公开(公告)号：US20070097476A1

公开(公告)日：2007-05-03

申请号：US11261856

申请日：2005-10-28

申请人： Martha Truninger ,  Melinda Valencia ,  Steve Hanson ,  Loreli Fister ,  Arjang Fartash ,  George Radominski ,  Timothy Emery ,  Robert Shreeve ,  Matthew Rocha ,  Alexander Govyadinov

发明人： Martha Truninger ,  Melinda Valencia ,  Steve Hanson ,  Loreli Fister ,  Arjang Fartash ,  George Radominski ,  Timothy Emery ,  Robert Shreeve ,  Matthew Rocha ,  Alexander Govyadinov

IPC分类号： G02F1/03

CPC分类号： G02F1/0128 ,  G02B26/0833 ,  G02F1/29 ,  G02F2203/12 ,  H04N9/312

摘要： A display system includes a housing having at least one optical window and at least one charge-controlled spatial light-modulator disposed within the housing. The at least one spatial light-modulator is configured to project an image-bearing light beam to a viewing surface through the at least one optical window. The system further includes at least one electron gun selectively positioned at a predetermined angle with respect to the at least one spatial light-modulator. The electron gun is configured to project an electron beam into the housing to impinge a front surface of the at least one spatial light-modulator.

摘要翻译： 显示系统包括具有至少一个光学窗口的壳体和设置在壳体内的至少一个电荷控制的空间光调制器。 所述至少一个空间光调制器被配置为通过所述至少一个光学窗口将图像承载光束投射到观察表面。 该系统还包括相对于至少一个空间光调制器选择性地以预定角度定位的至少一个电子枪。 电子枪被配置为将电子束投射到壳体中以撞击至少一个空间光调制器的前表面。

公开(公告)号：US07132132B2

公开(公告)日：2006-11-07

申请号：US11065933

申请日：2005-02-25

申请人： Arjang Fartash

发明人： Arjang Fartash

IPC分类号： B05D5/12

CPC分类号： B41J2/14129 ,  B41J2202/03

摘要： A method of forming a fluid ejection device is disclosed. The steps of forming the fluid ejection device may include forming a heating element on a substrate. The steps for forming the fluid ejection device may further include depositing a buffer layer over the heating element, and depositing a layer of compressive alpha-tantalum on the buffer layer with lattice matching between the layer of compressive alpha-tantalum and the buffer layer.

摘要翻译： 公开了一种形成流体喷射装置的方法。 形成流体喷射装置的步骤可以包括在基板上形成加热元件。 用于形成流体喷射装置的步骤还可以包括在加热元件上沉积缓冲层，以及在压缩α-钽层与缓冲层之间的晶格匹配的缓冲层上沉积一层压缩的α-钽。

公开(公告)号：US07131193B2

公开(公告)日：2006-11-07

申请号：US10847989

申请日：2004-05-17

申请人： Arjang Fartash ,  Christopher D. Combs ,  Raiyomand Aspandiar ,  Tom E. Pearson

发明人： Arjang Fartash ,  Christopher D. Combs ,  Raiyomand Aspandiar ,  Tom E. Pearson

IPC分类号： H05K3/36

CPC分类号： H05K3/303 ,  H05K3/301 ,  H05K3/3415 ,  H05K2201/0125 ,  H05K2201/09072 ,  H05K2201/10598 ,  H05K2201/10734 ,  Y02P70/613 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49139 ,  Y10T29/49144 ,  Y10T29/49147 ,  Y10T29/49153

摘要： An apparatus to retain an assembled component on one side of a double-sided printed circuit board during reflow of other components subsequently positioned on an opposite side of the double-sided printed circuit board and methods for manufacturing and using the same. The retainer includes a heat-shrinkable member and a retaining member. Being formed from a heat-shrinkable material, the heat-shrinkable member is configured to receive a post extending through an opening formed in a double-sided printed circuit board from a component previously assembled on one side thereof. The retaining member is coupled with the heat-shrinkable member, and the double-sided printed circuit board is disposed substantially between the retaining member and the component. The heat-shrinkable member is configured to shrinkably engage the post when an opposite side of the double-sided printed circuit board is populated and reflowed, retaining the inverted component on the double-sided printed circuit board.

公开(公告)号：US20050253902A1

公开(公告)日：2005-11-17

申请号：US11190137

申请日：2005-07-25

申请人： Arjang Fartash

发明人： Arjang Fartash

IPC分类号： B41J2/05 ,  B05C5/00 ,  B41J2/14 ,  B41J2/16

CPC分类号： B41J2/1631 ,  B41J2/1404 ,  B41J2/1433 ,  B41J2/1603 ,  B41J2/1606 ,  B41J2/162 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  Y10T29/49401

摘要： A chamber includes a substrate, a chamber layer disposed on the substrate that defines the sidewalls of the chamber, and the chamber layer has a chamber surface. The chamber has an area in the plane formed by the chamber surface in the range from about 1 square micrometer to about 10,000 square micrometers. The chamber also includes an orifice layer disposed over the chamber layer. The orifice layer has a first and second orifice surface and a bore wherein the bore has an area in the plane formed by the first orifice surface less than the chamber area. The chamber further includes a protective layer deposited, through the bore, on the sidewalls of the chamber layer and a portion of the first orifice surface.

公开(公告)号：US20050250313A1

公开(公告)日：2005-11-10

申请号：US11179302

申请日：2005-07-12

申请人： Arjang Fartash

发明人： Arjang Fartash

IPC分类号： C23C14/02 ,  C23C14/16 ,  H01L21/285 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76876 ,  C23C14/025 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76841 ,  H01L2221/1078 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/12819 ,  Y10T428/31678

摘要： A layer of compressive alpha-tantalum is formed on a substrate by depositing a buffer layer on the substrate and depositing a layer of compressive alpha-tantalum on the buffer layer with lattice matching between the layer of compressive alpha-tantalum and the buffer layer. A bias may be applied to the substrate during deposition of the buffer layer and/or compressive alpha-tantalum layer. In some embodiments, the method may include depositing buffers layers comprising titanium, niobium, substantially pure aluminum or aluminum-copper alloy.

摘要翻译： 通过在衬底上沉积缓冲层而在衬底上形成一层压缩的α-钽，并在压缩的α-钽层和缓冲层之间的晶格匹配的缓冲层上沉积一层压缩的α-钽。 在沉积缓冲层和/或压缩的α-钽层期间，偏置可以施加于衬底。 在一些实施例中，该方法可以包括沉积包含钛，铌，基本上纯的铝或铝 - 铜合金的缓冲层。

公开(公告)号：US20050233159A1

公开(公告)日：2005-10-20

申请号：US10825841

申请日：2004-04-15

申请人： Arjang Fartash

发明人： Arjang Fartash

IPC分类号： C23C14/14 ,  B32B15/04 ,  B41J2/14 ,  C23C14/02 ,  C23C14/16 ,  C23C16/06 ,  H01G4/33 ,  H01G13/00 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L21/76838 ,  B41J2/14129 ,  B41J2202/03 ,  C23C14/025 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76841 ,  H01L21/76871 ,  H01L21/76876 ,  Y10T29/49432 ,  Y10T428/12819 ,  Y10T428/24992 ,  Y10T428/26 ,  Y10T428/31678

摘要： A method of making tantalum structures, including, creating a tantalum layer disposed on a first layer region of a first layer and on a second layer region of a second layer. The tantalum layer has a substantially bcc-phase tantalum region on the first layer region, and a non-bcc-phase tantalum region on the second layer region.

摘要翻译： 一种制造钽结构的方法，包括：在第一层的第一层区域和第二层的第二层区域上形成钽层。 钽层在第一层区域上具有大致bcc相钽区域，在第二层区域上具有非bcc相钽区域。

公开(公告)号：US07552533B2

公开(公告)日：2009-06-30

申请号：US11190137

申请日：2005-07-25

申请人： Arjang Fartash

发明人： Arjang Fartash

IPC分类号： B21D53/76 ,  C23C14/34

CPC分类号： B41J2/1631 ,  B41J2/1404 ,  B41J2/1433 ,  B41J2/1603 ,  B41J2/1606 ,  B41J2/162 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  Y10T29/49401

摘要： A fluid ejector head is manufactured. Sidewalls of at least one fluid ejection chamber are defined about at least one fluid drop generator disposed over a substrate. At least one bore is created over the at least one fluid ejection chamber. The at least one bore has a first nozzle surface proximate to the at least one fluid ejection chamber, and a second nozzle surface distal to the at least one fluid ejection chamber. An initial deposit of a protective layer material is deposited at a low substrate bias voltage through the at least one bore. A portion of the initial deposit of the protective layer material is redistributed on the sidewalls at a high substrate bias voltage. An inorganic protective layer is formed on the sidewalls of the at least one fluid ejection chamber and on a portion of the first nozzle surface.

摘要翻译： 制造流体喷射头。 关于至少一个流体喷射室的侧壁围绕设置在基板上的至少一个液滴发生器定义。 在至少一个流体喷射室上形成至少一个孔。 所述至少一个孔具有靠近所述至少一个流体喷射室的第一喷嘴表面，以及远离所述至少一个流体喷射室的第二喷嘴表面。 保护层材料的初始沉积物通过至少一个孔以低衬底偏置电压沉积。 保护层材料的初始沉积的一部分在高衬底偏置电压下重新分布在侧壁上。 在至少一个流体喷射室的侧壁上和第一喷嘴表面的一部分上形成无机保护层。

公开(公告)号：US07517060B2

公开(公告)日：2009-04-14

申请号：US11345755

申请日：2006-02-02

申请人： Ulrich E. Hess ,  Samson Berhane ,  Arjang Fartash

发明人： Ulrich E. Hess ,  Samson Berhane ,  Arjang Fartash

IPC分类号： B41J2/05

CPC分类号： B41J2/1606 ,  B41J2/14129 ,  B41J2202/03

摘要： A cavitation structure for a print head has a first dielectric layer overlying at least a first portion of a substrate. A second dielectric layer has a first portion overlying at least a second portion of the substrate and a second portion, different from the first portion of the second dielectric layer, overlying at least a portion of the first dielectric layer. A cavitation layer has a first portion in contact with the first dielectric layer and a second portion in lateral contact with the second portion of the second dielectric layer. A third dielectric layer is disposed on only the first portion of the second dielectric layer.

摘要翻译： 用于打印头的空化结构具有覆盖在基底的至少第一部分上的第一介电层。 第二电介质层具有覆盖衬底的至少第二部分的第一部分和与第二介电层的第一部分不同的第二部分，覆盖第一介电层的至少一部分。 空化层具有与第一介电层接触的第一部分和与第二介电层的第二部分侧向接触的第二部分。 第三电介质层仅设置在第二电介质层的第一部分上。

公开(公告)号：US07081306B2

公开(公告)日：2006-07-25

申请号：US11179302

申请日：2005-07-12

申请人： Arjang Fartash

发明人： Arjang Fartash

IPC分类号： B32B15/00 ,  B32B15/04 ,  B32B9/06 ,  B32B19/00

CPC分类号： H01L21/76876 ,  C23C14/025 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76841 ,  H01L2221/1078 ,  Y10T428/12576 ,  Y10T428/12611 ,  Y10T428/12819 ,  Y10T428/31678

摘要： A layer of compressive alpha-tantalum is formed on a substrate by depositing a buffer layer on the substrate and depositing a layer of compressive alpha-tantalum on the buffer layer with lattice matching between the layer of compressive alpha-tantalum and the buffer layer. A bias may be applied to the substrate during deposition of the buffer layer and/or compressive alpha-tantalum layer. In some embodiments, the method may include depositing buffers layers comprising titanium, niobium, substantially pure aluminum or aluminum-copper alloy.

摘要翻译： 通过在衬底上沉积缓冲层而在衬底上形成一层压缩的α-钽，并在压缩的α-钽层和缓冲层之间的晶格匹配的缓冲层上沉积一层压缩的α-钽。 在沉积缓冲层和/或压缩的α-钽层期间，偏置可以施加于衬底。 在一些实施例中，该方法可以包括沉积包含钛，铌，基本上纯的铝或铝 - 铜合金的缓冲层。

公开(公告)号：US06942318B2

公开(公告)日：2005-09-13

申请号：US10159363

申请日：2002-05-31

申请人： Arjang Fartash

发明人： Arjang Fartash

IPC分类号： B41J2/05 ,  B05C5/00 ,  B41J2/14 ,  B41J2/16

CPC分类号： B41J2/1631 ,  B41J2/1404 ,  B41J2/1433 ,  B41J2/1603 ,  B41J2/1606 ,  B41J2/162 ,  B41J2/1634 ,  B41J2/1642 ,  B41J2/1646 ,  Y10T29/49401

摘要： A chamber includes a substrate, a chamber layer disposed on the substrate that defines the sidewalls of the chamber, and the chamber layer has a chamber surface. The chamber has an area in the plane formed by the chamber surface in the range from about 1 square micrometer to about 10,000 square micrometers. The chamber also includes an orifice layer disposed over the chamber layer. The orifice layer has a first and second orifice surface and a bore wherein the bore has an area in the plane formed by the first orifice surface less than the chamber area. The chamber further includes a protective layer deposited, through the bore, on the sidewalls of the chamber layer and a portion of the first orifice surface.

摘要翻译： 腔室包括衬底，设置在衬底上的限定室的侧壁的室层，并且室层具有室表面。 该腔室具有由腔室表面形成的平面的面积在约1平方微米至约10,000平方微米的范围内。 腔室还包括设置在腔室层上的孔层。 孔口层具有第一和第二孔表面和孔，其中孔具有由第一孔表面形成的平面中的面积小于腔室面积的面积。 腔室还包括通过孔沉积在腔室层的侧壁和第一孔表面的一部分上的保护层。