公开(公告)号：US5450037A

公开(公告)日：1995-09-12

申请号：US268012

申请日：1994-06-29

申请人： Masahito Kanaya ,  Takeshi Suzuki ,  Masakazu Ueno ,  Takahisa Makino ,  Yukinao Sakuma

发明人： Masahito Kanaya ,  Takeshi Suzuki ,  Masakazu Ueno ,  Takahisa Makino ,  Yukinao Sakuma

IPC分类号： G05F1/56 ,  H03F1/02

CPC分类号： H03F1/0238 ,  G05F1/56

摘要： A gradient detecting unit detects the gradient in the output of a driven circuit. An offset voltage generating unit generates an offset voltage in response to an output of a driven circuit as well as the gradient detected by the gradient detecting unit. The gradient in the output of the driven circuit is increased as the change thereof is more abrupt and decreased as the change thereof is more gentle. For example, if the detected gradient is added to the normal offset voltage to form an offset voltage, the offset voltage can follow the changes in the output of the driven circuit to supply a proper supply voltage to the driven circuit.

摘要翻译： 梯度检测单元检测驱动电路的输出中的梯度。 偏移电压产生单元响应于驱动电路的输出以及由梯度检测单元检测的梯度产生偏移电压。 驱动电路的输出的梯度随着其变化更加突然而增加，随着其变化更柔和而降低。 例如，如果检测到的梯度被添加到正常偏移电压以形成偏移电压，则偏移电压可以跟随驱动电路的输出的变化，以向驱动电路提供适当的电源电压。

公开(公告)号：US09362205B2

公开(公告)日：2016-06-07

申请号：US13878718

申请日：2011-09-15

申请人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

发明人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

IPC分类号： H01L23/482 ,  H01L23/049 ,  H01L23/373 ,  H01L23/498 ,  H01L25/07 ,  H02M7/537 ,  H01L31/02 ,  H01L23/24 ,  H01L23/00 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L23/482 ,  H01L23/049 ,  H01L23/24 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49833 ,  H01L23/49844 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L25/072 ,  H01L31/02021 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1203 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H02M7/537 ,  Y02E10/50 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A compact circuit device wherein a semiconductor element that performs high current switching is embedded is provided. A lead (30) and lead (28) though which high current passes are disposed superimposed on the upper surface of a circuit board (12). Also, a plurality of ceramic substrates (22A-22F) are affixed to the circuit board (12), and transistors, diodes, or resistors are mounted to the upper surface of the ceramic substrates. Furthermore, the circuit elements such as the transistors or diodes are connected to the lead (28) or the other lead (30) via fine metal wires.

摘要翻译： 提供一种嵌入了高电流切换的半导体元件的紧凑型电路装置。 高电流通过的引线（30）和引线（28）重叠设置在电路板（12）的上表面上。 此外，多个陶瓷基板（22A-22F）固定到电路板（12）上，并且晶体管，二极管或电阻器安装到陶瓷基板的上表面。 此外，诸如晶体管或二极管的电路元件通过细金属线连接到引线（28）或另一引线（30）。

公开(公告)号：US20130286616A1

公开(公告)日：2013-10-31

申请号：US13878724

申请日：2011-09-15

申请人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

发明人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

IPC分类号： H05K1/18

CPC分类号： H05K1/18 ,  H01L23/049 ,  H01L23/24 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49844 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L25/072 ,  H01L31/02021 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  Y02E10/50 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A circuit device having superior voltage resistance is provided. A structure is achieved that omits the resin layer that is normally provided to the top surface of a circuit board. Specifically, a ceramic substrate (22) is disposed on the top surface of a circuit board (12) comprising a metal, and a transistor (34) such as an IGBT is mounted to the top surface of the ceramic substrate (22). As a result, the transistor (34) and the circuit board (12) are insulated from each other by the ceramic substrate (22). The ceramic substrate (22), which comprises an inorganic material, has an extremely high voltage resistance compared to the conventionally used insulating layer comprising resin, and so even if a high voltage on the order of 1000V is applied to the transistor (34), short circuiting between the transistor (34) and the circuit board (12) is prevented.

摘要翻译： 提供了具有优异的耐电压性的电路装置。 实现省略通常设置到电路板的顶表面的树脂层的结构。 具体而言，在包含金属的电路基板（12）的顶面设置有陶瓷基板（22），在陶瓷基板（22）的上表面安装有诸如IGBT的晶体管（34）。 结果，晶体管（34）和电路板（12）通过陶瓷基板（22）彼此绝缘。 包括无机材料的陶瓷基板（22）与常规使用的包含树脂的绝缘层相比具有极高的耐电压性，因此即使将大约1000V的高电压施加到晶体管（34）， 防止晶体管（34）与电路板（12）之间的短路。

公开(公告)号：US20130286618A1

公开(公告)日：2013-10-31

申请号：US13878721

申请日：2011-09-15

申请人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

发明人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

IPC分类号： H05K1/18

CPC分类号： H05K1/18 ,  H01L23/049 ,  H01L23/24 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49833 ,  H01L23/49844 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L25/072 ,  H01L31/02021 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48195 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1203 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30107 ,  Y02E10/50 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A compact circuit device wherein a semiconductor element that performs high current switching is embedded is provided. The hybrid integrated circuit device (10) is provided with: a circuit board (12); a plurality of ceramic substrates (22A-22G) disposed on the top surface of the circuit board (12); circuit elements such as transistors mounted on the top surface of the ceramic substrates (22A-22G); and a lead (29) or the like that is connected to the circuit elements and is exposed to the outside. Furthermore, in the present embodiment, leads (28, 30, 31A-31C) are disposed superimposed in the vicinity of the center of the circuit board (12), and a circuit element such as an IGBT is disposed and electrically connected approaching the region at which the leads are superimposed. The alternating current transformed by the IGBT is output externally via the leads (31A, etc.).

摘要翻译： 提供一种嵌入了高电流切换的半导体元件的紧凑型电路装置。 混合集成电路装置（10）具有：电路板（12）; 设置在所述电路板（12）的顶表面上的多个陶瓷基板（22A-22G）; 电路元件，例如安装在陶瓷基板（22A-22G）的顶表面上的晶体管; 以及连接到电路元件并暴露于外部的引线（29）等。 此外，在本实施方式中，引线（28,30,31A-31C）重叠配置在电路基板（12）的中心附近，并且电路元件（例如IGBT）被布置并电连接接近该区域 引线叠加在其上。 由IGBT变换的交流电经由引线（31A等）向外部输出。

公开(公告)号：US09363894B2

公开(公告)日：2016-06-07

申请号：US13878721

申请日：2011-09-15

申请人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

发明人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

IPC分类号： H05K1/18 ,  H01L23/049 ,  H01L23/29 ,  H01L23/373 ,  H01L23/498 ,  H01L25/07 ,  H01L31/02 ,  H01L23/24 ,  H01L23/31 ,  H01L23/00

CPC分类号： H05K1/18 ,  H01L23/049 ,  H01L23/24 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49833 ,  H01L23/49844 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L25/072 ,  H01L31/02021 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48195 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1203 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/30107 ,  Y02E10/50 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A compact circuit device wherein a semiconductor element that performs high current switching is embedded is provided. The hybrid integrated circuit device (10) is provided with: a circuit board (12); a plurality of ceramic substrates (22A-22G) disposed on the top surface of the circuit board (12); circuit elements such as transistors mounted on the top surface of the ceramic substrates (22A-22G); and a lead (29) or the like that is connected to the circuit elements and is exposed to the outside. Furthermore, in the present embodiment, leads (28, 30, 31A-31C) are disposed superimposed in the vicinity of the center of the circuit board (12), and a circuit element such as an IGBT is disposed and electrically connected approaching the region at which the leads are superimposed. The alternating current transformed by the IGBT is output externally via the leads (31A, etc.).

摘要翻译： 提供一种嵌入了高电流切换的半导体元件的紧凑型电路装置。 混合集成电路装置（10）具有：电路板（12）; 设置在所述电路板（12）的顶表面上的多个陶瓷基板（22A-22G）; 电路元件，例如安装在陶瓷基板（22A-22G）的顶表面上的晶体管; 以及连接到电路元件并暴露于外部的引线（29）等。 此外，在本实施方式中，引线（28,30,31A-31C）重叠配置在电路基板（12）的中心附近，并且电路元件（例如IGBT）被布置并电连接接近该区域 引线叠加在其上。 由IGBT变换的交流电经由引线（31A等）向外部输出。

公开(公告)号：US20130286617A1

公开(公告)日：2013-10-31

申请号：US13878718

申请日：2011-09-15

申请人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

发明人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

IPC分类号： H01L23/482 ,  H02M7/537

CPC分类号： H01L23/482 ,  H01L23/049 ,  H01L23/24 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49833 ,  H01L23/49844 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L25/072 ,  H01L31/02021 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1203 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H02M7/537 ,  Y02E10/50 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A compact circuit device wherein a semiconductor element that performs high current switching is embedded is provided. A lead (30) and lead (28) though which high current passes are disposed superimposed on the upper surface of a circuit board (12). Also, a plurality of ceramic substrates (22A-22F) are affixed to the circuit board (12), and transistors, diodes, or resistors are mounted to the upper surface of the ceramic substrates. Furthermore, the circuit elements such as the transistors or diodes are connected to the lead (28) or the other lead (30) via fine metal wires.

摘要翻译： 提供一种嵌入了高电流切换的半导体元件的紧凑型电路装置。 高电流通过的引线（30）和引线（28）重叠设置在电路板（12）的上表面上。 此外，多个陶瓷基板（22A-22F）固定到电路板（12）上，并且晶体管，二极管或电阻器安装到陶瓷基板的上表面。 此外，诸如晶体管或二极管的电路元件通过细金属线连接到引线（28）或另一引线（30）。

公开(公告)号：US09271397B2

公开(公告)日：2016-02-23

申请号：US13878724

申请日：2011-09-15

申请人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

发明人： Takashi Shibasaki ,  Hidefumi Saito ,  Takahisa Makino ,  Masanori Shimizu ,  Daisuke Sasaki

IPC分类号： H01K1/18 ,  H05K1/18 ,  H01L23/498 ,  H01L25/07 ,  H01L23/049 ,  H01L31/02 ,  H01L23/24 ,  H01L23/31 ,  H01L23/373 ,  H01L23/00 ,  H01L23/29

CPC分类号： H05K1/18 ,  H01L23/049 ,  H01L23/24 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/49844 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L25/072 ,  H01L31/02021 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48699 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19107 ,  Y02E10/50 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A circuit device having superior voltage resistance is provided. A structure is achieved that omits the resin layer that is normally provided to the top surface of a circuit board. Specifically, a ceramic substrate (22) is disposed on the top surface of a circuit board (12) comprising a metal, and a transistor (34) such as an IGBT is mounted to the top surface of the ceramic substrate (22). As a result, the transistor (34) and the circuit board (12) are insulated from each other by the ceramic substrate (22). The ceramic substrate (22), which comprises an inorganic material, has an extremely high voltage resistance compared to the conventionally used insulating layer comprising resin, and so even if a high voltage on the order of 1000V is applied to the transistor (34), short circuiting between the transistor (34) and the circuit board (12) is prevented.

摘要翻译： 提供了具有优异的耐电压性的电路装置。 实现省略通常设置到电路板的顶表面的树脂层的结构。 具体而言，在包含金属的电路基板（12）的顶面设置有陶瓷基板（22），在陶瓷基板（22）的上表面安装有诸如IGBT的晶体管（34）。 结果，晶体管（34）和电路板（12）通过陶瓷基板（22）彼此绝缘。 包括无机材料的陶瓷基板（22）与常规使用的包含树脂的绝缘层相比具有极高的耐电压性，因此即使将大约1000V的高电压施加到晶体管（34）， 防止晶体管（34）与电路板（12）之间的短路。