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1.发明授权公开(公告)号：US06555830B1
公开(公告)日：2003-04-29
申请号：US09638376
申请日：2000-08-15
申请人： Marian Mankos , Tai-Hon Philip Chang , Kim Y. Lee , Ming Yu
发明人： Marian Mankos , Tai-Hon Philip Chang , Kim Y. Lee , Ming Yu
IPC分类号： G21G500
CPC分类号： H01J37/073 , G01N23/225 , H01J2237/06316 , H01J2237/0653 , H01J2237/24514 , H01J2237/30472
摘要： The microcolumn configuration of the present invention provides for emission noise reduction through the use of a screened beam-limiting aperture for monitoring the electron beam current. This novel approach utilizes a screening aperture located between the emitter and the beam-limiting aperture, which screening aperture collects most of the current transmitted by the first lens of the electron beam column. In order to achieve good noise suppression, the screening aperture should let through only the portion of the beam where the electrons are correlated. The current collected by the beam-limiting aperture is then used as a reference signal in the image processing. The elimination of this noise increases the detection sensitivity of an inspection tool. This reduces the total number of required pixels and therefore increases the throughput of the tool.
摘要翻译： 本发明的微柱结构通过使用用于监测电子束电流的屏蔽光束限制孔来提供发射噪声降低。 这种新颖的方法利用位于发射极和光束限制孔之间的屏蔽孔，该屏蔽孔收集由电子束柱的第一透镜传输的大部分电流。 为了实现良好的噪声抑制，屏蔽孔径应仅通过电子相关的光束部分。 然后由光束限制孔收集的电流用作图像处理中的参考信号。 消除这种噪声会增加检测工具的检测灵敏度。 这减少了所需像素的总数，因此增加了工具的吞吐量。
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2.发明授权Method of forming gated photocathode for controlled single and multiple electron beam emission 失效形成用于受控单电子束和多电子束发射的门控光电阴极的方法公开(公告)号：US06220914B1
公开(公告)日：2001-04-24
申请号：US09449201
申请日：1999-11-24
IPC分类号： H01J902
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F7/70375 , H01J1/34 , H01J37/073 , H01J2237/31779
摘要： A photocathode having a gate electrode so that modulation of the resulting electron beam is accomplished independently of the laser beam. The photocathode includes a transparent substrate, a photoemitter, and an electrically separate gate electrode surrounding an emission region of the photoemitter. The electron beam emission from the emission region is modulated by voltages supplied to the gate electrode. In addition, the gate electrode may have multiple segments that are capable of shaping the electron beam in response to voltages supplied individually to each of the multiple segments.
摘要翻译： 具有栅极的光电阴极，使得所得电子束的调制独立于激光束而实现。 光电阴极包括透明基板，光电发射器和围绕发光体的发射区域的电分离的栅电极。 来自发射区域的电子束发射由供给栅电极的电压调制。 此外，栅电极可以具有多个段，其能够响应于单独提供给多个段中的每一个的电压而使电子束成形。
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3.发明授权Gated photocathode for controlled single and multiple electron beam emission 失效用于受控单电子束和多电子束发射的门控光电阴极公开(公告)号：US06376985B2
公开(公告)日：2002-04-23
申请号：US09052903
申请日：1998-03-31
IPC分类号： H01J4006
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F7/70375 , H01J1/34 , H01J37/073 , H01J2237/31779
摘要： A photocathode having a gate electrode so that modulation of the resulting electron beam is accomplished independently of the laser beam. The photocathode includes a transparent substrate, a photoemitter, and an electrically separate gate electrode surrounding an emission region of the photoemitter. The electron beam emission from the emission region is modulated by voltages supplied to the gate electrode. In addition, the gate electrode may have multiple segments that are capable of shaping the electron beam in response to voltages supplied individually to each of the multiple segments.
摘要翻译： 具有栅极的光电阴极，使得所得电子束的调制独立于激光束而实现。 光电阴极包括透明基板，光电发射器和围绕发光体的发射区域的电分离的栅电极。 来自发射区域的电子束发射由供给栅电极的电压调制。 此外，栅电极可以具有多个段，其能够响应于单独提供给多个段中的每一个的电压而使电子束成形。
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公开(公告)号：US06376984B1
公开(公告)日：2002-04-23
申请号：US09364274
申请日：1999-07-29
IPC分类号： H01J3150
CPC分类号： B82Y10/00 , H01J1/34 , H01J37/073 , H01J2201/02 , H01J2237/31779
摘要： A photocathode emitter as a source of electron beams, having an optically transmissive substrate patterned to define a protrusion, heat conducting material occupying the space surrounding the protrusion, and a photoemitter layer over the protrusion. The photoemitter is positioned on the side of the substrate opposite the surface on which the illumination is incident, and has an irradiation region at the contact with the top of the protrusion patterned on the substrate, and an emission region opposite the irradiation region, these regions being defined by the path of the illumination. The heat conducting material around the protrusion conducts heat away from this focused region of illumination on the photocathode to allow higher currents to be achieved from the photocathode and thus permits higher throughput rates in applications including electron beam lithography. In one version, the photocathode is fabricated using microfabrication techniques, to achieve a small emission spot size.
摘要翻译： 作为电子束源的光电阴极发射体，具有图案化以限定突起的光学透射基底，占据突起周围的空间的导热材料，以及突出部上的光电发射体层。 光发射器位于与照射入射的表面相对的一侧上，并且具有与在基板上图案化的突起的顶部接触的照射区域和与照射区域相对的发射区域，这些区域 由照明的路径定义。 突起周围的导热材料将热量从该聚焦光照射区域传导到光电阴极上，以允许从光电阴极获得更高的电流，从而在包括电子束光刻的应用中允许较高的生产率。 在一个版本中，使用微细加工技术制造光电阴极，以实现小的发射点尺寸。
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公开(公告)号：US06281508B1
公开(公告)日：2001-08-28
申请号：US09246573
申请日：1999-02-08
IPC分类号： G21K108
CPC分类号： B82Y15/00 , H01J9/18 , H01J37/12 , H01J2237/1205
摘要： A method and the associated apparatus for alignment and assembly of microlenses and microcolumns in which aligning structures such as rigid fibers are used to precisely align multiple microlens components. Alignment openings are formed in the microlens components and standard optical fibers are threaded through the openings in each microlens component as they are stacked. The fibers provide sufficient stiffness and stability to the structure to precisely align the apertures of the microlens components and thereby allow for increased assembly efficiency over traditional microlens and microcolumn bonding techniques.
摘要翻译： 用于对准和组装微透镜和微柱的方法和相关联的装置，其中使用诸如刚性纤维的对准结构来精确对准多个微透镜组件。 在微透镜部件中形成对准开口，并且当它们堆叠时，标准光纤穿过每个微透镜部件中的开口。 纤维为结构提供足够的刚度和稳定性，以精确地对准微透镜部件的孔，从而相对于传统的微透镜和微柱接合技术允许提高组装效率。
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公开(公告)号：US06195214B1
公开(公告)日：2001-02-27
申请号：US09364822
申请日：1999-07-30
IPC分类号： G02B702
CPC分类号： H01J37/12 , H01J9/18 , H01J2237/1205
摘要： A method for forming microcolumns in which laser spot welding bonds the multiple layers of an electron beam microcolumn. A silicon microlens is laser spot welded to a glass insulation layer by focusing a laser through the insulation layer onto the silicon microlens. The glass layer is transparent to the laser, allowing all of the energy to be absorbed by the silicon. This causes the silicon to heat, which, in turn, heats the adjacent surface of the glass insulation layer creating a micro-weld between the silicon and glass. The insulation layer includes a portion which protrudes beyond the edge of the first microlens so that when a second microlens is attached to the opposite side of the insulation layer, the second microlens can be laser spot welded to the protruding portion of the insulation layer by focusing a laser through the protruding portion of the insulation layer to heat the second microlens.
摘要翻译： 一种形成微柱的方法，其中激光点焊结合电子束微柱的多层。 将硅微透镜通过将激光通过绝缘层聚焦到硅微透镜上而被激光点焊到玻璃绝缘层。 玻璃层对于激光是透明的，允许所有的能量被硅吸收。 这导致硅加热，这进而加热玻璃绝缘层的相邻表面，从而在硅和玻璃之间形成微焊缝。 绝缘层包括突出超过第一微透镜的边缘的部分，使得当第二微透镜附着到绝缘层的相对侧时，第二微透镜可以通过聚焦被激光点焊到绝缘层的突出部分 激光穿过绝缘层的突出部分以加热第二微透镜。
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公开(公告)号：US06717146B2
公开(公告)日：2004-04-06
申请号：US09866361
申请日：2001-05-24
IPC分类号： G03G1300
CPC分类号： H01J37/244 , G01N23/225
摘要： A compact detector for secondary and backscattered electrons in a scanning electron beam system includes a microchannel plate detector and a solid state detector connected in a tandem manner. The detector offers large bandwidth and high dynamic range. The detector can be used for article inspection, lithography, metrology, and other related applications. The compactness of the detector makes it ideally suited for utilization in a miniature electron beam column, such as a microcolumn.
摘要翻译： 用于扫描电子束系统中的二次和反向散射电子的紧凑型检测器包括微通道板检测器和以串联方式连接的固态检测器。 该检测器提供大带宽和高动态范围。 检测器可用于物品检查，光刻，计量和其他相关应用。 检测器的紧凑性使其非常适用于微型电子束柱（如微柱）的应用。
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8.发明授权Method and apparatus for direct writing of semiconductor die using microcolumn array 失效使用微柱阵列直接写入半导体管芯的方法和装置
公开(公告)号：US6145438A
公开(公告)日：2000-11-14
申请号：US45490
申请日：1998-03-20
IPC分类号： G03F7/20 , H01J37/305 , H01J37/317 , H01L21/027 , B41C1/05 , G03C5/00 , H01J37/304
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/2065 , H01J37/3177
摘要： In electron beam lithography, a lithography system uses multiple microcolumns in an array to increase throughput for direct writing of semiconductor wafers. The mismatch between the microcolumn array and the semiconductor die periodicity is resolved by using only one microcolumn to scan each individual die. This is accomplished by assuring that the stage carrying the semiconductor wafer moves a total distance in each of the X and Y directions which is greater than the pitch between adjacent die. Hence each die is scanned by only a single microcolumn although at possibly different times during the total stage motion.
摘要翻译： 在电子束光刻中，光刻系统使用阵列中的多个微柱来增加用于直接写入半导体晶片的生产量。 通过仅使用一个微柱来扫描每个单独的管芯来解决微柱阵列与半导体管芯周期性之间的不匹配。 这是通过确保携带半导体晶片的载台在X和Y方向中的每一个上移动大于相邻模具之间的间距的总距离来实现的。 因此，尽管在整个阶段运动期间可能不同的时间，每个管芯仅由单个微柱扫描。
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公开(公告)号：US6008060A
公开(公告)日：1999-12-28
申请号：US60496
申请日：1998-04-15
申请人： Tai-Hon Philip Chang , Hoseob Kim
发明人： Tai-Hon Philip Chang , Hoseob Kim
IPC分类号： G03F7/20 , H01J37/304 , H01L21/027 , H01L21/66 , H01L21/00
CPC分类号： H01J37/3045 , H01J2237/30438 , Y10S438/949 , Y10S438/975
摘要： For electron beam wafer or mask processing, a registration mark is capacitively coupled to the top surface of an overlying resist layer on a substrate to form a voltage potential on the surface of the resist layer directly over the registration mark. The registration mark is directly connected to an electrical lead that produces an AC voltage on the registration mark, which is capacitively induced on the surface of the resist layer. Alternatively, the registration mark itself is capacitively coupled to a conductive plate placed on the bottom surface of the semiconductor substrate. An AC voltage is then applied to the conductive plate that induces a charge on the registration mark, which then capacitively induces a charge on the surface of the layer of resist. An electron beam scanning across the surface of the resist layer generates secondary electrons. The secondary electrons have a low energy and are affected by the voltage potential created at the surface of the resist layer. Thus, by detecting the secondary electron signal generated by the electron beam the voltage potential on the surface of the resist layer is detected in contrast with surrounding areas. Consequently, the registration mark is detected by an electron beam, such as a low energy electron beam produced for example by an electron beam microcolumn, that does not have sufficient energy to penetrate the resist layer.
摘要翻译： 对于电子束晶片或掩模处理，对准标记电容耦合到衬底上的覆盖抗蚀剂层的顶表面，以在抗蚀剂层的表面上直接在对准标记上形成电压电位。 对准标记直接连接到在引导标记上产生交流电压的电导线，其在抗蚀剂层的表面上电容性地感应。 或者，对准标记本身电容耦合到放置在半导体衬底的底表面上的导电板。 然后将AC电压施加到导电板上，该导电板在对准标记上引起电荷，其然后电容性地在抗蚀剂层的表面上感应电荷。 跨抗蚀剂层表面的电子束扫描产生二次电子。 二次电子具有低能量并且受到在抗蚀剂层表面产生的电压电位的影响。 因此，通过检测由电子束产生的二次电子信号，与周围区域相比，检测抗蚀剂层表面上的电压电位。 因此，通过电子束（例如由电子束微柱产生的低能量电子束）检测对准标记，其不具有足够的能量穿透抗蚀剂层。
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公开(公告)号：US06127738A
公开(公告)日：2000-10-03
申请号：US422921
申请日：1999-10-21
申请人： Tai-Hon Philip Chang , Hoseob Kim
发明人： Tai-Hon Philip Chang , Hoseob Kim
IPC分类号： G03F7/20 , H01J37/304 , H01L21/027 , H01L21/66 , H01L23/544 , G01B11/02
CPC分类号： H01J37/3045 , H01J2237/30438 , Y10S438/949 , Y10S438/975
摘要： For electron beam wafer or mask processing, a registration mark is capacitively coupled to the top surface of an overlying resist layer on a substrate to form a voltage potential on the surface of the resist layer directly over the registration mark. The registration mark is directly connected to an electrical lead that produces an AC voltage on the registration mark, which is capacitively induced on the surface of the resist layer. Alternatively, the registration mark itself is capacitively coupled to a conductive plate placed on the bottom surface of the semiconductor substrate. An AC voltage is then applied to the conductive plate that induces a charge on the registration mark, which then capacitively induces a charge on the surface of the layer of resist. An electron beam scanning across the surface of the resist layer generates secondary electrons. The secondary electrons have a low energy and are affected by the voltage potential created at the surface of the resist layer. Thus, by detecting the secondary electron signal generated by the electron beam the voltage potential on the surface of the resist layer is detected in contrast with surrounding areas. Consequently, the registration mark is detected by an electron beam, such as a low energy electron beam produced for example by an electron beam microcolumn, that does not have sufficient energy to penetrate the resist layer.
摘要翻译： 对于电子束晶片或掩模处理，对准标记电容耦合到衬底上的覆盖抗蚀剂层的顶表面，以在抗蚀剂层的表面上直接在对准标记上形成电压电位。 对准标记直接连接到在引导标记上产生交流电压的电导线，其在抗蚀剂层的表面上电容性地感应。 或者，对准标记本身电容耦合到放置在半导体衬底的底表面上的导电板。 然后将AC电压施加到导电板上，该导电板在对准标记上引起电荷，其然后电容性地在抗蚀剂层的表面上感应电荷。 跨抗蚀剂层表面的电子束扫描产生二次电子。 二次电子具有低能量并且受到在抗蚀剂层表面产生的电压电位的影响。 因此，通过检测由电子束产生的二次电子信号，与周围区域相比，检测抗蚀剂层表面上的电压电位。 因此，通过电子束（例如由电子束微柱产生的低能量电子束）检测对准标记，其不具有足够的能量穿透抗蚀剂层。
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