公开(公告)号：US5755314A

公开(公告)日：1998-05-26

申请号：US703665

申请日：1996-08-27

申请人： Masahiro Kanda ,  Naoki Uchiyama ,  Kouhei Ohsono ,  Takafumi Hattori

发明人： Masahiro Kanda ,  Naoki Uchiyama ,  Kouhei Ohsono ,  Takafumi Hattori

IPC分类号： F16D25/0638 ,  F16D25/12 ,  F16D13/72 ,  F16D25/064

CPC分类号： F16D25/0638 ,  F16D25/123

摘要： A lubricating structure for a wet multi-plate clutch is disclosed. The clutch comprises a clutch center member, a clutch guide member positioned radially outward with respect to said clutch center member, a plurality of friction plates disposed between the clutch center member and the clutch guide, the friction plates being alternately coupled to the clutch center member and the clutch guide member respectively. A clutch piston is located adjacent a first end one of the friction plates, for urging the friction plates into frictional engagement with one another, wherein a gap is formed between the piston and the end friction plate before the urging of the engagement of the friction plates. The lubricating structure comprises a first bore formed in the clutch guide member at a position near the first end one of the friction plates for discharging lubricating oil therethrough, and a second bore formed in the clutch center member for supplying lubricating oil to the clutch. The lubricating oil flows from the second bore, through the gap between the clutch piston and the first end friction plate, and through the first bore, before the clutch piston urges the friction plates into engagement, wherein the gap is closed and the flow of lubricating oil through the gap is stopped, when the clutch piston urges the friction plates into engagement.

摘要翻译： 公开了一种用于湿式多板式离合器的润滑结构。 离合器包括离合器中心构件，离合器引导构件，其相对于所述离合器中心构件径向向外定位;多个摩擦板，设置在离合器中心构件和离合器引导件之间，摩擦板交替地联接到离合器中心构件 和离合器引导构件。 离合器活塞位于摩擦板的第一端附近，用于推动摩擦片彼此摩擦接合，其中在摩擦片的接合的推动之前在活塞和末端摩擦片之间形成间隙 。 润滑结构包括形成在离合器引导构件中的靠近第一端的位置处的用于排出润滑油的第一孔，以及形成在离合器中心构件中用于向离合器供给润滑油的第二孔。 润滑油从离心活塞和第一端摩擦片之间的间隙通过第一孔流动，并且在离合器活塞将摩擦片推入啮合之前，其中间隙被封闭并且润滑流动 通过间隙的油停止，当离合器活塞促使摩擦片接合时。

公开(公告)号：US09302410B2

公开(公告)日：2016-04-05

申请号：US13383487

申请日：2010-07-21

申请人： Hideki Shimoi ,  Naoki Uchiyama ,  Daisuke Kawaguchi

发明人： Hideki Shimoi ,  Naoki Uchiyama ,  Daisuke Kawaguchi

IPC分类号： B32B38/04 ,  B28D5/00 ,  B23K26/00 ,  H01L21/78 ,  B23K26/40

CPC分类号： B32B37/06 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/00 ,  B28D5/0011 ,  B32B38/0004 ,  H01L21/78 ,  Y10T29/49002 ,  Y10T29/49787 ,  Y10T156/1052

摘要： A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1a of the object 1A continuously without substantially changing its direction. When generating a stress in the object for separation 10A, the fracture 17 has reached a rear face 10b of the object for separation 10A and thus easily extends toward the object 1A.

摘要翻译： 硅基板12具有（100）面内的主面，由作为起点的熔融处理区域13产生的断裂线17沿硅基板12的切割方向（与 硅衬底12）。 这里，待处理物体1A的后表面1b和待加工物体10A的前面10a通过阳极接合彼此接合，从而断裂17连续地到达物体1A的前表面1a 而不会大幅改变其方向。 当在分离对象物10A中产生应力时，断裂部17已到达分离对象物10A的背面10b，因此容易向物体1A延伸。

公开(公告)号：US08969752B2

公开(公告)日：2015-03-03

申请号：US10548522

申请日：2003-09-11

申请人： Kenshi Fukumitsu ,  Fumitsugu Fukuyo ,  Naoki Uchiyama

发明人： Kenshi Fukumitsu ,  Fumitsugu Fukuyo ,  Naoki Uchiyama

IPC分类号： B23K15/00 ,  B23K26/00 ,  B23K26/04 ,  B23K26/14 ,  B23K26/06 ,  B23K26/02 ,  B23K9/12 ,  G01B15/00 ,  H05B6/00 ,  B23P19/00 ,  C22F3/00 ,  C23C8/00 ,  B28D5/00 ,  B28D1/22 ,  B23K26/40

CPC分类号： B28D5/0011 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D1/221 ,  B28D5/0052 ,  Y10S148/903 ,  Y10T29/49254 ,  Y10T29/53465

摘要： The present invention provides a laser processing method comprising the steps of attaching a protective tape 25 to a front face 3 of a wafer 1a, irradiating a substrate 15 with laser light L while employing a rear face of the wafer 1a as a laser light entrance surface and locating a light-converging point P within the substrate 15 so as to form a molten processed region 13 due to multiphoton absorption, causing the molten processed region 13 to form a cutting start region 8 inside by a predetermined distance from the laser light entrance surface along a line 5 along which the object is intended to be cut in the wafer 1a, attaching an expandable tape 23 to the rear face 21 of the wafer 1a, and expanding the expandable tape 23 so as to separate a plurality of chip parts 24 produced upon cutting the wafer 1a from the cutting start region 8 acting as a start point from each other.

摘要翻译： 本发明提供了一种激光加工方法，包括以下步骤：将保护带25附接到晶片1a的正面3，将基片15照射激光L同时使用晶片1a的背面作为激光入射面 并且将聚光点P定位在基板15内，以便由于多光子吸收而形成熔融处理区域13，使得熔融处理区域13在距激光入射面一定距离处形成切割起始区域8 沿着在该晶片1a上要切割物体的线5，将可膨胀带23附接到晶片1a的后表面21，并且使可扩张带23膨胀以分离生产的多个芯片部分24 在从作为起点的切割起始区域8切割晶片1a时。

公开(公告)号：US08890027B2

公开(公告)日：2014-11-18

申请号：US12282698

申请日：2007-03-06

申请人： Fumitsugu Fukuyo ,  Etsuji Ohmura ,  Kenshi Fukumitsu ,  Masayoshi Kumagai ,  Kazuhiro Atsumi ,  Naoki Uchiyama

发明人： Fumitsugu Fukuyo ,  Etsuji Ohmura ,  Kenshi Fukumitsu ,  Masayoshi Kumagai ,  Kazuhiro Atsumi ,  Naoki Uchiyama

IPC分类号： B23K26/38 ,  B23K26/00 ,  B23K26/06 ,  B23K26/36

CPC分类号： B23K26/53 ,  B23K26/0622 ,  B23K26/0853 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  C03B33/0222 ,  C03B33/037 ,  H01L21/78

摘要： An object to be processed 1 is irradiated with laser light L with a standard pulse waveform, so as to form a molten processed region 131, which has a larger size in the thickness direction of the object 1 and is easy to generate a fracture 24 in the thickness direction of the object 1, within a silicon wafer 111, and with laser light L with a retarded pulse waveform, so as to form a molten processed region 132, which has a smaller size in the thickness direction of the object 1 and is hard to generate the fracture 24 in the thickness direction of the object 1, within a silicon wafer 112.

摘要翻译： 用标准脉冲波形的激光L对被处理物体1进行照射，形成在物体1的厚度方向上具有较大尺寸的熔融处理区域131，容易产生骨折24 物体1的厚度方向，硅晶片111内，以及具有延迟脉冲波形的激光L，形成在物体1的厚度方向上具有较小尺寸的熔融处理区域132，并且为 在硅晶片112内难以在物体1的厚度方向上产生裂缝24。

公开(公告)号：US08828306B2

公开(公告)日：2014-09-09

申请号：US12744727

申请日：2008-11-18

申请人： Naoki Uchiyama

发明人： Naoki Uchiyama

IPC分类号： B29C35/08 ,  H01L21/78 ,  B23K26/08 ,  B23K26/00 ,  B23K26/40

CPC分类号： B23K26/53 ,  B23K26/0823 ,  B23K26/38 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/78

摘要： A working object cutting method capable of cutting a working object precisely is provided. The working object cutting method comprises irradiating a working object 1 with a laser beam while locating a converging point at the working object, so as to form a reformed region in the working object 1 along a reformed-region forming line 15 set at a predetermined distance inside from an outer edge E of the working object 1 along the outer edge, forming a cutting reformed region in the working object 1 along a cutting-scheduled line 5, and cutting the working object 1 along the cutting-scheduled line 5 from a cutting reformed region acting as a start point. Thus forming the working object 1 with the reformed region along the reformed-region forming line 15 set at a predetermined distance inside from the outer edge E of the working object 1 allows the formed reformed region or fissures extending therefrom to inhibit fissures generated in an outer edge portion 25 of the working object 1 from extending to the inside even if a cutting stress is applied to the working object 1 when cutting the working object 1.

摘要翻译： 提供了能够精确地切割加工对象物的工件对象切断方法。 工作对象切割方法包括：将加工对象物1与激光束对准，同时将加工点定位在加工对象上，以沿着设置在预定距离处的重整区域形成线15在加工对象物1中形成重整区域 沿着外缘从工作对象物1的外边缘E向内侧，沿着切断预定线5在加工对象物1上形成切割重整区域，并且沿切割预定线5切割加工对象物1， 改革区域作为起点。 因此，通过设置在与工作对象1的外边缘E相距预定距离的重整区域形成线15的工作对象1，能够使形成的重整区域或从其延伸的裂缝抑制在外部产生的裂缝 即使当切割加工对象1时对加工对象物1施加切削应力时，加工对象物1的边缘部分25也向内延伸。

公开(公告)号：US08603351B2

公开(公告)日：2013-12-10

申请号：US12601090

申请日：2008-05-23

申请人： Takeshi Sakamoto ,  Hideki Shimoi ,  Naoki Uchiyama

发明人： Takeshi Sakamoto ,  Hideki Shimoi ,  Naoki Uchiyama

IPC分类号： B44C1/22

CPC分类号： B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/67132 ,  H01L21/78

摘要： An object to be processed is reliably cut along a line to cut. An object to be processed is irradiated with laser light while locating a converging point at the object, so as to form a modified region in the object along a line to cut. The object formed with the modified region is subjected to an etching process utilizing an etching liquid exhibiting a higher etching rate for the modified region than for an unmodified region, so as to etch the modified region. This can etch the object selectively and rapidly along the line to cut by utilizing a higher etching rate in the modified region.

摘要翻译： 待切割的物体沿切割线可靠切割。 在将会聚点定位在物体的同时用激光照射待处理物体，以沿着切割线在物体中形成改质区域。 用改性区域形成的物体经受蚀刻处理，利用对修饰区域表现出比对于未改性区域更高的蚀刻速率的蚀刻液体，以蚀刻修饰区域。 这可以通过在改质区域中利用较高的蚀刻速率沿切割线选择性地和快速地蚀刻物体。

公开(公告)号：US08481151B2

公开(公告)日：2013-07-09

申请号：US13393798

申请日：2009-09-04

申请人： Naoki Uchiyama ,  Tomomi Kanai ,  Kazumi Harada

发明人： Naoki Uchiyama ,  Tomomi Kanai ,  Kazumi Harada

IPC分类号： C01B6/24 ,  B32B3/26

CPC分类号： B22F1/02 ,  B22F7/002 ,  C01B3/0026 ,  C01B3/0042 ,  C01B3/0078 ,  C22C47/06 ,  C22C49/04 ,  C22C2202/04 ,  Y02E60/327 ,  Y10T428/249953 ,  Y10T428/31678

摘要： A hydrogen storage alloy comprises a hydrogen storage base formed of a mixture of magnesium and an alloy, such as a magnesium-nickel alloy, a magnesium-titanium alloy, a magnesium-niobium alloy, a magnesium-manganese alloy, or a magnesium-cobalt alloy, and a catalytic layer covering a surface of the base. A hydrogen storage alloy unit includes the hydrogen storage base and a porous body including an assembly of nanofibers. The alloy may be vapor-deposited onto the assembly of nanofibers. The nanofibers may be tangled to provide spaces between the fibers for the passage of hydrogen molecules. The nanofibers in one example are also porous. A catalytic layer of platinum may cover a surface of the hydrogen storage base.

摘要翻译： 储氢合金包括由镁和合金的混合物形成的储氢基质，例如镁 - 镍合金，镁 - 钛合金，镁 - 铌合金，镁 - 锰合金或镁 - 钴 合金，以及覆盖基材表面的催化剂层。 储氢合金单元包括储氢基底和包括纳米纤维组件的多孔体。 该合金可以气相沉积到纳米纤维的组件上。 纳米纤维可能被缠结以在纤维之间提供用于氢分子通过的空间。 在一个实例中的纳米纤维也是多孔的。 铂的催化剂层可以覆盖储氢基底的表面。

公开(公告)号：US20120228276A1

公开(公告)日：2012-09-13

申请号：US13428336

申请日：2012-03-23

申请人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

发明人： Fumitsugu Fukuyo ,  Kenshi Fukumitsu ,  Naoki Uchiyama ,  Toshimitsu Wakuda

IPC分类号： B23K26/00

CPC分类号： H01L21/78 ,  B23K20/023 ,  B23K20/16 ,  B23K20/233 ,  B23K20/26 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/046 ,  B23K26/0624 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0853 ,  B23K26/16 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011 ,  B65G2249/04 ,  C03B33/023 ,  C03B33/082 ,  C03B33/102 ,  C03C23/0025 ,  G02F1/1368 ,  H01L21/6836 ,  H01L2221/68327 ,  Y02P40/57 ,  Y10T29/49144 ,  Y10T83/0341

摘要： A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cutting line on the surface of the work to cause multiple photon absorption and with a condensed point located inside of the work, and a modified area is formed inside the work along the predetermined determined cutting line by moving the condensed point along the predetermined cut line, whereby the work is cut with a small force by cracking the work along the predetermined cutting line starting from the modified area and, because the pulse laser beam is hardly absorbed onto the surface.

摘要翻译： 一种激光束加工方法和激光束加工装置，其能够切割工件而不会产生工件表面上的预定切割线的定影和裂纹，其中脉冲激光束照射在工件表面上的预定切割线上 工作的表面，引起多光子吸收并且具有位于工件内部的凝结点，并且沿着预定的切割线沿着预定的切割线沿着预定的切割线移动凝结点，在工件内部形成改质区域，由此工件 通过从修改区域开始沿着预定切割线开裂工件，并且因为脉冲激光束几乎不被吸收到表面上，所以以小的力切割。

公开(公告)号：US20120171461A1

公开(公告)日：2012-07-05

申请号：US13393792

申请日：2009-09-04

申请人： Naoki Uchiyama ,  Tomomi Kanai ,  Kazumi Harada

发明人： Naoki Uchiyama ,  Tomomi Kanai ,  Kazumi Harada

IPC分类号： B32B3/26 ,  B01J21/10 ,  B82Y99/00

CPC分类号： B22F1/02 ,  B22F7/002 ,  C01B3/0031 ,  C01B3/0042 ,  C01B3/0078 ,  C22C23/00 ,  C22C47/062 ,  C22C49/04 ,  C22C2202/04 ,  Y02E60/327 ,  Y10T428/249953

摘要： A hydrogen storage alloy unit comprises a porous body 7 having a large number of holes (spaces) 9 allowing hydrogen atoms to pass through, and a hydrogen storage alloy covering a surface of the porous body 7, inclusive of surfaces of the holes thereof. The hydrogen storage alloy includes a hydrogen storage base formed of a hydrogen storage material, and a catalytic layer covering a surface of the hydrogen storage base. The porous body 7 is formed of an assembly of hydrogen storage fibers 8 formed by vapor-depositing the hydrogen storage alloy onto nanofibers.

摘要翻译： 储氢合金单元包括具有允许氢原子通过的大量孔（空间）9的多孔体7和覆盖多孔体7的表面的储氢合金，包括其孔的表面。 储氢合金包括由储氢材料形成的储氢基底和覆盖储氢基体的表面的催化剂层。 多孔体7由通过将储氢合金气相沉积在纳米纤维上形成的储氢纤维8的组合而形成。

公开(公告)号：US20120164432A1

公开(公告)日：2012-06-28

申请号：US13393798

申请日：2009-09-04

申请人： Naoki Uchiyama ,  Tomomi Kanai ,  Kazumi Harada

发明人： Naoki Uchiyama ,  Tomomi Kanai ,  Kazumi Harada

IPC分类号： B32B3/26 ,  B32B15/04

CPC分类号： B22F1/02 ,  B22F7/002 ,  C01B3/0026 ,  C01B3/0042 ,  C01B3/0078 ,  C22C47/06 ,  C22C49/04 ,  C22C2202/04 ,  Y02E60/327 ,  Y10T428/249953 ,  Y10T428/31678

摘要： A hydrogen storage alloy comprises a hydrogen storage base 2 formed of a mixture of Mg and an alloy (Mg2Ni, for example), and a catalytic layer 3 covering a surface of the hydrogen storage base 2. The hydrogen storage alloy with this structure exhibits both a high ability to store hydrogen and a high ability to cause hydrogen to diffuse in it in the solid state, provided by Mg and Mg2Ni, respectively. Hydrogen absorbed in Mg in one region is passed on to Mg (or Mg2Ni) in another region by virtue of Mg2Ni. Since this movement of hydrogen does not require heat nor pressure, hydrogen can be absorbed at room temperature and atmospheric pressure.

摘要翻译： 储氢合金包括由Mg和合金（例如Mg2Ni）的混合物形成的储氢基底2和覆盖储氢基底2的表面的催化剂层3.具有这种结构的储氢合金表现出两者 分别由Mg和Mg2Ni提供的氢的存储能力高，并且能够以固态形式在其中扩散氢的高能力。 通过Mg2Ni，将一个区域中Mg中吸收的氢气传递到另一区域的Mg（或Mg2Ni）。 由于氢气的运动不需要热量或压力，所以氢气可以在室温和大气压下被吸收。