公开(公告)号：US20100319545A1

公开(公告)日：2010-12-23

申请号：US12818758

申请日：2010-06-18

申请人： MASAKI NARUSHIMA ,  Koichi Mori ,  Isao Yamada ,  Noriaki Toyoda

发明人： MASAKI NARUSHIMA ,  Koichi Mori ,  Isao Yamada ,  Noriaki Toyoda

IPC分类号： B03C3/68 ,  B03C3/38

CPC分类号： H01J49/421 ,  H01J27/026 ,  H01J37/147 ,  H01J2237/3142 ,  H01J2237/3151 ,  H01J2237/31701

摘要： A charged particle separation apparatus that separates ionized gas clusters is disclosed. The charged particle separation apparatus includes three or more electric field applying parts arranged in an incident direction of an ionized gas cluster, wherein each of the electric field applying parts includes a pair of electrodes; an electric power source configured to supply alternating-current electric voltages to the three or more electric field applying parts in such a manner that an alternating-current electric voltage applied across one pair of the electrodes of one of the three or more electric field applying parts is different in phase from an alternating-current voltage applied across another pair of the electrodes of an adjacent one of the three or more electric field applying parts; and a plate including an opening in an extension of the incident direction.

摘要翻译： 公开了一种分离离子化气体簇的带电粒子分离装置。 带电粒子分离装置包括沿电离气体簇的入射方向配置的三个以上的电场施加部，其中，各电场施加部包括一对电极; 电源，被配置为向三个或更多个电场施加部提供交流电压，使得施加在三个或更多个电场施加部中的一个的一对电极上的交流电压 与施加在三个或更多个电场施加部件中相邻一个的另一对电极上的交流电压的相位不同; 以及包括在入射方向的延伸部中的开口的板。

公开(公告)号：US08168946B2

公开(公告)日：2012-05-01

申请号：US12816512

申请日：2010-06-16

申请人： Masaki Narushima ,  Koichi Mori ,  Isao Yamada ,  Noriaki Toyoda

发明人： Masaki Narushima ,  Koichi Mori ,  Isao Yamada ,  Noriaki Toyoda

IPC分类号： H01J49/28 ,  H01J3/26

CPC分类号： H01J49/282

摘要： A charged particle separation apparatus that separates ionized gas clusters is disclosed. The charged particle separation apparatus includes an electric field applying part including two electrodes across which electric voltage is applied in order to generate electric field between the two electrodes thereby deflecting a trajectory of the ionized gas cluster, the electrodes including one of an opening and a void; and a plate opening that allows the ionized gas cluster whose trajectory is deflected by the electric field applying part to go therethrough.

摘要翻译： 公开了一种分离离子化气体簇的带电粒子分离装置。 带电粒子分离装置包括电场施加部分，其包括施加电压的两个电极，以便在两个电极之间产生电场，从而偏转电离气体簇的轨迹，电极包括开口和空隙之一 ; 以及允许由电场施加部件偏转轨迹的离子化气体团簇通过的板状开口。

公开(公告)号：US20100320380A1

公开(公告)日：2010-12-23

申请号：US12816512

申请日：2010-06-16

申请人： Masaki Narushima ,  Koichi Mori ,  Isao Yamada ,  Noriaki Toyoda

发明人： Masaki Narushima ,  Koichi Mori ,  Isao Yamada ,  Noriaki Toyoda

IPC分类号： B01D59/44

CPC分类号： H01J49/282

摘要： A charged particle separation apparatus that separates ionized gas clusters is disclosed. The charged particle separation apparatus includes an electric field applying part including two electrodes across which electric voltage is applied in order to generate electric field between the two electrodes thereby deflecting a trajectory of the ionized gas cluster, the electrodes including one of an opening and a void; and a plate opening that allows the ionized gas cluster whose trajectory is deflected by the electric field applying part to go therethrough.

摘要翻译： 公开了一种分离离子化气体簇的带电粒子分离装置。 带电粒子分离装置包括电场施加部分，其包括施加电压的两个电极，以便在两个电极之间产生电场，从而偏转电离气体簇的轨迹，电极包括开口和空隙之一 ; 以及允许由电场施加部件偏转轨迹的离子化气体团簇通过的板状开口。

公开(公告)号：US07420189B2

公开(公告)日：2008-09-02

申请号：US11397140

申请日：2006-04-04

申请人： Tomonori Imamura ,  Isao Yamada ,  Noriaki Toyoda

发明人： Tomonori Imamura ,  Isao Yamada ,  Noriaki Toyoda

IPC分类号： G21K5/10

CPC分类号： H01J37/302 ,  H01J37/20 ,  H01J37/3053 ,  H01J2237/0812 ,  H01J2237/20207

摘要： An ultra precise polishing method includes controlling an irradiation time of a surface position of an object to be processed irradiated by a gas cluster ion beam. A profile is created and polished on the surface of the object to be processed by controlling irradiation of the gas cluster ion beam. An ultra precise polishing apparatus includes an irradiating device for irradiating a surface of an object to be processed by a gas cluster ion beam. A positioning device is provided for changing a surface position of the object to be processed, which is irradiated by the gas cluster ion beam by moving the irradiating device and the object to be processed relative to each other. A control device is provided for controlling the irradiation time of a surface position of the object to be processed irradiated by the gas cluster ion beam.

摘要翻译： 超精密抛光方法包括控制由气体簇离子束照射的待处理物体的表面位置的照射时间。 通过控制气体簇离子束的照射，在要处理的物体的表面上产生并抛光轮廓。 超精密抛光装置包括用于通过气体簇离子束照射被处理物体的表面的照射装置。 提供了一种定位装置，用于通过相对于彼此移动照射装置和待处理对象来改变由气体簇离子束照射的被处理物体的表面位置。 提供控制装置，用于控制由气体簇离子束照射的待处理物体的表面位置的照射时间。

公开(公告)号：US20050042800A1

公开(公告)日：2005-02-24

申请号：US10502537

申请日：2003-01-10

申请人： Isao Yamada ,  Jiro Matsuo ,  Noriaki Toyoda ,  Kazutoshi Murata ,  Naomasa Miyatake

发明人： Isao Yamada ,  Jiro Matsuo ,  Noriaki Toyoda ,  Kazutoshi Murata ,  Naomasa Miyatake

IPC分类号： C23C16/01 ,  C23C16/32 ,  C30B25/02 ,  C30B29/36 ,  C30B33/00 ,  C30B33/12 ,  H01L21/02 ,  H01L21/205 ,  H01L21/00 ,  H01L21/30 ,  H01L21/46

CPC分类号： C30B29/36 ,  C23C16/01 ,  C23C16/325 ,  C30B25/02 ,  C30B33/00 ,  Y10S438/931

摘要： The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*1011 atoms/cm2 or less to produce the SiC monitor wafer.

摘要翻译： 本发明的目的是获得可以使表面变平的SiC监测晶片，直到可以进行粒子检测。 通过CVD（化学气相沉积）法将晶体系统3C的SiC沉积在衬底上，并且将SiC从衬底上分离。 在通过单独使用机械抛光或与CMP（Chemo Mechanical Polishing）组合使SiC表面平坦化之后，将GCIB（气体簇离子束）照射到表面，直到表面粗糙度变为Ra = 0.5nm以下，杂质浓度 晶片表面变为1×1011原子/ cm 2或更小以产生SiC监测晶片。

公开(公告)号：US07022545B2

公开(公告)日：2006-04-04

申请号：US10502537

申请日：2003-01-10

申请人： Isao Yamada ,  Jiro Matsuo ,  Noriaki Toyoda ,  Kazutoshi Murata ,  Naomasa Miyatake

发明人： Isao Yamada ,  Jiro Matsuo ,  Noriaki Toyoda ,  Kazutoshi Murata ,  Naomasa Miyatake

IPC分类号： H01L21/02 ,  H01L21/205 ,  B24C1/00 ,  C30B29/36

CPC分类号： C30B29/36 ,  C23C16/01 ,  C23C16/325 ,  C30B25/02 ,  C30B33/00 ,  Y10S438/931

摘要： The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*1011 atoms/cm2 or less to produce the SiC monitor wafer.

摘要翻译： 本发明的目的是获得可以使表面变平的SiC监测晶片，直到可以进行粒子检测。 通过CVD（化学气相沉积）法将晶体系统3C的SiC沉积在衬底上，并且将SiC从衬底上分离。 在通过单独使用机械抛光或与CMP（Chemo Mechanical Polishing）组合使SiC表面平坦化之后，将GCIB（气体簇离子束）照射到表面，直到表面粗糙度变为Ra = 0.5nm以下，杂质浓度 晶片表面变为1×10 11原子/ cm 2或更小，以产生SiC监测晶片。

公开(公告)号：US6013332A

公开(公告)日：2000-01-11

申请号：US762853

申请日：1996-12-06

申请人： Kenichi Goto ,  Masataka Kase ,  Jiro Matsuo ,  Isao Yamada ,  Daisuke Takeuchi ,  Noriaki Toyoda ,  Norihiro Shimada

发明人： Kenichi Goto ,  Masataka Kase ,  Jiro Matsuo ,  Isao Yamada ,  Daisuke Takeuchi ,  Noriaki Toyoda ,  Norihiro Shimada

IPC分类号： C23C14/48 ,  H01L21/265 ,  C23C14/14

CPC分类号： H01L21/2658 ,  C23C14/48 ,  H01L21/26513 ,  H01J2237/31701 ,  Y10S438/918

摘要： A method of manufacturing a semiconductor device comprising the steps of: ionizing decaborane; and implanting ionized decaborane into a silicon wafer. Solid decaborane can be vaporized in a reduced pressure atmosphere or by heating. A single decaborane molecule can provide 10 boron atoms while the acceleration energy per each boron atom can be reduced to about 1/10 of the acceleration energy for a decaborane molecule.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：电离十硼烷; 并将离子化的十硼烷注入到硅晶片中。 固体十硼烷可在减压气氛或加热下汽化。 单个十硼烷分子可以提供10个硼原子，而每个硼原子的加速能量可以降低到十五硼烷分子的加速能的约+ E，fra 1/10 + EE。

公开(公告)号：US20070227879A1

公开(公告)日：2007-10-04

申请号：US11397140

申请日：2006-04-04

申请人： Tomonori Imamura ,  Isao Yamada ,  Noriaki Toyoda

发明人： Tomonori Imamura ,  Isao Yamada ,  Noriaki Toyoda

IPC分类号： C23C14/00

CPC分类号： H01J37/302 ,  H01J37/20 ,  H01J37/3053 ,  H01J2237/0812 ,  H01J2237/20207

摘要： Irradiation time of a surface position of an object to be processed by a gas cluster ion beam is controlled, and creation and polishing of a desired surface profile of the object to be processed is achieved by controlled irradiation of the gas cluster ion beam.

摘要翻译： 控制由气体簇离子束处理的物体的表面位置的照射时间，通过气体簇离子束的受控照射来实现待处理物体的期望表面轮廓的产生和研磨。

公开(公告)号：US06750393B2

公开(公告)日：2004-06-15

申请号：US10177040

申请日：2002-06-21

申请人： Kazumi Wada ,  Lionel C. Kimerling ,  Noriaki Toyoda

发明人： Kazumi Wada ,  Lionel C. Kimerling ,  Noriaki Toyoda

IPC分类号： H01L31052

CPC分类号： B82Y20/00 ,  G02B6/1225 ,  H01L31/02363 ,  H01L31/0547 ,  H01L31/056 ,  Y02E10/52

摘要： A solar cell that has a photoactive region; a Lambertian surface on the topside of the photoactive region; and a photonic crystal on the backside of the photoactive region.

摘要翻译： 具有光活性区域的太阳能电池; 在光活性区域的上侧的朗伯表面; 和光活性区的背面的光子晶体。