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27 条记录 (耗时 0.035 秒)

    Low-activation energy silicon-containing resist system
    8.
    发明授权
    Low-activation energy silicon-containing resist system 失效
    低活化能含硅抗蚀剂体系

    公开(公告)号：US06939664B2

    公开(公告)日：2005-09-06

    申请号：US10693199

    申请日：2003-10-24

    申请人： Wu-Song Huang ,  Robert D. Allen ,  Marie Angelopoulos ,  Ranee W. Kwong ,  Ratnam Sooriyakumaran

    发明人： Wu-Song Huang ,  Robert D. Allen ,  Marie Angelopoulos ,  Ranee W. Kwong ,  Ratnam Sooriyakumaran

    IPC分类号： G03C1/76 ,  G03F20060101 ,  G03F7/004 ,  G03F7/075 ,  G03E7/004

    CPC分类号： G03F7/0757 ,  G03F7/0045 ,  G03F7/0046

    摘要： Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.

    摘要翻译： 提供了本发明的倍半硅氧烷聚合物，并且提供了含有这种倍半硅氧烷聚合物的抗蚀剂组合物，其中至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分硅烷倍半硅氧烷聚合物含有侧链溶解性抑制酸不稳定部分， 用于酸催化裂解的活化能和高光密度部分的存在被最小化或避免。 本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。 本发明的聚合物在正性抗蚀剂组合物中特别有用。 本发明包括使用这种抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。

    Photoresist system and process for aerial image enhancement
    10.
    发明授权
    Photoresist system and process for aerial image enhancement 失效
    光刻胶系统和航空图像增强工艺

    公开(公告)号：US06245492B1

    公开(公告)日：2001-06-12

    申请号：US09133204

    申请日：1998-08-13

    申请人： Wu-Song Huang ,  Ahmad D. Katnani ,  Ranee W. Kwong ,  Kathleen H. Martinek

    发明人： Wu-Song Huang ,  Ahmad D. Katnani ,  Ranee W. Kwong ,  Kathleen H. Martinek

    IPC分类号： G03C500

    CPC分类号： G03F7/2022

    摘要： Improved resolution of lithographic patterns can be obtained using a double exposure process where a resist layer is subjected to a patternwise first exposure followed by a blanket second exposure. The resist composition preferably contains a chemically amplified resist which undergoes significant shrinkage on exposure to radiation, a chemically amplified resist which contains a photo-bleachable component, or a chemically amplified resist which contains a chemical-bleachable component.

    摘要翻译： 可以使用双重曝光工艺获得光刻图案的改进的分辨率，其中抗蚀剂层经受图案化的第一次曝光，然后进行第二曝光。 抗蚀剂组合物优选含有在暴露于辐射下经受显着收缩的化学放大抗蚀剂，含有可光漂白组分的化学放大抗蚀剂或含有化学可漂白组分的化学放大抗蚀剂。