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公开(公告)号：US20060174935A1
公开(公告)日：2006-08-10
申请号：US10563009
申请日：2004-07-12
申请人： Toru Sawada , Yohel Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
发明人： Toru Sawada , Yohel Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/077 , H01L31/056 , H01L31/075 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： According to the present invention, sufficient light trapping effect can be exhibited and series resistance can be kept small, by sequentially forming a silicon based low refractive index layer and a thin silicon based interface layer on a backside of a photoelectric conversion layer observed from a light incident side, and as a result a silicon based thin film solar cell may be provided efficiently and at low cost.
摘要翻译： 根据本发明，通过从光线观察到的光电转换层的背面顺序地形成硅基低折射率层和薄硅基界面层，可以发挥足够的光捕获效果并且串联电阻较小 因此，可以以低成本有效地提供硅基薄膜太阳能电池。
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公开(公告)号：US07847186B2
公开(公告)日：2010-12-07
申请号：US10563009
申请日：2004-07-12
申请人： Toru Sawada , Yohei Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
发明人： Toru Sawada , Yohei Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/077 , H01L31/056 , H01L31/075 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： According to the present invention, sufficient light trapping effect can be exhibited and series resistance can be kept small, by sequentially forming a silicon based low refractive index layer and a thin silicon based interface layer on a backside of a photoelectric conversion layer observed from a light incident side, and as a result a silicon based thin film solar cell may be provided efficiently and at low cost.
摘要翻译： 根据本发明，通过从光线观察到的光电转换层的背面顺序地形成硅基低折射率层和薄硅基界面层，可以发挥足够的光捕获效果并且串联电阻较小 因此，可以以低成本有效地提供硅基薄膜太阳能电池。
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公开(公告)号：US20060097259A1
公开(公告)日：2006-05-11
申请号：US10543516
申请日：2004-05-28
CPC分类号： H01L31/076 , H01L31/046 , Y02E10/548
摘要： A thin film photoelectric converter, especially an integrated thin film photoelectric converter having improved photoelectric conversion efficiency is provided by controlling an open-circuit voltage and a fill factor so as not be small in a thin film photoelectric converter including a crystalline silicon photoelectric conversion unit. The thin film photoelectric converter by the present invention has at least a transparent electrode film, a crystalline silicon photoelectric conversion unit, and a back electrode film formed sequentially on one principal surface of a transparent substrate, and the converter has a whitish discoloring area on a part of a surface of the converter after formation of the crystalline silicon photoelectric conversion unit. A percentage of dimensions of the whitish discoloring area preferably is not more than 5% of a dimension of the photoelectric conversion area. A thin film photoelectric converter of the present invention is preferably an integrated thin film photoelectric converter.
摘要翻译： 通过在包括晶体硅光电转换单元的薄膜光电转换器中控制开路电压和填充因子以不小而提供薄膜光电转换器，特别是具有改进的光电转换效率的集成薄膜光电转换器。 本发明的薄膜光电转换器至少在透明基板的一个主表面上依次形成透明电极膜，晶体硅光电转换单元和背面电极膜，并且转换器具有白色变色区域 形成晶体硅光电转换单元后的转换器表面的一部分。 白色变色区域的尺寸的百分比优选不大于光电转换区域的尺寸的5％。 本发明的薄膜光电转换器优选为集成薄膜光电转换器。
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公开(公告)号：US20060043517A1
公开(公告)日：2006-03-02
申请号：US10530283
申请日：2004-07-15
IPC分类号： H01L31/105
CPC分类号： H01L31/077 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.
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公开(公告)号：US07550665B2
公开(公告)日：2009-06-23
申请号：US10530283
申请日：2004-07-15
CPC分类号： H01L31/077 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.
摘要翻译： 在堆叠层型光电转换装置中，在基板上层叠多个光电转换单元，每个基板包括一个导电型层，本质上为半导体的光电转换层和相反的导电型层 从光线一方的命令。 在与前光电转换单元相邻布置的背光电转换单元中相对靠近光入射侧的前光电转换单元中的至少一个导电类型层和一个导电型层中的至少一个包括硅复合物 至少在其一部分。 硅复合层的厚度大于20nm且小于130nm，氧浓度大于25原子％且小于60原子％，并且包括在硅和氧的非晶合金相中的富硅相部分 。
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公开(公告)号：US07678992B2
公开(公告)日：2010-03-16
申请号：US10543516
申请日：2004-05-28
IPC分类号： H01L31/00
CPC分类号： H01L31/076 , H01L31/046 , Y02E10/548
摘要： A thin film photoelectric converter, especially an integrated thin film photoelectric converter having improved photoelectric conversion efficiency is provided by controlling an open-circuit voltage and a fill factor so as not be small in a thin film photoelectric converter including a crystalline silicon photoelectric conversion unit. The thin film photoelectric converter by the present invention has at least a transparent electrode film, a crystalline silicon photoelectric conversion unit, and a back electrode film formed sequentially on one principal surface of a transparent substrate, and the converter has a whitish discoloring area on a part of a surface of the converter after formation of the crystalline silicon photoelectric conversion unit. A percentage of dimensions of the whitish discoloring area preferably is not more than 5% of a dimension of the photoelectric conversion area. A thin film photoelectric converter of the present invention is preferably an integrated thin film photoelectric converter.
摘要翻译： 通过在包括晶体硅光电转换单元的薄膜光电转换器中控制开路电压和填充因子以不小而提供薄膜光电转换器，特别是具有改进的光电转换效率的集成薄膜光电转换器。 本发明的薄膜光电转换器至少在透明基板的一个主表面上依次形成透明电极膜，晶体硅光电转换单元和背面电极膜，并且转换器具有白色变色区域 形成晶体硅光电转换单元后的转换器表面的一部分。 白色变色区域的尺寸的百分比优选不大于光电转换区域的尺寸的5％。 本发明的薄膜光电转换器优选为集成薄膜光电转换器。
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7.发明申请公开(公告)号：US20100282291A1
公开(公告)日：2010-11-11
申请号：US12746486
申请日：2008-12-05
申请人： Masahiro Goto , Wataru Yoshida , Toshiaki Sasaki
发明人： Masahiro Goto , Wataru Yoshida , Toshiaki Sasaki
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/03921 , H01L31/022425 , H01L31/022466 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/1884 , Y02E10/50
摘要： A thin film photoelectric converter including a transparent conductive layer, a laser light absorption layer, a back electrode layer, a semiconductor photoelectric conversion layer and a transparent electrode layer stacked on a translucent substrate. The laser light absorption layer is parted into regions by first kind parting line grooves, and the photoelectric conversion layer is parted into regions by third kind parting line grooves penetrating the laser light absorption layer, the rear surface electrode layer and the photoelectric conversion layer. The transparent electrode layer is parted into regions by fourth kind parting line grooves penetrating the laser light absorption layer, the rear surface electrode layer, the photoelectric conversion layer and the transparent electrode layer. A receiving side transparent electrode region of one cell is electrically connected to a back electrode region of adjacent cell through the first kind groove, the transparent conductive layer and the third kind groove.
摘要翻译： 一种薄膜光电转换器，包括层叠在透光性基板上的透明导电层，激光吸收层，背面电极层，半导体光电转换层和透明电极层。 激光吸收层通过第一种分割线槽分为区域，光电转换层通过穿透激光吸收层，后表面电极层和光电转换层的第三种分割线槽分成区域。 透明电极层通过穿透激光吸收层，后表面电极层，光电转换层和透明电极层的第四种分割线槽分成区域。 一个电池单元的接收侧透明电极区域通过第一种沟槽，透明导电层和第三种沟槽电连接到相邻电池的背电极区域。
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8.发明授权公开(公告)号：US09252306B2
公开(公告)日：2016-02-02
申请号：US12746486
申请日：2008-12-05
申请人： Masahiro Goto , Wataru Yoshida , Toshiaki Sasaki
发明人： Masahiro Goto , Wataru Yoshida , Toshiaki Sasaki
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/046 , H01L31/18
CPC分类号： H01L31/03921 , H01L31/022425 , H01L31/022466 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/1884 , Y02E10/50
摘要： A thin film photoelectric converter including a transparent conductive layer, a laser light absorption layer, a back electrode layer, a semiconductor photoelectric conversion layer and a transparent electrode layer stacked on a translucent substrate. The laser light absorption layer is parted into regions by first kind parting line grooves, and the photoelectric conversion layer is parted into regions by third kind parting line grooves penetrating the laser light absorption layer, the rear surface electrode layer and the photoelectric conversion layer. The transparent electrode layer is parted into regions by fourth kind parting line grooves penetrating the laser light absorption layer, the rear surface electrode layer, the photoelectric conversion layer and the transparent electrode layer. A receiving side transparent electrode region of one cell is electrically connected to a back electrode region of an adjacent cell through the first kind groove, the transparent conductive layer and the third kind groove.
摘要翻译： 一种薄膜光电转换器，包括层叠在透光性基板上的透明导电层，激光吸收层，背面电极层，半导体光电转换层和透明电极层。 激光吸收层通过第一种分割线槽分为区域，光电转换层通过穿透激光吸收层，后表面电极层和光电转换层的第三种分割线槽分成区域。 透明电极层通过穿透激光吸收层，后表面电极层，光电转换层和透明电极层的第四种分割线槽分成区域。 一个电池单元的接收侧透明电极区域通过第一种类的沟槽，透明导电层和第三类型的沟槽与相邻电池的背面电极区域电连接。
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9.发明申请公开(公告)号：US20090133753A1
公开(公告)日：2009-05-28
申请号：US11991141
申请日：2006-07-25
申请人： Toshiaki Sasaki , Kenji Yamamoto
发明人： Toshiaki Sasaki , Kenji Yamamoto
CPC分类号： H01L31/075 , H01L31/076 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： In order to improve photoelectric conversion properties of a silicon-based thin-film photoelectric converter to which a conductive SiOx layer is inserted to obtain an optical confinement effect, the silicon-based thin-film photoelectric converter according to the present invention includes an i-type photoelectric conversion layer of hydrogenated amorphous silicon or an alloy thereof, an i-type buffer layer made of hydrogenated amorphous silicon, and an n-type Si1-xOx layer (x is 0.25-0.6) stacked successively, wherein the buffer layer has a higher hydrogen concentration at its interface with and as compared with the photoelectric conversion layer and has a thickness of at least 5 nm and at most 50 nm. Accordingly, generation of silicon crystal phase parts and reduction of resistivity are promoted in the n-type Si1-xOx layer, contact resistance at the interface is reduced, and FF of the photoelectric converter is improved, so that the photoelectric converter achieves improved properties.
摘要翻译： 为了提高插入导电性SiO x层的硅系薄膜光电转换器的光电转换性能，得到光限制效果，本发明的硅系薄膜光电转换元件包括：i- 氢化非晶硅或其合金的类型光电转换层，由氢化非晶硅制成的i型缓冲层和n型Si1-xOx层（x为0.25-0.6），其中缓冲层具有 在与光电转换层相比的界面处的氢浓度较高，并且具有至少5nm至最多50nm的厚度。 因此，在n型Si1-xOx层中促进硅晶相的产生和电阻率的降低，界面处的接触电阻降低，光电转换器的FF提高，光电转换器实现了改善的性能。
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10.发明授权公开(公告)号：US07960646B2
公开(公告)日：2011-06-14
申请号：US11991141
申请日：2006-07-25
申请人： Toshiaki Sasaki , Kenji Yamamoto
发明人： Toshiaki Sasaki , Kenji Yamamoto
CPC分类号： H01L31/075 , H01L31/076 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： In order to improve photoelectric conversion properties of a silicon-based thin-film photoelectric converter to which a conductive SiOx layer is inserted to obtain an optical confinement effect, the silicon-based thin-film photoelectric converter according to the present invention includes an i-type photoelectric conversion layer of hydrogenated amorphous silicon or an alloy thereof, an i-type buffer layer made of hydrogenated amorphous silicon, and an n-type Si1-xOx layer (x is 0.25-0.6) stacked successively, wherein the buffer layer has a higher hydrogen concentration at its interface with and as compared with the photoelectric conversion layer and has a thickness of at least 5 nm and at most 50 nm. Accordingly, generation of silicon crystal phase parts and reduction of resistivity are promoted in the n-type Si1-xOx layer, contact resistance at the interface is reduced, and FF of the photoelectric converter is improved, so that the photoelectric converter achieves improved properties.
摘要翻译： 为了提高插入导电性SiO x层的硅系薄膜光电转换器的光电转换性能，得到光限制效果，本发明的硅系薄膜光电转换元件包括：i- 氢化非晶硅或其合金的类型光电转换层，由氢化非晶硅制成的i型缓冲层和n型Si1-xOx层（x为0.25-0.6），其中缓冲层具有 在与光电转换层相比的界面处的氢浓度较高，并且具有至少5nm至最多50nm的厚度。 因此，在n型Si1-xOx层中促进硅晶相的产生和电阻率的降低，界面处的接触电阻降低，光电转换器的FF提高，光电转换器实现了改善的性能。
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