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公开(公告)号：US6100105A
公开(公告)日：2000-08-08
申请号：US852898
申请日：1997-05-09
CPC分类号： C23C16/45572 , C23C16/455 , C30B25/10 , C30B25/14 , H01L33/007
摘要： A device for the production of a semiconductor compound by means of a metal organic vapor phase epitaxy method, has a structure including a metallic member disposed at a part brought into contact with an upstream flow of a raw material gas and another part for growing a compound semiconductor, wherein the metallic member is cooled to not higher than 300.degree. C. The present invention provides a device for the production of a semiconductor compound with high productivity using a metallic material, wherein processing precision is high and the risk of breakage is low.
摘要翻译： 通过金属有机气相外延法制造半导体化合物的装置具有包括设置在与原料气体的上游流动接触的部分的金属部件和用于生长化合物的另一部分的结构 半导体，其中金属构件被冷却至不高于300℃。本发明提供一种使用金属材料生产高生产率的半导体化合物的装置，其中加工精度高并且破损的风险低。
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公开(公告)号：US5980632A
公开(公告)日：1999-11-09
申请号：US219115
申请日：1998-12-23
CPC分类号： H01L33/007
摘要： A process for producing a Group III--V compound semiconductor represented by the general formula In.sub.x Ga.sub.y Al.sub.z N (provided that x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1) employs a support member for forming the semiconductor, wherein the member constitutes SiC which is obtained by converting a graphite base material into SiC. In another embodiment, the member comprises a graphite-SiC composite wherein at least a surface layer part of a graphite substrate is converted into SiC. The member of the invention has superior chemical and mechanical stability, thereby making it useful in high-productivity production devices for making compound semiconductors.
摘要翻译： 一种制备由通式In x Ga y Al z N表示的III-V族化合物半导体的方法（假定x + y + z =1,0,0≤x≤1,0,0≤y≤1,0 使用用于形成半导体的支撑构件，其中所述构件构成通过将石墨基底材料转化为SiC而获得的SiC。 在另一个实施方案中，所述构件包括石墨-SiC复合材料，其中至少石墨基底的表面层部分转化为SiC。 本发明的成员具有优异的化学和机械稳定性，从而使其在制备化合物半导体的高生产率生产装置中是有用的。
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3.发明授权
公开(公告)号：US6104044A
公开(公告)日：2000-08-15
申请号：US861820
申请日：1997-05-23
申请人： Yasushi Iyechika , Yoshinobu Ono , Tomoyuki Takada , Katsumi Inui
发明人： Yasushi Iyechika , Yoshinobu Ono , Tomoyuki Takada , Katsumi Inui
IPC分类号： H01L21/285 , H01B1/16 , H01L21/28 , H01L29/45 , H01L33/32 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/323 , H01L29/205 , H01L27/15 , H01S3/19
CPC分类号： H01L33/40 , H01L29/452 , H01L33/42 , H01S5/0425 , H01S5/32341
摘要： Disclosed is an electrode material for Group III-V compound semiconductor represented by the general formula In.sub.x Ga.sub.y Al.sub.z N (provided that x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1) doped with a p-type impurity which is capable of obtaining good ohmic contact, and an electrode using the same, thereby making it possible to reduce a driving voltage of a device using the compound semiconductor. The electrode material is a metal comprising at least Ca and a noble metal, wherein the total amount of the weight of Ca and the noble metal is not less than 50% by weight and not more than 100% by weight based on the weight of the whole electrode material.
摘要翻译： 公开了由通式In x Ga y Al z N表示的用于III-V族化合物半导体的电极材料（假定x + y + z =1,0,0≤x≤1,0≤y≤1，和 掺杂有能够获得良好的欧姆接触的p型杂质，以及使用其的电极，从而可以降低使用化合物半导体的器件的驱动电压。 电极材料是至少包含Ca和贵金属的金属，其中Ca和贵金属的重量总量不小于50重量％且不大于100重量％，基于 整个电极材料。
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公开(公告)号：US6023077A
公开(公告)日：2000-02-08
申请号：US757981
申请日：1996-11-27
申请人： Yasushi Iyechika , Yoshinobu Ono , Tomoyuki Takada , Katsumi Inui
发明人： Yasushi Iyechika , Yoshinobu Ono , Tomoyuki Takada , Katsumi Inui
CPC分类号： H01L33/32 , H01L33/007 , H01L33/0075
摘要： A Group III-V compound semiconductor of high crystallinity and high quality, and a light-emitting device using the same, which has high luminous efficacy are obtained by providing a specific ground layer composed of at least three layers between the luminous layer and substrate. A light-emitting device capable of inhibiting formation of a misfit dislocation on the interface of the luminous layer and easily emitting light having a longer wavelength is also obtained by controlling the AlN mixed crystal ratio of at least one layer between the luminous layer and the substrate within a specific range and controlling the lattice constant of the luminous layer to a value larger than that of the ground layer, the luminous layer having a compressive strain formed in contact with the ground layer.
摘要翻译： 通过在发光层和基板之间设置由至少三层构成的特定的接地层，可以获得高结晶性和高质量的III-V族化合物半导体和具有高发光效率的发光装置。 通过控制发光层和基板之间的至少一层的AlN混晶比，能够抑制在发光层的界面上形成失配位错并容易发光的长波长的发光装置 在特定范围内，并且将发光层的晶格常数控制为大于接地层的晶格常数，发光层具有与接地层接触形成的压缩应变。
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公开(公告)号：US06225195B1
公开(公告)日：2001-05-01
申请号：US09127922
申请日：1998-08-03
IPC分类号： C30B2300
CPC分类号： H01L33/325 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/007
摘要： A method for manufacturing a group III-V compound semiconductor represented by the general formula InxGayAlzN (where x+y+z=1, 0≦x≦1, 0≦y≦1, and 0≦z≦1) by metalorganic vapor phase epitaxy method is provided. The group III-V compound semiconductor has a semiconductor layer consisting of a p-type dopant-nondoped layer, and a semiconductor layer including a p-type dopant-doped layer. In the method, a reactor for growing the semiconductor layer consisting of a p-type dopant-nondoped layer and a reactor for doping a p-type dopant are mutually different.
摘要翻译： 一种用通式InxGayAlzN（其中x + y + z =1,0,0≤x≤1,0<= y <= 1，0≤z≤1）表示的III-V族化合物半导体的制造方法， 1）通过金属有机气相外延法提供。 III-V族化合物半导体具有由p型掺杂剂非掺杂层构成的半导体层和包含p型掺杂剂掺杂层的半导体层。 在该方法中，用于生长由p型掺杂剂非掺杂层组成的半导体层的反应器和用于掺杂p型掺杂剂的反应器是相互不同的。
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6.发明授权公开(公告)号：US06388323B1
公开(公告)日：2002-05-14
申请号：US08808537
申请日：1997-02-28
IPC分类号： H01L2348
摘要： The invention provides an electrode material having the low contact resistance against a III-V group compound semiconductor, thereby realizing a light emitting device having a high luminance and driven at low voltages. The electrode material of the invention is applied to a III-V group compound semiconductor, which is expressed as a general formula of InxGayAlzN, where x+y+z=1, 0≦x≦1, 0≦y≦1, and 0≦z≦1, and doped with p-type impurities. The electrode material comprises an alloy of Au and at least one metal selected from the group consisting of Mg and Zn.
摘要翻译： 本发明提供一种对III-V族化合物半导体具有低接触电阻的电极材料，从而实现了具有高亮度和低电压驱动的发光器件。 将本发明的电极材料应用于III-V族化合物半导体，其通过以下公式表示：In x Ga y Al z N，其中x + y + z = 1，0 <= x <= 1,0，y = 1，0 <= z <= 1，并掺杂有p型杂质。 电极材料包括Au和选自Mg和Zn中的至少一种金属的合金。
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7.发明授权Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element 失效层状III-V族化合物半导体及其制造方法以及发光元件公开(公告)号：US06346720B1
公开(公告)日：2002-02-12
申请号：US08590574
申请日：1996-01-24
申请人： Yasushi Iyechika , Tomoyuki Takada , Yoshinobu Ono
发明人： Yasushi Iyechika , Tomoyuki Takada , Yoshinobu Ono
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L29/201 , H01L29/205 , H01L33/007 , H01S5/32341
摘要： The present invention provides for a high quality Group III-V compound semiconductor, a method of manufacturing the same, and a light emitting element with an excellent emission characteristic which incorporates such a Group III-V compound semiconductor. The Group III-V compound semiconductor has a structure in which a fifth-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula GaaAlbN (a+b=1, 0≦a≦1, 0≦b≦1), a fourth-layer having a lower impurity concentration, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gaa′Alb′N (a′+b′=1, 0≦a′≦1, 0≦b′≦1), and a first-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula InxGayAlzN (x+y+z=1, 0
摘要翻译： 本发明提供了一种高品质的III-V族化合物半导体，其制造方法和具有优异的发射特性的发光元件，其结合了这种III-V族化合物半导体。 III-V族化合物半导体具有这样的结构，其中由通式GaaAlbN（a + b =1,0,0≤a≤1）表示的III-V族化合物半导体形成的第五层 ，0 <= b <= 1），由通式Gaa'Alb'N（a'+ b'= 1）表示的III-V族化合物半导体形成的具有较低杂质浓度的第四层， 1，0 <= a'<= 1，0 <= b'<= 1），以及由通式In x Ga y Al z N（x + y）表示的III-V族化合物半导体形成的第一层 + z = 1,0
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8.发明授权
公开(公告)号：US5708301A
公开(公告)日：1998-01-13
申请号：US392244
申请日：1995-02-22
摘要： The invention provides an electrode material having the low contact resistance against a III-V group compound semiconductor, thereby realizing a light emitting device having a high luminance and driven at low voltages. The electrode material of the invention is applied to a III-V group compound semiconductor, which is expressed as a general formula of In.sub.x Ga.sub.y Al.sub.z N, where x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1, and doped with p-type impurities. The electrode material comprises an alloy of Au and at least one metal selected from the group consisting of Mg and Zn.
摘要翻译： 本发明提供一种对III-V族化合物半导体具有低接触电阻的电极材料，从而实现了具有高亮度和低电压驱动的发光器件。 将本发明的电极材料应用于III-V族化合物半导体，其以通式InxGayAlzN表示，其中x + y + z =1,0.0≤x≤1,0< y <1，0
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公开(公告)号：US06617235B2
公开(公告)日：2003-09-09
申请号：US08623534
申请日：1996-03-29
申请人： Yasushi Iyechika , Yoshinobu Ono , Tomoyuki Takada
发明人： Yasushi Iyechika , Yoshinobu Ono , Tomoyuki Takada
IPC分类号： H01L213205
CPC分类号： C30B29/40 , C30B25/02 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/02661 , Y10S438/93
摘要： The present invention provides for a method of manufacturing a Group III-V compound semiconductor, which grows a nitrogen-contained Group III-V compound semiconductor of the p-type conductivity, without performing any particular post-processing after growing the compound semiconductor, and which prevents a deterioration in the yield of manufacturing light emitting elements due to post-processing. A first embodiment is directed to a method of manufacturing a Group III-V compound semiconductor which contains p-type impurities and which is expressed by a general formula InxGayAlzN (0≧x≧1,0≧z≧1, x+y+z=1), by thermal decomposition vapor phase method using metalorganics, the method being characterized in that carrier gas is inert gas in which the concentration of hydrogen is 0.5 % or smaller by volume. A second embodiment is directed to a method of manufacturing a Group III-V compound semiconductor which contains p-type impurities and which is expressed by a general formula InxGayAlzN (0≧x≧1, 0≧y≧1,0≧1, x+y+z=1), by thermal decomposition vapor phase method using metalorganics, the method being characterized in that after etching within a reaction furnace using at least one compound which is selected from a compound group consisting of compounds of halogenated hydrogen, compounds of halogen and Group V elements and compounds of halogen, hydrogen and Group V elements, inert gas in which the concentration of hydrogen is 0.5% or smaller by volume is used as carrier gas.
摘要翻译： 本发明提供一种制造III-V族化合物半导体的方法，其生长p型导电性的含氮III-V族化合物半导体，而在化合物半导体生长之后不进行任何特定的后处理，以及 这防止了由于后处理而导致制造发光元件的产量的劣化。 第一实施例涉及一种制造含有p型杂质的III-V族化合物半导体的方法，其通过通式In x Ga y Al z N（0> = x> = 1,0> = z> = 1，x + y + z = 1），通过使用金属有机物的热分解气相法，其特征在于载气是氢浓度为0.5体积％以下的惰性气体。 第二实施例涉及一种制造含有p型杂质的III-V族化合物半导体的方法，其由通式In x Ga y Al z N（0> = x> = 1,0，...，y = 1,0 > = 1，x + y + z = 1），通过使用金属有机物的热分解气相法，其特征在于，使用至少一种选自由化合物 卤化氢，卤素和V族元素的化合物和卤素，氢和V族元素的化合物，其中氢的浓度为0.5体积％或更小的惰性气体用作载气。
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10.发明授权Layered group III-V compound semiconductor, method of manufacturing the same and light emitting element 有权层状III-V族化合物半导体，其制造方法和发光元件公开(公告)号：US06472298B2
公开(公告)日：2002-10-29
申请号：US09998296
申请日：2001-12-03
申请人： Yasushi Iyechika , Tomoyuki Takada , Yoshinobu Ono
发明人： Yasushi Iyechika , Tomoyuki Takada , Yoshinobu Ono
IPC分类号： H01L2120
CPC分类号： H01L33/32 , H01L29/201 , H01L29/205 , H01L33/007 , H01S5/32341
摘要： The present invention provides for a high quality Group III-V compound semiconductor, a method of manufacturing the same, and a light emitting element with an excellent emission characteristic which incorporates such a Group III-V compound semiconductor. The Group III-V compound semiconductor has a structure in which a fifth-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula GaaAlbN (a+b=1, 0≦a≦1, 0≦b≦1), a fourth-layer having a lower impurity concentration, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gaa′Alb′N (a′+b′=1, 0≦a′≦1, 0≦b′≦1), and a first-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula InxGayAlzN (x+y+z=1, 0
摘要翻译： 本发明提供了一种高品质的III-V族化合物半导体，其制造方法和具有优异的发射特性的发光元件，其结合了这种III-V族化合物半导体。 III-V族化合物半导体具有这样的结构，其中由通式GaaAlbN（a + b =1,0,0≤a≤1）表示的III-V族化合物半导体形成的第五层 ，0 <= b <= 1），由通式Gaa'Alb'N（a'+ b'= 1）表示的III-V族化合物半导体形成的具有较低杂质浓度的第四层， 1，0 <= a'<= 1，0 <= b'<= 1），以及由通式In x Ga y Al z N（x + y）表示的III-V族化合物半导体形成的第一层 + z = 1,0
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