公开(公告)号：US20100282291A1

公开(公告)日：2010-11-11

申请号：US12746486

申请日：2008-12-05

Applicant: Masahiro Goto ,  Wataru Yoshida ,  Toshiaki Sasaki

Inventor： Masahiro Goto ,  Wataru Yoshida ,  Toshiaki Sasaki

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/03921 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/1884 ,  Y02E10/50

Abstract: A thin film photoelectric converter including a transparent conductive layer, a laser light absorption layer, a back electrode layer, a semiconductor photoelectric conversion layer and a transparent electrode layer stacked on a translucent substrate. The laser light absorption layer is parted into regions by first kind parting line grooves, and the photoelectric conversion layer is parted into regions by third kind parting line grooves penetrating the laser light absorption layer, the rear surface electrode layer and the photoelectric conversion layer. The transparent electrode layer is parted into regions by fourth kind parting line grooves penetrating the laser light absorption layer, the rear surface electrode layer, the photoelectric conversion layer and the transparent electrode layer. A receiving side transparent electrode region of one cell is electrically connected to a back electrode region of adjacent cell through the first kind groove, the transparent conductive layer and the third kind groove.

Abstract translation: 一种薄膜光电转换器，包括层叠在透光性基板上的透明导电层，激光吸收层，背面电极层，半导体光电转换层和透明电极层。 激光吸收层通过第一种分割线槽分为区域，光电转换层通过穿透激光吸收层，后表面电极层和光电转换层的第三种分割线槽分成区域。 透明电极层通过穿透激光吸收层，后表面电极层，光电转换层和透明电极层的第四种分割线槽分成区域。 一个电池单元的接收侧透明电极区域通过第一种沟槽，透明导电层和第三种沟槽电连接到相邻电池的背电极区域。

公开(公告)号：US09252306B2

公开(公告)日：2016-02-02

申请号：US12746486

申请日：2008-12-05

Applicant: Masahiro Goto ,  Wataru Yoshida ,  Toshiaki Sasaki

Inventor： Masahiro Goto ,  Wataru Yoshida ,  Toshiaki Sasaki

IPC: H01L31/0224 ,  H01L31/0392 ,  H01L31/046 ,  H01L31/18

CPC classification number: H01L31/03921 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/1884 ,  Y02E10/50

Abstract: A thin film photoelectric converter including a transparent conductive layer, a laser light absorption layer, a back electrode layer, a semiconductor photoelectric conversion layer and a transparent electrode layer stacked on a translucent substrate. The laser light absorption layer is parted into regions by first kind parting line grooves, and the photoelectric conversion layer is parted into regions by third kind parting line grooves penetrating the laser light absorption layer, the rear surface electrode layer and the photoelectric conversion layer. The transparent electrode layer is parted into regions by fourth kind parting line grooves penetrating the laser light absorption layer, the rear surface electrode layer, the photoelectric conversion layer and the transparent electrode layer. A receiving side transparent electrode region of one cell is electrically connected to a back electrode region of an adjacent cell through the first kind groove, the transparent conductive layer and the third kind groove.

Abstract translation: 一种薄膜光电转换器，包括层叠在透光性基板上的透明导电层，激光吸收层，背面电极层，半导体光电转换层和透明电极层。 激光吸收层通过第一种分割线槽分为区域，光电转换层通过穿透激光吸收层，后表面电极层和光电转换层的第三种分割线槽分成区域。 透明电极层通过穿透激光吸收层，后表面电极层，光电转换层和透明电极层的第四种分割线槽分成区域。 一个电池单元的接收侧透明电极区域通过第一种类的沟槽，透明导电层和第三类型的沟槽与相邻电池的背面电极区域电连接。

公开(公告)号：US20060174935A1

公开(公告)日：2006-08-10

申请号：US10563009

申请日：2004-07-12

Applicant: Toru Sawada ,  Yohel Koi ,  Toshiaki Sasaki ,  Masashi Yoshimi ,  Masahiro Goto ,  Kenji Yamamoto

Inventor： Toru Sawada ,  Yohel Koi ,  Toshiaki Sasaki ,  Masashi Yoshimi ,  Masahiro Goto ,  Kenji Yamamoto

IPC: H01L31/00

CPC classification number: H01L31/077 ,  H01L31/056 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/548

Abstract: According to the present invention, sufficient light trapping effect can be exhibited and series resistance can be kept small, by sequentially forming a silicon based low refractive index layer and a thin silicon based interface layer on a backside of a photoelectric conversion layer observed from a light incident side, and as a result a silicon based thin film solar cell may be provided efficiently and at low cost.

Abstract translation: 根据本发明，通过从光线观察到的光电转换层的背面顺序地形成硅基低折射率层和薄硅基界面层，可以发挥足够的光捕获效果并且串联电阻较小 因此，可以以低成本有效地提供硅基薄膜太阳能电池。

公开(公告)号：US07847186B2

公开(公告)日：2010-12-07

申请号：US10563009

申请日：2004-07-12

Applicant: Toru Sawada ,  Yohei Koi ,  Toshiaki Sasaki ,  Masashi Yoshimi ,  Masahiro Goto ,  Kenji Yamamoto

Inventor： Toru Sawada ,  Yohei Koi ,  Toshiaki Sasaki ,  Masashi Yoshimi ,  Masahiro Goto ,  Kenji Yamamoto

IPC: H01L31/00

CPC classification number: H01L31/077 ,  H01L31/056 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/548

Abstract: According to the present invention, sufficient light trapping effect can be exhibited and series resistance can be kept small, by sequentially forming a silicon based low refractive index layer and a thin silicon based interface layer on a backside of a photoelectric conversion layer observed from a light incident side, and as a result a silicon based thin film solar cell may be provided efficiently and at low cost.

Abstract translation: 根据本发明，通过从光线观察到的光电转换层的背面顺序地形成硅基低折射率层和薄硅基界面层，可以发挥足够的光捕获效果并且串联电阻较小 因此，可以以低成本有效地提供硅基薄膜太阳能电池。

公开(公告)号：US08658885B2

公开(公告)日：2014-02-25

申请号：US12993467

申请日：2009-05-15

Applicant: Takashi Kikuchi ,  Toshiaki Sasaki

Inventor： Takashi Kikuchi ,  Toshiaki Sasaki

IPC: H01L31/00 ,  B05D1/18 ,  B05D3/00

CPC classification number: H01L31/02168 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/076 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: Provided is a substrate for a thin-film photoelectric conversion device which makes it possible to produce the device having improved characteristics at low cost and high productivity. The substrate includes a transparent base member, with a transparent underlying layer and a transparent electrode layer successively stacked on one main surface of the transparent base member. The underlying layer includes transparent insulating fine particles and transparent binder, and the particles are dispersed to cover the one main surface with a coverage factor of particles ranging from 30% or more to less than 80%. An antireflection layer is provided on the other main surface of the transparent base. The antireflection layer includes transparent insulating fine particles and transparent binder, and the particles are dispersed to cover the other main surface with a coverage factor greater than the underlying layer. The transparent electrode layer contains zinc oxide deposited by low-pressure CVD method.

Abstract translation: 本发明提供一种薄膜光电转换装置用基板，能够以低成本，高生产率制造具有改善特性的装置。 基板包括透明基底构件，透明基底层和依次层叠在透明基底构件的一个主表面上的透明电极层。 下层包括透明绝缘细颗粒和透明粘合剂，并且颗粒被分散以覆盖一个主表面，其覆盖因子为30％以上至小于80％。 在透明基材的另一个主表面上设置防反射层。 抗反射层包括透明绝缘细颗粒和透明粘合剂，并且颗粒被分散以覆盖另一个主表面，覆盖因子大于下层。 透明电极层含有通过低压CVD法沉积的氧化锌。

公开(公告)号：US08092399B2

公开(公告)日：2012-01-10

申请号：US12222828

申请日：2008-08-18

Applicant: Toshiaki Sasaki

Inventor： Toshiaki Sasaki

IPC: A61B5/103 ,  A61B5/117

CPC classification number: A61B5/0205 ,  A61B5/0816 ,  A61B5/11 ,  A61B5/113 ,  A61B5/4806 ,  A61B5/4818 ,  A61B5/6887 ,  A61B5/6892 ,  A61B2562/0247

Abstract: Even if a mattress or the like suffers long-term deterioration, a sleep state measuring apparatus is provided which can set a suitable amplification factor A of a biosignal. The sleep state measuring apparatus detects the biosignal which changes depending on the sleep state of a person who gets on the mattress filled with water, amplifies the biosignal, and estimates the sleep state based on the biosignal. A static component P of the mattress internal pressure detected by a biosignal sensor is first obtained (S 11). The mattress internal pressure is the pressure of water in the mattress. From the static component P of the mattress internal pressure, a fluctuation part ΔV of the mattress internal pressure depending on the value is specified (S 12). Each value of the fluctuation part ΔV of the mattress internal pressure is obtained beforehand by applying a predetermined load, and changing the static component P of the mattress internal pressure. The above-described amplification factor A is calculated by correcting predetermined standard amplification factor A0 with the specified fluctuation part ΔV (S 13).

Abstract translation: 即使床垫等遭受长期恶化，也可以设置睡眠状态测定装置，该睡眠状态测定装置能够设定生物信号的合适的放大倍数A. 睡眠状态测量装置检测根据进入充满水的床垫的人的睡眠状态而变化的生物信号，放大生物信号，并基于生物信号估计睡眠状态。 首先获得由生物信号传感器检测到的床垫内部压力的静态分量P（S11）。 床垫的内部压力是床垫中的水压。 根据床垫内部压力的静态成分P，规定床垫内部压力的变动量＆Dgr; V，取决于该值。（S12）。 通过施加预定的负荷，改变床垫内压的静态成分P，预先获得床垫内压的变动部分＆Dgr; V的每个值。 通过用指定的波动部分＆Dgr; V（S 13）校正预定的标准放大因子A0来计算上述放大因子A.

公开(公告)号：US20090133753A1

公开(公告)日：2009-05-28

申请号：US11991141

申请日：2006-07-25

Applicant: Toshiaki Sasaki ,  Kenji Yamamoto

Inventor： Toshiaki Sasaki ,  Kenji Yamamoto

IPC: H01L31/00 ,  B05D5/12

CPC classification number: H01L31/075 ,  H01L31/076 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

Abstract: In order to improve photoelectric conversion properties of a silicon-based thin-film photoelectric converter to which a conductive SiOx layer is inserted to obtain an optical confinement effect, the silicon-based thin-film photoelectric converter according to the present invention includes an i-type photoelectric conversion layer of hydrogenated amorphous silicon or an alloy thereof, an i-type buffer layer made of hydrogenated amorphous silicon, and an n-type Si1-xOx layer (x is 0.25-0.6) stacked successively, wherein the buffer layer has a higher hydrogen concentration at its interface with and as compared with the photoelectric conversion layer and has a thickness of at least 5 nm and at most 50 nm. Accordingly, generation of silicon crystal phase parts and reduction of resistivity are promoted in the n-type Si1-xOx layer, contact resistance at the interface is reduced, and FF of the photoelectric converter is improved, so that the photoelectric converter achieves improved properties.

Abstract translation: 为了提高插入导电性SiO x层的硅系薄膜光电转换器的光电转换性能，得到光限制效果，本发明的硅系薄膜光电转换元件包括：i- 氢化非晶硅或其合金的类型光电转换层，由氢化非晶硅制成的i型缓冲层和n型Si1-xOx层（x为0.25-0.6），其中缓冲层具有 在与光电转换层相比的界面处的氢浓度较高，并且具有至少5nm至最多50nm的厚度。 因此，在n型Si1-xOx层中促进硅晶相的产生和电阻率的降低，界面处的接触电阻降低，光电转换器的FF提高，光电转换器实现了改善的性能。

公开(公告)号：US20060127833A1

公开(公告)日：2006-06-15

申请号：US11350476

申请日：2006-02-09

Applicant: Mamoru Shoji ,  Norio Ikeda ,  Toshiaki Sasaki

Inventor： Mamoru Shoji ,  Norio Ikeda ,  Toshiaki Sasaki

IPC: F27B9/28

CPC classification number: D01F9/08

Abstract: A process for producing a continuous alumina fiber blanket by heat treating an alumina fiber precursor formed from a spinning solution containing an aluminum compound, by using a specific high-temperature furnace capable of high-temperature heat treatment. According to this process, a continuous sheet (W) of alumina fiber precursor formed from a spinning solution containing an aluminum compound is supplied continuously into a high-temperature furnace and subjected to heat treatment while being conveyed in one direction by plural conveying mechanisms (2, 3) disposed in said high-temperature furnace. In this operation, the speed of said conveying mechanisms is reduced progressively in the direction of conveyance in correspondence to the rate of heat shrinkage of the continuous sheet (W) of alumina fiber precursor, thereby to lessen fiber crush in the alumina fiber precursor and obtain a continuous alumina fiber blanket with uniform thickness and high bulk density as well as high strength.

Abstract translation: 通过使用能够进行高温热处理的特定的高温炉，热处理由含铝化合物的纺丝溶液形成的氧化铝纤维前体来制造连续的氧化铝纤维毡的方法。 根据该方法，将由包含铝化合物的纺丝溶液形成的氧化铝纤维前体的连续片材（W）连续供给到高温炉中，并通过多个输送机构（2）沿一个方向输送进行热处理 ，3）设置在所述高温炉中。 在该操作中，与氧化铝纤维前体的连续片材（W）的热收缩率相对应地，输送方向上所述输送机构的速度逐渐减小，从而减少氧化铝纤维前体中的纤维粉碎，得到 具有均匀厚度和高堆积密度以及高强度的连续氧化铝纤维毯。

公开(公告)号：US07033537B2

公开(公告)日：2006-04-25

申请号：US10349833

申请日：2003-01-23

Applicant: Mamoru Shoji ,  Norio Ikeda ,  Toshiaki Sasaki

Inventor： Mamoru Shoji ,  Norio Ikeda ,  Toshiaki Sasaki

IPC: B29C31/00

CPC classification number: D01F9/08

Abstract: A process for producing a continuous alumina fiber blanket by heat treating an alumina fiber precursor formed from a spinning solution containing an aluminum compound, by using a specific high-temperature furnace capable of high-temperature heat treatment. According to this process, a continuous sheet (W) of alumina fiber precursor formed from a spinning solution containing an aluminum compound is supplied continuously into a high-temperature furnace and subjected to heat treatment while being conveyed in one direction by plural conveying mechanisms (2, 3) disposed in said high-temperature furnace. In this operation, the speed of said conveying mechanisms is reduced progressively in the direction of conveyance in correspondence to the rate of heat shrinkage of the continuous sheet (W) of alumina fiber precursor, thereby to lessen fiber crush in the alumina fiber precursor and obtain a continuous alumina fiber blanket with uniform thickness and high bulk density as well as high strength.

公开(公告)号：US20060055341A1

公开(公告)日：2006-03-16

申请号：US10542415

申请日：2004-01-16

Applicant: Koji Watanabe ,  Kiyoaki Uchihashi ,  Hisaji Ito ,  Toshiaki Sasaki ,  Junichi Hasegawa ,  Katsuyoshi Nakada

Inventor： Koji Watanabe ,  Kiyoaki Uchihashi ,  Hisaji Ito ,  Toshiaki Sasaki ,  Junichi Hasegawa ,  Katsuyoshi Nakada

IPC: H05B37/02

CPC classification number: H05B41/2928 ,  H05B41/386

Abstract: In a chopper circuit, output power is controllable with a direct current power source as a power source, and a smoothing capacitor is connected between output terminals of the chopper circuit. A polarity inversion circuit applies an alternating voltage to a high pressure discharge lamp with a voltage across the smoothing capacitor as a power source. The output power of the chopper circuit and an inversion frequency of the polarity inversion circuit are controlled by a control circuit based upon a terminal voltage of the smoothing capacitor, which is detected by a voltage detecting circuit. In the control circuit, a switch voltage is set for defining a range of voltages detected by the voltage detecting circuit, and the inversion frequency is changed in plural stages according to the magnitude relation between the detected voltage and the switch voltage. The inversion frequency corresponding to electric power applied to the high pressure discharge lamp is set with respect to each range of lamp voltages, to thereby inhibit occurrence of an arc jump.