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1.发明授权Etch improved resist systems containing acrylate (or methacrylate) silane monomers 有权蚀刻改进的含有丙烯酸酯（或甲基丙烯酸酯）硅烷单体的抗蚀剂体系公开(公告)号：US06586156B2
公开(公告)日：2003-07-01
申请号：US09907392
申请日：2001-07-17
申请人： Marie Angelopoulos , Wu-Song Huang , Dai Junyan , Ranee W. Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau , Karen E. Petrillo
发明人： Marie Angelopoulos , Wu-Song Huang , Dai Junyan , Ranee W. Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau , Karen E. Petrillo
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , G03F7/0392 , Y10S430/106
摘要： A chemically amplified (CA) photoresist system wherein a terpolymer containing ketal/phenolic/silicon based sidechains is provided. Among other things, the terpolymers provide for improved bake technologies. In another aspect a process for lithographic treatment of a substrate by means of ketal/phenolic/silicon based compositions and corresponding processes for the production of an object, particularly an electronic component are provided.
摘要翻译： 一种化学放大（CA）光刻胶体系，其中提供含有缩酮/酚/硅基侧链的三元共聚物。 除其他外，三元共聚物可提供改进的烘烤技术。 在另一方面，提供了通过缩酮/酚/硅基组合物对基材进行光刻处理的方法和用于制备物体，特别是电子部件的相应方法。
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公开(公告)号：US06420084B1
公开(公告)日：2002-07-16
申请号：US09602136
申请日：2000-06-23
申请人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau
发明人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau
IPC分类号： G03F7004
CPC分类号： G03F7/0757
摘要： The invention provides improved resist compositions and lithographic methods using the resist compositions of the invention. The resist compositions of the invention are acid-catalyzed resists which are characterized by the presence of an SiO-containing polymer. The invention also encompasses methods of forming patterned material layers (especially conductive, semiconductive, or magnetic material structures) using the combination of the SiO-containing resist and a halogen compound-containing pattern transfer etchant where the halogen is Cl, Br or I.
摘要翻译： 本发明提供使用本发明的抗蚀剂组合物的改进的抗蚀剂组合物和平版印刷方法。 本发明的抗蚀剂组合物是酸催化的抗蚀剂，其特征在于存在含SiO的聚合物。 本发明还包括使用含SiO的抗蚀剂和含卤素化合物的图案转移蚀刻剂的组合形成图案化材料层（特别是导电，半导体或磁性材料结构）的方法，其中卤素是Cl，Br或I.
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公开(公告)号：US06730454B2
公开(公告)日：2004-05-04
申请号：US10124087
申请日：2002-04-16
申请人： Dirk Pfeiffer , Marie Angelopoulos , Katherina Babich , Phillip Brock , Wu-Song Huang , Arpan P. Mahorowala , David R. Medeiros , Ratnam Sooriyakumaran
发明人： Dirk Pfeiffer , Marie Angelopoulos , Katherina Babich , Phillip Brock , Wu-Song Huang , Arpan P. Mahorowala , David R. Medeiros , Ratnam Sooriyakumaran
IPC分类号： G03F700
CPC分类号： H01L21/0276 , G03F7/0045 , G03F7/0757 , G03F7/091 , Y10S430/151
摘要： Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.
摘要翻译： 存在具有发色团部分和透明部分的含SiO聚合物的抗反射组合物是光刻工艺中有用的抗反射硬掩模组合物。 这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。 本发明的组合物有利地用于较短波长的光刻工艺和/或具有最小的残留酸含量。
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4.发明申请公开(公告)号：US20130017486A1
公开(公告)日：2013-01-17
申请号：US13617634
申请日：2012-09-14
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate, and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译： 一种光刻结构，包括：设置在基板上的有机抗反射材料和设置在有机抗反射材料上的硅抗反射材料。 硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本上透明的透明有机基团的交联聚合物。 组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。 本发明还涉及制备光刻结构的方法。
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5.发明授权公开(公告)号：US08293454B2
公开(公告)日：2012-10-23
申请号：US12199253
申请日：2008-11-18
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译： 一种光刻结构，包括：设置在基板上的有机抗反射材料; 以及设置在有机抗反射材料上的硅抗反射材料。 硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本透明的透明有机基团的交联聚合物。 组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。 本发明还涉及制备光刻结构的方法。
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6.发明授权Process of making a semiconductor device using multiple antireflective materials 有权制造使用多种抗反射材料的半导体器件的工艺公开(公告)号：US07968270B2
公开(公告)日：2011-06-28
申请号：US12197571
申请日：2008-08-25
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
CPC分类号： G03F7/091 , Y10S438/952
摘要： A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
摘要翻译： 一种光刻结构，主要由以下部分组成：设置在基板上的有机抗反射材料; 气相沉积的RCHX材料，其中R是选自Si，Ge，B，Sn，Fe和Ti中的一种或多种元素，并且其中X不存在或者是选自以下的一种或多种元素： O，N，S和F; 以及设置在RCHX材料上的光致抗蚀剂材料。 本发明还涉及制造光刻结构的方法，并且使用该结构来图案化衬底。
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7.发明申请公开(公告)号：US20090061355A1
公开(公告)日：2009-03-05
申请号：US12199253
申请日：2008-11-18
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译： 一种光刻结构，包括：设置在基板上的有机抗反射材料; 以及设置在有机抗反射材料上的硅抗反射材料。 硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本透明的透明有机基团的交联聚合物。 组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。 本发明还涉及制备光刻结构的方法。
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8.发明申请PROCESS OF MAKING A SEMICONDUCTOR DEVICE USING MULTIPLE ANTIREFLECTIVE MATERIALS 有权使用多种抗反射材料制备半导体器件的工艺公开(公告)号：US20080311508A1
公开(公告)日：2008-12-18
申请号：US12197571
申请日：2008-08-25
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
CPC分类号： G03F7/091 , Y10S438/952
摘要： A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
摘要翻译： 一种光刻结构，主要由以下部分组成：设置在基板上的有机抗反射材料; 气相沉积的RCHX材料，其中R是选自Si，Ge，B，Sn，Fe和Ti中的一种或多种元素，并且其中X不存在或者是选自以下的一种或多种元素： O，N，S和F; 以及设置在RCHX材料上的光致抗蚀剂材料。 本发明还涉及制造光刻结构的方法，并且使用该结构来图案化衬底。
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公开(公告)号：US07223517B2
公开(公告)日：2007-05-29
申请号：US10634667
申请日：2003-08-05
IPC分类号： G03C7/004
CPC分类号： G03F7/091 , G03F7/0757 , H01L21/0274 , H01L21/0276 , H01L21/32139
摘要： Compositions and techniques for the processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask composition is provided. The composition comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chromophore moiety and transparent moiety. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chromophore moiety and transparent moiety.
摘要翻译： 提供了用于处理半导体器件的组合物和技术。 在本发明的一个方面，提供了一种抗反射硬掩模组合物。 组合物包含完全缩合的多面体寡聚倍半硅氧烷，其中n等于8; 和至少一个发色团部分和透明部分。 在本发明的另一方面，提供一种用于处理半导体器件的方法。 该方法包括以下步骤：在衬底上提供材料层; 在材料层上形成抗反射硬掩模层。 抗反射硬掩模层包括完全冷凝的多面体低聚倍半硅氧烷，其中n等于8; 和至少一个发色团部分和透明部分。
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公开(公告)号：US07648820B2
公开(公告)日：2010-01-19
申请号：US11614799
申请日：2006-12-21
申请人： Katherina Babich , Elbert Huang , Arpan P. Mahorowala , David R. Medeiros , Dirk Pfeiffer , Karen Temple
发明人： Katherina Babich , Elbert Huang , Arpan P. Mahorowala , David R. Medeiros , Dirk Pfeiffer , Karen Temple
CPC分类号： G03F7/091 , G03F7/0045 , G03F7/0757 , H01L21/0274 , H01L21/32139 , Y10S430/106 , Y10S430/115 , Y10S430/143 , Y10S430/151
摘要： Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.
摘要翻译： 提供了用于半导体器件加工的抗反射硬掩模组合物的抗反射硬掩模组合物和技术。 在本发明的一个方面，提供了用于光刻的抗反射硬掩模层。 抗反射硬掩模层包含含有至少一个发色团部分和至少一个透明部分的碳硅烷聚合物主链; 和交联组分。 在本发明的另一方面，提供一种用于处理半导体器件的方法。 该方法包括以下步骤：在衬底上提供材料层; 在材料层上形成抗反射硬掩模层。 抗反射硬掩模层包含含有至少一个发色团部分和至少一个透明部分的碳硅烷聚合物主链; 和交联组分。
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