公开(公告)号：US08168946B2

公开(公告)日：2012-05-01

申请号：US12816512

申请日：2010-06-16

申请人： Masaki Narushima ,  Koichi Mori ,  Isao Yamada ,  Noriaki Toyoda

发明人： Masaki Narushima ,  Koichi Mori ,  Isao Yamada ,  Noriaki Toyoda

IPC分类号： H01J49/28 ,  H01J3/26

CPC分类号： H01J49/282

摘要： A charged particle separation apparatus that separates ionized gas clusters is disclosed. The charged particle separation apparatus includes an electric field applying part including two electrodes across which electric voltage is applied in order to generate electric field between the two electrodes thereby deflecting a trajectory of the ionized gas cluster, the electrodes including one of an opening and a void; and a plate opening that allows the ionized gas cluster whose trajectory is deflected by the electric field applying part to go therethrough.

摘要翻译： 公开了一种分离离子化气体簇的带电粒子分离装置。 带电粒子分离装置包括电场施加部分，其包括施加电压的两个电极，以便在两个电极之间产生电场，从而偏转电离气体簇的轨迹，电极包括开口和空隙之一 ; 以及允许由电场施加部件偏转轨迹的离子化气体团簇通过的板状开口。

公开(公告)号：US20100320380A1

公开(公告)日：2010-12-23

申请号：US12816512

申请日：2010-06-16

申请人： Masaki Narushima ,  Koichi Mori ,  Isao Yamada ,  Noriaki Toyoda

发明人： Masaki Narushima ,  Koichi Mori ,  Isao Yamada ,  Noriaki Toyoda

IPC分类号： B01D59/44

CPC分类号： H01J49/282

摘要： A charged particle separation apparatus that separates ionized gas clusters is disclosed. The charged particle separation apparatus includes an electric field applying part including two electrodes across which electric voltage is applied in order to generate electric field between the two electrodes thereby deflecting a trajectory of the ionized gas cluster, the electrodes including one of an opening and a void; and a plate opening that allows the ionized gas cluster whose trajectory is deflected by the electric field applying part to go therethrough.

摘要翻译： 公开了一种分离离子化气体簇的带电粒子分离装置。 带电粒子分离装置包括电场施加部分，其包括施加电压的两个电极，以便在两个电极之间产生电场，从而偏转电离气体簇的轨迹，电极包括开口和空隙之一 ; 以及允许由电场施加部件偏转轨迹的离子化气体团簇通过的板状开口。

公开(公告)号：US20120125889A1

公开(公告)日：2012-05-24

申请号：US13113746

申请日：2011-05-23

申请人： Noriaki TOYODA ,  Isao Yamada ,  Masaki Narushima

发明人： Noriaki TOYODA ,  Isao Yamada ,  Masaki Narushima

IPC分类号： B44C1/22 ,  B08B7/00

CPC分类号： H01J37/08 ,  G03F7/427 ,  H01J2237/006 ,  H01J2237/0812 ,  H01J2237/31 ,  H01L21/02041 ,  H01L21/31116

摘要： A cluster beam generating apparatus that generates a cluster beam includes a mixer that mixes a gas source material and a liquid source material; a nozzle that supplies a cluster beam including clusters originating from the gas source material and the liquid source material that are mixed in the mixer; and a temperature adjusting portion that adjusts a temperature of the nozzle, thereby controlling a ratio of the clusters originating from the gas source material and the clusters originating from the liquid source material in the cluster beam.

摘要翻译： 产生聚束束的聚束束发生装置包括混合气体源材料和液体源材料的混合器; 提供包括源自气源材料的簇和混合在混合器中的液体源材料的簇束的喷嘴; 以及温度调节部，其调节喷嘴的温度，从而控制源自气体源材料的簇和源自簇流束中的液体源材料的簇的比例。

公开(公告)号：US20120128892A1

公开(公告)日：2012-05-24

申请号：US13114096

申请日：2011-05-24

申请人： Noriaki TOYODA ,  Isao Yamada ,  Masaki Narushima ,  Masayuki Harashima ,  Eisuke Morisaki

发明人： Noriaki TOYODA ,  Isao Yamada ,  Masaki Narushima ,  Masayuki Harashima ,  Eisuke Morisaki

IPC分类号： C23C16/02 ,  C23C16/34

CPC分类号： H01L21/02024 ,  C30B33/00 ,  H01L29/1608

摘要： A disclosed surface processing method includes a first processing step, wherein a gas cluster beam is generated from a source material that does not contain nitrogen, and irradiated to a member to be processed, and a second processing step, wherein a nitrogen gas cluster beam is generated and irradiated to the member to be processed.

摘要翻译： 所公开的表面处理方法包括：第一处理步骤，其中从不含氮的源材料产生气体束束并照射到待处理的构件;以及第二处理步骤，其中氮气簇束为 产生并照射到待处理的构件。

公开(公告)号：US20130295751A1

公开(公告)日：2013-11-07

申请号：US13978942

申请日：2012-01-13

申请人： Takamasa Kato ,  Masaki Narushima ,  Kenichi Hara

发明人： Takamasa Kato ,  Masaki Narushima ,  Kenichi Hara

IPC分类号： H01L21/02

CPC分类号： H01L21/02617 ,  C23C24/02 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/20 ,  Y02E10/541 ,  Y02E10/543

摘要： This thin film forming method for a solar cell forms a thin film that contains a plurality of elements on the surface of an object to be processed. A raw material solution that contains the elements is dispersed in a processing space and microparticles by an electric field, and the microparticles that are dispersed form a thin film that adheres to the surface of the object to be processed. Thus, a thin film for a solar cell element with preferable crystallinity can be formed even in an atmosphere at atmospheric pressure.

摘要翻译： 该太阳能电池薄膜形成方法形成在被处理物的表面上含有多个元素的薄膜。 含有这些元素的原料溶液通过电场分散在处理空间和微粒中，并且分散的微粒形成粘附到待处理物体的表面的薄膜。 因此，即使在大气压的气氛中也可以形成具有优选结晶性的太阳能电池元件用薄膜。

公开(公告)号：US07198448B2

公开(公告)日：2007-04-03

申请号：US11332653

申请日：2006-01-13

申请人： Jun Ozawa ,  Jun Hirose ,  Masaki Narushima

发明人： Jun Ozawa ,  Jun Hirose ,  Masaki Narushima

IPC分类号： B65G49/07

CPC分类号： H01L21/67161 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67745 ,  Y10S414/139

摘要： A vacuum process system comprises: a load port on which an object to be processed is set; a common transfer chamber disposed adjacent to the load port, having an internal space set at an atmospheric pressure level, and including a first transfer device that is movable and transfers the object into/from the load port, the first transfer device being disposed within the internal space; and a process unit having one process chamber for subjecting the object to a predetermined process, and a vacuum transfer chamber connected to the process chamber, having an internal space set at a vacuum pressure level, and including a second transfer device for transferring the object into/from the process chamber, the second transfer device being disposed within the internal space. The process units are individually connected to the common transfer chamber such that the process units are substantially parallel to each other. The vacuum chamber of each process unit is connected to the common transfer chamber. Each process unit extends linearly in a direction substantially perpendicular to the common transfer chamber. The object is transferred into/from the vacuum transfer chamber by means of the first transfer device.

摘要翻译： 真空处理系统包括：设置待处理对象的装载端口; 与负载端口相邻设置的公共传送室，具有设定在大气压力水平的内部空间，并且包括第一传送装置，该第一传送装置可移动并将物体传送到/从所述装载端口传送，所述第一传送装置设置在所述传送室内 内部空间; 以及处理单元，其具有用于使物体经受预定处理的一个处理室和连接到处理室的真空传送室，其具有设置在真空压力水平的内部空间，并且包括用于将物体传送到 /从处理室，第二传送装置设置在内部空间内。 处理单元分别连接到公共传送室，使得处理单元基本上彼此平行。 每个处理单元的真空室连接到公共传送室。 每个处理单元在基本上垂直于公共传送室的方向上线性地延伸。 物体通过第一传送装置传送到/从真空传送室传送。

公开(公告)号：US20060084266A1

公开(公告)日：2006-04-20

申请号：US11252795

申请日：2005-10-19

申请人： Masaki Narushima ,  Koumei Matsuzawa ,  Hiroshi Sato ,  Takayuki Komiya ,  Eiichi Kondoh

发明人： Masaki Narushima ,  Koumei Matsuzawa ,  Hiroshi Sato ,  Takayuki Komiya ,  Eiichi Kondoh

IPC分类号： H01L21/44

CPC分类号： H01L21/76877 ,  C23C18/161 ,  C23C18/1678 ,  C23C18/168 ,  C23C18/1682 ,  C23C18/1685 ,  C23C18/40 ,  H01L21/28556 ,  H01L21/288

摘要： A film formation method of forming a film on a fine-pattern by supplying a processing medium that is in the supercritical state in which a precursor is dissolved on a target substrate is disclosed. The film formation method includes a first process of supplying the processing medium on the target substrate, the temperature of which is set at a first temperature that is lower than a film formation minimum temperature that is the lowest temperature at which film formation takes place, and a second process of forming the film on the target substrate by raising the temperature of the target substrate from the first temperature to a second temperature that is higher than the film formation minimum temperature.

摘要翻译： 公开了一种通过在目标基板上提供处于前体被溶解的超临界状态的处理介质，在微细图案上形成薄膜的成膜方法。 成膜方法包括：将目标基板上的处理介质供给到第一温度的第一工序，该第一工序的温度设定在低于成膜的最低温度的成膜最低温度的第一温度，以及 通过将目标基板的温度从第一温度升高到高于成膜最低温度的第二温度，在目标基板上形成膜的第二工序。

公开(公告)号：US4941800A

公开(公告)日：1990-07-17

申请号：US260608

申请日：1988-10-21

申请人： Hisashi Koike ,  Itaru Takao ,  Masaki Narushima ,  Kiyoshi Takekoshi

发明人： Hisashi Koike ,  Itaru Takao ,  Masaki Narushima ,  Kiyoshi Takekoshi

IPC分类号： H01L21/677 ,  H01L21/683

CPC分类号： H01L21/67778 ,  H01L21/6838

摘要： A transfer apparatus for carrying a semiconductor wafer into a wafer cassette comprising an arm to load a semiconductor wafer thereon, a moving mechanism to move the arm to a wafer cassette, a chucking device to have a wafer attracted to the arm, and an auxiliary mechanism to push a wafer and adjust the position of the wafer to the inlet of a wafer cassette when the wafer comes into contact with the side wall of the wafer cassette.

摘要翻译： 一种用于将半导体晶片携带到晶片盒中的转印装置，该晶片盒包括用于在其上装载半导体晶片的臂，用于将臂移动到晶片盒的移动机构，具有吸引到臂的晶片的夹持装置和辅助机构 当晶片与晶片盒的侧壁接触时，推动晶片并将晶片的位置调整到晶片盒的入口。

公开(公告)号：US20100099254A1

公开(公告)日：2010-04-22

申请号：US12443983

申请日：2007-10-01

申请人： Masaki Narushima ,  Yasuhiko Kojima

发明人： Masaki Narushima ,  Yasuhiko Kojima

IPC分类号： H01L21/768 ,  H01L21/00

CPC分类号： H01L21/76843 ,  C23C16/44 ,  H01L21/67207 ,  H01L21/68742 ,  H01L21/76831 ,  H01L21/76861 ,  H01L21/76864 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00

摘要： A semiconductor manufacturing apparatus, when a barrier film and a copper film are formed along a recess in an insulating film by using an alloy layer of copper and addictive metal, e.g., Mn, and copper wiring is embedded therein, reduces Mn in the copper film to suppress an increase in wiring resistance. A vacuum transfer module is connected, through a load lock chamber, to a loader module for transferring a wafer with respect to a carrier. A formic acid treatment module supplying formic acid vapor as an organic acid to the wafer and a module forming a film of Cu, e.g., by CVD are connected to the vacuum transfer module to configure an apparatus manufacturing a semiconductor. The wafer W subjected to alloy layer formation and then, e.g., to annealing is transferred into the apparatus, and treatment with formic acid is performed followed by Cu film formation.

摘要翻译： 半导体制造装置，通过使用例如Mn的铜和上釉金属的合金层，在绝缘膜中的凹部形成阻挡膜和铜膜，并且嵌入铜布线，从而减少铜膜中的Mn 以抑制布线电阻的增加。 真空传递模块通过负载锁定室连接到用于相对于载体传送晶片的加载器模块。 向晶片供给作为有机酸的甲酸蒸气的甲酸处理组件和例如通过CVD形成Cu膜的模块连接到真空转印模块以构造制造半导体的装置。 进行合金层形成然后例如退火的晶片W被转移到装置中，然后用甲酸处理，然后进行Cu膜形成。

公开(公告)号：US06951587B1

公开(公告)日：2005-10-04

申请号：US09722485

申请日：2000-11-28

申请人： Masaki Narushima

发明人： Masaki Narushima

IPC分类号： H01L21/302 ,  C23C16/00 ,  C23C16/458 ,  C23F1/00 ,  H01L21/00 ,  H01L21/205 ,  H01L21/306 ,  H01L21/3065 ,  H05B3/20

CPC分类号： H01L21/67109 ,  C23C16/4586

摘要： A ceramic heater system has a ceramic heater base having a substrate-mounting surface formed on the top surface thereof and a heater, buried in the heater base, for heating a substrate. A fluid passage is formed buried in the heater base below where the heater is buried. The heater base is cooled as a fluid whose temperature is lower than the temperature of the heater base is let flow in the fluid passage. A substrate processing apparatus has the ceramic heater system installed in a process chamber whose vacuum state can be maintained, a gas supply mechanism for feeding a gas into the process chamber, and a power supply. The substrate processing apparatus performs a heat treatment, etching and film deposition on a substrate placed in the process chamber.

摘要翻译： 陶瓷加热器系统具有陶瓷加热器基座，其具有形成在其顶表面上的基板安装表面和埋在加热器基座中用于加热基板的加热器。 在加热器底部埋入加热器底部的流体通道形成在加热器的下面。 加热器基座被冷却为温度低于加热器基座的温度的流体，流体流过流体通道。 基板处理装置具有陶瓷加热器系统，其安装在可以保持真空状态的处理室中，用于将气体供给到处理室中的气体供给机构和电源。 基板处理装置在放置在处理室中的基板上进行热处理，蚀刻和膜沉积。