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1.发明授权Etch improved resist systems containing acrylate (or methacrylate) silane monomers 有权蚀刻改进的含有丙烯酸酯（或甲基丙烯酸酯）硅烷单体的抗蚀剂体系公开(公告)号：US06586156B2
公开(公告)日：2003-07-01
申请号：US09907392
申请日：2001-07-17
申请人： Marie Angelopoulos , Wu-Song Huang , Dai Junyan , Ranee W. Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau , Karen E. Petrillo
发明人： Marie Angelopoulos , Wu-Song Huang , Dai Junyan , Ranee W. Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau , Karen E. Petrillo
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , G03F7/0392 , Y10S430/106
摘要： A chemically amplified (CA) photoresist system wherein a terpolymer containing ketal/phenolic/silicon based sidechains is provided. Among other things, the terpolymers provide for improved bake technologies. In another aspect a process for lithographic treatment of a substrate by means of ketal/phenolic/silicon based compositions and corresponding processes for the production of an object, particularly an electronic component are provided.
摘要翻译： 一种化学放大（CA）光刻胶体系，其中提供含有缩酮/酚/硅基侧链的三元共聚物。 除其他外，三元共聚物可提供改进的烘烤技术。 在另一方面，提供了通过缩酮/酚/硅基组合物对基材进行光刻处理的方法和用于制备物体，特别是电子部件的相应方法。
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公开(公告)号：US06420084B1
公开(公告)日：2002-07-16
申请号：US09602136
申请日：2000-06-23
申请人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau
发明人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau
IPC分类号： G03F7004
CPC分类号： G03F7/0757
摘要： The invention provides improved resist compositions and lithographic methods using the resist compositions of the invention. The resist compositions of the invention are acid-catalyzed resists which are characterized by the presence of an SiO-containing polymer. The invention also encompasses methods of forming patterned material layers (especially conductive, semiconductive, or magnetic material structures) using the combination of the SiO-containing resist and a halogen compound-containing pattern transfer etchant where the halogen is Cl, Br or I.
摘要翻译： 本发明提供使用本发明的抗蚀剂组合物的改进的抗蚀剂组合物和平版印刷方法。 本发明的抗蚀剂组合物是酸催化的抗蚀剂，其特征在于存在含SiO的聚合物。 本发明还包括使用含SiO的抗蚀剂和含卤素化合物的图案转移蚀刻剂的组合形成图案化材料层（特别是导电，半导体或磁性材料结构）的方法，其中卤素是Cl，Br或I.
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公开(公告)号：US06653045B2
公开(公告)日：2003-11-25
申请号：US09785609
申请日：2001-02-16
申请人： Marie Angelopoulos , Ari Aviram , Wu-Song Huang , Ranee W. Kwong , Robert N. Lang , Qinghuang Lin , Wayne M. Moreau
发明人： Marie Angelopoulos , Ari Aviram , Wu-Song Huang , Ranee W. Kwong , Robert N. Lang , Qinghuang Lin , Wayne M. Moreau
IPC分类号： G03F7004
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/106
摘要： A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.
摘要翻译： 负性抗蚀剂组合物，其包含：（a）具有选自稠合脂族部分，稠环稠合芳族部分和杂环稠合芳族化合物的侧链稠合部分和与交联剂反应的位点的含硅聚合物，（b） 酸敏感性交联剂，和（c）辐射敏感性酸发生剂。 抗蚀剂组合物用于在基材中形成图案化的材料层。
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公开(公告)号：US06821718B2
公开(公告)日：2004-11-23
申请号：US10657168
申请日：2003-09-09
申请人： Marie Angelopoulos , Ari Aviram , Wu-Song Huang , Ranee W. Kwong , Robert N. Lang , Qinghuang Lin , Wayne M. Moreau
发明人： Marie Angelopoulos , Ari Aviram , Wu-Song Huang , Ranee W. Kwong , Robert N. Lang , Qinghuang Lin , Wayne M. Moreau
IPC分类号： G03C500
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/106
摘要： A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.
摘要翻译： 负性抗蚀剂组合物，其包含：（a）具有选自稠合脂族部分，稠环稠合芳族部分和杂环稠合芳族化合物的侧链稠合部分和与交联剂反应的位点的含硅聚合物，（b） 酸敏感性交联剂，和（c）辐射敏感性酸发生剂。 抗蚀剂组合物用于在基材中形成图案化的材料层。
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5.发明申请Use of Mixed Bases to Enhance Patterned Resist Profiles on Chrome or Sensitive Substrates 有权使用混合基材来增强铬或敏感基材上的图案化抗蚀剂型材公开(公告)号：US20080227030A1
公开(公告)日：2008-09-18
申请号：US10597904
申请日：2004-02-11
CPC分类号： G03F7/0045 , G03F1/78 , G03F7/0392 , G03F7/40 , Y10S430/143
摘要： Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.
摘要翻译： 通过使用包括室温固体碱和液体低蒸气压基料的基础添加剂的组合，可获得即使在困难的基材上也具有良好基础性能的抗蚀剂组合物。 该组合物在通常用于掩模制造的金属基材如含铬层上特别有用。
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6.发明授权Use of mixed bases to enhance patterned resist profiles on chrome or sensitive substrates 有权使用混合的底物来增强镀铬或敏感衬底上的抗蚀剂图案公开(公告)号：US07960095B2
公开(公告)日：2011-06-14
申请号：US10597904
申请日：2004-02-11
CPC分类号： G03F7/0045 , G03F1/78 , G03F7/0392 , G03F7/40 , Y10S430/143
摘要： Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.
摘要翻译： 通过使用包括室温固体碱和液体低蒸气压基料的基础添加剂的组合，可获得即使在困难的基材上也具有良好基础性能的抗蚀剂组合物。 该组合物在通常用于掩模制造的金属基材如含铬层上特别有用。
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公开(公告)号：US07314700B2
公开(公告)日：2008-01-01
申请号：US10537259
申请日：2002-12-05
申请人： Wu-Song Huang , Wenjie Li , Wayne Moreau , David R. Medeiros , Karen E. Petrillo , Robert N. Lang , Marie Angelopoulos
发明人： Wu-Song Huang , Wenjie Li , Wayne Moreau , David R. Medeiros , Karen E. Petrillo , Robert N. Lang , Marie Angelopoulos
CPC分类号： G03F7/0045 , G03F7/0392
摘要： The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.
摘要翻译： 具有酸敏感成像聚合物和辐射敏感性酸产生剂组分的抗蚀剂组合物包含：（i）选自溶解抑制酸产生剂的第一辐射敏感性酸产生剂，和（ii）选择的第二辐射敏感酸产生剂 由不受保护的酸性官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂组成的组; 能够形成适用于EPL，EUV，软X射线和其他低能量光刻成像应用的高灵敏度抗蚀剂。 抗蚀剂组合物也可用于其它平版印刷工艺。
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公开(公告)号：US06730454B2
公开(公告)日：2004-05-04
申请号：US10124087
申请日：2002-04-16
申请人： Dirk Pfeiffer , Marie Angelopoulos , Katherina Babich , Phillip Brock , Wu-Song Huang , Arpan P. Mahorowala , David R. Medeiros , Ratnam Sooriyakumaran
发明人： Dirk Pfeiffer , Marie Angelopoulos , Katherina Babich , Phillip Brock , Wu-Song Huang , Arpan P. Mahorowala , David R. Medeiros , Ratnam Sooriyakumaran
IPC分类号： G03F700
CPC分类号： H01L21/0276 , G03F7/0045 , G03F7/0757 , G03F7/091 , Y10S430/151
摘要： Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions of the invention are advantageously useful with shorter wavelength lithographic processes and/or have minimal residual acid content.
摘要翻译： 存在具有发色团部分和透明部分的含SiO聚合物的抗反射组合物是光刻工艺中有用的抗反射硬掩模组合物。 这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。 本发明的组合物有利地用于较短波长的光刻工艺和/或具有最小的残留酸含量。
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公开(公告)号：US06436605B1
公开(公告)日：2002-08-20
申请号：US09350939
申请日：1999-07-12
申请人： Marie Angelopoulos , Ari Aviram , Edward D. Babich , Timothy Allan Brunner , Thomas Benjamin Faure , C. Richard Guarnieri , Ranee W. Kwong , Karen E. Petrillo
发明人： Marie Angelopoulos , Ari Aviram , Edward D. Babich , Timothy Allan Brunner , Thomas Benjamin Faure , C. Richard Guarnieri , Ranee W. Kwong , Karen E. Petrillo
IPC分类号： G03F7004
CPC分类号： G03F7/0043
摘要： The reactive ion etching resistance of radiation sensitive resist composition is enhanced by adding at least one organometallic compound to a radiation sensitive polymer. The resist composition can be patterned and used as mask for patterning an underlying layer.
摘要翻译： 通过向辐射敏感聚合物中加入至少一种有机金属化合物来增强辐射敏感抗蚀剂组合物的反应离子蚀刻电阻。 抗蚀剂组合物可以被图案化并用作用于图案化下层的掩模。
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公开(公告)号：US06939664B2
公开(公告)日：2005-09-06
申请号：US10693199
申请日：2003-10-24
IPC分类号： G03C1/76 , G03F20060101 , G03F7/004 , G03F7/075 , G03E7/004
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/0046
摘要： Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
摘要翻译： 提供了本发明的倍半硅氧烷聚合物，并且提供了含有这种倍半硅氧烷聚合物的抗蚀剂组合物，其中至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分硅烷倍半硅氧烷聚合物含有侧链溶解性抑制酸不稳定部分， 用于酸催化裂解的活化能和高光密度部分的存在被最小化或避免。 本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。 本发明的聚合物在正性抗蚀剂组合物中特别有用。 本发明包括使用这种抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。
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