Vacuum processing apparatus and method of using the same
    1.
    发明申请
    Vacuum processing apparatus and method of using the same 审中-公开
    真空处理装置及其使用方法

    公开(公告)号:US20060174835A1

    公开(公告)日:2006-08-10

    申请号:US11346301

    申请日:2006-02-03

    IPC分类号: C23C16/00

    CPC分类号: C23C16/4401 H01L21/67069

    摘要: A vacuum processing system includes a process chamber configured to accommodate a target object and perform a process thereon under a vacuum environment. The process chamber is provided with an exhaust system and a gas supply system. An ion generator configured to generate minus ions is disposed in a space outside the process chamber. The space is arranged to selectively communicate with the interior of the process chamber. A negative charge applicator is configured to form a negatively charged state of the target object within the process chamber.

    摘要翻译: 真空处理系统包括被配置为容纳目标物体并在真空环境下对其进行处理的处理室。 处理室设有排气系统和气体供应系统。 配置成产生负离子的离子发生器设置在处理室外部的空间中。 该空间被布置成选择性地与处理室的内部连通。 负电荷施加器被配置为在处理室内形成目标物体的带负电荷的状态。

    DEPOSITION HEAD AND FILM FORMING APPARATUS
    2.
    发明申请
    DEPOSITION HEAD AND FILM FORMING APPARATUS 审中-公开
    沉积头和成膜装置

    公开(公告)号:US20120031339A1

    公开(公告)日:2012-02-09

    申请号:US13262335

    申请日:2010-04-02

    IPC分类号: C23C16/455

    摘要: There is provided a deposition head capable of discharging a material gas having a uniform flow rate and equi-thermal property from each component in a large-sized substrate as well as a conventional small-sized one for forming a uniform thin film. A deposition apparatus including the deposition head is also provided. The deposition head is provided within a deposition apparatus for forming a thin film on a substrate and configured to discharge a material gas toward the substrate. The deposition head includes an outer casing, and an inner casing provided within the outer casing and into which the material gas is introduced. In the inner casing, an opening configured to discharge the material gas toward the substrate is formed, and a heater configured to heat the material gas is provided at an outer surface of the outer casing or in a space between the outer casing and the inner casing.

    摘要翻译: 提供一种沉积头,其能够在大尺寸基板中排出具有均匀流速和等热特性的材料气体,以及用于形成均匀薄膜的常规小尺寸基板。 还提供了包括沉积头的沉积设备。 沉积头设置在用于在衬底上形成薄膜并用于将材料气体朝向衬底排出的沉积设备中。 沉积头包括外壳和设置在外壳内并且材料气体被引入的内壳。 在内壳体中,形成有将材料气体朝向基板排出的开口,在外壳的外表面或外壳与内壳之间的空间内设置加热材料气体的加热器 。

    Electric wire and cable with coating/covering of polyvinyl chloride family resin composition
    3.
    发明授权
    Electric wire and cable with coating/covering of polyvinyl chloride family resin composition 失效
    电线电缆与涂料/覆盖层的聚氯乙烯树脂组成

    公开(公告)号:US07420118B2

    公开(公告)日:2008-09-02

    申请号:US11113065

    申请日:2005-04-25

    IPC分类号: H01B11/06

    CPC分类号: H01B3/443 C08K5/098 C08L27/06

    摘要: An electric wire with coating of polyvinyl chloride family resin composition is disclosed which has a coating layer containing a polyvinyl chloride family resin composition comprising polyvinyl chloride family resin and one or more compounds selected from calcium soap, zinc soap and hydrotalcite. The polyvinyl chloride composition does not comprise either or both of a lead compound and a β-diketone compound having a melting point less than 100° C. A plasticizer can be further added to the composition so as to obtain a heat-stable vinyl chloride composition. A cable covered with the polyvinyl chloride family resin composition is also disclosed, including a cable having electric wires coated with the polyvinyl chloride family resin composition.

    摘要翻译: 公开了一种具有聚氯乙烯家族树脂组合物涂层的电线,其具有包含聚氯乙烯家族树脂组合物的涂层,其包含聚氯乙烯家族树脂和一种或多种选自钙皂,锌皂和水滑石的化合物。 聚氯乙烯组合物不包含铅化合物和熔点低于100℃的β-二酮化合物中的任一种或两者。还可以向组合物中加入增塑剂以获得热稳定性氯乙烯组合物 。 还公开了用聚氯乙烯族树脂组合物覆盖的电缆,包括具有涂覆有聚氯乙烯树脂组合物的电线的电缆。

    Method and apparatus for treating article to be treated
    4.
    发明授权
    Method and apparatus for treating article to be treated 失效
    用于治疗待治疗物品的方法和装置

    公开(公告)号:US07208428B2

    公开(公告)日:2007-04-24

    申请号:US10433423

    申请日:2001-12-04

    IPC分类号: H01L21/324 H01L21/477

    摘要: A thermal treatment apparatus 1 includes a reaction tube 2 for containing wafers 10 contaminated with organic substances having a heater 12 capable of heating the reaction tube; a first gas supply pipe 13 for carrying oxygen gas into the reaction tube 2; and a second gas supply pipe 14 for carrying hydrogen gas into the reaction tube 2. Oxygen gas and hydrogen gas are supplied through the first gas supply pipe 13 and the second gas supply pipe 14, respectively, into the reaction tube 2, and the heater 12 heats the reaction tube 2 at a temperature capable of activating oxygen gas and hydrogen gas. A combustion reaction occurs in the reaction tube 2 and thereby the organic substances adhering to the wafers 10 are oxidized, decomposed and removed.

    摘要翻译: 热处理装置1包括反应管2,用于容纳被有机物质污染的晶片10,该有机物质具有加热反应管的加热器12; 用于将氧气输送到反应管2中的第一气体供给管13; 以及用于将氢气输送到反应管2中的第二气体供给管14。 氧气和氢气分别通过第一气体供给管13和第二气体供给管14供给到反应管2中,加热器12在能够活化氧气和氢气的温度下加热反应管2 。 在反应管2中发生燃烧反应,因此附着在晶片10上的有机物被氧化,分解除去。

    Method for analyzing quartz member
    5.
    发明授权
    Method for analyzing quartz member 失效
    石英片分析方法

    公开(公告)号:US08268185B2

    公开(公告)日:2012-09-18

    申请号:US12097767

    申请日:2007-05-28

    IPC分类号: G01N1/32 G01N1/28

    摘要: A method of analyzing a quartz member includes the step of supplying an etchant to the quartz member so as to etch the quartz member. The method also includes analyzing the etchant used in the supplying step. The etchant is supplied to a concave etchant receiving portion that is formed in the quartz member prior to the supplying step and has an inner wall thereof formed of the quartz member.

    摘要翻译: 分析石英构件的方法包括向石英构件供应蚀刻剂以蚀刻石英构件的步骤。 该方法还包括分析在供应步骤中使用的蚀刻剂。 蚀刻剂被供给到在供给步骤之前形成在石英构件中并具有由石英构件形成的内壁的凹蚀刻剂接收部分。

    VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD
    6.
    发明申请
    VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD 审中-公开
    蒸气沉积装置和蒸气沉积方法

    公开(公告)号:US20120094014A1

    公开(公告)日:2012-04-19

    申请号:US13265678

    申请日:2010-04-21

    IPC分类号: B05D5/06 B67D7/06 C23C16/448

    摘要: There is provided a vapor deposition apparatus and a vapor deposition method capable of efficiently sublimating/melting a granular organic material with high mobility. The vapor deposition apparatus for forming a thin film on a substrate by vapor deposition includes a depressurizable material supply apparatus configured to supply a material gas, and a film forming apparatus configured to form a thin film on the substrate. The material supply apparatus includes a quantity control unit configured to control a quantity of a material, and a material gas generating unit configured to vaporize the material supplied from the quantity control unit.

    摘要翻译: 提供了能够高度迁移率地有效地升华/熔化颗粒状有机材料的气相沉积设备和气相沉积方法。 用于通过气相沉积在基板上形成薄膜的气相沉积装置包括构造成供给材料气体的可降压材料供给装置和被配置为在基板上形成薄膜的成膜装置。 材料供给装置包括:配置为控制材料量的量控制单元和构造成使从量控制单元供给的材料蒸发的原料气体生成单元。

    Vacuum processing apparatus and method
    9.
    发明授权
    Vacuum processing apparatus and method 失效
    真空处理装置及方法

    公开(公告)号:US07993458B2

    公开(公告)日:2011-08-09

    申请号:US12169660

    申请日:2008-07-09

    IPC分类号: C23C16/00 H01L21/306 C23F1/00

    摘要: A gas exhaust unit evacuates the inside of a vacuum transfer chamber at a constant exhaust rate. An gas exhaust valve is kept normally open, and a purge gas (N2 gas) is supplied from a purge gas supply source into the vacuum transfer chamber via a mass flow controller (MFC) and an opening/closing valve. A main control unit controls a pressure in the vacuum transfer chamber to be within a specified range through a flow rate set value for the MFC while monitoring a pressure in the vacuum transfer chamber via a vacuum gauge. The main control unit determines occurrence of abnormality when the pressure exceeds a specified upper limit and then takes such actions as changing a flow rate set value for the MFC, giving an alarm and stopping the operation of a vacuum processing apparatus.

    摘要翻译: 排气单元以恒定的排气速率排出真空传送室的内部。 气体排气阀保持常开,通过质量流量控制器(MFC)和打开/关闭阀将净化气体(N 2气)从净化气体供应源供应到真空传送室。 主控制单元通过真空传送室中的压力通过真空计监视真空传送室中的压力,将真空传送室中的压力通过MFC的流量设定值控制在规定范围内。 主控制单元在压力超过规定的上限的情况下,判定异常的发生,然后采取改变MFC的流量设定值,报警并停止真空处理装置的动作等动作。

    Apparatus and method for measuring the concentration of organic gas
    10.
    发明授权
    Apparatus and method for measuring the concentration of organic gas 有权
    用于测量有机气体浓度的装置和方法

    公开(公告)号:US07946152B2

    公开(公告)日:2011-05-24

    申请号:US11916842

    申请日:2006-06-02

    IPC分类号: G01N33/00 G01N7/00

    摘要: In a measuring apparatus, an atmosphere to be inspected taken out from a space to be inspected in a processing system is analyzed for organic gas concentration. The apparatus is provided with a collector having an approach connected to the space to be inspected. The collector is connected to a gas exhaust system and an adsorption material for preparing a captured organic gas is held in the collector. A temperature control mechanism including a heater controls the adsorption/desorption of organic gas through temperature control of the adsorption material. A carrier gas is supplied from a carrier gas supplying system in order to transfer the desorbed gas taken from the captured organic gas and the concentration of organic gas in the carrier gas transferring the desorbed gas is determined in a concentration measuring unit.

    摘要翻译: 在测量装置中,分析在处理系统中从要检查的空间中取出的待检查气氛中的有机气体浓度。 该设备设置有具有连接到待检查空间的方法的收集器。 收集器连接到排气系统,并且用于制备捕获的有机气体的吸附材料保持在收集器中。 包括加热器的温度控制机构通过吸附材料的温度控制来控制有机气体的吸附/解吸。 从载气供给系统供给载气,以便从被捕获的有机气体中取出的解吸气体转移,并且在浓度测定单元中确定转移脱附气体的载气中的有机气体的浓度。