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公开(公告)号：US07250352B2
公开(公告)日：2007-07-31
申请号：US10421921
申请日：2003-04-24
IPC分类号： H01L21/46
CPC分类号： H05K3/0052 , H01L2924/01023 , H01L2924/14 , H01L2924/19105 , H05K1/056 , H05K3/284 , H05K2201/09036 , H05K2201/0909 , H05K2201/09745 , H05K2203/0228 , H05K2203/1572 , H05K2203/302
摘要： In preferred embodiments, a method of manufacturing a hybrid integrated circuit device is provided, in which a plurality of circuit substrates 10 are manufactured from a single metal substrate 10A′ by dicing. In some embodiments, the method includes: preparing a metal substrate 10A′ having an insulating layer 11 formed on the top surface thereof; forming a plurality of conductive patterns 12 on the top surface of insulating layer 11; forming grooves 20 in lattice form on the rear surface of metal substrate 10B′; mounting hybrid integrated circuits onto conductive patterns 12; and separating individual circuit substrates 10 with, for example, a rotatable cutter.
摘要翻译： 在优选实施例中，提供了一种制造混合集成电路器件的方法，其中通过切割由单个金属衬底10A'制造多个电路衬底10。 在一些实施例中，该方法包括：制备具有形成在其顶表面上的绝缘层11的金属基底10A' 在绝缘层11的顶表面上形成多个导电图案12; 在金属基板10B'的后表面上形成格子状的槽20; 将混合集成电路安装到导电图案12上; 并且用例如可旋转切割器分离各个电路基板10。
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公开(公告)号：US06956252B2
公开(公告)日：2005-10-18
申请号：US10421920
申请日：2003-04-24
CPC分类号： H05K3/0052 , H01L24/97 , H01L2224/48091 , H01L2224/73265 , H01L2924/14 , H01L2924/19105 , H05K1/056 , H05K3/284 , H05K2201/09036 , H05K2201/0909 , H05K2201/09745 , H05K2203/0228 , H05K2203/1572 , H05K2203/302 , H01L2924/00014 , H01L2924/00
摘要： In preferred embodiments, a compact a hybrid integrated circuit device 1 can be provided. A conductive pattern 12 is formed on the top surface of a circuit substrate 10, on the top surface of which an insulating layer 11 has been provided. Conductive pattern 12 is formed over the entirety of the top surface of the circuit substrate. Specifically, conductive pattern 12 is also formed at parts within 2 mm from the peripheral ends of circuit substrate 10. Also, a heat sink 13A or other circuit element 13 with some height can be positioned near a peripheral end part of circuit substrate 10. By arranging hybrid integrated circuit device 1, the degree of integration of hybrid integrated circuit is improved. Thus, in a case where the same circuit as a prior-art example is formed, the size of the entire hybrid integrated circuit device can be made small.
摘要翻译： 在优选实施例中，可以提供一种紧凑的混合集成电路装置1。 导电图案12形成在电路基板10的顶表面上，其顶表面上设置有绝缘层11。 导电图案12形成在电路基板的整个顶表面上。 具体地，导电图案12也形成在距电路基板10的外周端2mm以内的部分。 此外，具有一定高度的散热器13A或其他电路元件13可以位于电路基板10的外围端部附近。 通过设置混合集成电路装置1，提高了混合集成电路的集成度。 因此，在形成与现有技术例子相同的电路的情况下，可以使整个混合集成电路器件的尺寸变小。
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公开(公告)号：US20090101560A1
公开(公告)日：2009-04-23
申请号：US12211617
申请日：2008-09-16
IPC分类号： C01F11/22
CPC分类号： B01D71/26 , B01D61/147 , B01D65/02 , B01D67/0088 , B01D2311/04 , B01D2311/08 , B01D2315/06 , B01D2321/04 , B01D2321/185 , B01D2323/283 , C02F1/5236 , C02F1/66 , C02F11/121 , C02F2101/14 , C02F2103/346 , C02F2209/003 , C02F2209/06 , B01D2311/12 , B01D2311/2646 , B01D2311/2649
摘要： When hydrofluoric acid is introduced into a treatment tank in a pH adjustment unit, an alkali chemical is also introduced thereinto to set pH of first treated water in the treatment tank to be larger than pH of the wastewater. Moreover, a third path (circulating path) is connected to the treatment tank to circulate the first treated water. Then, pH adjustment is performed until second treated water having a pH value within a desired range is generated. The second treated water having the pH value adjusted to a desired value after the pH adjustment is transferred to the reaction tank for reaction with calcium. Thus, deterioration in treatment efficiency can be prevented. Moreover, the pH meter is provided in the circulating path and never comes into direct contact with the wastewater. Thus, the pH meter can be protected from the hydrofluoric acid.
摘要翻译： 当将氢氟酸引入pH调节单元中的处理槽中时，还引入碱性化学物质以使处理槽中的第一处理水的pH值大于废水的pH值。 此外，将第三路径（循环路径）连接到处理槽以使第一处理水循环。 然后，进行pH调节，直到产生pH值在期望范围内的第二处理水。 在pH调节后将pH值调节至所需值的第二处理水转移到反应罐中以与钙反应。 因此，可以防止治疗效率的劣化。 此外，pH计设置在循环路径中，不会与废水直接接触。 因此，可以保护pH计免于氢氟酸。
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