公开(公告)号：US20060194417A1

公开(公告)日：2006-08-31

申请号：US10530189

申请日：2003-10-10

申请人： Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki ,  Masaki Mizutani

发明人： Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki ,  Masaki Mizutani

IPC分类号： H01L31/0376 ,  H01L21/20

CPC分类号： C30B29/06 ,  C30B11/00 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： A polycrystalline silicon substrate for a solar cell formed by growing a high purity polycrystalline silicon layer on a surface of a base obtained by slicing a polycrystalline silicon ingot obtained by melting metallurgical grade silicon and performing one-direction solidification, wherein one-direction solidification is performed on a melt prepared by adding B to molten metallurgical grade silicon at an amount of 2×1018 cm−3 to 5×1019 cm−3 based on the concentration in the melt to produce the polycrystalline silicon ingot. With this structure, it is possible to easily obtain a polycrystalline silicon substrate having resistivity and the type of conductivity suitable for manufacture of a solar cell.

摘要翻译： 一种用于太阳能电池的多晶硅衬底，其通过在通过熔化冶金级硅获得的多晶硅锭切片并进行单向凝固而获得的基底表面上生长高纯度多晶硅层而形成，其中执行单向凝固 在通过以2×10 18 cm -3至5×10 19 cm -3的量向熔融冶金级硅中加入B制备的熔体上， 3，根据熔体中的浓度制造多晶硅锭。 利用这种结构，可以容易地获得具有电阻率的多晶硅基板和适合制造太阳能电池的导电类型。

公开(公告)号：US07022181B2

公开(公告)日：2006-04-04

申请号：US10014418

申请日：2001-12-14

申请人： Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Masaki Mizutani

发明人： Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Masaki Mizutani

IPC分类号： C30B19/00

CPC分类号： C30B19/062 ,  C30B19/00 ,  C30B29/06 ,  Y10S117/911

摘要： In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.

公开(公告)号：US06824609B2

公开(公告)日：2004-11-30

申请号：US10229123

申请日：2002-08-28

申请人： Tetsuro Saito ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Masaki Mizutani

发明人： Tetsuro Saito ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Masaki Mizutani

IPC分类号： C30B1900

CPC分类号： C30B19/064 ,  C30B19/02 ,  C30B19/06 ,  C30B29/06 ,  Y10S117/90 ,  Y10T117/1016 ,  Y10T117/1024

摘要： A liquid phase growth method is provided which comprises dipping a seed substrate in a solution in a vessel having a crystal raw material melted therein and growing a crystal on the substrate, wherein a fin is provided on a bottom of the vessel, for regulating a flow of the solution from a central portion outside in a radial direction in the vessel; a flow-regulating plate is provided in the vicinity of an inner sidewall of the vessel, for regulating a flow of the solution from the bottom upwardly; and the vessel is rotated while regulating a flow of the solution by an action of the fin and the flow-regulating plate to bring the solution into contact with the seed substrate. Thus, there is provided a liquid phase growth method and apparatus capable of providing a high growth rate and showing little difference in the growth rate among the substrates or within the same substrate even when a number of substrates are charged in one batch.

摘要翻译： 提供一种液相生长方法，其包括将种子基底浸入溶液中，其中晶体原料熔化在其中并在基底上生长晶体，其中在容器的底部设置有用于调节流动的翅片 从容器中沿径向外侧的中心部分的溶液; 流量调节板设置在容器的内侧壁附近，用于调节溶液从底部向上的流动; 并且通过翅片和流动调节板的作用调节溶液的流动以使溶液与种子基底接触来旋转容器。 因此，提供了一种液相生长方法和装置，其能够提供高生长速率，并且即使在一批中填充多个基板时，基板之间或同一基板内的生长速度几乎没有差异。

公开(公告)号：US07407547B2

公开(公告)日：2008-08-05

申请号：US11270562

申请日：2005-11-10

申请人： Masaki Mizutani ,  Katsumi Nakagawa ,  Takehito Yoshino ,  Shoji Nishida

发明人： Masaki Mizutani ,  Katsumi Nakagawa ,  Takehito Yoshino ,  Shoji Nishida

IPC分类号： C30B11/02

CPC分类号： C30B19/068 ,  C30B19/02 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1024

摘要： A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a taw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.

摘要翻译： 用于在基板上生长晶体的液相生长装置包括含有包含用于形成晶体的原料的溶液的坩埚和用于垂直保持基板的基板保持器。 衬底保持器包括连接器，接收部件和推动部件。 接收部件和推动部件彼此相对并且通过连接器连接。 推动部件保持基板的上部，而接收部件保持基板的下部。 将含有垂直保持的基板的基板保持器浸入溶液中。 接收部件在包含在坩埚中的溶液中浮力上升，使得基板现在被牢固地保持并且防止由于热膨胀而开裂。

公开(公告)号：US07175706B2

公开(公告)日：2007-02-13

申请号：US10505979

申请日：2003-02-21

申请人： Masaki Mizutani ,  Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

发明人： Masaki Mizutani ,  Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

IPC分类号： C30B11/14

CPC分类号： C30B11/00 ,  C30B29/06 ,  C30B33/00 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.

摘要翻译： 提供了具有作为太阳能电池基板的优异特性的多晶硅基板的制造方法。 切割通过定向凝固10制成的多晶硅锭，使得多晶硅基板13的主表面14的法线基本上垂直于通过定向凝固10制成的多晶硅锭的晶粒11的纵向方向。

公开(公告)号：US06872248B2

公开(公告)日：2005-03-29

申请号：US10400636

申请日：2003-03-28

申请人： Masaki Mizutani ,  Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida

发明人： Masaki Mizutani ,  Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida

IPC分类号： C30B19/06 ,  C30B29/06 ,  H01L21/208 ,  C30B19/04 ,  C30B19/10

CPC分类号： C30B19/068 ,  C30B19/062 ,  Y10T117/10 ,  Y10T117/1024

摘要： A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.

摘要翻译： 一种液相生长方法，包括将基底衬底浸入容纳在坩埚中的待生长的待反应物种溶液的溶液中并在所述基底上生长晶体膜，其特征在于，封盖构件保持在 所述溶液在将所述基材浸入所述溶液中之前，将所述基材浸入所述溶液中，并且所述封盖构件在所述溶液中沉降。 适用于实施所述液相生长过程的液相生长装置。

公开(公告)号：US06258666B1

公开(公告)日：2001-07-10

申请号：US09333019

申请日：1999-06-15

申请人： Masaki Mizutani ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Noritaka Ukiyo ,  Yukiko Iwasaki

发明人： Masaki Mizutani ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Noritaka Ukiyo ,  Yukiko Iwasaki

IPC分类号： H01L21336

CPC分类号： H01L21/76251 ,  C23C16/01 ,  C30B29/60 ,  C30B33/00 ,  H01L31/1892 ,  Y02E10/50 ,  Y10S156/93 ,  Y10S156/942 ,  Y10T156/1179 ,  Y10T156/1978

摘要： Provided is a method of producing a semiconductor thin film wherein while a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. These provide the method of peeling the semiconductor thin film away from the substrate without damage and the method of holding the substrate without contamination.

摘要翻译： 提供一种制造半导体薄膜的方法，其中当形成在基板上的半导体薄膜被支撑在具有曲面的支撑构件的曲面上时，支撑构件旋转，从而将半导体薄膜剥离离开 基质。 还提供了一种制造半导体薄膜的方法，该半导体薄膜具有将形成在基板上的半导体薄膜剥离离开基板的步骤，其中在将基板固定在基板支撑部件上而不用粘合剂之后进行剥离步骤。 这些提供了将半导体薄膜远离基板剥离而不损坏的方法以及不污染保持基板的方法。

公开(公告)号：US06802926B2

公开(公告)日：2004-10-12

申请号：US09813137

申请日：2001-03-21

申请人： Masaki Mizutani ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Noritaka Ukiyo ,  Yukiko Iwasaki

发明人： Masaki Mizutani ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Noritaka Ukiyo ,  Yukiko Iwasaki

IPC分类号： B32B3100

CPC分类号： H01L21/76251 ,  C23C16/01 ,  C30B29/60 ,  C30B33/00 ,  H01L31/1892 ,  Y02E10/50 ,  Y10S156/93 ,  Y10S156/942 ,  Y10T156/1179 ,  Y10T156/1978

摘要： A method of producing a semiconductor thin film is provided. While a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. According to these methods, it is possible to peel the semiconductor thin film away from the substrate without damage and to hold the substrate without contamination.

摘要翻译： 提供一种制造半导体薄膜的方法。 虽然形成在基板上的半导体薄膜被支撑在具有曲面的支撑构件的曲面上，但是支撑构件被旋转，从而使半导体薄膜远离基板。 还提供了一种制造半导体薄膜的方法，该半导体薄膜具有将形成在基板上的半导体薄膜剥离离开基板的步骤，其中在将基板固定在基板支撑部件上而不用粘合剂之后进行剥离步骤。 根据这些方法，可以将半导体薄膜从衬底上剥离而不会损坏并且保持衬底而没有污染。

公开(公告)号：US06802900B2

公开(公告)日：2004-10-12

申请号：US10022545

申请日：2001-12-20

申请人： Masaaki Iwane ,  Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaki Mizutani

发明人： Masaaki Iwane ,  Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaki Mizutani

IPC分类号： C30B1900

CPC分类号： C30B19/02 ,  C30B19/04 ,  C30B19/06 ,  C30B19/08

摘要： Provided are a liquid phase growth method including a step of immersing a substrate in a crucible storing a solvent having a growth material dissolved therein; and a step of cooling the solvent from an interior thereof, and a liquid phase growth apparatus for use in the method, by which a temperature difference of a solution is decreased and by which a deposited film is formed in a uniform thickness.

摘要翻译： 提供一种液相生长方法，包括将基板浸渍在储存溶解有生长材料的溶剂的坩埚中的步骤; 以及从其内部冷却溶剂的步骤，以及用于该方法的液相生长装置，通过该液相生长装置降低溶液的温度差并形成均匀的厚度的沉积膜。

公开(公告)号：US06682990B1

公开(公告)日：2004-01-27

申请号：US09656014

申请日：2000-09-07

申请人： Masaaki Iwane ,  Katsumi Nakagawa ,  Makoto Iwakami ,  Shoji Nishida ,  Noritaka Ukiyo ,  Yukiko Iwasaki ,  Masaki Mizutani

发明人： Masaaki Iwane ,  Katsumi Nakagawa ,  Makoto Iwakami ,  Shoji Nishida ,  Noritaka Ukiyo ,  Yukiko Iwasaki ,  Masaki Mizutani

IPC分类号： H01L2130

CPC分类号： H01L31/1804 ,  H01L21/67207 ,  H01L21/6835 ,  H01L21/76259 ,  H01L31/0504 ,  H01L31/1892 ,  H01L2221/68368 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/96 ,  Y10S438/977

摘要： The separation method of a semiconductor layer according to the present invention comprises separating a semiconductor layer and a semiconductor substrate at a separation layer formed therebetween, wherein a face of the semiconductor layer at the side opposite to the separation layer and/or a face of the semiconductor substrate at the side opposite to the separation layer are held by utilizing an ice layer, whereby it is unnecessary to use an adhesive as holding means and at the same time it is possible to easily and uniformly separate them.

摘要翻译： 根据本发明的半导体层的分离方法包括在形成在其间的分离层处分离半导体层和半导体衬底，其中半导体层在与分离层相对的一侧的表面和/或 通过利用冰层保持在与分离层相对的一侧的半导体衬底，由此不需要使用粘合剂作为保持装置，并且同时可以容易且均匀地分离它们。