Signal Transmission Arrangement
    3.
    发明申请
    Signal Transmission Arrangement 有权
    信号传输布置

    公开(公告)号:US20110148549A1

    公开(公告)日:2011-06-23

    申请号:US12646731

    申请日:2009-12-23

    IPC分类号: H03H2/00

    CPC分类号: H03H7/004 H01F19/00 H03H7/00

    摘要: A signal transmission arrangement includes input terminals for receiving an input signal and output terminals for providing an output signal. A first transformer has a primary winding and a secondary winding, the primary winding being coupled to the input terminals. A second transformer has a primary winding and a secondary winding, the primary winding being coupled to the secondary winding of the first transformer, and the secondary winding being coupled to the output terminals.

    摘要翻译: 信号传输装置包括用于接收输入信号的输入端和用于提供输出信号的输出端。 第一变压器具有初级绕组和次级绕组,初级绕组耦合到输入端子。 第二变压器具有初级绕组和次级绕组,初级绕组耦合到第一变压器的次级绕组,次级绕组耦合到输出端子。

    High voltage resistance coupling structure
    4.
    发明授权
    High voltage resistance coupling structure 有权
    高压电阻耦合结构

    公开(公告)号:US08790985B2

    公开(公告)日:2014-07-29

    申请号:US13538043

    申请日:2012-06-29

    IPC分类号: H01L21/76

    摘要: The disclosed invention provides a structure and method for providing a high lateral voltage resistance between the electrical networks, sharing a lateral plane, of conductive elements (e.g., having different high voltage potentials) comprising a coupler. In one embodiment, an integrated coupler providing a high lateral voltage resistance comprises a primary conductive element and a secondary conductive element. An isolating material is laterally configured between the electrical network of the primary conductive element and an electrical network of the secondary conductive element. The isolating material may comprise a low-k dielectric layer and prevents any lateral barrier layers (e.g., etch stop layers, diffusion barrier layers, etc.) from extending between the first conductive element and the electrical network of the second conductive element. The structure therefore provides a galvanically isolated integrated coupler which avoids electrical shorting between circuits (e.g., at barrier layers) resulting in an improved high voltage resistance.

    摘要翻译: 所公开的发明提供了一种用于在包括耦合器的导电元件(例如,具有不同的高电压电位)的共享横向平面的电网之间提供高横向电压电阻的结构和方法。 在一个实施例中,提供高横向电压电阻的集成耦合器包括主导电元件和次导电元件。 隔离材料横向配置在主要导电元件的电网和次级导电元件的电网之间。 隔离材料可以包括低k电介质层,并且防止任何侧向阻挡层(例如,蚀刻停止层,扩散阻挡层等)在第一导电元件和第二导电元件的电网之间延伸。 因此,该结构提供了一种电隔离的集成耦合器,其避免了电路之间的电短路(例如,在阻挡层处),导致改进的高耐电压。

    Signal transmission arrangement
    5.
    发明授权
    Signal transmission arrangement 有权
    信号传输布置

    公开(公告)号:US08319573B2

    公开(公告)日:2012-11-27

    申请号:US12646731

    申请日:2009-12-23

    IPC分类号: H01P5/12 H01F30/06

    CPC分类号: H03H7/004 H01F19/00 H03H7/00

    摘要: A signal transmission arrangement includes input terminals for receiving an input signal and output terminals for providing an output signal. A first transformer has a primary winding and a secondary winding, the primary winding being coupled to the input terminals. A second transformer has a primary winding and a secondary winding, the primary winding being coupled to the secondary winding of the first transformer, and the secondary winding being coupled to the output terminals.

    摘要翻译: 信号传输装置包括用于接收输入信号的输入端和用于提供输出信号的输出端。 第一变压器具有初级绕组和次级绕组,初级绕组耦合到输入端子。 第二变压器具有初级绕组和次级绕组,初级绕组耦合到第一变压器的次级绕组,次级绕组耦合到输出端子。

    High voltage resistance coupling structure
    6.
    发明授权
    High voltage resistance coupling structure 有权
    高压电阻耦合结构

    公开(公告)号:US08278730B2

    公开(公告)日:2012-10-02

    申请号:US12607230

    申请日:2009-10-28

    IPC分类号: H01L21/70

    摘要: The disclosed invention provides a structure and method for providing a high lateral voltage resistance between the electrical networks, sharing a lateral plane, of conductive elements (e.g., having different high voltage potentials) comprising a coupler. In one embodiment, an integrated coupler providing a high lateral voltage resistance comprises a primary conductive element and a secondary conductive element. An isolating material is laterally configured between the electrical network of the primary conductive element and an electrical network of the secondary conductive element. The isolating material may comprise a low-k dielectric layer and prevents any lateral barrier layers (e.g., etch stop layers, diffusion barrier layers, etc.) from extending between the first conductive element and the electrical network of the second conductive element. The structure therefore provides a galvanically isolated integrated coupler which avoids electrical shorting between circuits (e.g., at barrier layers) resulting in an improved high voltage resistance.

    摘要翻译: 所公开的发明提供了一种用于在包括耦合器的导电元件(例如,具有不同的高电压电位)的共享横向平面的电网之间提供高横向电压电阻的结构和方法。 在一个实施例中,提供高横向电压电阻的集成耦合器包括主导电元件和次导电元件。 隔离材料横向配置在主要导电元件的电网和次级导电元件的电网之间。 隔离材料可以包括低k电介质层,并且防止任何侧向阻挡层(例如,蚀刻停止层,扩散阻挡层等)在第一导电元件和第二导电元件的电网之间延伸。 因此,该结构提供了一种电隔离的集成耦合器,其避免了电路之间的电短路(例如,在阻挡层处),导致改进的高耐电压。

    HIGH VOLTAGE RESISTANCE COUPLING STRUCTURE
    7.
    发明申请
    HIGH VOLTAGE RESISTANCE COUPLING STRUCTURE 有权
    高电阻耦合结构

    公开(公告)号:US20110095392A1

    公开(公告)日:2011-04-28

    申请号:US12607230

    申请日:2009-10-28

    IPC分类号: H01L29/06 H01L21/762

    摘要: The disclosed invention provides a structure and method for providing a high lateral voltage resistance between the electrical networks, sharing a lateral plane, of conductive elements (e.g., having different high voltage potentials) comprising a coupler. In one embodiment, an integrated coupler providing a high lateral voltage resistance comprises a primary conductive element and a secondary conductive element. An isolating material is laterally configured between the electrical network of the primary conductive element and an electrical network of the secondary conductive element. The isolating material may comprise a low-k dielectric layer and prevents any lateral barrier layers (e.g., etch stop layers, diffusion barrier layers, etc.) from extending between the first conductive element and the electrical network of the second conductive element. The structure therefore provides a galvanically isolated integrated coupler which avoids electrical shorting between circuits (e.g., at barrier layers) resulting in an improved high voltage resistance.

    摘要翻译: 所公开的发明提供了一种用于在包括耦合器的导电元件(例如,具有不同的高电压电位)的共享横向平面的电网之间提供高横向电压电阻的结构和方法。 在一个实施例中,提供高横向电压电阻的集成耦合器包括主导电元件和次导电元件。 隔离材料横向配置在主要导电元件的电网和次级导电元件的电网之间。 隔离材料可以包括低k电介质层,并且防止任何侧向阻挡层(例如,蚀刻停止层,扩散阻挡层等)在第一导电元件和第二导电元件的电网之间延伸。 因此,该结构提供了一种电隔离的集成耦合器,其避免了电路之间的电短路(例如,在阻挡层处),导致改进的高耐电压。

    High Voltage Resistance Coupling Structure
    8.
    发明申请
    High Voltage Resistance Coupling Structure 有权
    高压电阻耦合结构

    公开(公告)号:US20120273917A1

    公开(公告)日:2012-11-01

    申请号:US13538043

    申请日:2012-06-29

    IPC分类号: H01L23/52 H01L21/76

    摘要: The disclosed invention provides a structure and method for providing a high lateral voltage resistance between the electrical networks, sharing a lateral plane, of conductive elements (e.g., having different high voltage potentials) comprising a coupler. In one embodiment, an integrated coupler providing a high lateral voltage resistance comprises a primary conductive element and a secondary conductive element. An isolating material is laterally configured between the electrical network of the primary conductive element and an electrical network of the secondary conductive element. The isolating material may comprise a low-k dielectric layer and prevents any lateral barrier layers (e.g., etch stop layers, diffusion barrier layers, etc.) from extending between the first conductive element and the electrical network of the second conductive element. The structure therefore provides a galvanically isolated integrated coupler which avoids electrical shorting between circuits (e.g., at barrier layers) resulting in an improved high voltage resistance.

    摘要翻译: 所公开的发明提供了一种用于在包括耦合器的导电元件(例如,具有不同的高电压电位)的共享横向平面的电网之间提供高横向电压电阻的结构和方法。 在一个实施例中,提供高横向电压电阻的集成耦合器包括主导电元件和次导电元件。 隔离材料横向配置在主要导电元件的电网和次级导电元件的电网之间。 隔离材料可以包括低k电介质层,并且防止任何侧向阻挡层(例如,蚀刻停止层,扩散阻挡层等)在第一导电元件和第二导电元件的电网之间延伸。 因此,该结构提供了一种电隔离的集成耦合器,其避免了电路之间的电短路(例如,在阻挡层处),导致改进的高耐电压。

    Semiconductor configuration having an integrated coupler and method for manufacturing such a semiconductor configuration
    9.
    发明授权
    Semiconductor configuration having an integrated coupler and method for manufacturing such a semiconductor configuration 有权
    具有集成耦合器的半导体结构和用于制造这种半导体结构的方法

    公开(公告)号:US07710215B2

    公开(公告)日:2010-05-04

    申请号:US12025170

    申请日:2008-02-04

    IPC分类号: H01P5/02 H01P3/08

    CPC分类号: H04B5/0012 H04B5/0093

    摘要: A semiconductor configuration having an integrated coupler is provided. The semiconductor configuration includes a coupler which is integrated in the substrate and which includes a first port and a second port. The coupler defines, in a plan view onto the substrate, an inner region of the substrate surrounded at least in sections by the coupler, and an outer region of the substrate arranged outside to the coupler. The coupler is at least a magnetic coupler, a capacitive coupler, or a combination of both. At least a circuit element is integrated in the inner region of the substrate and includes a port which is electrically connected to the second port of the coupler.

    摘要翻译: 提供具有集成耦合器的半导体配置。 半导体配置包括集成在基板中并且包括第一端口和第二端口的耦合器。 耦合器在平面图中限定了衬底的至少部分被耦合器包围的衬底的内部区域,并且衬底的外部区域布置在耦合器的外部。 耦合器至少是磁耦合器,电容耦合器或两者的组合。 至少电路元件集成在基板的内部区域中,并且包括电连接到耦合器的第二端口的端口。