面相对，以及去耦元件进一步集成在隔膜区域的材料中。

公开(公告)号：US08429977B2

公开(公告)日：2013-04-30

申请号：US13035522

申请日：2011-02-25

申请人： Marcus Ahles ,  Hubert Benzel

发明人： Marcus Ahles ,  Hubert Benzel

IPC分类号： G01L9/06 ,  G01L7/00 ,  H01C17/28

CPC分类号： G01L9/0055 ,  B81B3/0081 ,  B81B2201/0264 ,  Y10T29/49103

摘要： A very robust sensor element for an absolute-pressure measurement is described, which is suitable for high temperatures and able to be miniaturized to a large extent. The micromechanical pressure-sensor element includes a sensor diaphragm having a rear-side pressure connection and at least one dielectrically insulated piezo resistor for signal acquisition. Furthermore, the pressure-sensor element has a front-side reference volume, which is sealed by a cap structure spanning the sensor diaphragm. The cap structure is realized as thin-film structure.

摘要翻译： 描述了用于绝对压力测量的非常坚固的传感器元件，其适用于高温并能够在很大程度上小型化。 微机械压力传感器元件包括具有后侧压力连接的传感器膜片和用于信号采集的至少一个介电绝缘压电电阻器。 此外，压力传感器元件具有前侧参考体积，其由跨越传感器膜片的盖结构密封。 盖结构实现为薄膜结构。

公开(公告)号：US20120073379A1

公开(公告)日：2012-03-29

申请号：US13138674

申请日：2010-02-01

申请人： Marcus Ahles ,  Hubert Benzel

发明人： Marcus Ahles ,  Hubert Benzel

IPC分类号： G01L7/08

CPC分类号： G01L9/0042 ,  G01L7/082

摘要： A sensor system for detecting high pressures includes a micromechanical sensor element which is situated on a support and is mounted via this support. A diaphragm is formed in the upper surface of the sensor element, the diaphragm spanning a cavern having a rear opening. The support has a passage opening and is connected to the rear side of the sensor element in such a way that the passage opening opens into the rear opening of the cavern. An annular recess is formed in the rear side of the sensor element, the annular recess being situated above the edge area of the passage opening, so that the joining surface between the sensor element and the support does not extend to the edge of the passage opening.

摘要翻译： 用于检测高压的传感器系统包括微机械传感器元件，其位于支撑件上并且经由该支撑件安装。 在传感器元件的上表面形成隔膜，隔膜横跨具有后开口的洞穴。 支撑件具有通道开口并且以使得通道开口通向洞穴的后开口的方式连接到传感器元件的后侧。 在传感器元件的后侧形成环形凹部，环形凹部位于通道开口的边缘区域上方，使得传感器元件和支撑件之间的接合表面不延伸到通道开口的边缘 。

公开(公告)号：US20110259109A1

公开(公告)日：2011-10-27

申请号：US12737966

申请日：2009-07-10

申请人： Marcus Ahles ,  Hubert Benzel ,  Heribert Weber

发明人： Marcus Ahles ,  Hubert Benzel ,  Heribert Weber

IPC分类号： G01L9/06 ,  H01L21/02 ,  H01L29/84

CPC分类号： G01L9/0045 ,  G01L13/025

摘要： A sensor system, e.g., a pressure sensor system, includes a substrate having at least one trench on a first side. The trench is provided for forming a first diaphragm region on a second side opposite from the first side. In addition, a second diaphragm region and a cavern are integrated into the material of the first diaphragm region.

摘要翻译： 传感器系统，例如压力传感器系统，包括在第一侧具有至少一个沟槽的衬底。 沟槽被设置用于在与第一侧相对的第二侧上形成第一膜片区域。 此外，第二隔膜区域和洞穴被整合到第一隔膜区域的材料中。

公开(公告)号：US20110209555A1

公开(公告)日：2011-09-01

申请号：US13035522

申请日：2011-02-25

申请人： Marcus Ahles ,  Hubert Benzel

发明人： Marcus Ahles ,  Hubert Benzel

IPC分类号： G01L9/06 ,  H01C17/28

CPC分类号： G01L9/0055 ,  B81B3/0081 ,  B81B2201/0264 ,  Y10T29/49103

摘要： A very robust sensor element for an absolute-pressure measurement is described, which is suitable for high temperatures and able to be miniaturized to a large extent. The micromechanical pressure-sensor element includes a sensor diaphragm having a rear-side pressure connection and at least one dielectrically insulated piezo resistor for signal acquisition. Furthermore, the pressure-sensor element has a front-side reference volume, which is sealed by a cap structure spanning the sensor diaphragm. The cap structure is realized as thin-film structure.

摘要翻译： 描述了用于绝对压力测量的非常坚固的传感器元件，其适用于高温并能够在很大程度上小型化。 微机械压力传感器元件包括具有后侧压力连接的传感器膜片和用于信号采集的至少一个介电绝缘压电电阻器。 此外，压力传感器元件具有前侧参考体积，其由跨越传感器膜片的盖结构密封。 盖结构实现为薄膜结构。