公开(公告)号：US09362090B2

公开(公告)日：2016-06-07

申请号：US12973563

申请日：2010-12-20

申请人： Masanobu Honda ,  Yutaka Matsui ,  Manabu Sato

发明人： Masanobu Honda ,  Yutaka Matsui ,  Manabu Sato

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J7/24 ,  H05B31/26 ,  H01J37/32 ,  H01L21/311 ,  H01L21/02 ,  H01L21/67

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3255 ,  H01J37/32706 ,  H01J37/32862 ,  H01J37/32926 ,  H01L21/02532 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

摘要： A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.

摘要翻译： 一种使聚合物能够从电绝缘电极移除的等离子体处理装置。 等离子体处理装置的基座设置在其中具有处理空间的基板处理室中。 射频电源连接到基座。 上电极板与基板处理室的壁和基座电绝缘。 直流电源连接到上电极板。 等离子体处理装置的控制器根据要执行的RIE处理的处理条件确定施加到上电极板的负DC电压的值。

公开(公告)号：US07883632B2

公开(公告)日：2011-02-08

申请号：US11689065

申请日：2007-03-21

申请人： Masanobu Honda ,  Yutaka Matsui ,  Manabu Sato

发明人： Masanobu Honda ,  Yutaka Matsui ,  Manabu Sato

IPC分类号： G06F19/00 ,  C23C14/32 ,  C23C14/00

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3255 ,  H01J37/32706 ,  H01J37/32862 ,  H01J37/32926 ,  H01L21/02532 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

摘要： A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.

摘要翻译： 一种使聚合物能够从电绝缘电极移除的等离子体处理装置。 等离子体处理装置的基座设置在其中具有处理空间的基板处理室中。 射频电源连接到基座。 上电极板与基板处理室的壁和基座电绝缘。 直流电源连接到上电极板。 等离子体处理装置的控制器根据要执行的RIE处理的处理条件确定施加到上电极板的负DC电压的值。

公开(公告)号：US20110088850A1

公开(公告)日：2011-04-21

申请号：US12973563

申请日：2010-12-20

申请人： Masanobu HONDA ,  Yutaka Matsui ,  Manabu Sato

发明人： Masanobu HONDA ,  Yutaka Matsui ,  Manabu Sato

IPC分类号： H01L21/3065

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3255 ,  H01J37/32706 ,  H01J37/32862 ,  H01J37/32926 ,  H01L21/02532 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

摘要： A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.

摘要翻译： 一种使聚合物能够从电绝缘电极移除的等离子体处理装置。 等离子体处理装置的基座设置在其中具有处理空间的基板处理室中。 射频电源连接到基座。 上电极板与基板处理室的壁和基座电绝缘。 直流电源连接到上电极板。 等离子体处理装置的控制器根据要执行的RIE处理的处理条件确定施加到上电极板的负DC电压的值。

公开(公告)号：US20070221493A1

公开(公告)日：2007-09-27

申请号：US11689065

申请日：2007-03-21

申请人： Masanobu HONDA ,  Yutaka Matsui ,  Manabu Sato

发明人： Masanobu HONDA ,  Yutaka Matsui ,  Manabu Sato

IPC分类号： G06F19/00 ,  C23C14/32 ,  C23C14/00

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3255 ,  H01J37/32706 ,  H01J37/32862 ,  H01J37/32926 ,  H01L21/02532 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

摘要： A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.

摘要翻译： 一种使聚合物能够从电绝缘电极移除的等离子体处理装置。 等离子体处理装置的基座设置在其中具有处理空间的基板处理室中。 射频电源连接到基座。 上电极板与基板处理室的壁和基座电绝缘。 直流电源连接到上电极板。 等离子体处理装置的控制器根据要执行的RIE处理的处理条件确定施加到上电极板的负DC电压的值。

公开(公告)号：US20070068798A1

公开(公告)日：2007-03-29

申请号：US11529372

申请日：2006-09-29

申请人： Masanobu Honda ,  Toshihiro Hayami ,  Yutaka Matsui

发明人： Masanobu Honda ,  Toshihiro Hayami ,  Yutaka Matsui

IPC分类号： C25D17/00 ,  F02M37/22

CPC分类号： H01J37/32431 ,  F02M27/042 ,  H01J37/32568

摘要： A structure for a plasma processing chamber which makes it possible to control the potential therein and simplify the construction of the plasma processing chamber. A gas-introducing showerhead 34 is disposed in the plasma processing chamber 10 including a container 11 having a process space S for receiving a semiconductor wafer W, and a susceptor 12 disposed in the container 11, for mounting the received semiconductor wafer W thereon. The susceptor 12 is connected to high-frequency power supplies 20 and 46. An electrode support 39 of the gas-introducing showerhead 34 is electrically grounded. An electrically floating top electrode plate 38 of the gas-introducing showerhead 34 is disposed between the electrode support 39 and the process space S. The top electrode plate 38 has a surface exposed to the process space S. An insulating film 48 is formed of a dielectric material and disposed between the electrode support 39 and the top electrode plate 38.

摘要翻译： 一种用于等离子体处理室的结构，其可以控制其中的电位并简化等离子体处理室的结构。 气体导入花洒34设置在等离子体处理室10中，包括具有用于接收半导体晶片W的处理空间S的容器11和设置在容器11中的用于将接收的半导体晶片W安装在其上的基座12。 基座12连接到高频电源20和46.气体导入花洒34的电极支架39电接地。 气体导入喷头34的电浮置顶部电极板38设置在电极支撑件39和处理空间S之间。顶部电极板38具有暴露于处理空间S的表面。绝缘膜48由 电介质材料并且设置在电极支撑件39和顶部电极板38之间。

公开(公告)号：US20060196847A1

公开(公告)日：2006-09-07

申请号：US11365676

申请日：2006-03-02

申请人： Masanobu Honda ,  Tetsuji Sato ,  Shin Matsuura ,  Yutaka Matsui

发明人： Masanobu Honda ,  Tetsuji Sato ,  Shin Matsuura ,  Yutaka Matsui

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/31116 ,  C23F4/00 ,  H01J37/32972 ,  H01L21/02063

摘要： A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an O2 gas, and ashing the resist film by using a processing gas containing at least an O2 gas. Relevant places in the processing chamber from which the deposits are removed are heated in the step of removing the deposits.

摘要翻译： 等离子体处理方法包括以下步骤：通过使用图案化的抗蚀剂膜作为掩模，利用基于CF的处理气体来蚀刻目标物体，通过使用包含以下步骤的处理气体来除去在蚀刻目标物体的步骤期间积聚在处理室内的沉积物 至少一种O 2气体，并且通过使用至少含有O 2气体的处理气体使抗蚀剂膜灰化。 在去除沉积物的步骤中加热处理室中除去沉积物的相关位置。

公开(公告)号：US20070186952A1

公开(公告)日：2007-08-16

申请号：US11671223

申请日：2007-02-05

申请人： Masanobu HONDA ,  Yutaka Matsui

发明人： Masanobu HONDA ,  Yutaka Matsui

IPC分类号： B08B6/00 ,  G06F19/00 ,  C23F1/00 ,  C23C16/00

CPC分类号： B08B7/0035 ,  H01J37/32862 ,  Y10S438/905

摘要： A method of cleaning a substrate processing chamber that enables formation of an oxide film on a surface of a processing chamber inside component to be prevented. A substrate processing chamber 11 has therein a processing space S into which a wafer W is transferred and carries out reactive ion etching on the wafer W in the processing space S. The substrate processing chamber 11 has an upper electrode plate 38 that comprises silicon and a lower surface of which is exposed to the processing space S. A dry cleaning is carried out on the upper electrode plate 38 using oxygen radicals produced from oxygen gas introduced into the processing space S. An oxide removal processing is carried out on the upper electrode plate 38 using fluorine ions and fluorine radicals produced from carbon tetrafluoride gas introduced into the processing space S.

摘要翻译： 一种能够防止在处理室内部组件的表面上形成氧化膜的基板处理室的清洗方法。 衬底处理室11中具有转移晶片W的处理空间S，并且在处理空间S中对晶片W进行反应离子蚀刻。衬底处理室11具有上电极板38，上电极板38包括硅和 其下表面暴露于处理空间S.使用从引入到处理空间S中的氧气产生的氧自由基，在上电极板38上进行干洗。在上电极板上进行氧化物去除处理 38使用从引入到处理空间S中的四氟化碳气体产生的氟离子和氟自由基。

公开(公告)号：US08173036B2

公开(公告)日：2012-05-08

申请号：US11365676

申请日：2006-03-02

申请人： Masanobu Honda ,  Tetsuji Sato ,  Shin Matsuura ,  Yutaka Matsui

发明人： Masanobu Honda ,  Tetsuji Sato ,  Shin Matsuura ,  Yutaka Matsui

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/31116 ,  C23F4/00 ,  H01J37/32972 ,  H01L21/02063

摘要： A plasma processing method includes the steps of etching the target object with a CF-based processing gas by using a patterned resist film as a mask, removing deposits accumulated inside a processing chamber during the step of etching the target object by using a processing gas containing at least an O2 gas, and ashing the resist film by using a processing gas containing at least an O2 gas. Relevant places in the processing chamber from which the deposits are removed are heated in the step of removing the deposits.

摘要翻译： 等离子体处理方法包括以下步骤：通过使用图案化的抗蚀剂膜作为掩模，利用基于CF的处理气体来蚀刻目标物体，通过使用包含以下步骤的处理气体来除去在蚀刻目标物体的步骤期间积聚在处理室内的沉积物 至少一种O 2气体，并且通过使用至少含有O 2气体的处理气体使抗蚀剂膜灰化。 在去除沉积物的步骤中加热处理室中除去沉积物的相关位置。

公开(公告)号：US08057603B2

公开(公告)日：2011-11-15

申请号：US11671223

申请日：2007-02-05

申请人： Masanobu Honda ,  Yutaka Matsui

发明人： Masanobu Honda ,  Yutaka Matsui

IPC分类号： B08B7/00 ,  B08B7/04

CPC分类号： B08B7/0035 ,  H01J37/32862 ,  Y10S438/905

摘要： A method of cleaning a substrate processing chamber that enables formation of an oxide film on a surface of a processing chamber inside component to be prevented. A substrate processing chamber 11 has therein a processing space S into which a wafer W is transferred and carries out reactive ion etching on the wafer W in the processing space S. The substrate processing chamber 11 has an upper electrode plate 38 that comprises silicon and a lower surface of which is exposed to the processing space S. A dry cleaning is carried out on the upper electrode plate 38 using oxygen radicals produced from oxygen gas introduced into the processing space S. An oxide removal processing is carried out on the upper electrode plate 38 using fluorine ions and fluorine radicals produced from carbon tetrafluoride gas introduced into the processing space S.

摘要翻译： 一种能够防止在处理室内部组件的表面上形成氧化膜的基板处理室的清洗方法。 衬底处理室11中具有转移晶片W的处理空间S，并且在处理空间S中对晶片W进行反应离子蚀刻。衬底处理室11具有上电极板38，上电极板38包括硅和 其下表面暴露于处理空间S.使用从引入到处理空间S中的氧气产生的氧自由基，在上电极板38上进行干洗。在上电极板上进行氧化物去除处理 38使用从引入到处理空间S中的四氟化碳气体产生的氟离子和氟自由基。

公开(公告)号：US20070221332A1

公开(公告)日：2007-09-27

申请号：US11686618

申请日：2007-03-15

申请人： Masanobu HONDA ,  Yutaka Matsui

发明人： Masanobu HONDA ,  Yutaka Matsui

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32587

摘要： A plasma processing apparatus which enables an insulating film on a grounding electrode to be removed. A plasma processing apparatus has a substrate processing chamber having therein a processing space in which plasma processing is carried out on a substrate, an RF electrode that applies radio frequency electrical power into the processing space, a DC electrode that applies a DC voltage into the processing space, and a grounding electrode that is exposed to the processing space. The grounding electrode and the RF electrode are adjacent to one another with an insulating portion therebetween, and a distance between the grounding electrode and the RF electrode is set in a range of 0 to 10 mm.

摘要翻译： 能够去除接地电极上的绝缘膜的等离子体处理装置。 等离子体处理装置具有基板处理室，其中具有在基板上进行等离子体处理的处理空间，向处理空间施加射频电力的RF电极，向处理空间施加直流电压的直流电极 空间和暴露于处理空间的接地电极。 接地电极和RF电极彼此相邻，其间具有绝缘部分，并且接地电极和RF电极之间的距离设定在0至10mm的范围内。