公开(公告)号：US5321634A

公开(公告)日：1994-06-14

申请号：US850026

申请日：1992-03-12

申请人： Masanori Obata ,  Jyunichi Arima ,  Yoshihiro Hirata

发明人： Masanori Obata ,  Jyunichi Arima ,  Yoshihiro Hirata

IPC分类号： C23C14/54 ,  G01B21/08 ,  G01G9/00 ,  G01G17/00 ,  G01G23/01 ,  G01G23/48 ,  H01L21/66 ,  G01B7/06 ,  G06F15/20

CPC分类号： G01G9/00 ,  Y10S414/135

摘要： In an automatic thin-film measuring apparatus, the zero point of a precision balance is corrected according to directions from a data processing unit before and after the weight of a semiconductor substrate is measured, the surface temperature of the semiconductor substrate laid on a pan of the precision balance is measured, and the weight of the semiconductor substrate is measured when the surface temperature reaches a predetermined value. Furthermore, the cycle of variations in the zero point is found when the zero point is corrected, and the weight measurement of the semiconductor substrate is conducted during an integer multiple of the change cycle. Therefore, it is possible to enhance the precision of the weight measurement and its reproducibility and to shorten the measurement time without being influenced by low-frequency vibrations.

摘要翻译： 在自动薄膜测量装置中，根据来自数据处理单元的方向，在测量半导体衬底的重量之前和之后校正精度平衡的零点，将半导体衬底的表面温度放置在盘 测量精度平衡，并且当表面温度达到预定值时测量半导体衬底的重量。 此外，当零点被校正时，发现零点变化的周期，并且半导体衬底的重量测量在变化周期的整数倍期间进行。 因此，可以提高重量测量的精度及其重现性，并且缩短测量时间而不受低频振动的影响。

公开(公告)号：US4731516A

公开(公告)日：1988-03-15

申请号：US917124

申请日：1986-10-09

申请人： Takeshi Noguchi ,  Yoshihiro Hirata ,  Junichi Arima ,  Eisuke Tanaka ,  Reiji Tamaki ,  Masanori Obata

发明人： Takeshi Noguchi ,  Yoshihiro Hirata ,  Junichi Arima ,  Eisuke Tanaka ,  Reiji Tamaki ,  Masanori Obata

IPC分类号： B23K26/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/304

CPC分类号： H01L21/268 ,  H01L21/2026 ,  Y10S117/904

摘要： The rough ground rear surface 13b of a semiconductor wafer 11 is mirror-polished by localized irradiation with a focused laser beam 21. The wafer is moved relative to the beam, and the melt puddle formed by the beam thereafter recrystallizes at its trailing edge 24 to leave a mirror smooth rear surface 13c.

摘要翻译： 通过用聚焦激光束21的局部照射将半导体晶片11的粗糙的后表面13b镜面抛光。晶片相对于光束移动，并且由光束形成的熔融熔池随后在其后缘24处重结晶至 留下镜面光滑的后表面13c。

公开(公告)号：US5306947A

公开(公告)日：1994-04-26

申请号：US2398

申请日：1993-01-13

申请人： Hiroshi Adachi ,  Hirozoh Kanegae ,  Hiroshi Mochizuki ,  Masanori Obata ,  Takemi Endoh ,  Kimio Hagi ,  Shigeru Harada ,  Kazuhito Matsukawa ,  Akira Ohhisa ,  Etsushi Adachi

发明人： Hiroshi Adachi ,  Hirozoh Kanegae ,  Hiroshi Mochizuki ,  Masanori Obata ,  Takemi Endoh ,  Kimio Hagi ,  Shigeru Harada ,  Kazuhito Matsukawa ,  Akira Ohhisa ,  Etsushi Adachi

IPC分类号： H01L21/3205 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L29/46 ,  H01L29/54 ,  H01L29/62

CPC分类号： H01L21/02137 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/31055 ,  H01L21/31058 ,  H01L21/3122 ,  H01L21/76819 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002

摘要： The present invention is mainly characterized by providing an even surface of an interlayer insulating film for insulating and isolating an upper interconnection and a lower interconnection from each other. A lower interconnection layer is provided on a semiconductor substrate, having a pattern of stepped portions. A silicon type insulating film is provided on the semiconductor substrate so as to cover the lower interconnection layer. A silicon ladder resin film is filled in recessed portions of the surface of the silicon type insulating film for making even the surface of the silicon type insulating film. An upper interconnection layer electrically connected to the lower interconnection layer through a via hole is provided on the silicon type insulating film. The silicon ladder resin film has the structural formula: ##STR1## where R.sub.1 is at least one of a phenyl group and a lower alkyl group, R.sub.2 is at least one of a hydrogen atom and a lower alkyl group, and n is an integer of 20 to 1000.

摘要翻译： 本发明的主要特征在于，提供用于使上部互连和下部互连彼此绝缘和隔离的层间绝缘膜的均匀表面。 下部布线层设置在半导体基板上，具有台阶部分的图案。 在半导体衬底上设置硅绝缘膜，以覆盖下互连层。 硅梯型树脂膜填充在硅型绝缘膜的表面的凹部中，以使硅型绝缘膜的表面均匀。 通过通孔电连接到下互连层的上互连层设置在硅型绝缘膜上。 硅梯树脂膜具有结构式：（*化学结构*）其中R 1为苯基和低级烷基中的至少一个，R 2为氢原子和低级烷基中的至少一个，n为 整数为20〜1000。

公开(公告)号：US6072876A

公开(公告)日：2000-06-06

申请号：US900978

申请日：1997-07-25

申请人： Masanori Obata ,  Hiroyuki Sugiyama ,  Moribumi Okukawa ,  Tatsuaki Okamoto

发明人： Masanori Obata ,  Hiroyuki Sugiyama ,  Moribumi Okukawa ,  Tatsuaki Okamoto

IPC分类号： H04L9/30

CPC分类号： H04L9/302 ,  H04L9/0822 ,  H04L9/0825

摘要： A scheme for depositing a private key used in the RSA cryptosystem which is capable of maintaining the private key more safely, without requiring a user to always carry around a storage medium. In this scheme, a private key of a user is divided into a first partial private key and a second partial private key at a user's entity, where the first partial private key is set to be maintained at the user's entity, while the second partial private key is deposited from the user's entity to the other entity. Then, the second partial private key is delivered from the other entity to the user's entity in response to a request from the user's entity, and the first partial private key maintained at the user's entity and the second partial private key delivered from the other entity are composed so as to obtain the private key to be used in a processing according to the RSA cryptosystem at the user's entity. This scheme can be generalized to a case of dividing the private key into a plurality of partial private keys.

摘要翻译： 用于存储在RSA密码系统中使用的私钥的方案，其能够更安全地维护私钥，而不需要用户始终携带存储介质。 在该方案中，用户的私钥在用户的实体被划分为第一部分专用密钥和第二部分专用密钥，其中第一部分专用密钥设置为维持在用户的实体，而第二部分专用密钥 密钥从用户实体存储到另一实体。 然后，响应于来自用户实体的请求，第二部分私钥从另一个实体传送到用户的实体，并且保持在用户实体的第一部分私钥和从另一个实体传送的第二部分私钥是 组合以获得在用户实体的根据RSA密码系统的处理中使用的私钥。 该方案可以推广到将私钥划分成多个部分私钥的情况。

公开(公告)号：US4913090A

公开(公告)日：1990-04-03

申请号：US246742

申请日：1988-09-20

申请人： Shigeru Harada ,  Masanori Obata ,  Eisuke Tanaka ,  Kenji Kishibe

发明人： Shigeru Harada ,  Masanori Obata ,  Eisuke Tanaka ,  Kenji Kishibe

IPC分类号： H01L21/205 ,  B01J12/02 ,  C03B19/00 ,  C23C16/455 ,  C23C16/54 ,  H01L21/31

CPC分类号： C23C16/54 ,  C23C16/455

摘要： A single chamber apparatus for chemical vapor deposition of films on semiconductor substrates transported through the chamber. Heaters and a plurality of gas dispersing heads are disposed in the chamber for forming films by chemical vapor deposition. A cooling head is disposed between each adjacent pair of gas dispersing heads for cooling whereby the surface temperature of the substrates opposite the gas dispersing heads is substantially equal to that of the substrates located opposite the cooling heads.

摘要翻译： 用于化学气相沉积半导体衬底上的膜的单室装置，其通过室传送。 加热器和多个气体分散头设置在用于通过化学气相沉积形成膜的室中。 冷却头设置在相邻的一对气体分散头之间用于冷却，由此与气体分散头相对的基板的表面温度基本上等于与冷却头相对的基板的表面温度。