Magnetic disk and method of making thereof
    2.
    发明授权
    Magnetic disk and method of making thereof 失效
    磁盘及其制造方法

    公开(公告)号:US06468598B1

    公开(公告)日:2002-10-22

    申请号:US09598454

    申请日:2000-06-22

    IPC分类号: B05D500

    摘要: It is an object of the present invention to provide a method of making a magnetic disk having a uniform textured structure with micro-waviness of fabrication depth of less than 20 nm, preferably less than 10 nm, and a local depth deviation of less than 5%, in which texture patterns are characterized by the fact that lateral surfaces of the structure are sloped or curved. The object has been achieved in a method for making a magnetic disk, having micro-waviness on a fabrication surface of a substrate for reducing dynamic friction and controlling head float, by rotating and irradiating the fabrication surface with a high energy beam from a beam surface at an inclined angle to the substrate surface. The surface is irradiated through a shielding mask having a specific pattern, so as to produce a transcription pattern on the substrate surface to produce a textured structure with micro-waviness having sloped or curved side surfaces.

    摘要翻译: 本发明的目的是提供一种制造具有均匀纹理结构的磁盘的方法,其制造深度小于20nm,优选小于10nm,局部深度偏差小于5 %,其中纹理图案的特征在于结构的侧表面是倾斜的或弯曲的。 该目的已经在制造磁盘的方法中实现,其通过用来自梁表面的高能量光束旋转和照射制造表面而在基板的制造表面上具有微波纹以减少动态摩擦和控制磁头浮动 与基板表面成倾斜的角度。 通过具有特定图案的屏蔽掩模照射该表面,以在基板表面上产生转印图案,以产生具有倾斜或弯曲侧表面的微波纹的纹理结构。

    Magnetic recording disk
    4.
    发明授权
    Magnetic recording disk 失效
    磁记录盘

    公开(公告)号:US06194048B1

    公开(公告)日:2001-02-27

    申请号:US09165637

    申请日:1998-10-02

    IPC分类号: B32B302

    摘要: A magnetic recording disk having on its surface a texture structure of fine surface irregularities with reduced variations, which is suitable for high-density magnetic recording, and a method of manufacturing such a magnetic recording disk are provided. The magnetic recording disk has a substrate 11, 12 (16) coated on a surface thereof with a magnetic layer 13, a carbon layer 14, and a lubricating film 15. The substrate has on a surface thereof a texture structure of fine surface irregularities for reducing friction when the substrate is brought into contact with a head and controlling an amount of lift of the head. The fine surface irregularities have a height of 20 nm or less and are formed from a pattern shape or profile of a shield with a high-speed atomic beam emitted from a high-speed atomic beam source.

    摘要翻译: 一种磁记录盘,其表面具有适合于高密度磁记录的具有减小的变化的细小表面凹凸的纹理结构和制造这种磁记录盘的方法。 磁记录盘具有在其表面上涂覆有磁性层13,碳层14和润滑膜15的基板11,12(16)。该基板在其表面上具有细小的表面凹凸的纹理结构,用于 当衬底与头部接触并控制头部的提升量时,减小摩擦。 微细表面凹凸具有20nm以下的高度,并且由具有从高速原子束源发射的高速原子束的屏蔽的图案形状或轮廓形成。

    Beam processing apparatus
    5.
    发明授权
    Beam processing apparatus 有权
    梁加工设备

    公开(公告)号:US06849857B2

    公开(公告)日:2005-02-01

    申请号:US10471610

    申请日:2002-03-22

    摘要: A beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3), first electrode (4) disposed in the vacuum chamber (3), and a second electrode (5) disposed upstream of the first electrode (4) in the vacuum chamber (3). The beam processing apparatus further comprises a voltage applying unit for applying a variable voltage between the first electrode (4) and the second electrode (5) to alternately extract positive ions (6) and negative ions from the plasma generated by the plasma generator.

    摘要翻译: 光束处理装置包括用于保持工件(X)的工件保持器(20),用于在真空室(3)中产生等离子体的等离子体发生器,设置在真空室(3)中的第一电极(4) 第二电极(5),设置在真空室(3)中的第一电极(4)的上游。 光束处理装置还包括用于在第一电极(4)和第二电极(5)之间施加可变电压以从等离子体发生器产生的等离子体中交替地提取正离子(6)和负离子的电压施加单元。

    Etching method and apparatus
    6.
    发明申请
    Etching method and apparatus 失效
    蚀刻方法和装置

    公开(公告)号:US20050020070A1

    公开(公告)日:2005-01-27

    申请号:US10484502

    申请日:2002-09-24

    摘要: An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder (21) and the plasma generator (10, 20), and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The etching apparatus further comprises a voltage applying unit (25, 26) for applying a voltage between the orifice electrode (4) and the grid electrode (5) to accelerate ions from the plasma (30) generated by the plasma generator (10, 20) and to pass the extracted ions through the orifices (4a) in the orifice electrode (4), for generating a collimated neutral particle beam having an energy ranging from 10 eV to 50 eV.

    摘要翻译: 蚀刻装置包括用于保持工件(X)的工件保持器(21),用于在真空室(3)中产生等离子体(30)的等离子体发生器(10,20),设置在真空室 工件保持器(21)和等离子体发生器(10,20)以及设置在真空室(3)中的孔电极(4)上游的栅电极(5)。 孔口电极(4)具有限定在其中的孔(4a)。 蚀刻装置还包括用于在孔电极(4)和栅电极(5)之间施加电压的电压施加单元(25,26),以加速由等离子体发生器(10,20)产生的等离子体(30)的离子 并且将提取的离子通过孔口电极(4)中的孔(4a),以产生具有10eV至50eV的能量的准直中性粒子束。

    Neutral particle beam processing apparatus
    7.
    发明授权
    Neutral particle beam processing apparatus 失效
    中性粒子束处理装置

    公开(公告)号:US06858838B2

    公开(公告)日:2005-02-22

    申请号:US10451635

    申请日:2002-03-22

    摘要: A neutral particle beam processing apparatus comprises a plasma generator for generating positive ions and/or negative ions in a plasma, a pair of electrodes (5, 6) involving the plasma generated by the plasma generator therebetween, and a power supply (102) for applying a voltage between the pair of electrodes (5, 6). The pair of electrodes (5, 6) accelerate the positive ions and/or the negative ions generated by the plasma generator. The positive ions and/or the negative ions are neutralized and converted into neutral particles while being drifted in the plasma between the pair of electrodes (5, 6) toward a workpiece (X). The accelerated neutral particles pass through one of the electrodes (6) and are applied to the workpiece (X).

    摘要翻译: 一种中性粒子束处理装置,包括:等离子体发生器,用于在等离子体中产生正离子和/或负离子;一对电极(5,6),其包括由等离子体发生器在其间产生的等离子体;以及电源(102),用于 在所述一对电极(5,6)之间施加电压。 一对电极(5,6)加速由等离子体发生器产生的正离子和/或负离子。 正离子和/或负离子被中和并转化成中性粒子,同时在一对电极(5,6)之间的等离子体中朝向工件(X)漂移。 加速的中性粒子通过电极(6)之一并施加到工件(X)上。

    Etching method and apparatus
    8.
    发明授权
    Etching method and apparatus 失效
    蚀刻方法和装置

    公开(公告)号:US07314574B2

    公开(公告)日:2008-01-01

    申请号:US10484502

    申请日:2002-09-24

    IPC分类号: B44C1/22 H01L21/00

    摘要: An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder (21) and the plasma generator (10, 20), and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The etching apparatus further comprises a voltage applying unit (25, 26) for applying a voltage between the orifice electrode (4) and the grid electrode (5) to accelerate ions from the plasma (30) generated by the plasma generator (10, 20) and to pass the extracted ions through the orifices (4a) in the orifice electrode (4), for generating a collimated neutral particle beam having an energy ranging from 10 eV to 50 eV.

    摘要翻译: 蚀刻装置包括用于保持工件(X)的工件保持器(21),用于在真空室(3)中产生等离子体(30)的等离子体发生器(10,20),设置在真空室 工件保持器(21)和等离子体发生器(10,20)以及设置在真空室(3)中的孔电极(4)上游的栅电极(5)。 孔口电极(4)具有限定在其中的孔(4a)。 蚀刻装置还包括用于在孔电极(4)和栅电极(5)之间施加电压的电压施加单元(25,26),以加速由等离子体发生器(10,20)产生的等离子体(30)的离子 并且将提取的离子通过孔口电极(4)中的孔(4a),以产生具有10eV至50eV的能量的准直中性粒子束。

    Method of processing a surface of a workpiece
    9.
    发明授权
    Method of processing a surface of a workpiece 失效
    加工工件表面的方法

    公开(公告)号:US06909087B2

    公开(公告)日:2005-06-21

    申请号:US10471743

    申请日:2002-03-22

    摘要: A plasma generator generates positive ions and negative ions in a plasma. An ion extracting portion (4, 5) selectively extracts the generated positive ions and negative ions from the plasma, and accelerates the extracted ions in a predetermined direction. The positive ions and the negative ions are selectively applied to the workpiece (X). The plasma generator applies a high-frequency voltage to a process gas in a vacuum chamber for generating a plasma which is composed of positive ions and electrons from the process gas, and interrupts the high-frequency voltage for attaching the electrons to the residual process gas to generate negative ions. The application of the high-frequency voltage and the interruption of the high-frequency voltage are alternately repeated.

    摘要翻译: 等离子体发生器在等离子体中产生正离子和负离子。 离子提取部分(4,5)选择性地从等离子体中提取产生的正离子和负离子,并且在预定方向上加速提取的离子。 正离子和负离子选择性地施加到工件(X)上。 等离子体发生器对真空室中的处理气体施加高频电压,用于产生由来自处理气体的正离子和电子组成的等离子体,并且中断用于将电子附着到残余处理气体的高频电压 以产生负离子。 交替地重复施加高频电压和高频电压的中断。

    Neutral particle beam processing apparatus
    10.
    发明授权
    Neutral particle beam processing apparatus 失效
    中性粒子束处理装置

    公开(公告)号:US06909086B2

    公开(公告)日:2005-06-21

    申请号:US10471742

    申请日:2002-03-22

    CPC分类号: H05H3/02

    摘要: A neutral particle beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3) by applying a high-frequency electric field, an orifice electrode (4) disposed between the workpiece holder (20) and the plasma generator, and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The neutral particle beam processing apparatus further comprises a voltage applying unit for applying a voltage between the orifice electrode (4) which serves as an anode and the grid electrode (5) which serves as a cathode, while the high-frequency electric field applied by the plasma generator is being interrupted, to accelerate negative ions in the plasma generated by the plasma generator and pass the accelerated negative ions through the orifices (4a) in the orifice electrode (4).

    摘要翻译: 中性粒子束处理装置包括用于保持工件(X)的工件保持器(20),用于通过施加高频电场在真空室(3)中产生等离子体的等离子体发生器,孔电极(4) 设置在工件保持器(20)和等离子体发生器之间,以及栅极(5),设置在真空室(3)中的孔电极(4)的上游。 孔口电极(4)具有限定在其中的孔(4a)。 中性粒子束处理装置还包括用于在用作阳极的孔电极(4)和用作阴极的栅电极(5)之间施加电压的电压施加单元,同时施加的高频电场 等离子体发生器被中断,以加速由等离子体发生器产生的等离子体中的负离子,并使加速的负离子通过孔口电极(4)中的孔(4a)。