公开(公告)号：US5441913A

公开(公告)日：1995-08-15

申请号：US266680

申请日：1994-06-28

申请人： Masahiko Hata ,  Noboru Fukuhara ,  Hiroaki Takata ,  Katsumi Inui

发明人： Masahiko Hata ,  Noboru Fukuhara ,  Hiroaki Takata ,  Katsumi Inui

IPC分类号： H01L21/203 ,  H01L21/205 ,  H01L21/20

CPC分类号： H01L21/02395 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02631

摘要： A semiconductor epitaxial substrate and a process for producing the same, the semiconductor epitaxial substrate comprising a GaAs single-crystal substrate having thereon an In.sub.y Ga.sub.(1-y) As (0

摘要翻译： 一种半导体外延基板及其制造方法，所述半导体外延基板包括其上具有In y Ga（1-y）As（0

公开(公告)号：US5569954A

公开(公告)日：1996-10-29

申请号：US302766

申请日：1994-09-13

申请人： Masahiko Hata ,  Noboru Fukuhara ,  Hiroaki Takata ,  Katsumi Inui

发明人： Masahiko Hata ,  Noboru Fukuhara ,  Hiroaki Takata ,  Katsumi Inui

IPC分类号： H01L21/205 ,  H01L21/335 ,  H01S5/32 ,  H01S5/323 ,  H01L29/04

CPC分类号： H01L29/66462 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01S5/323 ,  H01S2304/04 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/32308

摘要： A semiconductor epitaxial substrate, characterized in that a crystal is formed by epitaxial growth on a gallium arsenide single crystal substrate whose crystallographic plane azimuth is slanted from that of one of {100} planes at an angle of not more than 1.degree., that at least part of the epitaxial crystal is an In.sub.x Ga.sub.(1-x) As crystal (wherein 0

摘要翻译： PCT No.PCT / JP94 / 00032 Sec。 371日期1994年9月13日 102（e）1994年9月13日PCT 1994年1月12日PCT PCT。 公开号WO94 / 16459 日期1994年7月21日一种半导体外延基板，其特征在于通过在砷化镓单晶基板上外延生长形成晶体，其晶体方位角以不大于1的角度从{100}面之一倾斜 DEG，外延晶体的至少一部分是In x Ga（1-x）As晶体（其中0

公开(公告)号：US6023077A

公开(公告)日：2000-02-08

申请号：US757981

申请日：1996-11-27

申请人： Yasushi Iyechika ,  Yoshinobu Ono ,  Tomoyuki Takada ,  Katsumi Inui

发明人： Yasushi Iyechika ,  Yoshinobu Ono ,  Tomoyuki Takada ,  Katsumi Inui

IPC分类号： H01L33/00 ,  H01L33/32

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/0075

摘要： A Group III-V compound semiconductor of high crystallinity and high quality, and a light-emitting device using the same, which has high luminous efficacy are obtained by providing a specific ground layer composed of at least three layers between the luminous layer and substrate. A light-emitting device capable of inhibiting formation of a misfit dislocation on the interface of the luminous layer and easily emitting light having a longer wavelength is also obtained by controlling the AlN mixed crystal ratio of at least one layer between the luminous layer and the substrate within a specific range and controlling the lattice constant of the luminous layer to a value larger than that of the ground layer, the luminous layer having a compressive strain formed in contact with the ground layer.

摘要翻译： 通过在发光层和基板之间设置由至少三层构成的特定的接地层，可以获得高结晶性和高质量的III-V族化合物半导体和具有高发光效率的发光装置。 通过控制发光层和基板之间的至少一层的AlN混晶比，能够抑制在发光层的界面上形成失配位错并容易发光的长波长的发光装置 在特定范围内，并且将发光层的晶格常数控制为大于接地层的晶格常数，发光层具有与接地层接触形成的压缩应变。

公开(公告)号：US6100105A

公开(公告)日：2000-08-08

申请号：US852898

申请日：1997-05-09

申请人： Toshihisa Katamime ,  Yasushi Iyechika ,  Yoshinobu Ono ,  Tomoyuki Takada ,  Katsumi Inui

发明人： Toshihisa Katamime ,  Yasushi Iyechika ,  Yoshinobu Ono ,  Tomoyuki Takada ,  Katsumi Inui

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/10 ,  C30B25/14 ,  H01L33/00 ,  H01L21/00

CPC分类号： C23C16/45572 ,  C23C16/455 ,  C30B25/10 ,  C30B25/14 ,  H01L33/007

摘要： A device for the production of a semiconductor compound by means of a metal organic vapor phase epitaxy method, has a structure including a metallic member disposed at a part brought into contact with an upstream flow of a raw material gas and another part for growing a compound semiconductor, wherein the metallic member is cooled to not higher than 300.degree. C. The present invention provides a device for the production of a semiconductor compound with high productivity using a metallic material, wherein processing precision is high and the risk of breakage is low.

摘要翻译： 通过金属有机气相外延法制造半导体化合物的装置具有包括设置在与原料气体的上游流动接触的部分的金属部件和用于生长化合物的另一部分的结构 半导体，其中金属构件被冷却至不高于300℃。本发明提供一种使用金属材料生产高生产率的半导体化合物的装置，其中加工精度高并且破损的风险低。

公开(公告)号：US08021441B2

公开(公告)日：2011-09-20

申请号：US11877040

申请日：2007-10-23

申请人： Katsumi Inui ,  Naoyuki Ide ,  Motoki Takahashi

发明人： Katsumi Inui ,  Naoyuki Ide ,  Motoki Takahashi

IPC分类号： B01D9/00

CPC分类号： C01G15/00 ,  B01D7/00 ,  C23C16/4481

摘要： A method of vaporizing a solid organometallic compound in which the method comprises filling the solid organometallic compound into a container, introducing a carrier gas to the container and taking out the gas containing the organometallic compound, wherein the solid organometallic compound is in the form of pellets and contains an inert support.

摘要翻译： 一种使固体有机金属化合物气化的方法，其中所述方法包括将固体有机金属化合物填充到容器中，将载气引入容器并取出含有有机金属化合物的气体，其中固体有机金属化合物为颗粒形式 并含有惰性支持。

公开(公告)号：US6104044A

公开(公告)日：2000-08-15

申请号：US861820

申请日：1997-05-23

申请人： Yasushi Iyechika ,  Yoshinobu Ono ,  Tomoyuki Takada ,  Katsumi Inui

发明人： Yasushi Iyechika ,  Yoshinobu Ono ,  Tomoyuki Takada ,  Katsumi Inui

IPC分类号： H01L21/285 ,  H01B1/16 ,  H01L21/28 ,  H01L29/45 ,  H01L33/32 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/323 ,  H01L29/205 ,  H01L27/15 ,  H01S3/19

CPC分类号： H01L33/40 ,  H01L29/452 ,  H01L33/42 ,  H01S5/0425 ,  H01S5/32341

摘要： Disclosed is an electrode material for Group III-V compound semiconductor represented by the general formula In.sub.x Ga.sub.y Al.sub.z N (provided that x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1) doped with a p-type impurity which is capable of obtaining good ohmic contact, and an electrode using the same, thereby making it possible to reduce a driving voltage of a device using the compound semiconductor. The electrode material is a metal comprising at least Ca and a noble metal, wherein the total amount of the weight of Ca and the noble metal is not less than 50% by weight and not more than 100% by weight based on the weight of the whole electrode material.

摘要翻译： 公开了由通式In x Ga y Al z N表示的用于III-V族化合物半导体的电极材料（假定x + y + z =1,0,0≤x≤1,0≤y≤1，和 掺杂有能够获得良好的欧姆接触的p型杂质，以及使用其的电极，从而可以降低使用化合物半导体的器件的驱动电压。 电极材料是至少包含Ca和贵金属的金属，其中Ca和贵金属的重量总量不小于50重量％且不大于100重量％，基于 整个电极材料。