公开(公告)号：US07883632B2

公开(公告)日：2011-02-08

申请号：US11689065

申请日：2007-03-21

申请人： Masanobu Honda ,  Yutaka Matsui ,  Manabu Sato

发明人： Masanobu Honda ,  Yutaka Matsui ,  Manabu Sato

IPC分类号： G06F19/00 ,  C23C14/32 ,  C23C14/00

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3255 ,  H01J37/32706 ,  H01J37/32862 ,  H01J37/32926 ,  H01L21/02532 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

摘要： A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.

摘要翻译： 一种使聚合物能够从电绝缘电极移除的等离子体处理装置。 等离子体处理装置的基座设置在其中具有处理空间的基板处理室中。 射频电源连接到基座。 上电极板与基板处理室的壁和基座电绝缘。 直流电源连接到上电极板。 等离子体处理装置的控制器根据要执行的RIE处理的处理条件确定施加到上电极板的负DC电压的值。

公开(公告)号：US20110088850A1

公开(公告)日：2011-04-21

申请号：US12973563

申请日：2010-12-20

申请人： Masanobu HONDA ,  Yutaka Matsui ,  Manabu Sato

发明人： Masanobu HONDA ,  Yutaka Matsui ,  Manabu Sato

IPC分类号： H01L21/3065

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3255 ,  H01J37/32706 ,  H01J37/32862 ,  H01J37/32926 ,  H01L21/02532 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

摘要： A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.

摘要翻译： 一种使聚合物能够从电绝缘电极移除的等离子体处理装置。 等离子体处理装置的基座设置在其中具有处理空间的基板处理室中。 射频电源连接到基座。 上电极板与基板处理室的壁和基座电绝缘。 直流电源连接到上电极板。 等离子体处理装置的控制器根据要执行的RIE处理的处理条件确定施加到上电极板的负DC电压的值。

公开(公告)号：US20070221493A1

公开(公告)日：2007-09-27

申请号：US11689065

申请日：2007-03-21

申请人： Masanobu HONDA ,  Yutaka Matsui ,  Manabu Sato

发明人： Masanobu HONDA ,  Yutaka Matsui ,  Manabu Sato

IPC分类号： G06F19/00 ,  C23C14/32 ,  C23C14/00

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3255 ,  H01J37/32706 ,  H01J37/32862 ,  H01J37/32926 ,  H01L21/02532 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

摘要： A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.

摘要翻译： 一种使聚合物能够从电绝缘电极移除的等离子体处理装置。 等离子体处理装置的基座设置在其中具有处理空间的基板处理室中。 射频电源连接到基座。 上电极板与基板处理室的壁和基座电绝缘。 直流电源连接到上电极板。 等离子体处理装置的控制器根据要执行的RIE处理的处理条件确定施加到上电极板的负DC电压的值。

公开(公告)号：US09362090B2

公开(公告)日：2016-06-07

申请号：US12973563

申请日：2010-12-20

申请人： Masanobu Honda ,  Yutaka Matsui ,  Manabu Sato

发明人： Masanobu Honda ,  Yutaka Matsui ,  Manabu Sato

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J7/24 ,  H05B31/26 ,  H01J37/32 ,  H01L21/311 ,  H01L21/02 ,  H01L21/67

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3255 ,  H01J37/32706 ,  H01J37/32862 ,  H01J37/32926 ,  H01L21/02532 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

摘要： A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.

摘要翻译： 一种使聚合物能够从电绝缘电极移除的等离子体处理装置。 等离子体处理装置的基座设置在其中具有处理空间的基板处理室中。 射频电源连接到基座。 上电极板与基板处理室的壁和基座电绝缘。 直流电源连接到上电极板。 等离子体处理装置的控制器根据要执行的RIE处理的处理条件确定施加到上电极板的负DC电压的值。

公开(公告)号：US08404595B2

公开(公告)日：2013-03-26

申请号：US11860788

申请日：2007-09-25

申请人： Masanobu Honda ,  Manabu Sato ,  Yoshiki Igarashi

发明人： Masanobu Honda ,  Manabu Sato ,  Yoshiki Igarashi

IPC分类号： H01L23/302 ,  H01L21/461 ,  B23P15/00 ,  C03C25/00 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23F3/00 ,  B44C1/22

CPC分类号： H01L21/467 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/31116

摘要： A plasma processing method for processing a target substrate uses a plasma processing apparatus which includes a vacuum evacuable processing vessel for accommodating the target substrate therein, a first electrode disposed in the processing vessel and connected to a first RF power supply for plasma generation and a second electrode disposed to face the first electrode. The method includes exciting a processing gas containing fluorocarbon in the processing vessel to generate a plasma while applying a negative DC voltage having an absolute value ranging from about 100 V to 1500 V or an RF power of a frequency lower than about 4 MHz to the second electrode. The target layer is etched by the plasma, thus forming recesses on the etching target layer based on the pattern of the resist layer.

摘要翻译： 用于处理目标基板的等离子体处理方法使用等离子体处理装置，该等离子体处理装置包括用于容纳目标基板的真空可排除处理容器，设置在处理容器中的第一电极，并连接到用于等离子体产生的第一RF电源， 设置成面对第一电极的电极。 该方法包括在处理容器中激发含有碳氟化合物的处理气体，以产生等离子体，同时施加绝对值范围从约100V至1500V或低于约4MHz的RF功率的负DC电压至第二 电极。 通过等离子体蚀刻目标层，由此基于抗蚀剂层的图案在蚀刻目标层上形成凹部。

公开(公告)号：US20090242516A1

公开(公告)日：2009-10-01

申请号：US12413999

申请日：2009-03-30

申请人： Masanobu Honda ,  Hiroyuki Nakayama ,  Manabu Sato

发明人： Masanobu Honda ,  Hiroyuki Nakayama ,  Manabu Sato

IPC分类号： C23F1/02 ,  H01L21/3065

CPC分类号： H01L21/31116 ,  H01J37/32027 ,  H01J37/32091 ,  H01L21/67069

摘要： A plasma etching method includes disposing a first electrode and a second electrode to face each other; preparing a part in the processing chamber; supporting a substrate; vacuum-evacuating the processing chamber; supplying an etching gas into a processing space between the first electrode and the second electrode; generating a plasma of the etching gas in the processing space by applying a radio wave power to the first electrode or the second electrode; and etching a film to be processed on a surface of the substrate by using the plasma. Further, a DC voltage is applied to the part during the etching process, the part being disposed away from the substrate and being etched by reaction with reactant species in the plasma.

摘要翻译： 等离子体蚀刻方法包括：将第一电极和第二电极相对配置; 在处理室中准备一部分; 支撑底物; 真空抽真空处理室; 向第一电极和第二电极之间的处理空间提供蚀刻气体; 通过向所述第一电极或所述第二电极施加无线电波来在所述处理空间中产生蚀刻气体的等离子体; 并且通过使用等离子体在基板的表面上蚀刻待处理的膜。 此外，在蚀刻工艺期间，将DC电压施加到该部件，该部分被设置为远离衬底并且通过与等离子体中的反应物物质的反应进行蚀刻。

公开(公告)号：US08241514B2

公开(公告)日：2012-08-14

申请号：US12413999

申请日：2009-03-30

申请人： Masanobu Honda ,  Hiroyuki Nakayama ,  Manabu Sato

发明人： Masanobu Honda ,  Hiroyuki Nakayama ,  Manabu Sato

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H01L21/31116 ,  H01J37/32027 ,  H01J37/32091 ,  H01L21/67069

摘要： A plasma etching method includes disposing a first electrode and a second electrode to face each other; preparing a part in the processing chamber; supporting a substrate; vacuum-evacuating the processing chamber; supplying an etching gas into a processing space between the first electrode and the second electrode; generating a plasma of the etching gas in the processing space by applying a radio wave power to the first electrode or the second electrode; and etching a film to be processed on a surface of the substrate by using the plasma. Further, a DC voltage is applied to the part during the etching process, the part being disposed away from the substrate and being etched by reaction with reactant species in the plasma.

摘要翻译： 等离子体蚀刻方法包括：将第一电极和第二电极相对配置; 在处理室中准备一部分; 支撑底物; 真空抽真空处理室; 向第一电极和第二电极之间的处理空间提供蚀刻气体; 通过向所述第一电极或所述第二电极施加无线电波来在所述处理空间中产生蚀刻气体的等离子体; 并且通过使用等离子体在基板的表面上蚀刻待处理的膜。 此外，在蚀刻工艺期间，将DC电压施加到该部件，该部分被设置为远离衬底并且通过与等离子体中的反应物物质的反应进行蚀刻。

公开(公告)号：US08128831B2

公开(公告)日：2012-03-06

申请号：US11617440

申请日：2006-12-28

申请人： Manabu Sato ,  Yoshiki Igarashi ,  Yoshimitsu Kon ,  Masanobu Honda

发明人： Manabu Sato ,  Yoshiki Igarashi ,  Yoshimitsu Kon ,  Masanobu Honda

IPC分类号： H01L21/302

CPC分类号： H01L21/0273 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144

摘要： A plasma processing apparatus includes a first and a second electrode disposed to face each other in a processing chamber, the second electrode supporting a substrate; a first RF power supply for applying a first RF power of a higher frequency to the second electrode; a second RF power supply for applying a second RF power of a lower frequency to the second electrode; and a DC power source for applying a DC voltage to the first electrode. In a plasma etching method for etching a substrate by using the plasma processing apparatus, the first and the second radio frequency power are applied to the second electrode to convert a processing gas containing no CF-based gas into a plasma and a DC voltage is applied to the first electrode, to thereby etch an organic film or an amorphous carbon film on the substrate by using a silicon-containing mask.

摘要翻译： 等离子体处理装置包括在处理室中彼此面对的第一和第二电极，第二电极支撑基板; 用于向第二电极施加较高频率的第一RF功率的第一RF电源; 用于将较低频率的第二RF功率施加到所述第二电极的第二RF电源; 以及用于向第一电极施加DC电压的DC电源。 在通过使用等离子体处理装置蚀刻基板的等离子体蚀刻方法中，将第一和第二射频功率施加到第二电极，以将不含CF基气体的处理气体转换成等离子体，并施加DC电压 从而通过使用含硅掩模在基板上蚀刻有机膜或非晶碳膜。

公开(公告)号：US20070165355A1

公开(公告)日：2007-07-19

申请号：US11617440

申请日：2006-12-28

申请人： Manabu Sato ,  Yoshiki Igarashi ,  Yoshimitsu Kon ,  Masanobu Honda

发明人： Manabu Sato ,  Yoshiki Igarashi ,  Yoshimitsu Kon ,  Masanobu Honda

IPC分类号： H01T23/00

CPC分类号： H01L21/0273 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144

摘要： A plasma processing apparatus includes a first and a second electrode disposed to face each other in a processing chamber, the second electrode supporting a substrate; a first RF power supply for applying a first RF power of a higher frequency to the second electrode; a second RF power supply for applying a second RF power of a lower frequency to the second electrode; and a DC power source for applying a DC voltage to the first electrode. In a plasma etching method for etching a substrate by using the plasma processing apparatus, the first and the second radio frequency power are applied to the second electrode to convert a processing gas containing no CF-based gas into a plasma and a DC voltage is applied to the first electrode, to thereby etch an organic film or an amorphous film on the substrate by using a silicon-containing mask.

摘要翻译： 等离子体处理装置包括在处理室中彼此面对的第一和第二电极，第二电极支撑基板; 用于向第二电极施加较高频率的第一RF功率的第一RF电源; 用于将较低频率的第二RF功率施加到所述第二电极的第二RF电源; 以及用于向第一电极施加DC电压的DC电源。 在通过使用等离子体处理装置蚀刻基板的等离子体蚀刻方法中，将第一和第二射频功率施加到第二电极，以将不含CF基气体的处理气体转换成等离子体，并施加DC电压 从而通过使用含硅掩模在基板上蚀刻有机膜或非晶膜。

公开(公告)号：US08303834B2

公开(公告)日：2012-11-06

申请号：US12411953

申请日：2009-03-26

申请人： Masanobu Honda ,  Kenji Masuzawa ,  Hiroyuki Nakayama ,  Manabu Iwata ,  Manabu Sato ,  Kazuki Narishige

发明人： Masanobu Honda ,  Kenji Masuzawa ,  Hiroyuki Nakayama ,  Manabu Iwata ,  Manabu Sato ,  Kazuki Narishige

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H01J37/32027 ,  H01J37/32091

摘要： A plasma processing apparatus includes an inner upper electrode provided to face a lower electrode mounting thereon a substrate, an outer upper electrode provided in a ring shape at a radially outside of the inner upper electrode and electrically isolated from the inner upper electrode in a vacuum evacuable processing chamber and a processing gas supply unit for supplying a processing gas into a processing space between the inner and the outer upper electrode and the lower electrode. A radio frequency (RF) power supply unit is also provide to apply a RF power to the lower electrode or the inner and the outer upper electrode to generate a plasma of the processing gas by RF discharge. A first and a second DC power supply unit are provided to apply a first and a second variable DC voltage to the inner upper electrode, respectively.

摘要翻译： 一种等离子体处理装置，包括：内部上部电极，其设置在其上安装有基板的下部电极;外部上部电极，其在所述内部上部电极的径向外侧设置成环状，并且在真空抽真空中与所述内部上部电极电隔离 处理室和处理气体供应单元，用于将处理气体供应到内外电极和下电极之间的处理空间中。 射频（RF）电源单元还提供向下电极或内外电极施加RF功率以通过RF放电产生处理气体的等离子体。 提供第一和第二直流电源单元，以分别向内部上部电极施加第一和第二可变直流电压。